光电协同增强的场效应对LaAlO_3/SrTiO_3界面中持续光电导的调控

LaAlO_3/SrTiO_3异质结界面体系具有新奇的二维自由电子气现象、暂态光电导效应、持续光电导效应等丰富的光电性质,是近年来科学界研究的热点之一.本文研究了场效应对LaAlO_3/SrTiO_3界面光电导效应的调控,发现光电协同增强的场效应可以使得LaAlO_3/SrTiO_3界面产生显著的持续光电导效应,进一步研究发现:在光电协同效应的影响下,随着负的背栅门电压的增加,持续光电导的数值增大,在-70 V附近达到极值;随着负的背栅门电压处理时间的增加,持续光电导的数值单调增加.LaAlO_3/SrTiO_3异质结中这种场增强的持续光电导效应可为多参数可调的光电子记忆器件的研发提供参考依据.     

AlGaN/GaN量子阱中子带的Rashba自旋劈裂和子带间自旋轨道耦合作用研究

首先把本征值方程投影到导带的子空间中, 进而得到AlGaN/GaN量子阱中第一、二子带的Rashba自旋劈裂系数(α ₁, α ₂)和子带间自旋-轨道耦合系数η₁₂. 然后自恰求解薛定谔方程和泊松方程计算了不同栅压的量子阱中的α ₁, α ₂和η₁₂, 并分别讨论了量子阱阱层、左右异质结界面和垒层对它们的贡献. 结果表明可以通过栅压来调节自旋-轨道耦合系数, 子带间自旋轨道耦合系数η₁₂比Rashba自旋劈裂系数α ₁, α ₂小, 但基本在同一数量级.     

掺铌SrTiO_3中的逆自旋霍尔效应

采用磁控溅射法在未掺杂和掺杂的SrTiO_3基片上沉积了NiFe薄膜,通过翻转测试法分离出掺杂样品中的自旋整流电压和逆自旋霍尔电压.研究结果表明:在未掺杂的SrTiO_3基片中,翻转前后测试的电压曲线基本一致,为NiFe薄膜自旋整流效应产生的电压.对于掺Nb浓度x为0.028, 0.05, 0.1, 0.15, 0.2的SrTiO_3基片,分离出的逆自旋霍尔电压随掺杂浓度增加而减小,在掺杂浓度为0.15和0.2的样品中没有探测到明显的逆自旋霍尔电压.本文的结果表明,在SrTiO_3中掺入强自旋轨道耦合的杂质,通过掺杂浓度可以实现对SrTiO_3中逆自旋霍尔效应的调控,这类可调控的自旋相关研究为自旋电子器件的研究和开发提供了更多的可能性,具有很大的潜在应用价值.     

不同组分厚度比的LaMnO3/SrTiO3异质界面电子结构和磁性的第一性原理研究

基于密度泛函理论的第一性原理计算, 研究了(LaMnO₃)_n/(SrTiO₃)_m(LMO/STO)异质界面的离子弛豫、电子结构和磁性质. 研究表明, 不同组分厚度比及界面类型时, 离子弛豫程度各不相同, 并且界面处的电子性质受此影响较大. 对于n型界面, 当LMO的厚度达到6个单胞层后, 电子会从LMO转移到STO, 转移的电子占据界面层Ti原子的3d电子轨道, 界面处出现二维电子气. 对于n型界面(LMO)_n/(STO)₂, 随着LMO厚度数n的增加, 由离子弛豫造成的结构畸变减小, 而界面处Ti原子周围电子的态密度和自旋极化却增大, 表明高厚度比的n型界面有利于产生高迁移率的二维电子气和自旋极化. 而对于p型(LMO)₂/(STO)₈界面, 在STO一侧基本没有结构畸变, 界面处无电子转移和自旋极化现象. 通过计算平均静电势发现n型和p型界面处的势差大小相差2 eV, 解释了p型界面不容易发生电荷转移的原因.     

