Effect of the substrate crystalline structure on the magnetic, electrical, and crystallographic characteristics of La0.35Nd0.35Sr0.3MnO3 epitaxial films

A study has been made of the electrical resistivity ρ, magnetoresistance Δρ/ρ, and magnetization of La_0.35Nd_0.35Sr_0.3MnO₃ epitaxial films on ZrO₂(Y₂O₃), SrTiO₃, LaAlO₃, and MgO substrates. The first film can exist in four equivalent crystallographic orientations in the sample plane, while the other three have only one orientation. The maxima of ρ and Δρ/ρ of the first film are broadened considerably in the vicinity of the Curie point T _C compared to the three others, the magnitude of ρ itself being larger by 1.5 orders of magnitude, and a large negative magnetoresistance (|Δρ/ρ| ～ 10% in a field of 8.4 kOe) is observed at temperatures 80≤T≤200 K. In all films, the magnetic moment per molecule at 5 K is ～46% smaller than the pure spin value, due to the existence of magnetically disordered regions. The larger value of ρ of the film deposited on ZrO₂(Y₂O₃) is due to the electrical resistance of the boundaries separating regions with different crystallographic orientations, and the magnetoresistance is associated with polarized carriers tunneling through the boundaries coinciding with domain walls. The low-temperature magnetoresistance in fields above technical saturation is caused by the strong p-d exchange coupling within spin-ordered regions.     

Magnetic, electrical, and crystallographic properties of thin La1−x SrxMnO3 films

A study is reported of the magnetic, electrical, and crystallographic properties of La_1−x Sr_xMnO₃ (0.15⩽x⩽0.23) epitaxial films grown on single-crystal substrates of (001)ZrO₂(Y₂O₃) having the fluorite structure and (001)LaAlO₃ having the perovskite structure. It was found that films with close compositions for x=0.15 and 0.16, grown on different substrates, have different properties, namely, the film on a fluorite substrate is semiconducting and has a coercive strength 30 times that of the film on a perovskite substrate; the temperature dependence of electrical resistance of the latter film has a maximum around the Curie point T _C and follows metallic behavior for T<T _C. These differences are explained as due to different structures of the films. The x=0.23 film on the perovskite substrate has been found to exhibit a combination of giant magnetoresistance at room temperature with a resistance of ≈300 Ω which is useful for applications. The maxima in resistance and absolute value of negative magnetoresistance are accounted for by the existence of two-phase magnetic states in these films. Fiz. Tverd. Tela (St. Petersburg) 40, 290–294 (February 1998)     

Crystallographic,magnetic, and electrical properties of thin <Emphasis Type="Italic">Re</Emphasis><Subscript>0.6</Subscript>Ba<Subscript>0.4</Subscript>MnO<Subscript>3</Subscript> epitaxial films (<Emphasis Type="Italic">Re</Emphasis> = La,Pr, Nd,Gd)

Thin Re_0.6Ba_0.4MnO₃ epitaxial films (Re = La, Pr, Nd, Gd) grown on (001)SrTiO₃ and (001)ZrO₂(Y₂O₃) single crystal substrates have been prepared and studied. All the films were found to have a cubic perovskite structure, with the exception of the film with Re = La, which revealed rhombohedral distortion of the perovskite cell. The temperature dependences of the electrical resistivity and magnetoresistance pass through a maximum near the Curie point T_C, where the magnetoresistance reaches a colossal value. The magnetization isotherms M(H) are superpositions of a magnetization that is linear in field (like that of an antiferromagnet) and a weak spontaneous magnetization. The magnetic moment per formula unit is substantially smaller than that expected under complete ferro-or ferrimagnetic ordering. The magnetizations of samples cooled in a magnetic field (FC samples) and with no field applied (ZFC samples) differ by an amount that persists up to the highest measurement fields (50 kOe). The M(T) dependence obtained in strong magnetic fields is close to linear. Hysteresis loops of the FC samples are shifted along the field axis. The above magnetic and electric properties of thin films are explained in terms of two coexisting magnetic phases, which are due to strong s-d exchange coupling.     

