壁面二次电子发射对霍尔推力器放电通道绝缘壁面双鞘特性的影响

为进一步揭示霍尔推力器放电通道绝缘壁面鞘层的特性, 利用考虑了壁面二次电子分布函数的一维稳态流体鞘层模型, 研究了壁面二次电子发射对近壁双鞘特性的影响. 分析结果表明, 由于壁面发射的二次电子对近壁鞘层中的电子密度有增加作用, 存在一个临界二次电子发射系数σ_dc使得: 当σ≤σ_dc时, 鞘层为单层的正离子鞘结构; 当σ>σ_dc时, 鞘层表现为双层的正离子鞘和电子鞘相连结构, 连接点对应于垂直于壁面方向上电势分布的拐点. 然而, 当σ进一步增大到0.999时, 鞘层转变为三层的正离子鞘-电子鞘-正离子鞘交替结构. 数值结果表明: 随着σ的增加, 电子鞘与离子鞘的连接点向远离壁面的方向移动, 电子鞘的厚度逐渐增加; 随着壁面出射电子能量系数a的增加, 近壁区鞘层的厚度也逐渐增加. 关键词： 霍尔推力器 双鞘 壁面二次电子发射     

电子温度各向异性对霍尔推力器BN绝缘壁面鞘层特性的影响

建立多价态多组分等离子体一维流体鞘层模型,引入电子温度各向异性系数并考虑出射电子速度分布,研究了电子温度各向异性对霍尔推力器中的BN绝缘壁面鞘层特性和近壁电子流的影响.分析结果表明,相比于纯一价氙等离子体鞘层参数,推力器中的多价态氙等离子体鞘层电势降略有降低,电子壁面损失增加,临界二次电子发射系数减小.推力器中的电子温度各向异性现象可以显著地加大出射电子能量系数,进而降低鞘层电势降,增强电子壁面相互作用.数值结果表明,空间电荷饱和机制下电子温度各向异性对鞘层空间电势分布影响显著. 关键词： 霍尔推力器 电子温度各向异性 空间电荷饱和鞘层     

霍尔推进器中磁化二次电子对鞘层特性的影响

为进一步研究霍尔推进器壁面二次电子发射对推进器性能的影响,采用流体模型数值模拟了二次电子磁化效应的等离子体鞘层特性.得到二次电子磁化鞘层的玻姆判据.讨论了不同的磁场强度和方向、二次电子发射系数以及不同种类等离子体推进器的鞘层结构.结果表明:随器壁二次电子发射系数的增大,鞘层中粒子密度增加,器壁电势升高,鞘层厚度减小;鞘层电势及粒子密度随着磁场强度和方位角的增加而增加;而对于不同种类的等离子体,壁面电势和鞘层厚度也不同.这为霍尔推进器的磁安特性实验提供了理论解释. 关键词： 霍尔推进器 磁鞘 二次电子     

霍尔推进器壁面材料二次电子发射及鞘层特性

霍尔推进器放电通道等离子体与壁面相互作用形成鞘层,不同壁面材料的二次电子发射对推进器鞘层特性具有重要影响,本文针对推进器壁面鞘层区域建立二维物理模型,研究了氮化硼(BN)、碳化硅(SiC)和三氧化二铝(Al_2O_3)三种不同壁面材料的二次电子发射特性,在改进SiC材料二次电子发射模型的基础上,采用粒子模拟方法,讨论了壁面二次电子发射系数与电子温度和磁场强度的关系,研究了三种材料(BN,SiC和Al_2O_3)的鞘层特性,结果表明:修正的二次电子发射模型拟合曲线与实验曲线几乎一致;在相同电子温度下,三种材料(BN,SiC和Al_2O_3)的二次电子发射系数和壁面电子数密度依次增大,而鞘层电场和鞘层电势降依次减小,BN材料具有合适的二次电子发生射系数,使得霍尔推进器能在低电流下稳态工作。     

