High-Density Read-Only Memory Disc with Ag11In12Sb51Te26 Super-Resolution Mask Layer

A novel read-only memory (ROM) disc with an Ag11ln12Sb51Te26 super-resolution mask layer is proposed and investigated for the first time to our knowledge. The carrier-to-noise ratio of more than 40 dB could be obtained from small pits (380nm), which are below the readout resolution limit (400nm), in our dynamic setup with a wavelength of 632.8 nm and numerical aperture of 0.40. Dependences of carrier-to-noise ratio on readout power,readout velocity and film thickness are studied. The results show that the optimum film thickness is 20-50nm and the corresponding carrier-to-noise ratio is more than 40dB at readout power of 4mW and readout velocity of 2m/s in our experiment. The super-resolution readout mechanism for this ROM disc is also discussed.     

Optical Recording Properties of Metal-Azo Dye as Recording Medium with Super-Resolution Near-Field Structure

A novel metallized azo dye has been synthesized. The absorption spectra of the thin film and thermal characteristic are measured. Static optical recording properties with and without the Bi mask layer super-resolution near-field structure （Super-RENS） of the metal-azo dye are investigated. The results show that the metal-azo dye film has a broad absorbance band in the region of 450-650 nm and the maximum absorbance wavelength is located at 603 nm. It is also found that the new metallized azo dye occupies excellent thermal stability, initiatory decomposition temperature is at 270℃ and the mass loss is about 48% in a narrow temperature region （15℃）. The complex refractive index N （N = n ＋ iκ） is measured. High refractive index （n = 2.45） and low extinction coefficient （κ = 0.2） at the recording wavelength 65Ohm are attained. Static optical recording tests with and without Super-RENS are carried out using a 65Ohm semiconductor diode laser with recording power of 7mW and laser pulse duration of 200ns. The AFM images show that the diameter of recording mark on the dye film with the Bi mask layer is reduced about 42%, compared to that of recorded mark on the dye film without Super-RENS. It is indicated that Bi can well performed as a mask layer of the dye recording layer and the metallized azo dye can be a promising candidate for recording media with the super-resolution near-field structure.     

基于VI-SLAM的四旋翼自主飞行与三维稠密重构

提出全自主的微型飞行器,使用板载传感器实现三维的同时定位与稠密重构。在ORB-SLAM系统的基础上,基于扩展卡尔曼滤波器实现了视觉-惯导的传感器融合,提高了系统的稳健性和精度以满足微型飞行器自主飞行的要求。由于ORB-SLAM系统创建的稀疏的特征地图不能用于微型飞行器的避障和导航,使用双目摄像机提出了改进的构建地图的方法,由稀疏特征点地图扩展为稠密的八叉树地图。通过EuRoC数据集进行评估,可以验证本文算法较基于关键帧的视觉-惯导算法平均精度提升了1倍。将本文算法应用于所搭建的四旋翼自主飞行平台,仅依靠板载传感器和处理器,实现了全自主飞行与稠密地图构建,验证了本文算法的有效性和稳健性。     

一种环形屏积分球光源的辐照均匀度研究

均匀光源被广泛应用于光学成像、遥感仪器的研制与标定等领域。提出了一种具有环形遮挡屏的积分球光源结构，以辐照均匀度分布特性为目标，利用蒙特卡洛(MCM)分析通过改变光源类型、挡板位置、开口大小、光源数量等参数对光源结构进行分析与优化。结果显示，朗伯特光源较之准直型光源辐照均匀度平均提高2.32%；挡板位置靠近积分球边缘时，辐照均匀度略低于其他位置；综合考虑辐射能量与照度均匀度，积分球开口比定在30%~35%区间内更为合适；辐射能量与光源数量呈线性关系，且不均匀度随光源数量在2.46%~3.38%波动。优化后的环形遮挡屏结构，可作为辐照均匀的光源应用于实际场景。     

Static recording characteristics of new type super-resolution near-field structure

A novel super-resolution near-field optical structure (super-RENS) with bismuth (Bi) mask layer is proposed in this paper. Static optical recording tests with and without super-RENS are carried out using a 650-nm semiconductor laser at recording powers of 14 and 7 mW with pulse duration of 100 ns. The recording marks are observed by high-resolution optical microscopy with a charge-coupled device (CCD) camera. The results show that the Bi mask layer can also concentrate energy into the center of a laser beam at low laser power similar to the traditional Sb mask layer. The results above are further confirmed by another Ar~+ laser system. The third-order nonlinear response induced by the plasma oscillation at the Bi/SiN interface during laser irradiation can be used to explain the phenomenon. The calculation results are basically consistent with our experimental results.     

Optical characterization of antimony-based bismuth-doped thin films with different annealing temperatures

Antimony-based bismuth-doped thin film,a new kind of super-resolution mask layer,is prepared by magnetron sputtering.The structures and optical constants of the thin films before and after annealing are examined in detail.The as-deposited film is mainly in an amorphous state.After annealing at 170-370℃,it is converted to the rhombohedral-type of structure.The extent of crystallization increased with the annealing temperature.When the thin film is annealed,its refractive index decreased in the most visible region,whereas the extinction coefficient and reflectivity are markedly increased.The results indicate that the optical parameters of the film strongly depend on its microstructure and the bonding of the atoms.     

超分辨近场结构技术及其应用

超分辨近场结构(Super RENS)技术是在传统的超分辨光盘技术和近场光学的基础上发展起来的新技术。介绍了Super RENS技术的基本原理:利用掩膜层的非线性效应或表面等离子体增强效应,在近场区域可以记录、读出超过衍射极限的信号。综述了该技术在纳米光信息存储和光刻方面应用研究的最新进展,提出了存在的问题,展望了它的发展前景。     

GeSbTe 与 AgInSbTe 体系相变光盘的研究进展

自Ovshinsky把相变材料用于光存储以来 ,一大批具有可逆光存储性能的材料不断出现 ,其中研究较多的是GeSbTe和AgInSbTe两种体系 .文章着重介绍了利用这两种材料制成的相变光盘记录介质的微观结构特点 ,阐述了其晶化机理 ;同时 ,较详细地概述了光盘的堆栈结构及掺杂其他元素对相变光盘性能的影响 ,并对比说明了GeSbTe和AgInSbTe两种体系在蓝光记录方面的各自特点     

一个数论函数的均值

研究了三进制中数字和函数的均值性质，给出了一般情况下均值A1(N)，A2(N)，A3(N)的求和公式．