Dual-function terahertz metasurface based on vanadium dioxide and graphene

A dual-function terahertz metasurface based on VO₂ and graphene is proposed in this paper. It consists of a gold layer embedded with VO₂ patches, a SiO₂ spacer layer, a VO₂ layer, graphene and a SiO₂ spacer substrate. When the bottom VO₂ layer is in the metallic state, the designed metasurface can achieve absorption. When the top VO₂ patches are in the metallic state, the proposed metasurface can be used as a single-band absorber with terahertz absorptance of 99.7% at 0.736 THz. When the top VO₂ patches are in the insulating state, the designed structure behaves as a dual-band absorber with an absorptance of 98.9% at 0.894 THz and 99.9% at 1.408 THz. In addition, the absorber is polarization insensitive and keeps good performance at large angles of incidence. When the bottom VO₂ is in an insulating state, the metasurface shows electromagnetically induced transparency. The transparent window can be dynamically regulated by controlling the chemical potential of graphene. The proposed metasurface exhibits the advantages of terahertz absorption, electromagnetically induced transparency and dynamic control, which provides more options for the design of terahertz devices in the future.     

Tunable terahertz acoustic-phonon emission from monolayer molybdenum disulfide

The acoustic-phonon emission from monolayer molybdenum disulfide (ML-MoS₂) driven by a direct-current electric field is studied theoretically using the Boltzmann equation method. It is found that the Cerenkov emission of terahertz acoustic-phonons can be generated when a very weak electric field is applied to ML-MoS₂. The physical mechanisms of acoustic-phonon emission are analyzed from the perspective of condensed matter physics. The acoustic-phonon emission from ML-MoS₂ is also compared with those from graphene and GaAs. The results reveal that the frequencies of acoustic-phonons generated by ML-MoS₂ are between the frequencies of those generated from GaAs and graphene. The results of this work suggest that the ML-MoS₂ can make up for graphene and GaAs in respect of acoustic-phonon emission and be used in tunable hypersonic devices such as terahertz sound sources.     

Room temperature NO_2-sensing properties of hexagonal tungsten oxide nanorods

Hexagonal WO_3 nanorods were synthesized through a facile hydrothermal method. The nanorods properties were investigated by scanning electron microscope(SEM), transmission electron microscope(TEM), energy dispersive spectroscopy(EDS), and x-ray diffraction(XRD). The NO_2-sensing performances in terms of sensor response, response/recovery times and repeatability at room temperature were optimized by varying the heat treatment temperature of WO_3 nanorods. The optimized NO_2sensor(400-℃-annealed WO_3 nanorods) showed an ultra-high sensor response of 3.2 and short response time of 1 s to 5-ppm NO_2. In addition, the 400-℃-annealed sample exhibited more stable repeatability.Furthermore, dynamic responses measurements of annealed samples showed that all the annealed WO_3 nanorods sensors presented p-type behaviors. We suppose the p-type behavior of the WO_3 nanorods sensor to be that an inversion layer is formed in the space charge layer when the sensor is exposed to NO_2 at room temperature.Therefore, the 400-℃-annealed WO_3 nanorods sensor is one of the most energy conservation candidates to detect NO_2 at room temperature.     

CVD合成的掺杂BNx-石墨烯纳米复合材料:结构和发光性能

用B₄C为硼源,利用CVD系统在N₂-H₂等离子体中合成了掺杂BN_x纳米棒,接着在掺杂BN_x纳米棒表面用CH₄生长了石墨烯纳米片,制备出掺杂BN_x-石墨烯三维纳米复合材料。一系列表征结果说明合成的纳米复合材料由C和O共掺杂的BN_x纳米棒和石墨烯纳米片组成,其形成与碳氢基团的转换和掺杂BN_x纳米棒的形变在石墨烯纳米片中产生的应力有关。室温发光性能表明石墨烯纳米片对掺杂BN_x纳米棒的紫外光和绿光有明显的猝灭作用,起源于掺杂BN_x-石墨烯界面上的电荷转移和电子散射。     

二硫化钼/石墨烯异质结的界面结合作用及其对带边电位影响的理论研究

采用基于色散修正的平面波超软赝势方法研究了二硫化钼/石墨烯异质结的界面结合作用及其对电荷分布和带边电位的影响.研究表明二硫化钼与石墨烯之间可以形成范德瓦耳斯力结合的稳定堆叠结构.通过能带结构计算,发现二硫化钼与石墨烯的耦合导致二硫化钼成为n型半导体,石墨烯转变成小带隙的p型体系.并通过电子密度差分图证实了界面内二硫化钼附近聚集负电荷,石墨烯附近聚集正电荷,界面内形成的内建电场可以抑制光生电子-空穴对的复合.石墨烯的引入可以调制二硫化钼的能带,使其导带底上移至-0.31 eV,提高了光生电子还原能力,有利于光催化还原反应.     