电子的非广延分布对等离子体鞘层中二次电子发射的影响

采用一维流体模型研究了非广延分布电子对等离子体鞘层中二次电子发射的影响.通过数值模拟,研究了非广延分布电子对考虑二次电子发射的等离子体鞘层玻姆判据、器壁电势、器壁二次电子临界发射系数以及等离子体鞘层中二次电子密度分布的影响.研究结果发现,当电子分布偏离麦克斯韦分布(q=1,广延分布)时,非广延参量q的改变对器壁二次电子发射有着重要的影响.不论电子分布处于超广延(q 1),还是处于亚广延状态(q 1),随着非广延参量q的增加,都会出现鞘边临界马赫数跟着减小,同时对于随着二次电子发射系数的增加,临界马赫数跟着增加.器壁电势随着参量q的增加而增加.器壁二次电子临界发射系数则随着非广延参量的增加而减小,并且等离子体中所含的离子种类质量数越大,非广延参量的变化对器壁二次电子临界发射系数的值影响越小.此外,随着非广延参量的增加,鞘层厚度减小,鞘层中二次电子数密度增加.通过对数值模拟结果分析,发现电子分布处于超广延分布状态对等离子体鞘层中二次电子发射特性的影响要比电子处于亚广延分布状态要更明显.     

二次电子发射和负离子存在时的鞘层结构特性

 建立了包括电子、离子、器壁发射二次电子以及负离子多种成分的等离子体无碰撞鞘层的基本模型,讨论了二次电子发射和负离子对1维稳态等离子体鞘层结构的影响,并且分析了多种成分等离子体鞘层内的二次电子和负离子的相互作用。结果表明：二次电子发射系数的增加和负离子含量的增加,都将导致鞘层的厚度有所减小;二次电子发射系数超过临界发射系数之后,鞘层不再是离子鞘。随着器壁材料二次电子发射系数的增加,鞘层中的负离子密度分布也逐渐增加;负离子的增加,导致二次电子临界发射系数有所增加。另外,在等离子体鞘层中二次电子发射和负离子的存在,也影响着鞘层中电子的放电特性与器壁材料的腐蚀。     

电子温度对霍尔推进器等离子体鞘层特性的影响

采用二维粒子模拟方法研究了霍尔推进器通道中电子温度对等离子体鞘层特性的影响, 讨论了不同电子温度下电子数密度、鞘层电势、电场及二次电子发射系数的变化规律. 结果表明: 当电子温度较低时, 鞘层中电子数密度沿径向方向呈指数下降, 在近壁处达到最小值, 鞘层电势降和电场径向分量变化均较大, 壁面电势维持一稳定值不变, 鞘层稳定性好; 当电子温度较高时, 鞘层区内与鞘层边界处电子数密度基本相等, 而在近壁面窄区域内迅速增加, 壁面处达到最大值, 鞘层电势变化缓慢, 电势降和电场径向分量变化均较小, 壁面电势近似维持等幅振荡, 鞘层稳定性降低; 电子温度对电场轴向分量影响较小; 随电子温度的增大, 壁面二次电子发射系数先增大后减少. 关键词： 霍尔推进器 等离子体鞘层 电子温度 粒子模拟     

不同成分等离子体鞘层的玻姆判据

在一维平板鞘层中采用流体模型分别研究了不同成分无碰撞等离子体鞘层的玻姆判据.通过拟牛顿法数值模拟了含有电子、离子、负离子以及二次电子的等离子体鞘层玻姆判据.结果表明二次电子发射增加了鞘层离子马赫数的临界值,且器壁发射二次电子温度越高,离子马赫数临界值越小.负离子使离子马赫数临界值减小.而在含有二次电子和负离子的等离子体鞘层中,当负离子较少时,二次电子发射对离子马赫数临界值影响较大;当负离子增加时,离子马赫数的临界值则主要受负离子的影响. 关键词： 鞘层 等离子体 玻姆判据     

Hall推力器内饱和鞘层下电子与壁面碰撞频率特性

利用二维粒子模拟方法研究Hall推力器内电子与壁面的碰撞频率.研究发现,饱和鞘层状态下的电子与壁面的碰撞频率较经典鞘层下大大增加,甚至高出经典鞘层状态下电子与壁面碰撞频率两个数量级,这样饱和鞘层状态下电子与壁面的碰撞频率对近壁电流的贡献将不容忽略.进一步分析造成饱和鞘层状态下电子与壁面碰撞频率增加的原因后认为,饱和鞘层状态下电子与壁面碰撞频率的增加是鞘层电势降过低和壁面发射的二次电子回流造成的. 关键词： 饱和 鞘层 碰撞 频率     