La1－xPrxMnO3(x=0.1，0.2)薄膜庞磁电阻性质的研究

一种新的庞磁电阻氧化物薄膜La_1-xPr_xMnO₃(x=0.1，0 .2)薄膜用脉冲激光沉积(PLD)方法生长在(100)SrTiO₃单晶基底上.XRD结果显示 薄膜具有很好的外延单晶取向.电输运和磁性质的研究表明薄膜具有显著的庞磁电阻效应(CM R)效应，其中磁电阻比率达95％(在5T的磁场下).X射线光电子能谱(XPS)的结果表明薄膜体 系中Pr离子的价态为+4价，因此该薄膜很可能是电子掺杂的庞磁电阻体系. 关键词： 脉冲激光沉积 1-xPr_xMnO₃')" href="#">La_1-xPr_xMnO₃ 电子 掺杂 庞磁电阻     

Connection between colossal magnetoresistance in La0.85Sr0.15MnO3 and magnetic ordering inhomogeneities of a sample

Resistive and magnetic measurements are made for La_0.85Sr_0.15MnO₃. The dependence of resistivity on the applied magnetic field (10, 20, 30, and 50 kOe) and temperature (200–310 K) is analyzed using the s-d model and the obtained experimental data. The physical features that should be contained in models proposed to explain the colossal magnetoresistance of manganites with activation-type conductivity are determined. It is shown that the proposed mechanism associating the colossal magnetoresistance effect with phase separation into ferromagnetic and paramagnetic microregions near the Curie temperature has the necessary features.     

Electrical transport and magnetic properties of perovskite-type electron-doped La–Pr–Mn–O epitaxial films

La_1−xPr_xMnO₃ (LPrMO) thin films have been epitaxially grown on (1 0 0)SrTiO₃ single-crystal substrates by pulsed-laser deposition. The films have a perovskite structure and give rise to the colossal magnetoresistance effect with the maximum magnetoresistance ratio of 10³% (at 240 K and 5 T). The electrical transport and magnetic properties have been investigated for the La_0.8Pr_0.2MnO₃ film with thickness 3000 Å. The results indicate that the films have quite a distinctive magnetotransport behavior compared to the bulk. The analysis of X-ray photoemission spectroscopy suggests that the valence state of Pr is 4+ in LPrMO film. Therefore, the epitaxial film is most likely an electron-doped colossal magnetoresistance system.     

Giant volume magnetostriction and colossal magnetoresistance in La0.7Ba0.3MnO3 at room temperature

In single-crystal La_0.7Ba_0.3MnO₃, giant volume magnetostriction was observed for the first time to reach 2.54 × 10^?4 at room temperature and a still larger level of 4 × 10^?4 at the Curie point T _C = 310 K in a magnetic field of 8.2 kOe. At the same temperatures and magnetic field, this effect is complemented by a colossal magnetoresistance of 15.2 and 22.7%, respectively. The volume magnetostriction ω and magnetoresistance Δρ/ρ follow similar patterns in the proximity of T _C; namely, ω and Δρ/ρ are negative, maxima are observed in the |ω|(T) and |Δρ/ρ|(T) curves, and the ω and Δρ/ρ isotherms do not saturate in the highest fields applied. These phenomena are assigned to the fact that, in the above composition, there exists a two-phase magnetic (ferromagnetic-antiferromagnetic) state induced by strong s–d exchange.     

La0.7Sr0.3MnO3 film prepared by dc sputtering on silicon substrate: Effect of working pressure

La_0.7Sr_0.3MnO₃ films were prepared by dc sputtering on Si (100) substrate at different working pressure. The possibility of controlling the magnetic and transport properties of colossal magnetoresistance film is investigated, which has attracted great research interest for practical application. The as-grown film shows different magnetic, transport and magnetoresistance change at different working pressure at room temperature, which is quite attractive from technological point of view. Maximum magnetoresistance (MR) of ?5.56%, Curie temperature (T_c) of 325 K and metal insulator transition temperature (T_MI) of 278 K was achieved at room temperature.     

Experimental evidence of a two-phase magnetic state in thin epitaxial films of Re<Subscript>0.6</Subscript>Ba<Subscript>0.4</Subscript>MnO<Subscript>3</Subscript> (Re = La,Pr, Nd,Gd)

