低激光能流沉积高质量的NdB2Cu3O7-x/YBa2Cu3O7-y高温超导薄膜

采用脉冲激光方法,先在YSZ（yttria stablized zirconia)衬底上制备（YBa2Cu3O7-y)/YSZ高温超导薄膜,再用较低的激光能流密度（1.2-1.0Jcm^-2)沉积一层NBCO（NdB2Cu3O7-x)薄膜,形成NBCO／YBCO／YSZ双层超导薄膜。在制备完当时,存放40天和存放400天后分别对薄膜进行了X射线衍射分析和电阻－温度曲线测量。结果表明,NBCO／YBCO／YSZ双层膜的转变温度、结晶度和表面稳定性及光滑度都优于YBCO／YSZ薄膜的。在YBCO／YSZ上使用较低的激光能量可以制备出优质的c轴取向NBCO高温超导薄膜。     

金属有机物化学气相法制备YBCO超导薄膜研究

运用金属有机物化学气相沉积法(MOCVD),在LaAlO3(LAO)单晶上沉积YBa2Cu3O7-x(YBCO)超导薄膜。通过使用优化的进液装置,使金属有机源连续、稳定地输送至蒸发皿进行闪蒸。通过优化总气压、氧分压等生长条件,获得高质量的YBCO薄膜。在固定的温度条件下,调节反应总气压和氧分压,在总压为380Pa,氧分压为180Pa获得YBCO薄膜临界电流密度Jc=0.6MA/cm2。随着氧分压增大,YBCO薄膜产生a轴取向,(005)峰向左偏移,且薄膜中的Cu/Ba由1.0变化至1.63。在Cu/Ba=1.48时,YBCO薄膜结构与性能较优。     

高温超导YBa2Cu3O7-δ-Y2O3多层薄膜的制备及性能表征

采用脉冲激光沉积技术(PLD)在LaAlO3(100)单晶衬底上外延生长YBa2Cu3O7-δ-Y2O3多层薄膜,用X射线衍射技术(XRD)分析薄膜的物相结构和外延特性,通过原子力显微镜(AFM)观察薄膜的表面形貌.本文主要研究了最佳工艺参数下交替生长多层YBCO-Y2O3膜的超导性能.结果表明,YBa2Cu3O7-δ-Y2O3薄膜为纯c轴取向外延生长,临界电流密度Jc(H=0或H//C)均高于纯YBCO薄膜,纳米Y2O3起到磁通钉扎中心作用.     

低温热解速率对低氟化学溶液法制备YBa_2Cu_3O_(7-δ)膜形貌及超导性能的影响（英文）

为了探讨低氟前驱液对应的低温热解过程的升温速率对超导膜YBa2Cu3O7-δ(YBCO)表面形貌和超导性能的影响,我们在不同的低温热解速率下(1,3,5,10,15,20℃/min)制备了一系列的超导膜.低氟前驱液中的氟含量比全氟前驱液中减少了大约50%.X光衍射(XRD)分析表明:采用低氟前驱液,在很大的升温速率窗口,都能容易地获得良好外延生长的YBCO超导薄膜.但是,过快的热解速率(如15、20℃/min),会导致超导膜表面的恶化,出现皱褶或裂纹.升温速率在1℃/min和10℃/min之间,自场下的临界电流密度(JC)能保持比较高的值.在当前实验条件下,考虑YBCO超导膜的综合性能,5℃/min是最合适的低温热解速率.采用低氟前驱液,在5℃/min,600nm的YBCO膜的低温热解时间可以缩短到50分钟,其样品织构良好、表面平整;在LaAlO3单晶上制备的200nm的YBCO膜可以获得JC为3.0MA/cm2左右(77K,自场).     