多层石墨烯的表面起伏的分子动力学模拟

运用经典分子动力学方法,研究了呈现不同堆积方式的多层石墨烯在不同温度下的表面起伏,并且和单层、双层石墨烯做对比,计算发现:室温下,多层石墨烯中存在着横向特征尺寸约为100 A的起伏,该尺寸会随着温度的升高而增大;同时,起伏的高度也随着温度的升高而增大,这些石墨烯的层内起伏高度关联函数都遵从幂指数标度行为G_h(q)αq~(-α),对于同一种石墨烯,温度越高幂指数越小;而在同一温度下,不同堆积方式的石墨烯的幂指数也不同,所有这些特征都来源于温度以及层间耦合作用引起的非谐效应。     

表面预处理对石墨烯上范德瓦耳斯外延生长GaN材料的影响

基于范德瓦耳斯外延生长的氮化镓/石墨烯材料异质生长界面仅靠较弱的范德瓦耳斯力束缚,具有低位错、易剥离等优势,近年来引起了人们的广泛关注.采用NH_3/H_2混合气体对石墨烯表面进行预处理,研究了不同NH_3/H_2比对石墨烯表面形貌、拉曼散射的影响,探讨了石墨烯在NH_3和H_2混合气氛下的表面预处理机制,最后在石墨烯上外延生长了1.6μm厚的GaN薄膜材料.实验结果表明:石墨烯中褶皱处的C原子更容易与气体发生刻蚀反应,刻蚀方向沿着褶皱进行;适当NH_3/H_2比的混合气体对石墨烯进行表面预处理可有效改善石墨烯上GaN材料的晶体质量.本研究提供了一种可有效提高GaN晶体质量的石墨烯表面预处理方法,可为进一步研究二维材料上高质量的GaN外延生长提供参考.     

太赫兹波段介质微腔光学特性研究

采用匀胶法制备了厚度在微米量级的 Si/[TiO₂/Al₂O₃]²TiO₂和Si/[TiO₂/MgO]²/TiO₂ 多层介质膜反射镜. 采用太赫兹(THz)时域透射光谱系统获得了多层膜的时域透射谱. 用传输矩阵法模拟了Si/[TiO₂/Al₂O₃]²TiO₂ 和Si/[TiO₂/MgO]²/TiO₂两种分布式布拉格反射镜 (DBR)的反射相移和相位穿透深度等光学特性. 设计了两种结构为 DBR/LT-GaAs/DBR的对称THz光学微腔结构并模拟了腔结构的辐射光谱. 结果表明:通过引入谐振腔, 两种DBR组成的微腔器件在谐振波长处的强度分别提高了19和14倍. 其中Si/[TiO₂/Al₂O₃]²TiO₂/LT-GaAs (12 μm)/ [TiO₂/Al₂O₃]²TiO₂腔的辐射光谱存在两个峰, 分别位于208和248 μm, 并分析了出现两个谐振峰的原因. 探讨了通过引入介质谐振腔实现对THz源的辐射特性进行调控的可行性. 关键词： 分布式布拉格反射镜 光子晶体 穿透深度 太赫兹微腔     

K5Bi(MoO4)4-Nd3+晶体生长和光学性质

在化学计量的熔料里,用提拉法生长了K₅Bi_0.9Nd_0.1(MoO₄)₄和K₅Bi_0.97Nd_0.03(MoO₄)₄单晶。该晶体属于三方晶系,空间群为R3m,Z=1.5,晶胞常数为a=6.023?,c=20.887?(Nd_0.1)。K₅Bi(Mo 关键词：     

石墨烯超快动态光学性质

通过建立石墨烯的光学布洛赫方程, 研究了弱光场下的单层石墨烯超快动态光学性质. 理论研究表明在太赫兹辐射光场下由于泡利不相容和能量守恒原理使得石墨烯系统建立动态非平衡载流子并达到饱和的时间是20–200 fs, 能够在1 ps之内迅速产生光电流. 研究发现√2ev_F E₀ t<0 和ω 分别对应入射光的强度和频率, t为时间, v_F是石墨烯狄拉克点附近电子的费米速度. 研究发现光子能量?ω越大, 电极化强度以及光电流越强. 我们的理论研究结果与已有的众多实验结果一致, 表明石墨烯在超快动态光学领域尤其是太赫兹领域拥有重要的研究和应用价值.     