Al_2O_3薄层修饰SiN_x绝缘层的IGZO-TFTs器件的性能研究

采用原子层沉积工艺(ALD)生长均匀致密的三氧化二铝(Al2O3)薄层对氮化硅(Si Nx)绝缘层进行修饰,研究了铟镓锌氧薄膜晶体管(IGZO-TFTs)器件的性能。当Al2O3修饰层厚度为4 nm时,绝缘层-有源层界面的最大缺陷态密度相比于未修饰器件降低了17.2%,器件性能得到显著改善。场效应迁移率由1.19 cm2/(V·s)提高到7.11 cm2/(V·s),阈值电压由39.70 V降低到25.37 V,1 h正向偏压应力下的阈值电压漂移量由2.19 V减小到1.41 V。     

负带隙HgCdTe体材料的磁输运特性研究

通过单晶生长了Cd组分为0.1的p型HgCdTe体材料,并制备了具有倒置型能带序的HgCdTe场效应器件.通过磁输运测试,在负带隙HgCdTe体材料中观察到明显的量子霍尔平台效应和Shubnikov-de Haas(SdH)振荡效应,证明样品具有较好的质量.利用SdH振荡对1/B关系的快速傅里叶变换,得到了样品的零场自旋分裂能约为26.55 meV,证明样品中存在强自旋-轨道耦合作用.进一步分析SdH中的拍频节点估算了样品中的有效g因子约为–11.54.     

基于原位等离子体氮化及低压化学气相沉积-Si_3N_4栅介质的高性能AlGaN/GaN MIS-HEMTs器件的研究

通过对低压化学气相沉积(LPCVD)系统进行改造,实现在沉积Si_3N_4薄膜前的原位等离子体氮化处理,氮等离子体可以有效地降低器件界面处的氧含量和悬挂键,从而获得了较低的LPCVD-Si_3N_4/GaN界面态,通过这种技术制作的MIS-HEMTs器件,在扫描栅压范围V_(G-sweep)=(-30 V,+24 V)时,阈值回滞为186 mV,据我们所知为目前高扫描栅压V_(G+)(20 V)下的最好结果.动态测试表明,在400 V关态应力下,器件的导通电阻仅仅上升1.36倍(关态到开态的时间间隔为100μs).     

Rashba自旋-轨道相互作用影响下量子盘中强耦合磁极化子性质的研究

本文基于Lee-Low-Pines幺正变换法,采用Tokuda改进的线性组合算符法研究了Rashba自旋-轨道相互作用效应下量子盘中强耦合磁极化子的性质.结果表明,磁极化子的相互作用能Eint的取值随量子盘横向受限强度ω0、外磁场的回旋频率ωc、电子-LO声子耦合强度α和量子盘厚度L的变化均与磁极化子的状态性质密切相关;磁极化子的平均声子数N随ωc,ω0和α的增加而增大,随L的增加而振荡减小;在Rashba自旋-轨道相互作用效应影响下磁极化子的有效质量将劈裂为m*+,m*-两种,它们随ωc,ω0和α的增加而增大,随L的增加而振荡减小;在研究量子盘中磁极化子问题时,电子-LO声子耦合和Rashba自旋-轨道相互作用效应的影响不可忽略,但Rashba自旋-轨道相互作用和极化子效应对磁极化子的影响只有在电子运动的速率较慢时显著.     

Energy Spectra,g Factors and Their Pressure—induced and ／or Thermal Shifts of SrTiO3：Cr^3＋ and SrTiO3：Mn^4＋ Ⅱ：Pressure Effects on Ground_State g Factor and Splittings of t2^32E and t2^34A2 of Sr

By using the wavefunctions obtained from diagonalizing the complete d^3 energy matrix at normal and various pressures,the g factor of the ground state of SrTiO3:Cr^3 and its pressure-induced shift have been microscopically calculated.Only by taking the local strains around Cr^3 in SrTiO3:Cr^3 (which are about twice the bulk ones)and corresponding P-χ dependence,can we obtain a good agreement etween the calculated result of pressure-induced shift of ground-state g factor and the experimental one.The physical origins of this pressure-induced shift have been explained.It is found that the change of Dq^-1 with pressure makes main contribution to the pressure-induced shift of ground-state g factor of SrTiO3:Cr^3 .By using the wavefunctions obtained from diagonalizing the complete d^3 energy matrix at normal pressure,the relevant matrix elements and accordingly strain-induced splittings of t2^32E and t2^34A2 of SrTiO3:Cr^3 have been calculated.The important results of Yc.Zc,Pc and Qc have also been evaluated.It is the admixtures of basic wavefunctions resulted from the spin-orbit interaction and /or Coulomb interaction and /or Kramers degeneracy that make the strain-induced splittings of the levels nonzero.It is found that there are nonvanishing matrix elements of operators T2ξ between wavefuncgtions with positive Ms and those with negative Ms′ and those with negative ms′,which have important effects on the strain-induced splittings of the levels.     

