Photocurrent Property of GaN on the Si Photodetector with a Nearly polycrystalline α—Al2O3 Buffer Layer

Using nearly polycrystalline α-Al2O3 as the buffer layer,GaN epilayers were grown on Si(111) substrates by lowpressure metal-oragnic chemical vapour deposition.The nearly polycrystalline α-Al2O3 was formed by anodic porous alumina annealed at high temperature,Prototype photoconductive detectors were fabricated with these materials.The spectral response of these detectors exhibits a relatively sharp cut-off near the wavelength of 360nm and a peak at 340nm with a shoulder near 360nm.Under 5V bias,the responsivities at 340nm and 360nm were measured to be 3.3A/W and 2.4A/W,respectively.The relationship between the responsivity and the bias voltage shows that the responsivity is saturated when the bias voltage reaches 5V.     

A New Method to Prepare Boron Nitride Thin Films

We report a new method to prepare boron nitride (BN) thin films on Si (100) substrates in an Ar-N2-BCl3-H2 gas system by magnetron arc enhanced plasma chemical vapour deposition. Fourier transform infrared spectroscopy (FTIR) and x-ray diffraction (XRD) are used to characterize the films. The FTIR spectra show that the deposited boron nitride films experienced a transition from pure h-BN phase to a cubic-containing phase with the variation of arc current ranging from IOA to 18A. The BN film with 42% c-BN was obtained without substrate bias voltage. In the gas system of Ar-N2-BCl3-H2, h-BN can be preferentially etched by chlorine. The chemical etching effect of chlorine allows the formation of c-BN without substrate bias voltage, which may develop a new perspective for the deposition of high quality c-BN film with low stress.     

Structural and Electrical Characteristics of Pb（Zr0.53,Ti0.47）O3 Thin Films Deposited on Si （100） Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.     

Dependence of Structure and Haemocompatibility of Amorphous Carbon Films on Substrate Bias Voltage

Tetrahedral amorphous hydrogenated carbon (ta-C:H) films on Si(lO0) substrates were prepared by using a magnetic-field-filter plasma stream deposition system. Samples with different ratios of sp^3-bond to sp^2-bond were obtained by changing the bias voltage applied to the substrates. The ellipsometric spectra of various carbon films in the photon energy range of 1.9-5.4eV were measured. The refractive index n and the relative sp^3 C ratio of these films were obtained by simulating their ellipsometric spectra using the Forouhi-Bloomer model and by using the Bruggeman effective medium approximation, respectively. The haemocompatibility of these ta-C:H films was analysed by observation of platelet adhesion and measurement of kinetic clotting time. The results show that the sp^3 C fraction is dependent on the substrate bias voltage, and the haemocompatibility is dependent on the ratio of sp^3-bond to sp^2-bond. A good haemocompatibility material of ta-C:H films with a suitable sp^3 C fraction can be prepared by changing the substrate bias voltage.     

Structural and Luminescence Properties of Transparent Nanocrystalline ZrO2：Er^3＋ Films

The structural and luminescence properties of nanocrystalline ZrO2 ：Er^3＋ films are reported. Transparent nano-ZrO2 crystalline films doped with Er^3＋ have been prepared using a wet chemistry process. An intense roomtemperature emission at 1527nm with a full width at half-maximum of 46 nm has been observed, which is assigned to the ^4Ⅰ13/2 → ^4Ⅰ15/2 intra-4f^n electric transition of Er^3＋. Correlations between the luminescence properties and structures of the nanocrystalline ZrO2 ：Er^3＋ films have been investigated. Infrared-to-visible upconversion occurs simultaneously upon excitation of a commercially available 980-nm laser diode and the involved mechanisms have also been explained. The results indicate that the nanocrystalline ZrO2：Er^3＋ films might be suggested as promising materials for achieving broadband Er^3＋-doped waveguide amplifiers and upconversion waveguide lasers.     

Polarization Fatigue in Ferroelectric Thin Films

The fatigue problem in ferroelectric thin films is investigated based on the switched charge per unit area versus switching cycles.The temperature,dielectric permittivity,voltage bias,frequency and defect valence dependent switching polarization properties are calculated quantitatively with an extended Dawber-Scott model.The results are in agreement with the recent experiments.     

