忆阻电路降维建模与特性分析

通过对蔡氏忆阻电路的数学建模分析,提出了忆阻电路动力学建模的降维问题.以包含两个磁控忆阻器的忆阻电路为例,进行了忆阻电路降维建模,由此建立了一个三维系统模型.基于该模型,分析了忆阻电路的平衡点和稳定性,研究了电路参数变化时忆阻电路的动力学特性.进一步,对包含两个磁控忆阻器的忆阻电路常规模型的分析结果和其降维模型的分析结果进行了比较.结果表明:忆阻电路降维模型的维数只与电容器的数量和电感器的数量有关,而与忆阻器的数量无关;当电路参数变化时忆阻电路存在分岔模式共存等非线性现象;降维建模降低了系统建模复杂度,有利于系统的动力学特性分析,但消除了忆阻器内部状态变量的初始条件对忆阻电路动力学特性的影响.     

荷控忆阻器等效电路分析模型及其电路特性研究

忆阻器是物理上新实现的具有记忆特性的基本二端电路元件. 根据φ-q关系式的泰勒级数形式构建了荷控忆阻器等效电路分析模型, 以三次非线性荷控忆阻器模型为例, 对不同参数条件下的荷控忆阻器进行了伏安关系、有无源性等电路特性的理论分析. 结果表明: 荷控忆阻器的伏安关系具有斜体“8”字形紧磁滞回线特性, 随其参数符号的不同, 荷控忆阻器呈现出无源性和有源性, 导致其电路特性发生相应的变化; 相比无源荷控忆阻器, 有源荷控忆阻器更适用于作为二次谐波信号产生电路使用. 制作了荷控忆阻器特性分析等效电路的实验电路, 实验测量结果很好地验证了理论分析结果. 关键词： 荷控忆阻器 等效电路 伏安关系 电路特性     

忆阻元件与RLC以及二极管串并联电路的特性研究

对第四类基本电路元件:忆阻元件与RLC以及二极管串并联电路特性进行了研究,分别建立了两种电路的数学模型,并进行了仿真研究,分析了电路中的电容、电感、电阻等参数对电路特性的影响,得出了相关的结论.     

基于串并联磁控忆阻器的耦合行为研究

忆阻器是纳米级器件, 其功耗低, 集成度高, 有着巨大的应用潜能. 单个器件具有丰富的电学性质, 其串并联电路更展现了丰富的动力学行为. 然而, 忆阻器在高密度集成的环境下, 其耦合效应不可忽视. 因此, 本文首先基于磁控忆阻器推导了耦合忆阻器的数学模型. 其次, 在考虑不同极性连接和耦合强度的前提下, 讨论两个磁控忆阻器串并联的耦合情况, 进行了详细的理论分析, 并通过数值仿真探索了耦合效应对忆阻系统的影响. 同时, 设计了基于Matlab的图形用户界面, 直观地展示了不同参数下的耦合特性曲线. 进一步, 本文展示了有无耦合情况下, 初始阻值对忆阻器正常工作范围的影响. 最后, 构建耦合忆阻器的Pspice仿真器, 从电路的角度再次验证了忆阻器间的耦合效应. 实验结果表明: 同极性耦合增强了阻值的改变, 相反极性的耦合减缓了阻值的改变. 这些动力学特性可以很好地应用于忆阻网络中, 也为全面考虑忆阻系统电路的设计提供了强大的理论基础.     

The conductive mechanisms of a titanium oxide memristor with dopant drift and a tunnel barrier

Nano-scale titanium oxide memristors exhibit complex conductive characteristics, which have already been proved by existing research. One possible reason for this is that more than one mechanism exists, and together they codetermine the conductive behaviors of the memristor. In this paper, we first analyze the theoretical base and conductive process of a memristor, and then propose a compatible circuit model to discuss and simulate the coexistence of the dopant drift and tunnel barrier-based mechanisms. Simulation results are given and compared with the published experimental data to prove the possibility of the coexistence. This work provides a practical model and some suggestions for studying the conductive mechanisms of memristors.     

“三径”闭锁窗口模型的实验研究

 在解释CMOS器件辐射感应的闭锁窗口现象时，提出了所谓的“三径”闭锁窗口模型。在分析CMOS器件闭锁电路模型的基础上，简要介绍了“三径”闭锁窗口模型的有关情况。为了实验验证该模型，设计了实验电路以模拟CMOS器件的寄生闭锁路径，给出了相应的参数。“强光I”瞬时伽马辐照实验显示，实验电路像预计的那样出现了闭锁窗口。这说明，用“三径”模型解释某些闭锁窗口现象是合理的。     