应力下SmNiO_3钙钛矿氧化物薄膜材料的电导与红外光电导

稀土镍基钙钛矿氧化物RNiO_3(R为稀土元素)可以在温度触发下发生从电子游离态到局域态的金属绝缘体转变,这一特性在传感器,数据存储,调制开关等方面具有可观的应用价值.本文通过脉冲激光沉积法,在钛酸锶(SrTiO_3)、铝酸镧(LaAlO_3)单晶衬底上准外延生长热力学亚稳态镍酸钐(SmNiO_3)薄膜材料,利用薄膜与衬底间晶格失配引入界面应力,实现对SmNiO_3电子轨道结构与金属绝缘体相变温度的调节.结合电输运性质与红外透射实验的综合表征研究,论证了双向拉伸应变引起的晶格双向拉伸畸变,可以引起SmNiO_3的禁带宽度的展宽,从而稳定绝缘体相并提高金属-绝缘相转变温度.进一步结合近边吸收同步辐射实验表征,揭示了拉伸应变稳定SmNiO_3绝缘体相的本质在于Ni—O成键轨道在双向拉伸形变作用下的弱化,使得镍氧八面体中的价电子偏离镍原子从而稳定SmNiO_3的低镍价态绝缘体相.     

单晶金刚石氢终端场效应晶体管特性

基于微波等离子体化学气相淀积生长的单晶金刚石制作了栅长为2μm的耗尽型氢终端金刚石场效应晶体管,并对器件特性进行了分析.器件的饱和漏电流在栅压为-6 V时达到了96 mA/mm,但是在-6 V时栅泄漏电流过大.在-3.5 V的安全工作栅压下,饱和漏电流达到了77 mA/mm.在器件的饱和区,宽5.9 V的栅电压范围内,跨导随着栅电压的增加而近线性增大到30 mS/mm.通过对器件导通电阻和电容-电压特性的分析,氢终端单晶金刚石的二维空穴气浓度达到了1.99×10~(13)cm~(-2),并且迁移率和载流子浓度均随着栅压向正偏方向的移动而逐渐增大.分析认为,沟道中高密度的载流子、大的栅电容以及迁移率的逐渐增加是引起跨导在很大的栅压范围内近线性增加的原因.     

Study of scanning tunneling microscopy images and probable relaxations of the SrTiO3(100) surface by electronic structure calculations

Partial electron density plots were calculated for a model SrTiO₃(100) surface with √5 × √5 ordered oxygen vacancy to examine why the bright spots of the scanning tunneling microscopy (STM) images of SrTiO₃(100) observed in ultrahigh vacuum (UHV) correspond to the oxygen vacancy sites. Possible dependence of the image on the polarity and magnitude of the bias voltage was also discussed on the basis of partial electron density plot calculations. Our study strongly suggests that the UHV STM imaging involves the lowest-lying d-block level of every two Ti³⁺ centers adjacent to an oxygen vacancy, the tip-sample distance involved in the UHV STM experiments is substantially larger than that involved in typical ambient-condition STM imaging, and the Ti⁴⁺ and Ti³⁺ sites of SrTiO₃(100) are reconstructed.     