Thin epitaxial films of Re_0.6Ba_0.4MnO₃ (Re = La, Pr, Nd, Gd) on (001)-oriented single crystal SrTiO₃ and ZrO₂(Y₂O₃) substrates have been prepared and studied. All films possess a cubic perovskite structure, except for the film with Re = La, which exhibited a rhombohedral distortion of the perovskite lattice. The results show evidence for the presence of two magnetic phases, ferromagnetic (FM) and antiferromagnetic (AFM), in the films studied: (i) the magnetization isotherm M(H) appears as a superposition of a linear component (characteristic of antiferromagnets) and a small spontaneous magnetization component; (ii) the magnetic moment per formula unit is significantly reduced as compared to the value expected for the complete FM or ferrimagnetic ordering; (iii) there is a difference between magnetizations of the samples cooled with and without an applied magnetic field, which is preserved in the entire range of magnetic fields studied (50 kOe); (iv) the temperature dependence of the magnetization M(T) in strong magnetic fields is close to linear (for the composition with Re = Gd, M(T) is described by a Langevin function for superparamagnets with a cluster moment of 2μ_B); and (v) the magnetization hysteresis loops of the field-cooled samples are shifted along the field axis. The exchange integral (characterizing the Mn-O-Mn coupling via the FM-AFM phase boundary) estimated from the latter shift is | J|=10^?6 eV. This value is two orders of magnitude lower than the negative exchange integral between the FM layers in ReMnO₃, which makes the presence of a transition layer at the FM-AFM phase boundary unlikely. The temperature dependences of electrical resistance and magnetoresistance exhibit maxima at the Curie temperature (T_C), where the magnetoresistance reaches a colossal value. This behavior indicates that the two-phase magnetic state is caused by a strong s-d exchange.     

Hall resistivity in ferromagnetic manganese-oxide compounds

The transport properties of manganese-oxides are studied using the spin correlation fluctuation scattering mechanism. It is shown that the Hall resistivity in a small magnetic field exhibits a maximum near the Curie point, and a strong field shifts the peak position to high temperature and suppresses the peak value; the dependence of the Hall resistivity on the magnetic field above T_c and below T_c is different. These results agree with the experimental curves qualitatively, but disagree quantitatively, which indicates that the spin correlation fluctuation scattering might not be the dominant mechanism of the colossal magnetoresistance. The double polaron mechanism due to strong electron-phonon and electron-spin coupling is proposed to be responsible for the colossal magnetoresistance in manganese-oxides.     

Acoustic and magnetic properties of La<Subscript>0.825</Subscript>Sr<Subscript>0.175</Subscript>MnO<Subscript>3</Subscript> lanthanum manganites

This paper reports on measurements of the acoustic, magnetic, and electrical properties and on an x-ray microprobe analysis of a La_0.825Sr_0.175MnO₃ single-crystal sample. The acoustic studies were made with a pulsed acoustic spectrometer operating on a 770-MHz carrier. The studies revealed anomalies in the damping coefficients and sound velocity near 300, 200 K, and the Curie temperature T_C (283 K) where the colossal magnetoresistance occurs. The effect of a magnetic field on the magnetic texture of lanthanum manganites cooled below T_C, observed earlier in samples of other composition, is confirmed. In addition, a region was found wherein the magnetic susceptibility of an unclamped sample behaves anomalously. The electrical resistivity was observed to decrease substantially below T_C; this effect exhibits a hysteretic pattern in the interval 200–180 K.     

Anomalous influence of an external magnetic field on spin fluctuations in magnetic semiconductors with strong p-d hybridization and the colossal magnetoresistance effect

The colossal magnetoresistance effect in magnetic semiconductors based on lanthanum manganites has been investigated in terms of the model allowing for the effects of p-d hybridization and electronelectron Coulomb correlations. The influence of an external magnetic field on spin fluctuations has been considered under the conditions where the chemical potential is in a narrow heavy-fermion band formed in the hybridization gap. It has been shown that, in the vicinity of the Curie point T _C, the strong spin anharmonicity leads to an anomalously strong suppression of spin fluctuations by the external magnetic field, a phenomenon contributing significantly to the formation of colossal negative magnetoresistance.     

Magnetoresistance of lanthanum manganites with activation-type conductivity

The temperature dependence of the resistivity and magnetic moment of La_0.85Ba_0.15MnO₃ and La_0.85Sr_0.15MnO₃ manganite single crystals in magnetic fields up to 90 kOe is investigated. Analysis of the experimental results shows that the magnetoresistance of lanthanum manganites far from the Curie temperature T _C can be described quantitatively by the s-d model normally used for ferromagnets and taking into account only the exchange interaction between the spins of charge carriers and magnetic moments. These data also show that the features of lanthanum manganites responsible for colossal magnetoresistance (CMR) are manifested in a narrow temperature interval δT ≈ 20 K near T _C. Our results suggest a CMR mechanism analogous to the mechanism of giant magnetoresistance (GMR) observed in Fe/Cr-type multilayers with nanometer layer thickness. The nanostratification observed in lanthanum manganites and required for GMR can be described taking into account the spread in T _C in the CMR range δT.     