双脉冲感应腔磁芯自动复位

 对采用电缆延时方法的双脉冲直线感应加速器组元感应腔磁芯的自动复位进行了模拟和实验研究。利用Pspice软件对Blumlein线充电预脉冲积分的影响因素进行了模拟,将预脉冲伏秒值与主脉冲幅度之比定义为“复位脉宽”,作为评判预脉冲对感应腔磁芯复位能力的判据。不同负载情况下的高压双脉冲实验结果表明,该判据有较高的准确度,依照判据要求调节Blumlein线负载后,可在基本不影响主脉冲的前提下解决双脉冲感应腔磁芯的复位问题。     

基于ITO/聚甲基丙烯酸甲酯/Al的有机阻变存储器SPICE仿真

探索了ITO/PMMA/Al器件的阻变机理及其SPICE电路仿真, 通过优化聚甲基丙烯酸甲酯(PMMA)层退火温度, 器件可实现连续擦-读-写-读操作. 基于不同退火温度PMMA薄膜的表面形貌研究, 构建了单层有机阻变器件的非线性电荷漂移模型, 以及描述该模型掺杂区界面移动的状态方程, 并通过反馈控制积分器建立了SPICE仿真电路. 最后, 代入器件实际测量参数, 得到与器件实际结果基本一致的电流-电压模拟曲线. 结果验证了单层有机器件的阻变机理, 说明该非线性电荷漂移模型的SPICE仿真在有机阻变器件仿真中同样适用. 关键词： 有机阻变存储器 非线性电荷漂移 SPICE仿真     

忆阻器及其阻变机理研究进展

忆阻器是除电阻、电容、电感之外的第四种电路元件,在信息存储、逻辑运算和神经网络等研究领域具有重要的应用前景.本文综述了忆阻器以及忆阻器材料的研究进展,主要介绍了忆阻器的内涵与特征、阻变机理、材料类型以及应用前景,指出了目前忆阻器研究中需要关注的主要问题,并对以后的发展趋势进行了展望.     

A chaotic circuit based on Hewlett-Packard memristor

Memristors are gaining increasing attention as next generation electronic devices. They are also becoming commonly used as fundamental blocks for building chaotic circuits, although often arbitrary (typically piece-wise linear or cubic) flux-charge characteristics are assumed. In this paper, a chaotic circuit based on the mathematical realistic model of the HP memristor is introduced. The circuit makes use of two HP memristors in antiparallel. Numerical results showing some of the chaotic attractors generated by this circuit and the behavior with respect to changes in its component values are described.     

Possible application of memristors in ESD protection

Memristors as fundamental two-terminal electric circuit elements can be miniaturised to extreme extents. However like other electronic devices memristors can have application in the field of electrical engineering as well, e.g. in the fields of over-current protection, over-voltage protection and EMC. This paper proposes an application opportunity of memristors in ESD protection. Based on their purely dissipative character, these devices can usefully co-operate with ceramic capacitors having no ability to dissipate the energy of ESD surges. A type of structure of memristors for ESD protection purposes and a SPICE model are proposed.     

Implementation of an analogue model of a memristor based on a light-dependent resistor

In this paper,an analogue model of a memristor using a light-dependent resistor(LDR) is presented.This model can be simplified into two parts:a control circuit and a variable resistor.It can be used to easily verify theoretical presumptions about the switching properties of memristors.This LDR-based memristor model can also be used in both simulations and experiments for future research into memristor applications.The paper includes mathematical models,simulations,and experimental results.     

有边界条件的忆阻元件模型及其性质

对第四类基本电路元件——忆阻元件的基本特性进行了研究,分别建立了无边界条件和有边界条件的忆阻元件的积分形式的数学模型.对有边界条件的数学模型进行了仿真,分析了有边界条件下电源频率和掺杂比、初始掺杂宽度等模型参数对电流、电压电流关系、磁链电荷关系等元件特性的影响,得出了相关的结论. 关键词： 忆阻元件 边界条件 数学模型 性质     

O(n) tricriticality in two dimensions

We present exact results for several universal parameters of the tricritical O(n) model in two dimensions. The results apply to the range −2⩽n⩽3/2, and include the central charge and three scaling dimensions, associated with temperature, magnetic field and the introduction of an interface. Since these results are based on an extrapolation of known relations between the O(n) and the Potts model, they cannot be considered as rigorous. For this reason, we perform an accurate numerical analysis of the central charge and the critical exponents. This analysis, which is based on transfer-matrix calculations on the honeycomb lattice, is in a full and precise agreement with the theoretical predictions.      

纳米级尺寸参数对钛氧化物忆阻器的特性影响

随着忆阻器研究的不断深入, 忆阻器的研究已经进入微观阶段, 包括忆阻器内部结构的探究、内部粒子间的运动规律、各参数对忆阻器特性的影响等. 然而, 这些成果中没有关于尺寸参数对忆阻器特性影响的研究, 而尺寸参数是忆阻器成功制备的关键因素之一, 这大大限制了忆阻器的发展和实际应用. 本文从欧姆电阻定律入手, 从理论角度详细分析了尺寸参数对惠普忆阻器以及自旋忆阻器的性能影响. 在此基础上进行了一系列电路仿真实验, 得到不同尺寸参数下忆阻器的相关特性曲线. 文中各选取其中最具代表性的四组实验结果进行展示, 对这些结果进行了详细分析, 得到了惠普忆阻器工作的最佳尺寸范围在8-12 nm之间以及自旋忆阻器工作的最佳尺寸范围在500-600 nm 之间的结论. 实验结果不仅可为实际运用提供有力的支持, 同时也将为进一步研制钛氧化物忆阻器器件和相关理论工作提供重要的实验基础和理论依据.     

