钛嫁接介孔分子筛Ti-HMS的合成、表征与催化性能

 以有机金属二氯二茂钛作为Ti源,以HMS作为载体,采用嫁接法合成了一系列不同载Ti量的Ti-HMS.HMS的模板剂通过600 ℃焙烧或乙醇萃取紧随400 ℃焙烧脱除.合成Ti-HMS用热重-差热分析、 X射线粉末衍射、 N2吸附-脱附等温线、漫反射紫外可见光谱和傅里叶变换红外光谱进行了表征,并在温和反应条件下考察了Ti-HMS对过氧化氢液相氧化对叔丁基甲苯的催化性能. 结果表明,对载体采取乙醇萃取和低温焙烧的方法脱除模板剂有利于保护嫁接反应所需要的羟基; 随着载Ti量增加,骨架Ti逐渐减少,四配位的骨架Ti在对叔丁基甲苯氧化反应中具有催化活性; 非骨架Ti导致催化活性降低.在实验条件下,对叔丁基甲苯的转化率可达9.3%, 对叔丁基苯甲醛的选择性为100%.     

一个趣题的实践与证明

题:一个正三棱锥与一个正四棱锥的所有棱长均相等,将它们的一个侧面粘起来,所得几何体可能是什么?如图(一),将正四棱锥S-ABCD的侧面SCD与正三棱锥V-EFG的侧面VEF粘合在一起,为了验证平面SBC与平面GVE是否叠合成一个平面,用硬纸片制作这样的正三棱锥和正四棱锥,实践验证平面SBC与平面GVE,平面SAD与平面GVF恰好分别叠合成一个平面,这样所得的几何体应该是斜三棱柱,问题即为求证二面角B-SC-G=180°.(图一)记所有棱长均为1,探讨如下:(图二)设顶点G、B在平面SCD上的射影分别为M、N,则M为△SCD的中心(如图二)易求得MG=36,SM=…     

含参数不等式的一种解法

含有参数的不等式解法是高中数学教学中的一个难点,也是学生学习的一个难点,其困难之处在于分类讨论标准的化分.许多学生不知怎样化分,化分也不准确 ,不全面.本文结合教学实际介绍一种方法--找参数分界点确定分类标准解含有参数的不等式,以期对学生的学习有所帮助.     

TiO2颗粒表面无机包覆的研究进展

从表面处理的作用、过程、方法、种类、机理、影响因素等方面综述了二氧化钛颗粒无机包覆的研究进展,着重阐述了二氧化钛包硅、包铝的原理及工艺条件。     

Significant improvement of OLED efficiency and stability by doping both HTL and ETL with different dopant in heterojunction of polymer/small-molecules

This paper reports that the polymer/organic heterojunction doped light-emitting diodes using a novel poly-TPD as hole transport material and doping both hole transport layer and emitter layer with the highly fluorescent rubrene and DCJTB has been successfully fabricated. The basic structure of the heterostructure is PTPD/Alq₃. When hole transport layer and electron transport layer are doped simultaneously with different dopant, the electroluminescence quantum efficiencies are about 3 times greater than that of the undoped device. Compared with undoped device and conventional TPD/Alq₃ diode, the stability of the doping device is significantly improved. The process of emission for doped device may include carrier trapping as well as F\"{o}rster energy transfer.     

基于5-氨基乙酰丙酸的SD大鼠结肠组织荧光光谱多变量统计分析方法研究

探讨用多变量统计分析方法对激光诱导的SD大鼠结肠组织5-ALA-PpⅨ荧光光谱进行分类,以诊断结肠早癌。对20只DMH诱导的SD大鼠,12只诱导鼠的第二代鼠,8只正常SD大鼠,按25 mg·kg-1体重剂量尾静脉注射5-ALA,150 min后进行活体激光检测,钛宝石激光器激发波长370 nm。将343条3类组织谱线分为训练组和预测组,经预处理,再采用主成分分析法提取4个主成分变量。利用训练组建立逐步多变量Logistic回归模型,并对预测组预测。3类组织病理类型两两结合,共构建3个回归方程。正常组织与早癌及进展期癌识别的特异性分别为100%, 98.4%,敏感性分别为96%, 100%,准确率分别为98%, 99.2%。在光敏剂5-ALA的辅助作用下,对370 nm激光诱导的结肠组织荧光光谱,采用主成分变量压缩与逐步多变量Logistic回归分析方法相结合,可以获得较高的正常组织对早癌及进展期癌组织识别特异性和敏感性,是一种较有潜力的结肠早癌无损诊断方法。     

A novel structure of a high current gain 4H-SiC BJT with a buried layer in base

In this paper, a new structure of a 4H-SiC bipolar junction transistor (BJT) with a buried layer (BL) in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.     

轧带的润滑力学分析

本文耦合了流体动力润滑理论,经典轧制理论及弹性接触变形理论,并计入了润滑油的压粘效应和轧制材料的硬化效应等因素,运用有限元法和边界元法等计算方法,分别得到了刚性轧辊下的理论解、弹性轧辊下的Boussinesq解及边界元解,预示了轧带工作区的压力、剪应力以及膜厚的分布规律,确定了最小油膜厚度,并对计算结果与实验结果进行了比较。     

马尔可夫链在冗余系统可靠度求解中的应用

求解了单支光纤陀螺失效率取不同值时系统可靠度随时间的变化曲线,并分析了冗余系统可靠度曲线的意义,为光纤陀螺惯性测量冗余系统的可靠性研究提供了重要的信息,并为冗余系统的费效比计算提供了可信的依据。对组成系统的器件进行冗余是提高系统可靠性的一种常用方法,定量研究复杂冗余系统的冗余关系和求解系统的可靠度是极其困难的,马尔可夫模型是一种有效的方法。分析和确定了一个复杂的光纤陀螺惯性测量冗余系统的冗余关系,介绍了马尔可夫模型的基本原理,讨论了冗余系统应用马尔可夫模型的条件,应用马尔可夫模型建立了冗余系统的状态转移图和状态转移矩阵,最后给出了冗余系统可靠度的解析表达式,定量求解了冗余系统的可靠度。     

A novel high performance TFS SJ IGBT with a buried oxide layer

A novel high performance trench field stop(TFS) superjunction(SJ) insulated gate bipolar transistor(IGBT) with a buried oxide(BO) layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT(Conv-SJ), the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop(Vce(on)) and an improved tradeoff between Vce(on)and turn-off loss(Eoff), with no breakdown voltage(BV) degraded. The results show that with the spacing between the gate and the BO layer Wo = 0.2 μm, the thickness of the BO layer Lo = 0.2 μm, the thickness of the drift region Ld = 90 μm, the half width and doping concentration of the N- and P-pillars Wn = Wp = 2.5 μm and Nn = Np = 3 × 1015cm-3, the Vce(on)and Eoffof the proposed structure are 1.08 V and 2.81 mJ/cm2with the collector doping concentration Nc = 1×1018cm-3and 1.12 V and1.73 mJ/cm2with Nc = 5 × 1017cm-3, respectively. However, with the same device parameters, the Vce(on)and Eofffor the Conv-SJ are 1.81 V and 2.88 mJ/cm2with Nc = 1 × 1018cm-3and 1.98 V and 2.82 mJ/cm2with Nc = 5 × 1017cm-3,respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.