Investigation of Chemical-Vapour-Deposition Dialnond Alpha-Particle Detectors

Diamond films with [100] texture were prepared by a hot-silament chemical vapour deposition technique to fabricate particale detectors.the response of detectors to 5.5MeV^241 am particles is studied.The photocurrent increases linearly and then levels off with voltage,and 7nA is obtained at bias voltage of 100V.The timedependent photocurrent initially increases rapidly and then tends to reach saturation.Furthermore,a little increase of the dark-current after irradiation can be accounted for by the release of the charges captured by the trapping centres at low energy levels during irradiation.An obvious peak of the pulse height distribution can be observed,associated with the energy of 5.5MeV.     

Composition Dependence of Spectroscopic Properties of Er^3＋ Doped TeO2-WO3-ZnO Glasses

Er^3 -doped TeO2-WO3-ZnO glasses were prepared and the absorption spectra, emission spectra and fluorescence lifetimes were measured. With more Te02 content in the glasses, the emission full width at half maximum (FWHM) increases while the lifetime of the ^4I13/2 level of Er^3 decreases. The stimulated emission cross-sectionof Er^3 calculated by the McCumber theory is as large as 0.86pm^2. The product of the FWHM and the emissioncross-section σe of Er^3 in TeO2-WO3-ZnO glass is larger than those in other glasses, which indicates that the glasses are promising candidates for Er^3 -doped broadband amplifiers. The Judd-Otfelt parameter Ω6 shows close composition dependence of the 1.5μm emission bandwidth. The more the TeO2 content is, the larger thevalues of Ω6 and FWHM.     

Modification of a YBa2Cu3O7—δ Thin Film Using an Atomic Force Microscope

A YBa2Cu3O7-δ thin film is modified by a probe electric field of an atomic force microscope to form a ridge with the width of only a grain cell.The modification varies with the operation parameters of the bias voltage,the moving velocity of the probe and the ambient humidity.Energy dispersive spectroscopy analysis shows only oxygen deficiency in the modified YBCO thin film.As a result,the suppressed superconductivity was found in the junction crossing the ridge.     

Characterization of vertical Au/β-Ga_2O_3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

High-resistivity β-Ga_2O_3 thin films were grown on Si-doped n-type conductive β-Ga_2O_3 single crystals by molecular beam epitaxy(MBE).Vertical-type Schottky diodes were fabricated,and the electrical properties of the Schottky diodes were studied in this letter.The ideality factor and the series resistance of the Schottky diodes were estimated to be about1.4 and 4.6×10~6 Ω.The ionized donor concentration and the spreading voltage in the Schottky diodes region are about4×10~(18)cm~(-3) and 7.6 V,respectively.The ultra-violet(UV) photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination.A photoresponsivity of 1.8 A/W and an external quantum efficiency of8.7 ×10~2%were observed at forward bias voltage of 3.8 V,the proper driving voltage of read-out integrated circuit for UV camera.The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive β-Ga_2O_3 thin films and the n-type conductive β-Ga_2O_3 single-crystal substrate.     

Upconversion properties of Er^3＋/Yb^3＋ co-doped TeO2-Nb2O5-Li2O glasses

The Er^3＋/Yb^3＋ co-doped TeO2-Nb2O5-Li2O glass is prepared by conventional melting method, and its upconversion spectra are measured. The intense green upconversion luminescence upon excitation with a 976 nm laser diode is observed with the naked eyes. The dependence of luminescence intensity on the ratio of Yb^3＋/Er^3＋ is discussed in detail, and the relationship between the ratio of green luminescence intensity to red luminescence intensity and the ratio of Yb^3＋/Er^3＋ is also studied, The luminescence intensity increases with the ratio of Yb^3＋/Er^3＋ increasing. The ratio of Yb^3＋/Er^3＋ plays a more important role than the concentration of Er^3＋ in determining the upconversion luminescence intensity. The ratio of green luminescence intensity to red luminescence intensity reaches a maximum when ratio of Yb^3＋/Er^3＋ is 3. Thus the glass could be one of the potential candidates for LD pumping solid-state lasers.     

