酚羟基修饰的超高交联聚苯乙烯树脂对苯酚吸附及脱附性能的研究

对超高交联聚苯乙烯树脂进行酚羟基修饰得到修饰后的超高交联聚苯乙烯树脂(JN-2),将该树脂与大孔吸附树脂(Amberlite XAD-4)和超高交联树脂(NDA-150)在水溶液中对苯酚进行吸附-脱附性能比较,经过酚羟基修饰的超高交联聚苯乙烯树脂(JN-2)对苯酚的吸附性能有所提高,同时脱附性能明显改善,该树脂可望在含酚废水治理中得到广泛应用.     

Adaptive synchronization of chaos in permanent magnet synchronous motors based on passivity theory

An adaptive synchronization control method is proposed for chaotic permanent magnet synchronous motors based on the property of a passive system. We prove that the controller makes the synchronization error system between the driving and the response systems not only passive but also asymptotically stable. The simulation results show that the proposed method is effective and robust against uncertainties in the systemic parameters.     

A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

A novel reverse-conducting insulated-gate bipolar transistor(RC-IGBT) featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. Moreover, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device.     

High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator(SOI)power lateral MOSFET with a dual vertical field plate(VFP)in the oxide trench is proposed.The dual VFP modulates the distribution of the electric field in the drift region,which enhances the internal field of the drift region and increases the drift doping concentration of the drift region,resulting in remarkable improvements in breakdown voltage(BV)and specific on-resistance(Ron,sp).The mechanism of the VFP is analyzed and the characteristics of BV and Ron,spare discussed.It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V,and the Ron,sp decreases from 366 m·cm2to 110 m·cm2.     

Monolithic integration of an AlGaN/GaN metalinsulator field-effect transistor with an ultra-low voltage-drop diode for self-protection

In this paper,we present a monolithic integration of a self-protected AlGaN/GaN metal-insulator field-effect transistor(MISFET).An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features a selfprotected function for a reverse bias.This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage.In the smart monolithic integration,this integrated diode can block a reverse bias(> 70 V/μm) and suppress the leakage current(< 5 × 10-11 A/mm).Compared with conventional monolithic integration,the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration.And the power loss is lower than 50% in conduction without forward current degeneration.     

Fmoc-His(Mtt)-OH的合成

以二氯二甲基硅烷为双保护试剂,在碱性条件下组氨酸(His)的咪唑环和α-氨基位分别引入4-甲基-三苯甲基(Mtt)和9-笏甲氧羰基(Fmoc)保护基,合成了Fmoc-His(Mtt)-OH,其结构经1H NMR和MS确证。     

利用多项式拟合测量飞机油箱油量

飞机飞行中,测量剩余油量是关乎飞行安全的重要工作。以往采用的查表法存在存储数据量过大的问题,而插值法的计算又过于复杂,为此,提出了一种基于多项式数据拟合的油箱剩余油量测量方法,该方法通过存储多项式系数减少数据存储量,通过将多元插值计算改为多项式计算降低运算量。实验中,首先通过地面实验数据拟合获取多项式参数,再利用飞机飞行中获取的测量数据进行计算,所得结果与油箱内剩余油量的实际测量结果相比较,测量误差满足使用要求。通过理论和实验分析,在多项式拟合的阶数选择上明确了使用三阶多项式的合理性。该方法有较好的实用性,已在实践中应用。     

高碳铬铁在氢氧化钠水溶液中电化学氧化过程

铬铁电化学氧化法是一种新的制备铬酸钠的方法,然而高碳铬铁在NaOH水溶液中的电化学氧化过程尚不明确。 采用循环伏安法(CV)、稳态极化法(LSV)等电化学测试方法对金属铬、高碳铬铁在NaOH水溶液中的电化学氧化过程进行研究,通过扫描电子显微镜(SEM)、能量散射谱(EDS)和X射线光电子能谱(XPS)对高碳铬铁电解后固相产物表征,判断固相产物的组成。 结果表明,高碳铬铁不同于金属铬的电氧化过程,它在NaOH溶液中通过Cr(0)→Cr(Ⅵ)的电氧化方式生成铬酸钠,中间产物Cr(OH)₃和Fe(0)发生电化学反应生成稳定的FeCr₂O₄。 随着NaOH浓度的增加,电势较低时,受高碳铬铁中Fe(0)的影响,高碳铬铁容易在NaOH水溶液中发生钝化;当电势足够正时,钝化膜溶解,生成铬酸钠、氢氧化铁和亚铬酸亚铁,同时,阳极表面有氧气析出。 高碳铬铁电化学氧化制备铬酸钠的适宜条件:碱浓度≥2 mol/L,阳极电势≥1.6 V(vs.SCE)。     

压电胰岛素-C肽微阵列免疫传感器研究

以AT切型、基频10MHz的镀金膜石英晶体作为换能器,将抗人胰岛素和C肽单克隆抗体固定在石英晶体电极表面,用2×5检测池固定夹具构建一种新型压电胰岛素-C肽微阵列免疫传感器.研究了抗体固定方法、抗体工作浓度、固定量、一致性以及传感器的响应参数如检测温度、时间和特异性等的影响.该微阵列传感器在胰岛素浓度为2.5～160.0mIU/L、C肽浓度为0.375～12.0ng/mL范围内响应特性良好,压电晶体频率偏移值与胰岛素和C肽浓度呈良好的线性关系.将此微阵列传感器用于人血清标本的测定,结果与放射免疫法符合(r为0.92和0.94).此微阵列传感器具有灵敏度高、特异性好,低密度阵列结构,检测通量较高,不需标记,操作简单、能实时在线检测和重复使用等优点,能用于临床实验诊断,具有临床推广应用价值.     

低温等离子体对材料的表面改性

 冷等离子体对材料的表面改性,通过放电等离子体来优化材料的表面结构,是一种非常先进的材料表面改性方法。冷等离子体的特殊性能可以对金属、半导体、高分子等材料进行表面改性,该技术已广泛应用于电子、机械、纺织等工程领域。等离子体是“物质的第四态”,它是由许多可流动的带电粒子组成的体系。等离子体的状态主要取决于它的化学成分、粒子密度和粒子温度等物理化学参量,其中粒子的密度和温度是等离子体的两个最基本参量。实验室中采用气体放电方式产生的等离子体主要由电子、离子、中性粒子或粒子团组成。