搞好高考数学总复习的几点体会

搞好高考数学总复习的几点体会高一峰（张家口第四中学０７５０００）编者按：这是一篇对高考复习有积极指导意义的好文章，本文主要指出的以下三点值得我们学习和研究．１按高考要求的范围、层次进行复习，不要随意拓广范围，人为提高．２正确选择、使用复习资料，跳出题...     

闪烁计数器阵列定位系统

该闪烁计数器阵列定位系统,即闪烁计数器描迹仪,不但可以确定带电粒子通过的位置,还可以用做触发计数器。在用做触发计数器时,它还具有选择落入该阵列的带电粒子数目的能力。该描迹仪为8×8闪烁计数器阵列,每条闪烁体（ST401型）为40×5×0.6cm³。配用GDB50光电倍增管。阵列面积为40×40cm²。我们自制了快电子学系统和数据读取系统,在与微处理机联试过程中,工作稳定可靠。造价低廉。     

Kerr介质中双原子-压缩真空场系统的腔场谱

研究了含Kerr介质腔中耦合双原子间与双模均处于压缩真空态的光场拉曼相互作用过程的腔场谱.通过求解本征方程导出了双模光场处于任意强度时腔场谱的计算公式,给出了数值计算结果.发现在两模初始场均为弱场时,Kerr介质和原子间的耦合作用对谱结构的影响较小;当双模初始场均为强场时,两模主峰的右侧出现了半梳状边峰,随Kerr效应的增强,峰间距逐渐加宽,并向高频方向扩展,在Kerr效应较强时,两模边峰的峰高出现高低相间的现象.     

Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.     

Rapid Fabrication of Three-Dimensional Woodpile Photonic Crystals by Means of Two-Photon Photopolymerization

Two-photon photopolymerization （TPP） of femtosecond laser is a promising method to fabricate three-dimensional woodpile photonic crystals （PCs）. We build micro-fabricatlon system based on the principle of TPP. Three- dimensional woodpile PCs consisting of in-plane rod distances ranging from 1000nm to 2000nm are fabricated by focusing femtosecond laser in photosensitive liquid resin ORMOCER. The properties of the PCs are also discussed, and fundamental photonic band gaps in middle-infrared range are measured, whose in-plane rod distances are 1500nm and 2000 nm. Three-dimenslonal woodpile PC devices with desired defects, such as cross-waveguide and micro-laser structures, are introduced easily by TPP. We fabricate the three-dimensional woodpile PCs in the liquid resin at the fast scanning speed of 120μm/s.     

筒仓效应观测仪的设计及其应用

设计并制作了观测静态颗粒物质筒仓效应的实验系统,应用该装置研究了筒仓效应的尺寸依赖性.实验结果表明:圆柱形容器中的颗粒物质对于容器底部的饱和压力依赖于容器直径的3次方,而改变填入颗粒的直径时则饱和压力并无明显改变.     

热图法测量激光强度时空分布的重构理论研究

为了把量热法应用于远场激光强度时空分布测量,研究了基于热像仪靶面温度测量反演入射激光强度时空分布的重构理论。针对背光面两种不同边界条件(对流-辐射热流边界和恒定温度边界)推导出了由靶面温度分布反演激光束时空分布的重构表达式。获得的分析表达式对广泛的材料具有适用性。通过引入广义参量F0=α/L2,分别就F0》1和F0《1情况给出了重构近似表达式,并对满足F0》1条件的回推算法进行了数值模拟验证。数值结果表明,两种背光面边界条件下回推得到的激光束时空分布与原始激光束达到了很好的一致,但存在一与靶材傅里叶数相关的最小起始回推时间τ0。成果可用于强激光远场参量测量设备的研制。     

斯塔克效应对两模双光子J-C模型腔场谱的影响

研究了斯塔克(Stark)效应对两模双光子Jaynes-Cummings(J-C)模型腔场谱的影响,推导计算出了腔场处于光子数态时腔场谱的计算公式和数值结果,讨论了斯塔克效应和初始场强对腔场谱的影响。发现斯塔克效应在弱场条件下对腔场谱线的频率和强度都有明显的影响,破坏了谱结构的对称性,使两模的谱线更加丰富。初始场较强时斯塔克效应对谱线的影响较弱。模Ⅰ为真空场、模Ⅱ初始场强递增时,斯塔克效应使模Ⅱ的高频峰受到较强的抑制作用,其低频峰在初始场较弱时受到抑制,初始场较强时又有强化作用,初始场更强时,模Ⅱ的谱线退化为经典的共振荧光谱,与无斯塔克效应的情况基本相同。     

Kinetic model of gas phase polymerization of 1,3-butadiene catalyzed by supported rare earth coordination system

Gas phase polymerization of 1,3-butadiene (Bd) catalyzed by supported rare earth coordination system is studied and a new kinetic model is proposed. Four elementary reactions or processes: the process of exposure and activation of potential active catalytic center, propagation, deactivation and chain transfer reaction to alkyl aluminum, are considered in this model. Some important parameters, such as monomer-consuming rate, are well expressed as the functions of macroscopic polymerization conditions such as pressure, temperature, and duration. The model can simulate the whole polymerization procedure satisfactorily.