Giant magnetocaloric effect near the curie temperature in the Sm0.6Sr0.4MnO3 manganite

A method is proposed for the calculation of the magnetocaloric effect from simultaneous measurements of thermal expansion and magnetostriction made in different regimes (adiabatic and isothermal). The magnitude of the magnetocaloric effect for Sm_0.6Sr_0.4MnO₃ is estimated. It is found that near the Curie temperature T _C it passes through a maximum to reach a giant value ΔT=4.6 K for ΔB=0.84 T. In addition, in the neighborhood of T _C, we observed colossal magnetoresistance Δρ/ρ = [ρ(H) ? ρ(0)]/ρ(0) = 72% in a weak magnetic field of 0.84 T, a giant negative volume magnetostriction ω=?5×10^?4 in a field of the same strength, and a large change in the sample volume ΔV/V ≈ 0.1%.     

Magnetic, optical and transport properties of GaMnN films

GaMnN films with 1-3% Mn deposited on Si(100) and Al₂O₃(0001) substrates, by the technique of nebulized spray pyrolysis by employing acetylacetonate precursors, have been characterized by X-ray diffraction, photoluminescence spectra and other techniques. The films are ferromagnetic and show magnetic hysteresis. The ferromagnetic T_C increases with the Mn content, with the 3% Mn film showing a T_C of ∼250 K. Anomalous Hall effect is observed below T_C where the films exhibit a small negative magnetoresistance.     

Effect of thickness on magnetic phase coexistence and electrical transport in Nd0.51Sr0.49MnO3 films

We present the impact of the film thickness on the coexistence of various magnetic phases and its link to the magnetoresistance of Nd_0.51Sr_0.49MnO₃ thin films. These epitaxial films are deposited on LaAlO₃ (001) substrates by DC magnetron sputtering. Films with thicknesses of approximately 30 nm are found to be under full compressive strain while those with thicknesses ∼100 nm and beyond exhibit the presence of both strained and relaxed phases, as evidenced from X-ray diffraction studies. Both films exhibit multiple magnetic transitions controlled by strong electron correlations and phase coexistence. These films also display insulator–metal transitions (IMT) and colossal magnetoresistance (CMR) under moderate magnetic fields. Among the two set of films, only the 30-nm films show a weak signature of charge ordering at T≈50 K. Even at temperatures much lower than the IMT, the 30-nm films show huge magnetoresistance (MR) ∼80%. This suggests presence of softened charge-ordered insulating (COI) clusters that are transformed into ferromagnetic metallic (FMM) ones by the external magnetic field. In the 100-nm films, the corresponding MR is suppressed to less than 20%. Our study demonstrates that the softening of the COI phase is induced by the combined effect of the in-plane compressive strain and a slight reduction in Sr concentration.     

LaCaMnO/LaNdCaMnO/LaCaMnO三层膜中巨磁电阻增强效应

通过直流磁控溅射方法在SrTiO₃(001)衬底上制备了一系列La_0.67Ca_0.33MnO₃/(La_0.35Nd_0.65)_2/3Ca_1/3MnO₃/La_0.67Ca_0.33MnO₃(以下简写为LCMO/LNCMO/LCMO)外延三层膜，其中间层 关键词：     

Focused ion beam fabrication and magneto-electrical transport properties of La0.67Ca0.33MnO3 nanobridge

La_0.67Ca_0.33MnO₃ particle films with an average particle size of ~150 nm were grown on single-crystal silicon substrate using pulsed electron deposition technique and then focused ion beam was introduced to fabricate nanobridge in size of 300 × 900 nm on the particle film. The magneto-transport properties of both samples were studied. For the film, there is only one resistance peak at 182 K in temperature-dependent resistance (R–T) curves, which is far lower than ferromagnetic–paramagnetic transition temperature (T _C) of 250 K. When compared to the film, double peaks were observed in both R–T curves and magnetoresistance dependent on temperature (MR–T) curves of the nanobridge, one peak is at 186 K, which is very close to metal–insulator transition temperature (T _P) of film, the other one is at 250 K, which is close to the T _C of film, and these two peaks caused separately by grain and grain boundary (GB), which demonstrated that the electrical transport behavior of grain was separated from that of GB.     

Relation between giant volume magnetostriction and colossal magnetoresistance near the Curie temperature of Sm0.55Sr0.45MnO3

The magnetic, transport, and elastic properties of Sm_0.55Sr_0.45MnO₃ have been established to be interrelated. At the Curie point, one observes a large volume compression ΔV/V≈0.1%, a sharp minimum in the temperature dependence of negative volume magnetostriction ω(T), and a maximum in the temperature dependence of the electrical resistivity. Giant negative volume magnetostriction ω=?5×10^?4 has been found in a magnetic field H=0.9 T, which is accompanied by a colossal negative magnetoresistance of 44% in the same field. The results obtained are discussed in terms of a model of electronic phase separation.