K5Bi0.9Er0.1(MoO4)4的晶体生长和光学性质

在化学计量的熔料里,用提拉法生长了K₅Bi_0.9Er_0.1(MoO₄)₄单晶。该晶体属于三方晶系,空间群为R3m,z=1.5,晶胞参数为a=6.029?,c=20.823?(六方表示)。晶体具有层状结构,沿着(0001)面容易解理。晶体在室温下的吸收光谱包括有若干条吸收带,它们是稀土离子所特有的。其中三个主要的吸收峰分别相当于从Er³⁺离子的基态 ⁴I_15/2向 ⁴G_11/2, ²H_11/2和 ⁴I_13/2能级的跃迁。本文还给出晶体中相当于 ⁴I_13/2→ ⁴I_15/2跃迁的荧光发射光谱。 关键词：     

基于导模共振效应提高石墨烯表面等离子体的局域特性

本文构建了一种包含石墨烯和亚波长光栅的复合结构, 借助衍射光栅的导模共振效应, 在石墨烯表面激发高局域性表面等离子体激元, 研究了石墨烯与光栅结构对表面等离子体激元局域特性的影响规律, 并借助基于有限元法的COMSOL软件, 分析了缓冲层厚度、光栅周期、载流子迁移率和费米能级对石墨烯的表面电场、品质因子Q和有效模式面积S_eff的影响. 结果表明, 石墨烯表面等离子体激元的局域性在特定的参数点获得显著提高: 当μ = 0.7 m²/(V·s)时, 品质因子达到最大值Q_max = 1793; 当p = 235 nm或E_F = 0.72 eV时, 表面电场达到了入射光的3000倍以上. 强烈的局域性导致强烈 的光-物质相互作用, 因而本文提出的复合结构可实现高灵敏度传感器和高效率的非线性光学设备, 极大地扩展了石墨烯在纳米光学领域中的应用.     

A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p–n junction

The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,respectively.The time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.     

Wideband switchable dual-functional terahertz polarization converter based on vanadium dioxide-assisted metasurface

The terahertz technology has attracted considerable attention because of its potential applications in various fields.However,the research of functional devices,including polarization converters,remains a major demand for practical applications.In this work,a reflective dual-functional terahertz metadevice is presented,which combines two different polarization conversions through using a switchable metasurface.Different functions can be achieved because of the insulator-to-metal transition of vanadium dioxide(VO₂).At room temperature,the metadevice can be regarded as a linear-to-linear polarization convertor containing a gold circular split-ring resonator(CSRR),first polyimide(PI)spacer,continuous VO₂ film,second PI spacer,and gold substrate.The converter possesses a polarization conversion ratio higher than 0.9 and a bandwidth ratio of 81%in a range from 0.912 THz to 2.146 THz.When the temperature is above the insulator-to-metal transition temperature(approximately 68℃)and VO₂ becomes a metal,the metasurface transforms into a wideband linear-to-circular polarization converter composed of the gold CSRR,first PI layer,and continuous VO₂ film.The ellipticity is close to-1,while the axis ratio is lower than 3 dB in a range of 1.07 THz-1.67 THz.The metadevice also achieves a large angle tolerance and large manufacturing tolerance.     

石墨烯封装单层二硫化钼的热稳定性研究

将单层二硫化钼用石墨烯进行封装,构造了石墨烯和二硫化钼的范德瓦耳斯异质结构,并且分别在氩气（Ar）和氢气（H₂）氛围下,详细研究了被封装的二硫化钼的热稳定性.结果表明：在氩气氛围中,石墨烯封装的二硫化钼在400–1000℃下一直保持稳定,而石墨烯和氧化硅上裸露的二硫化钼在1000℃时几乎全部分解;在氢气氛围中,石墨烯封装的二硫化钼在400–1000℃下一直稳定存在,而石墨烯和氧化硅上裸露的二硫化钼在800℃下已经完全分解.综上可得,在氩气和氢气的氛围下,被石墨烯封装的二硫化钼的热稳定性得到了显著的提高.该研究通过用石墨烯将单层的二硫化钼进行封装以提高其热稳定性,在未来以单层二硫化钼作为基础材料的电子器件中,可以保证其在高温下能够正常工作.该研究也为提高其他二维材料的热稳定性提供了一种可行的方法和思路.     