温度改变对钛氧化物忆阻器导电特性的影响

相同测试条件下,纳米钛氧化物忆阻器的导电过程存在不稳定性,制约了对器件瞬态阻抗的精确读取与控制,并影响了器件应用于电路设计的可靠性与稳定性.杂质漂移与隧道势垒的共存是导致上述不稳定性的可能因素,且杂质漂移特性与环境温度密切相关.然而,目前尚无通过控制温度提高忆阻器导电稳定性的具体研究.基于杂质漂移与隧道势垒共存,本文分析了温度与忆阻器导电特性的关联,研究了器件活跃区域厚度及初始掺杂层厚度的改变对临界温度的影响,利用SPICE软件进行了仿真验证并给出结果,得出提高忆阻器导电稳定性的方法有:增大活跃区域厚度、降低初始杂质浓度及保持环境温度稳定且低于临界温度,从而为制备性能稳定的忆阻器及推动器件在实际电路中的应用提供依据.     

含磁控和荷控两种忆阻器的混沌电路设计与仿真

利用惠普实验室荷控和磁控两种忆阻器模型设计了一个五阶混沌电路. 数值仿真结果表明该电路在参数变化情况下能产生Hopf分岔和反倍周期分岔两种分岔行为,并能产生双涡卷、单涡卷、周期态等不同相轨道. 为了验证电路的混沌行为,利用基本元器件设计了惠普实验室荷控和磁控忆阻器模拟器,并将其应用到对所设计电路中进行Pspice仿真,电路仿真结果验证了理论分析的正确性. 关键词： 混沌电路 HP忆阻器 模拟器 Pspice仿真     

Calibration parameters for the probing tip of a magnetic force microscope in the field of a test current loop

The subject of discussion is calibration of the tip of a magnetic force microscope using the field of a ring-shaped current loop. To calculate the calibration parameters, the magnetic contribution from the extended tip of the probe in the field of the current loop to the rigidity of the cantilever is approximated by the contribution from a point magnetic dipole and magnetic “charge” in terms of the theoretical model adopted. Three simplified models of the conic tip (with a sharpened, blunted, and rounded top) are considered. The calculated dependences of the effective calibration parameters on the radius of the current loop are compared with experimental data. It is found that the model of a uniformly magnetized tip in the form of a blunted cone provides the best fit to the experiment. The calculation results may be helpful in simulating images obtained with a magnetic force microscope and numerically testing magnetic objects.     

A spintronic memristive circuit on the optimized RBF-MLP neural network

A radial basis function network (RBF) has excellent generalization ability and approximation accuracy when its parameters are set appropriately. However, when relying only on traditional methods, it is difficult to obtain optimal network parameters and construct a stable model as well. In view of this, a novel radial basis neural network (RBF-MLP) is proposed in this article. By connecting two networks to work cooperatively, the RBF's parameters can be adjusted adaptively by the structure of the multi-layer perceptron (MLP) to realize the effect of the backpropagation updating error. Furthermore, a genetic algorithm is used to optimize the network's hidden layer to confirm the optimal neurons (basis function) number automatically. In addition, a memristive circuit model is proposed to realize the neural network's operation based on the characteristics of spin memristors. It is verified that the network can adaptively construct a network model with outstanding robustness and can stably achieve 98.33% accuracy in the processing of the Modified National Institute of Standards and Technology (MNIST) dataset classification task. The experimental results show that the method has considerable application value.     

基于NPB的垂直构型有机发光晶体管的光电特性研究

通过将有机空穴阻挡材料BCP薄层插入垂直构型有机发光晶体管器件ITO/NPB（40nm）/Al（30nm）/NPB（20nm）/Alq₃（55nm）/Al中的不同位置对器件光电特性的影响来研究器件漏电流较大的原因以及器件中具体的载流子过程.充分证明了栅极注入的空穴对沟道中的电流有贡献.进而通过用LiF薄层修饰漏极来增强电子的注入并减小漏电流,得到了相对稳定的发光晶体管器件,其发光强度有很大提高并可很好地由栅极电压来进行调控.更换发光材料层容易得到不同颜色的发光晶体管. 关键词： 垂直构型有机发光晶体管（VOLET） 静电感应晶体管（SIT） N')" href="#">NPB （N N′-diphenyl-N')" href="#">N′-diphenyl-N N′-bis（1-naphtyl）-1')" href="#">N′-bis（1-naphtyl）-1 1′-biphenyl-4