乙氧苯柳胺-2-葡萄糖苷酸的分离鉴定

报道了治疗痤疮新药乙氧苯柳胺[N-(4-乙氧苯基）－2－羟基苯甲酰胺]的葡萄糖苷酸结合物的制备方法，选择2只健康家兔，每日口服400mg乙氧苯柳胺，收集0－12h尿样，尿样经冷冻干燥，甲醇提取后，以半制备 型液相色谱对粗提物中乙氧苯柳胺－2－葡萄糖苷酸进行了分离制备，并采用电喷雾离子阱质谱法与1H NMR技术对该化合物进行了结构确证。     

有机质谱在药物代谢研究中的应用

药物代谢是药理学的重要领域之一,研究机体对药物分子结构的改变及其规律.对体内药物及其代谢物的定性与定量分析,是药物代谢研究的基础.     

AIE聚硅氧烷的结构与发光性能研究

聚集诱导发光(AIE)的聚硅氧烷不含传统共轭基团,且其中的硅元素赋予了其优良的光物理性能和优异的生物相容性。近年来,我们制备了一系列含双键、羟基、胺基和环氧基的超支化和线性聚硅氧烷,发现其发光性能随结构的不同而改变,且具有一定的规律性,但对其发光机理缺乏深刻的认识。因此,探究并揭示聚硅氧烷的发光机理及结构与发光性能之间的关系具有很强的挑战性。本文综述了影响超支化聚硅氧烷发光性能的一系列因素,并利用密度泛函理论(DFT)和含时密度泛函理论(TD-DFT)对它的发光机理进行了阐释,提出了"硅桥强化发光"(SiEE)的概念。在此基础上,简述了聚硅氧烷的应用,并指出了其今后的研究方向。     

大尺寸高质量CH3NH3PbCl3钙钛矿单晶的生长机理、相转变与光学性能

在传统逆温差结晶法基础上,通过引入高质量籽晶,采用籽晶诱导逆温差结晶法生长出尺寸为11mm×11mm×2mm的CH₃NH₃PbCl₃钙钛矿单晶.X射线衍射和Rietveld精修结果表明,室温下CH₃NH₃PbCl₃单晶是立方相,其空间群为Pm■m,晶格常数a=0.56877 nm.偏光显微镜研究结果表明,CH₃NH3PbCl₃单晶的生长机理遵循光滑界面的台阶横向长大机制,并沿着台阶的外法线方向长大.变温拉曼光谱研究表明CH₃NH₃PbCl₃单晶在温度160 K发生了正交-四方相转变,但四方相结构不稳定,存在的温度区间非常狭窄,故再次转变为立方相(Pm■m).紫外-可见-近红外吸收光谱和光致发光谱研究表明,CH₃NH₃PbCl₃单晶的吸收截止边约在波长442 nm,光致发光峰为450 ...     

对2000年高考（天津卷）第（13）题的修正

2000年普通高等学校招生全国统一考试(天津卷)数学(理工农医类)第(13)题。     

Comparison of electrical characteristic between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes

Ni/Au Schottky contacts on A1N/GaN and A1GaN/GaN heterostructures are fabricated. Based on the measured current-voltage and capacitance-voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an A1GaN/GaN diode by self-consistently solving Schrodinger＇s and Poisson＇s equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostrncture results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an A1GaN/GaN diode.     

手持数码相机获取场景三维点云的实现

利用计算机视觉进行三维点云获取是一种实用方便的三维信息提取方法,在工业检测和三维建模等领域应用广泛.鉴于传统固定相机方法中存在着灵活性差,适用范围小的问题,提出了一种手持单相机的三维点云获取方法.实验结果表明,该方法在室外场景点云获取应用中较传统方法在灵活性方面具有非常明显的优势.     

Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Using measured capacitance-voltage curves and current-voltage characteristics for the AlGaN/AlN/GaN heterostructure field-effect transistors with different gate lengths and drain-to-source distances,the influence of drain bias on the electron mobility is investigated.It is found that below the knee voltage the longitudinal optical(LO) phonon scattering and interface roughness scattering are dominant for the sample with a large ratio of gate length to drain-to-source distance(here 4/5),and the polarization Coulomb field scattering is dominant for the sample with a small ratio(here 1/5).However,the above polarization Coulomb field scattering is weakened in the sample with a small drain-to-source distance(here 20 μm) compared with the one with a large distance(here 100 μm).This is due to the induced strain in the AlGaN layer caused by the drain bias.