GaAs表面不同运动状态H2SO4-H2O2-H2O液滴的红外辐射特性

利用红外热像实时监测系统,研究了GaAs表面不同运动状态(包括静止状态、缓慢运动状态、快速运动状态)下H₂SO₄-H₂O₂-H₂O液滴的红外辐射特性,并对实验结果和研究价值进行分析.主要的实验结论包括：静止状态时,反应生成热在液滴内部向上对流,液滴顶部为红外辐射灰度峰值,并向液滴边缘陡降,同时,生成热将沿GaAs基片向周边扩散;缓慢运动时,液滴后存在类似于“彗尾”的热残留现象,表现为温度降低、灰度峰值与液滴运动同向的“双重运动特性”,灰度峰值位移曲线与液滴实际位移存在差异,温度最高点有可能位于“慧尾”中;快速运动时,液滴未与GaAs反应便脱离基片,表现为“液膜轨迹”现象,辐射灰度从液膜边缘到液膜中心为半椭圆面的平缓过渡,并分析了轨迹中心灰度值的分布与变化特性.液滴运动热行为红外监测方法的提出,在推动液滴自身研究的同时,也将进一步推动红外技术与材料科学、化学科学等交叉学科的融合. 关键词： 红外热像 实时监测 液滴 砷化镓     

Y_2O_3缓冲层对YBCO超导转变温度的影响（英文）

超导薄膜所受的应力对其临界转变温度Tc具有重要的影响,研究应力对超导薄膜Tc的影响对获得更高Tc材料具有重要意义.本文采用溶胶-凝胶法,在LAO单晶基板上制备了Y2O3/YBCO薄膜,并研究了Y2O3缓冲层对不同厚度YBCO超导薄膜的临界转变温度的影响.研究发现,当YBCO薄膜厚度为90nm时,由于Y2O3和YBCO薄膜的晶格错配,在YBCO/Y2O3薄膜的a-b面内引入了压应力,增加了c轴的晶格常数,结果提高了YBCO薄膜的临界转变温度.当YBCO薄膜的厚度较大时(如230nm),由晶格错配引起的应力通过位错的形式得以释放,YBCO薄膜的Tc变化不大.     

超导转变温区YBa2Cu3O7薄膜样品的表面电阻测量

我们对高温超导YBa2Cu3O7(YBCO)薄膜样品在超导转变温区微波表面电阻RS随温度变化的初步测量结果.利用介质谐振器方法,分别测量了由镀银高纯铜标准试样和脉冲激光淀积方法制备的高温YBCO超导薄膜为下底板的谐振器品质因素随温度变化的数据.通过对镀银高纯铜标准试样和RS为零的谐振器数据分析,得到谐振器参数随温度变化的曲线.由有高温YBCO超导薄膜组成的谐振器Q值随温度变化数据得到YBCO薄膜样品超导转变温区微波表面电阻的变化.讨论了YBCO超导薄膜的微波表面电阻测量结果.     

YBa2Cu3O7-δ/LaAlO3和Tl2Ba2CaCu2O8/LaAlO3高温超导薄膜内的应变对其微波表面电阻影响的研究

YBa2Cu3O7-δ/LaAlO3 (YBCO/LAO) 超导薄膜是通过热蒸发沉积方法制备的,实验中使用的Tl2Ba2CaCu2O8/LaAlO3 (TBCCO/LAO) 超导薄膜是通过直流磁控溅射方法制备的.通过分析两片超导薄膜的XRD谱计算出了两片超导薄膜内的应变,ΔCY=4.8483×10-3;ΔCT=8.5272×10-5,结果显示YBCO超导薄膜内的应变要大于TBCCO超导薄膜内的应变.另外,采用共面谐振技术研究这两片超导薄膜内的微波表面电阻随温度的变化,结果表明YBCO超导薄膜具有更大的微波表面电阻.分析和讨论了应变对超导薄膜微波表面电阻的影响.     

YBCO液相外延生长初始阶段的研究

通过液相外延生长的方法能制备高质量的YBa2Cu3O7-δ(YBCO)超导厚膜.利用高温金相显微镜,在大气气氛下实时观测了沉积在MgO基片上的YBCO薄膜熔化过程以及随后冷却过程中的液相外延生长初始阶段.通过对包晶分解过程的控制,留下部分微米级YBCO晶粒,并以此作为外延生长的种子.实验结果表明,通过包晶反应Y2BaCuO5+Liquid→YBa2Cu3O7-δ,能在这些剩余的YBCO晶粒周围快速外延生长出YBCO晶体.本文探讨了初始阶段的生长动力学以及外延生长取向问题.     