Effects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5 film prepared by magnetron sputtering

The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal phase when annealing temperatures are 800℃ or higher.The lattice constant of Ta2O5 decreases with the increase of the O2/Ar ratio,which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process.For the films deposited in working gas mixtures with different O2/Ar ratios and subsequently annealed at 700℃,the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O2/Ar ratio from 0 to 1.Considering the presence of an SiO2 layer between the film and the silicon substrate,the optimal dielectric constant of Ta2O5 film was estimated to be 31.Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies,and the oxygen vacancy density and leakage current of Ta2O5 film both decrease with the increase of the O2/Ar ratio.The leakage current decreases after annealing treatment and it is minimized at 700℃.However,when the annealing temperature is 800℃ or higher,it increases slightly,which results from the partially crystallized Ta2O5 layer containing defects such as grain boundaries and vacancies.     

Performance of MPPC at low temperature

The performance of a MultiPixel Photon Counter (MPPC) from room to liquid nitrogen temperatures were studied. The gain, the noise rate and bias voltage of the MPPC as a function of temperature were obtained. The experimental results show that the MPPC can work at low temperatures. At nearly liquid nitrogen temperatures, the gain of the MPPC drops obviously to 35% and the bias voltage drops about 9 V compared with that at room temperature. The thermal noise rate from 10⁶ Hz/mm at room temperature drops abruptly to 0 Hz/mm at -100 ℃. The optimized operation point can be acquired by the experiment.     

Preparation of Diamond—Like carbon Films in methane by Electron Cyclotron Resonance Microwave Plasma Source Ion Implantation

Diamond-like carbon(DLC)films were prepared on Si(100) substrates by ion implantation from an electron cyclotron resonance microwave plasma source.During the implantation,650W microwave power was used to produce discharge plasma with methane as working gas,and-20KV voltage pulses were applied to the substrate holder to accelerate ions in the plasma.Confocal Raman spectra confirmed the DLC characteristics of the films.Fourier-transform infrared characterization indicates that the DLC films were composed of sp^3 and sp^2 carbonbonded hydrogen.The hardness of the films was evaluated with a Nano Indenter-XP System.The result shows that the highest hardness valus was 14.6 GPa.The surface rms roughness of the films was as low as 0.104nm measured with an atomic force microscope.The friction coeffcient of the films was checked using a ball-on-disk microtribometer.The average friction coefficient is approximately 0.122.     

Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor

The degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor was analyzed extensively,by means of drain voltage stress and gate bias stress.The results indicate that:(ⅰ) High constant drain voltage stress has only a negligible impact on the device electrical parameters,with a slightly first increase and then decrease in output current;(ⅱ) A negative shift of threshold voltage and increased output current were observed in the device subjected to forward gate bias stress,which is mainly ascribed to the hole-trapping induced by high electric field across the p-GaN/AlGaN interface;(ⅲ) The analyzed device showed an excellent behavior at reverse gate bias stress,with almost unaltered threshold voltage,output current,and gate leakage current,exhibiting a large gate swing in the negative direction.The results are meaningful and valuable in directing the process optimization towards a high voltage and high reliable enhanced AlGaN/GaN high-electron mobility transistor.     

Comprehensive studies on dielectric properties of p-methoxy benzylidene p-decyl aniline with function of temperature and frequency in planar geometry: A potential nematic liquid crystal for display devices

The dielectric properties of the nematic mesophase, p-methoxy benzylidene p-decyl aniline(MBDA), measured in planar geometry with a function of frequency and temperature are investigated in detail. The complex dielectric permittivity(ε' and ε') is also studied at a bias voltage of 10 V for planar aligned sample cell of nematic mesophase. The dielectric permittivity with bias voltage attains a higher( 2 times) value than that without bias voltage at a temperature of 56℃,which is due to the fact that the linking group of nematic molecules is internally interacted with an applied bias voltage.This is supported by observing an enhanced dielectric permittivity of nematic liquid crystal(LC) in the presence of bias voltage, which can be fully explained as the increasing of the corresponding dipole moment. The dielectric relaxation behaviors of nematic LC are also demonstrated for planar aligned sample cell. The remarkable results are observed that the relaxation frequency shifts into low frequency region with the increase of the bias voltage applied to the planar aligned sample cells. The dielectric relaxation spectra are fitted by Cole–Cole nonlinear curve fitting for nematic mesophase in order to determine the dielectric strength.     

