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理论和实验均表明,快磁压缩等离子体的离子温度,随着等离子体柱的角向电场强度Eθ增加而增加,而Eθ又正比于感生此场强的放电线圈两端的电压.为了提高Eθ,可以采用倍压放电技术,将放电线圈两端的电压倍增.本文提出了一种新的倍压回路.一、倍压回路的基本原理及其短路性能1.基本原理:本回路的基本形式如图1(a)所示.其中Gs为起动开关,Gc为低气压间隙去耦式短路开关,负载为原GBH-1的主场线圈,电感为L1,传输电缆共六根,每根长为15m,分为两组.图1(b)为该倍压回路的等效回路,其中R1为负载线圈的电阻,Rc和Lc分别为短路开关的电阻和电感,R2和L… 相似文献
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在发展无极脉冲放电激光抽运时[1],我们曾发现平行平面的红宝石激光腔中产生规则的、准连续的张弛振荡,这是多模耦合的特征.而钕玻璃激光在阈值的单个尖峰,相对于光源有100微秒以上的延迟.这些现象既与这些固体介质特性有关,又与这种光源的特点有关.实验中的红宝石激光输出符合速率方程解的特征,我们先引入这个方程.一个三能级系统的腔中共有P0个模式,其中P个耦合在一起如同一个模一样振荡,振荡模中光子数q.... 相似文献
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本工作研究感应磁场压缩下,氢等离子体中的巴耳末系谱线的斯塔克加宽。电容器对围绕在放电管外部的线圈放电,产生交变轴向磁场,使放电管中氢气离化、压缩与加热。放电周期14微秒,放电电压20千伏,最大电流165千安,初始工作气压2.0×10-1毫米汞高。用照相方法研究Hβ和Hγ的轮廓。这些谱线有显著的加宽。在整个发光阶段中,Hβ的平均半宽度为14—16(埃),Hγ为18—19(埃),相应的离子密度为1.7—2.5×1016厘米-3。实验轮廓与Griem,Kolb和Shen的理论较为接近,与Holtsmark理论相差较远。光电测量进一步表明:Hβ的轮廓随着时间而改变,相应的离子密度亦在改变。在放电的第三半周期初级电流极大时,离子密度最大,达到3.2×1O16厘米-3,为初始氢原子密度的2.2倍。 相似文献
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对大功率延迟触发器中使用的氢闸流管的栅极点火特性,特别是延迟时间分散度做了比较细致的研究,对延迟时间做了理论计算,理论和实验符合得很好。本实验所用的延迟触发器输出电压幅度为3kV,电阻性负载的输出功率为十分之几兆瓦,最大时延50μs,改进型RC延迟器的时间分散度小于70ns,LC延迟触发器的时间分散度小于20ns。最后对进一步提高延迟时间的稳定性提出了若干改进措施。 相似文献
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Structures and Dynamics of Two-Dimensional Dust Lattices with and without Coulomb Molecules in Plasmas 下载免费PDF全文
Structures and dynamics of two-dimensional dust lattices with and without Coulomb molecules in plasmas are investigated. The experimental results show that the lattices have the crystal-like hexagonal structures, i.e. most particles have six nearest-neighboring particles. However, the lattice points can be occupied by the individual particles or by a pair of particles called Coulomb molecules. The pair correlation function is used to compare the structures between the lattices with or without the Coulomb molecules. In the experiments, the Coulomb molecules can also decompose and recombine with another individual particle to form a new molecule. 相似文献
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The oxygen and silicon ions have been obtained respectively from pulsed energetic dense oxygen plasma and silane plasma generated by electrodeless discharge. The oxygen ions have been injected into superconducting Nb films, and the Si ions into superconducting YBCO films in order to investigate the variation of their superconductivity with the ions injected into them. Auger profile data show that the injection depths range from 20 to 40nm in the films, depending on the injection condition and film material. The resistance-temperature relations (R-T curves) indicate that the superconductivity remains unchanged in the photoresist-masked part of the film, but is significantly changed in the exposed part. The evenness of the film surface remains unchanged after injection. This technique may serve as an alternative to the planar inhibiting fabrication technique in the fabrication of the multi-layer structure of superconducting films, and also possibly to the conventional plasma source ion implantation technique in material surface processing. 相似文献