Conductivity anisotropy in directionally solidified CaZrO3---CaSZ and MgO-MgSZ eutectics

The results of the impedance spectroscopy measurements on eutectic samples based on zirconium oxide are presented here. Samples of CaZrO₃---ZrO₂(cubic) and MgO---ZrO₂(cubic) have been grown by a directional solidification procedure such that the different phases appear nearly oriented along the growth direction (lamellae in the system of CaZrO₃-ZrO₂(cubic) and fibers of MgO in a ZrO₂ matrix in the other system). The DC electrical conductivity has been measured by impedance spectroscopy along and across the growth axis. For CaZrO₃---ZrO₂ the coductivity is clearly anisotropic. The following values for σT have been obtained: the conductivity at 600 °C equals 2.0 × 10⁻⁶ Ω⁻¹ cm⁻¹ perpendicular to the fiber axis and 1.4 × 10⁻⁵ Ω⁻¹ cm⁻¹ parallel to it and with an activation energy of 1.3 eV for σT. For MgO---ZrO₂(cubic) the isotropic value of the conductivity at 600 °C is 10⁻⁴ Ω⁻¹ cm⁻¹ with activation energy for σT of 1.5 eV. The anisotropic conductivity in the CaZrO₃---ZrO₂ (cubic) system has been explained by a model of an ordered stacking of oxygen conducting (cubic ZrO₂) and non-conducting (CaZrO₃ or MgO) phases.     

PVA栅绝缘层浓度对P3HT有机场效应晶体管性能的影响

采用溶液制备法制备了用PVA作为绝缘层、P3HT作为有源层的有机场效应晶体管,,研究了不同浓度PVA栅绝缘层对器件性能的影响。实验结果显示,以质量分数为8%的PVA溶液制备的栅绝缘层具有最好的性能,器件的场效应迁移率为0.31 cm²·V^-1·s^-1,阈值电压为-6 V。进一步分析了PVA栅绝缘层浓度对器件性能提高的原因,结果表明,对于制备溶液化的有机场效应晶体管,选取合适的PVA栅绝缘层浓度非常重要。     

First-principles study of electronic structure and magnetic properties of SrTi1−xMxO3 (M= Cr,Mn, Fe,Co, or Ni)

We used first-principles calculations to conduct a comparative study of the structure and the electronic and magnetic properties of SrTiO₃ doped with a transition metal (TM), namely, Cr, Mn, Fe, Co, or Ni. The calculated formation energies indicate that compared with Sr, Ti can be substituted more easily by the TM ions. The band structures show that SrTi_0.875Cr_0.125O₃ and SrTi_0.875Co_0.125O₃ are half metals, SrTi_0.875Fe_0.125O₃ is a metal, and SrTi_0.875Mn_0.125O₃ is a semiconductor. The 3d TM-doped SrTiO₃ exhibits various magnetic properties, ranging from ferromagnetism (Cr-, Fe-, and Co-doped SrTiO₃) to antiferromagnetism (Mn-doped SrTiO₃) and nonmagnetism (Ni-doped SrTiO₃). The total magnetic moments are 4.0_μB, 6.23_μB, and 2.0_μB for SrTi_0.75Cr_0.25O₃, SrTi_0.75Fe_0.25O₃, and SrTi_0.75Co_0.25O₃, respectively. Room-temperature ferromagnetism can be expected in Cr-, Fe-, and Co-doped SrTiO₃, which agrees with the experimental observations. The electronic structure calculations show that the spin polarizations of the 3d states of the TM atoms are responsible for the ferromagnetism in these compounds. The magnetism of TM-doped SrTiO₃ is explained by the hybridization between the TM-3d states and the O-2p states.     

Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology

Three-dimensional(3D)vertical architecture transistors represent an important technological pursuit,which have distinct advantages in device integration density,operation speed,and power consumption.However,the fabrication processes of such 3D devices are complex,especially in the interconnection of electrodes.In this paper,we present a novel method which combines suspended electrodes and focused ion beam(FIB)technology to greatly simplify the electrodes interconnection in 3D devices.Based on this method,we fabricate 3D vertical core-double shell structure transistors with ZnO channel and Al₂O₃ gate-oxide both grown by atomic layer deposition.Suspended top electrodes of vertical architecture could be directly connected to planar electrodes by FIB deposited Pt nanowires,which avoid cumbersome steps in the traditional 3D structure fabrication technology.Both single pillar and arrays devices show well behaved transfer characteristics with an Ion/Ioff current ratio greater than 106 and a low threshold voltage around 0 V.The ON-current of the 2×2 pillars vertical channel transistor was 1.2μA at the gate voltage of 3 V and drain voltage of 2 V,which can be also improved by increasing the number of pillars.Our method for fabricating vertical architecture transistors can be promising for device applications with high integration density and low power consumption.     

