二维介质PBG结构的工程设计

针对介质材料中按二维菱形周期排列空气圆孔的PBG结构，采用平面波展开法结合迭代技术的理论分析程序，对结构尺寸与介质参数的不同组合进行了批量计算，根据对计算结果的分析，归纳出阻带范围与结构参数之间的函数关系，经数据拟合得出一组准确而快捷的工程设计公式，还给出了根据预期的阻带范围设计PBG结构参数的简明步骤，实例验证了该组公式的实用性。     

紧凑型FLC光纤PDL模块

描述了紧凑型FLC（铁电液晶）光纤PDL（光子延迟线）模块的结构和运转特性；分析了插入损失；提出多信道运转时依赖于波长的设计方案。     

Shear ductility and toughenability study of highly cross-linked epoxy/polyethersulphone

The objective of the present study was to determine whether the ductility and toughenability of a highly cross-linked epoxy resin, which has a high glass transition temperature, T _g, can be enhanced by the incorporation of a ductile thermoplastic resin. Diglycidyl ether of bisphenol-A (DGEBA) cured by diamino diphenyl sulphone (DDS) was used as the base resin. Polyethersulphone (PES) was used as the thermoplastic modifier. Fracture toughness and shear ductility tests were performed to characterize the materials. The fracture toughness of the DDS-cured epoxy was not enhanced by simply adding PES. However, in the presence of rubber particles as a third component, the toughness of the PES–rubber-modified epoxy was found to improve with increasing PES content. The toughening mechanisms were determined to be rubber cavitation, followed by plastic deformation of the matrix resin. It was also determined, through uniaxial compression tests, that the shear ductility of the DDS-cured epoxy was enhanced by the incorporation of PES. These results imply that the intrinsic ductility, which had been enhanced by the PES addition, was only activated under the stress state change due to the cavitation of the rubber particles. The availability of increasing matrix ductility seems to be responsible for the increase in toughness. This revised version was published online in November 2006 with corrections to the Cover Date.     

CO_2激光对兔脑组织血脑屏障的影响

同等功率和照射时间条件下,在14只家兔大脑皮质运用伊文思蓝染料和超微结构观察方法进行血脑屏障改变的研究。结果表明:CO_2激光作用十分表浅,且激光作用后的水肿层血脑屏障改变是可逆的。     

Ca原子的Penning离化

用614.3nm染料激光照射以Ne为缓冲气体的Ca空心阴极灯,观察到了Ca原子的Pen-ning离化效应。对比在Li空心阴极灯中获得的光电流信号,解释了Ca原子的彭宁离化。     

TRT入口方管道爆裂原因剖析

介绍了鞍钢7#高炉TRT装置入口方管道爆裂事故经过,进行了原因分析,并提出了解决措施。     

自适应相位制中波同步广播及现场试验

在本试验中，采用智能同步广播激励器和ＣＣＴＶ传输的１ＭＨｚ标频，实现了中波同步广播同频保护率趋于０ｄＢ．并提出了自适应相位跟踪同步的概念。     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

Performance analysis of adaptive interleaving for OFDM systems

We proposed a novel interleaving technique for orthogonal frequency division multiplexing (OFDM), namely adaptive interleaving, which can break the bursty channel errors more effectively than traditional block interleaving. The technique rearranges the symbols according to instantaneous channel state information of the OFDM subcarriers so as to reduce or minimize the bit error rate (BER) of each OFDM frame. It is well suited to OFDM systems because the channel state information (CSI) values of the whole frame could be estimated at once when transmitted symbols are framed in the frequency dimension. Extensive simulations show that the proposed scheme can greatly improve the performance of the coded modulation systems utilizing block interleaving. Furthermore, we show that the adaptive interleaving out performs any other static interleaving schemes, even in the fast fading channel (with independent fading between symbols). We derived a semi-analytical bound for the BER of the adaptive interleaving scheme under correlated Rayleigh fading channels. Furthermore, we discussed the transmitter-receiver (interleaving pattern) synchronization problem     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².