Influence of APS bias voltage on properties of HfO_2 and SiO_2 single layer deposited by plasma ion-assisted deposition

HfO2 and SiO2 single layer is deposited on glass substrate with plasma ion assistance provided by Leybold advanced plasma source (APS). The deposition is performed with a bias voltage in the range of 70-130 V for HfO2, and 70-170 V for SiO2. Optical, structural, mechanical properties, as well as absorption and laser induced damage threshold at 1064 nm of HfO2 and SiO2 single layer deposited with the plasma ion assistance are systematically investigated. With the increase of APS bias voltage, coatings with higher refractive index, reduced surface roughness, and higher laser-induced damage threshold (LIDT) are obtained, and no significant change of the absorption at 1064 nm is observed. For HfO2, a bias voltage can be identified to achieve coatings without any stress. However, too-high bias voltage can cause the increase of surface roughness and stress, and decrease the LIDT. The bias voltage can be properly identified to achieve coatings with desired properties.     

Effect of external electric field on crystalline structure and dielectric properties of Bi_(1.5)MgNb_(1.5)O_7 thin films

Bismuth-based cubic pyrochlore materials have attractive dielectric properties, especially dielectric tunability. The Bi_(1.5)MgNb_(1.5)O_7 ceramic samples were prepared by solid state reaction. The XRD results and SEM pictures prove the raw material are well mixed and co-fired and the BMN cubic pyrochlore is well crystallized, no second phase was found in the result. BMN thin film were fabricated by depositing BMN ceramic nanoparticles on the sapphire. The BMN thin film has a high dielectric tunability of 43% at a bias voltage of 1.5 MV/cm, with loss tangent lower than 0.009. A Raman study of BMN cubic pyrochlore reveals O′–A–O′and O–A–O bending modes contribute to 80% of dielectric permittivity,obstructing these modes such as applying external electric field can have apparent influence on dielectric constant. Berry Phase calculation results shows that A_2 O′tetrahedrons are more easy to distort under an external field. The A-site Mg have the highest displacement(0.765028 ?), followed by A-site Bi cations(0.346317 ?). Compared to zero-bias thin film,the biased one with A–O and A–O′bonds being stretched and external coulomb force applied on cations and anions, the dielectric constant under bias field dramatically decreased.     

Nanoscale Impact Ionization and Electroluminescence in a Biased Scanning-Tunneling-Microscope Junction

Electroluminescence from a p-type Ga As(110) surface was induced by tunneling electrons in a scanning tunneling microscope under both polarities of bias voltage. The optical spectra exhibit a polarity-independent luminescence peak at 1.47 eV resulting from the exciton recombination. However, the quantum yield of photon emission at negative bias voltage is two orders of magnitude weaker than that at positive bias voltage. Moreover, the luminescence at negative bias voltage shows the linear depend...     

Growth of n-type ZnO thin films by using mixture gas of hydrogen and argon

High-quality oxide semiconductor ZnO thin films were prepared on single-crystal sapphire and LaAlOZnO薄膜 氩氢混合气体 薄膜生长 异质结构 薄膜物理学ZnO, PLD, heterostructureProject supported by the National Natural Science Foundation of China (Grant No 19974001) and the National Key Basic Research Special Foundation of China (Grant No NKBRSF G1999064604 and G2000036505).2005-05-309/3/2005 12:00:00 AMHigh-quality oxide semiconductor ZnO thin films were prepared on single-crystal sapphire and baAlO3 substrates by pulsed laser deposition （PLD） in the mixture gas of hydrogen and argon. Low resistivity n-type ZnO thin films with smoother surface were achieved by deposition at 600℃ in 1Pa of the mixture gas. in addition, ferromagnetism was observed in Co-doped ZnO thin films and rectification Ⅰ - Ⅴ curves were found in p-GaN/n-ZnO and p-CdTe/n-ZnO heterostructure junctions. The results indicated that using mixture gas of hydrogen and argon in PLD technique was a flexible method for depositing high-quality n-type oxide semiconductor films, especially for the multilayer thin film devices.