Er3+,Yb3+共掺杂SrTiO3超细粉末的可见上转换发光

钛酸锶(SrTiO₃)具有高介电常数、良好的绝缘性质、优良的物理化学稳定性和在可见光范围内的优异的透明度等优点,是一种重要的无机功能材料。近年来,Al³⁺,Ga³⁺等离子共掺杂的SrTiO₃:Pr³⁺做为一种优异的红色场发射显示(FED)荧光粉引起了人们的兴趣。另外,SrTiO₃具有相对较小的声子频率,因而它可以作为一种有利于上转换发光的基质材料。以NaCl为助熔剂制备了Er³⁺,Yb³⁺共掺杂的SrTiO₃超细粉末。在980nm激发下,样品发出很强的来自于Er³⁺离子的²H_11/2→⁴I_15/2,⁴S_3/2→⁴I_15/2(绿光)和⁴F_9/2→⁴I_15/2(红光)跃迁的上转换发光。Yb³⁺离子的共掺杂对Er³⁺离子的上转换发光起明显的增强作用。研究了上转换发光强度与稀土离子浓度以及激发光强度之间的依赖关系,表明在Er³⁺单掺杂和Er³⁺,Yb³⁺共掺杂的样品中,绿光和红光都是被双光子激发过程激发的。还对上转换发光的机理做了初步分析。     

Ferroelectric effect and equivalent polarization charge model of PbZr_(0.2)Ti_(0.8)O_3 on AlGaN/GaN MIS-HEMT

PbZr_(0.2)Ti_(0.8)O_3(PZT) gate insulator with the thickness of 30 nm is grown by pulsed laser deposition(PLD) in AlGa N/Ga N metal–insulator–semiconductor high electron mobility transistors(MIS-HEMTs). The ferroelectric effect of PZT Al Ga N/Ga N MIS-HEMT is demonstrated. The polarization charge in PZT varies with different gate voltages. The equivalent polarization charge model(EPCM) is proposed for calculating the polarization charge and the concentration of two-dimensional electron gas(2 DEG). The threshold voltage(Vth) and output current density(IDS) can also be obtained by the EPCM. The theoretical values are in good agreement with the experimental results and the model can provide a guide for the design of the PZT MIS-HEMT. The polarization charges of PZT can be modulated by different gate-voltage stresses and the Vthhas a regulation range of 4.0 V. The polarization charge changes after the stress of gate voltage for several seconds. When the gate voltage is stable or changes at high frequency, the output characteristics and the current collapse of the device remain stable.     

沟道层厚度对室温制备的In2O3薄膜晶体管器件性能的影响

在室温下采用直流磁控溅射以SiO₂/Si为衬底制备了不同沟道层厚度的底栅式In₂O₃薄膜晶体管,讨论了沟道层厚度对底栅In₂O₃薄膜晶体管的电学性能的影响。实验结果表明:器件的特性与沟道层厚度有关,最优沟道层厚度的In₂O₃薄膜晶体管为增强型,其阈值电压为2.5 V,开关电流比约为10⁶,场效应迁移率为6.2 cm²·V^-1·s^-1。     

铌镁酸铅-钛酸铅铁电阴极电子发射特性

研究了铌镁酸铅-钛酸铅铁电材料的铁电、介电性能对阴极发射阈值电压的影响, 以及铁电阴极发射电流与激励脉冲电压和抽取电压之间的关系, 并分析了其发射机理. 结果表明, 室温介电常数高、极化强度变化量大的弛豫铁电体0.9Pb(Mg_1/3Nb_2/3)O₃-0.1PbTiO₃具有较小的发射阈值电压; 铁电阴极电子发射与快极化反转和等离子体的形成有关; 由极化反转所致电子发射的自发射电流随激励脉冲电压的增大呈幂律增长关系, 其发射电流开始于激励脉冲电压的下降沿; 在抽取电压较大时, 发射电流随抽取电压的增大呈线性增长关系, 说明大电流主要取决于抽取电压; 其发射电流开始于激励脉冲电压的上升沿, 与“三介点”处的场增强效应和等离子体的形成有关; 当抽取电压为2500 V 时, 得到的发射电流幅值为210 A, 相应的电流密度为447 A/cm².