氧气中退火对Ag与YBa2Cu3O7-δ超导薄膜相互作用的影响

本文通过多种实验手段对Ag/YBCO薄膜退火后Ag膜与YBCO薄膜的相互作用进行了研究。Ag/YBCO在退火过程中,存在着Ag沿YBCO的表面的横向扩散和向YBCO薄膜内部的纵向扩散,Ag的纵向扩散有一定深度。Ag与YBCO很可能发生物理而非化学作用,渗透进入YBCO的Ag可能在YBCO的晶界处形核生长,使YBCO晶格发生畸变,产生应力,从而导致接触电阻值的增大。     

湿法腐蚀进程的红外热像学研究

提出了一种研究湿法腐蚀进程的新方法———红外热像法。在湿法腐蚀中,金属或半导体基片浸泡在化学试剂中,由于化学能的作用,会在溶剂中产生热能,从而发出红外辐射,利用红外热像仪,将探测到的红外辐射信号送至计算机进行处理,得到热像图,从而可以对湿法腐蚀的进程进行分析。理论分析和实验结果都表明,红外热像法可以直观地观测到湿法腐蚀时显著的热扩散过程,从而对湿法腐蚀进程的监测、控制具有指导意义,同时也是红外技术应用的扩展。     

利用BFEL研究高温超导钇钡铜氧薄膜的中远红外特性

 报导了一种钇钡铜氧（YBCO）高温超导薄膜中远红外光探测器。在中远红外波段，利用北京自由电子激光对其响应特性进行了实验研究。对于微桥尺寸为210μm×70μm×0.3μm的样品,测量了电压响应、谱响应和时间响应。实验表明，在液氮温度下工作的YBCO高温超导光探测器不仅具有快速响应、较高灵敏度的特点，而且具有良好的宽带特性和较好的稳定性。     

化学溶液沉积制备氧化石墨烯掺杂YBCO薄膜

YBCO薄膜在液氮温区具有优异的性能,围绕低成本溶液沉积技术和新型添加剂的研究是目前研究热点.采用化学溶液沉积技术成功制备出氧化石墨烯掺杂YBCO薄膜。通过在YBCO前驱液中引人氧化石墨烯,改变YBCO胶体的热解行为,促进YBCO前驱体的分解.在晶化过程中,氧化石墨烯有利于抑制YBCO晶粒长大.结果表明,适量添加氧化石墨烯可以改善YBCO薄膜的微观形貌和外延生长,提高超导层的性能.     

化学溶液沉积(CSD)法制备YBCO薄膜研究进展

采用CSD法制备YBCO薄膜可精确的控制组份,不需要真空设备,成为近年来的研究热点之一。文中概述了CSD法制备YBCO薄膜的研究进展,总结了在不同的CSD工艺中,起始原料、化学添加剂对YBCO薄膜热处理时间、质量、可重复性等因素的影响。     

零视距地物长波红外特征场景仿真研究

为仿真地物长波红外场景图像,根据地表温度随时间变化的规律,并结合气象状况、背景材质、热特性参量、热状态等参数,在对太阳辐射、大气长波辐射、大气温度和地表热传导等影响地表温度变化的因素进行分析的基础上,建立了基于热平衡理论和热传导过程的方程。解算出多种常见地表一日之中的温度变化情况,并将其应用于由相同景物可见光纹理图像反演出的相应红外纹理图像中。在考虑景物表面自身发射、反射的辐射计算模型的前提下,生成了具有相似红外纹理细节的地表红外场景。结果表明,该方法可生成接近真实感的红外场景,有效地模拟仿真地物的长波红外特征。     

Temperature sensor based on etched optical fiber with a metal coating

Presented in this work is a new class of optical fiber temperature sensor, of which the heat-expansion thin film is coated on the etched fiber. It uses the method that combine thermal carving technique with chemical etching. The sensitivity of the sensor is increased and the shape size is decreased. This sensor possesses the linear temperature response and the good repeatability. These sensors can be used to measure finely the temperature which is lower than 200°c.     