基于VO2薄膜相变原理的温控太赫兹超材料调制器

利用二氧化钒薄膜绝缘相–金属相的相变特性, 提出了一种基于超材料的温控太赫兹调制器, 研究了相变超材料在太赫兹波段的传输特性和温控可调谐特性. 当入射太赫兹波为水平偏振或垂直偏振状态时, 器件的透过率谱线在1 THz附近呈现出两个独立的、中心频率分别为1.3 THz和1.7 THz、 带宽分别为0.2 THz和0.35 THz的 透射宽带. 当温度从40℃至80℃变化时, 两宽带的透过率发生明显的降低, 在二氧化钒的相变温度(68℃)时尤其灵敏, 对入射光的二种偏振状态, 调制深度均达到60%以上, 实现了良好的调制效果. 关键词： 太赫兹超材料 2薄膜')" href="#">VO₂薄膜 调制器 相变     

钒掺杂W18O49纳米线的室温p型电导与NO2敏感性能

钨氧化物纳米线在高灵敏度低功耗气体传感器中极具应用潜力, 且通过掺杂改性可进一步显著改善其敏感性能. 本文以WCl₆为钨源, NH₄VO₃为掺杂剂, 采用溶剂热法合成了钒掺杂的W₁₈O₄₉纳米线. 利用扫描电镜、透射电镜、X射线衍射、X射线光电子能谱仪表征了纳米线的微结构, 并利用静态气敏性能测试系统评价了掺杂纳米线的NO₂敏感性能. 研究结果表明: 五价钒离子受主掺杂进入氧化钨晶格结构, 抑制了纳米线沿轴向的生长并导致了纳米线束的二次集聚; 室温下, 钒掺杂W₁₈O₄₉纳米线接触NO₂气体后表现出反常的p型响应特性; 随工作温度逐渐升高至约110 ℃时, 发生从p型到n型的电导特性转变; 该掺杂纳米线气敏元件对浓度低至80 ppb (1 ppb=10^-9) 的NO₂气体具有明显的室温敏感响应和良好的响应稳定性. 分析并探讨了钒掺杂W₁₈O₄₉纳米线的高室温敏感特性及其p-n电导转型机理, 认为钒掺杂W₁₈O₄₉纳米线在室温下的良好敏感响应及反常p型导电性与掺杂纳米线表面高密度非稳表面态诱导的低温气体强吸附有关. 关键词： 氧化钨 纳米线 气体传感器 室温灵敏度     

Crystal growth,spectral properties and Judd–Ofelt analysis of Pr: CaF_2-YF_3

The 0.6 at.% Pr~(3+)-doped CaF_2-YF_3 crystal was successfully grown by the temperature gradient technique(TGT).X-ray diffraction analysis showed that the grown crystal still had cubic structure. The absorption spectrum, emission spectrum, Judd–Ofelt analysis and fluorescence decay curve at room temperature were discussed. The fluorescence lifetime of Pr: CaF_2-YF_3 crystal was 45.46 μs, and the σem ·τ of ~3P_0→~3H_6 and ~3P_0→~3F_2 transitions were calculated to be 80.92 × 10~(-20) cm~2·μs and 388.7 × 10~(-20) cm~2·μs, respectively. The FWHMs are 20.1 nm and 6.8 nm, which are higher than those of Pr: LiYF_4, Pr:LiLuF_4, Pr: LiGdF_4 and Pr: BaY_2F_8 crystals. The results show that the Pr: CaF_2-YF_3 crystal is expected to achieve 605 nm orange light and 642 nm red light laser operation.     

Relativistic graphene ratchet on semidisk Galton board

Using extensive Monte Carlo simulations we study numerically and analytically a photogalvanic effect, or ratchet, of directed electron transport induced by a microwave radiation on a semidisk Galton board of antidots in graphene. A comparison between usual two-dimensional electron gas (2DEG) and electrons in graphene shows that ratchet currents are comparable at very low temperatures. However, a large mean free path in graphene should allow to have a strong ratchet transport at room temperatures. Also in graphene the ratchet transport emerges even for unpolarized radiation. These properties open promising possibilities for room temperature graphene based sensitive photogalvanic detectors of microwave and terahertz radiation.     

Effect of electrical contact on performance of WSe2 field effect transistors

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) such as tungsten diselenide (WSe₂) have spead many interesting physical properties, which may become ideal candidates to develop new generation electronic and optoelectronic devices. In order to reveal essential features of 2D TMDCs, it is necessary to fabricate high-quality devices with reliable electrical contact. We systematically analyze the effect of graphene and metal contacts on performance of multi-layered WSe₂ field effect transistors (FETs). The temperature-dependent transport characteristics of both devices are tested. Only graphene-contacted WSe₂ FETs are observed with the metal-insulator transition phenomenon which mainly attributes to the ultra-clean contact interface and lowered contact barrier. Further characterization on contact barrier demonstrates that graphene contact enables lower contact barrier with WSe₂ than metal contact, since the Fermi level of graphene can be modulated by the gate bias to match the Fermi level of the channel material. We also analyze the carrier mobility of both devices under different temperatures, revealing that graphene contact can reduce the charge scattering of the device caused by ionized impurities and phonon vibrations in low and room temperature regions, respectively. This work is expected to provide reference for fabricating 2D material devices with decent performances.