Tuning the absorption band in the THz range of YBCO films patterned by means of HEHI lithography

High energy heavy ion lithography was used for modulating through implanted nanostructures the local structural and electrical properties of high temperature superconducting YBa₂Cu₃O₇ films. The controlled reduction of the critical temperature of irradiated films results in a localization into heavy ion patterned micro-regions of the electrical dissipation, viable in a given temperature range and driven by ion fluence, bias current and applied magnetic field. The measurement of the response of such nanostructured YBCO films to electromagnetic radiation in the infrared band (MIR–FIR region) is presented. It turns out that the ion induced structural modification of both superconducting film and substrate is actually enabling the infrared optical absorption of YBCO, so that the viability of low noise THz detection above the liquid nitrogen temperature is shown.     

Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching

Surface segregation of group V dopant during thin film epitaxy of Si/SiGe heterostructures causes severe limitation on the sharpness of n-type doping profiles in pn junctions. Existing techniques for removal of surface segregated arsenic suffer from either high thermal budget or aggressive (ex situ) wet chemical etching. An in situ low temperature method is clearly desirable, particularly for device structures with high Ge content such as resonant tunnelling diodes, in order to minimize diffusion of the matrix elements as well as maintain structural integrity. In situ etching by atomic hydrogen is shown to be ideal for this purpose. The reaction mechanism ensures that this can only be a low temperature process and the method is shown to be highly effective and selective in the removal of surface segregated As. In comparison with other techniques, atomic hydrogen etching is also shown to be less aggressive and has a smaller impact on the surface/interface quality.     

液相硝基甲烷分子振动特性的相干反斯托克斯拉曼散射光谱

构建时间分辨相干反斯托克斯拉曼散射（CARS）光谱系统,从微观层次研究硝基甲烷的分子相干振动动力学特性.实验中采用超连续白光作为斯托克斯光,通过调整斯托克斯光的时间延迟,得到不同振动模式的CARS光谱.通过对振动弛豫曲线的拟合,获得硝基甲烷分子不同振动模式的振动失相时间.结果表明C–H键伸缩振动比C–N键伸缩振动更容易受热声子的影响.在热加载下,硝基甲烷分子的C–H键有望首先被激发并引起初始化学反应.     

Chemical etching of silicon by CO2-laser-induced dissociation of NF3

The pulsed infrared laser dissociation of NF₃ is reported for the first time, and is used to investigate silicon etching. The role played by collision-enhanced multiple-photon absorption and dissociation is considered, with data on the nonlinear decrease of the absorption cross-section with increasing pulse energy and increasing pressure presented. Using an experimental arrangement in which the laser beam is focussed parallel to the surface, the dissociation process induces spontaneous etching of silicon. Fluorinecontaining radicals diffuse from the focal volume to the surface where a heterogeneous chemical reaction occurs. Etching was monitored by use of a quartz-crystal microbalance upon which a thin film of amorphous silicon was deposited. For a surface with no previous exposure to the photolysis products, dissociation causes the formation of a surface layer prior to the onset of etching. X-ray photoelectron spectroscopy demonstrates this to be a fluorosilyl layer possessing a significant concentration of SiF₃ and SiF₄. In contrast, a surface already thickly fluorinated does not form a thicker layer once laser pulsing commences again. In this case, etching starts immediately with the first pulse. The etch yield dependencies on several parameters were obtained using silicon samples possessing a thick fluorosilyl surface layer. These parameters are NF₃ pressure, laser wavenumber, pulse energy, buffer gas pressure, and perpendicular distance from focal volume to surface. Modeling of the etch yield variation with perpendicular distance shows the time-integrated flux of radicals impinging on the surface to be inversely proportional to the distance. Attempts at etching SiO₂ under identical conditions were unsuccessful despite the evidence that thin native oxide films are removed during silicon etching.