电子非广延分布的多离子磁化等离子体鞘层特性

等离子体磁化鞘层在半导体加工、材料表面改性、薄膜沉积等方面都发挥着重要作用.在等离子体实验和放电应用中,常存在由两种以上离子组成的多离子等离子体;对于长程相互作用的等离子体系统,非麦克斯韦分布的电子可通过Tsallis的非广延分布来描述.本文针对多离子等离子体鞘层建立一维空间坐标三维速度坐标的流体模型,假设鞘层中电子速度服从非广延分布,本底氦离子和不同种类的杂质离子在有一定倾斜角度的磁场中被磁化,通过数值模拟探究了非广延参量、杂质离子及斜磁场对多离子磁鞘中离子的数密度、速度、壁面电势和离子动能等物理量的影响.结果表明,在氦氢或氦氩混合等离子体鞘层中,随着非广延参量增大,离子沿垂直壁方向的速度减小,鞘层中离子、电子数密度均减小,鞘层厚度减小,壁面处离子动能减小;当杂质离子浓度增大时,壁面处离子动能与离子种类无关.随着磁场强度的增大,氦离子数密度和沿垂直壁方向的速度在鞘边出现起伏,且波动幅度随着非广延参量的减小而增大,而重离子则无明显的波动.此外,还分析了杂质离子种类和浓度对鞘层相关特性的影响.     

Heat flow through a plasma sheath in the presence of secondary electron emission from plasma‐wall interaction

The formation of a plasma sheath in front of a negative wall emitting secondary electron is studied by a one‐dimensional fluid model. The model takes into account the effect of the ion temperature. With the secondary electron emission (SEE ) coefficient obtained by integrating over the Maxwellian electron velocity distribution for various materials such as Be, C, Mo, and W, it is found that the wall potential depends strongly on the ion temperature and the wall material. Before the occurrence of the space‐charge‐limited (SCL ) emission, the wall potential decreases with increasing ion temperature. The variation of the sheath potential caused by SEE affects the sheath energy transmission and impurity sputtering yield. If SEE is below SCL emission , the energy transmission coefficient always varies with the wall materials as a result of the effect of SEE , and it increases as the ion temperature is increased. By comparison of with and without SEE , it is found that sputtering yields have pronounced differences for low ion temperatures but are almost the same for high ion temperatures.     

One-dimensional solution to the stable, space-charge-limited emission of secondary electrons from plasma-wall interactions

Numerical solutions to the stable, space-charge-limited emission of secondary electrons from plasma-wall interaction are found based on one-dimensional plasma moment equations that assume cold ions, Maxwellian electrons and cold secondary electrons. The numerical method finds a range of plasma parameters that permit stable emission of secondary electrons in the absence of normal electric fields to the wall. These solutions were not obtained with previous method that solves only for the marginally stable plasma sheath. Range of the ion Mach number at the sheath edge, the floating wall potential relative to the plasmas, and secondary electron emission coefficients corresponding to the vanishing normal electric fields are found for hydrogen, argon and xenon plasmas. The results show that a relatively small range of secondary electron emission coefficient exists to allow stable sheaths structures along with larger ranges of ion injection speed at the sheath edge and floating potential of the emitting wall.     

Effects of Energetic Electrons on Collector and Source Potentials in a Finite Ion Temperature Plasma

Formation of the potential in a two-electron-temperature plasma region facing a floating collector was studied theoretically with a kinetic plasma-sheath model and by electrostatic particle simulation. The electrons were described by truncated full Maxwellian velocity distribution functions and the ions by an accelerated half-Maxwellian velocity distribution function. The collector potential and the plasma source sheath or presheath potential drop were evaluated as functions of the hot to cool electron temperature ratio and the hot electron density ratio using Vlasov and Poison equations. The results showed that the presheath potential drop varied continuously with electron composition ratio for lower values of the electron temperature ratio, while for higher values in a narrow composition ratio range, triple values of the potential were found. Of the two physically acceptable values, the lower was characterized by the cool electrons and the higher by the hot electrons. It is anticipated that a current-free double layer structure is formed in the plasma system between these two potential regions. The collector floating potential, as a function of electron composition ratio, is mainly dominated by the hot electrons, since already a small value of hot electron current is sufficient to compensate the ion saturation current. In order to complete the theoretical investigation we also study the hydrogen plasma system with the XPDP1 particule-in-cell simulation code composed at Berkeley. At certain plasma parameter values formation of a double layer structure was observed. The potential Values on the upper and lower side of the double layer, as well as that of the collector floating potential, corresponded very well to the calculated values. On the upper side the plasma was composed of ions, accelerated through the source sheath potential drop, and electrons consisting of cool full Maxwellian and hot truncated full Maxwellian populations. On the lower side only hot electrons and ions additionally accelerated through the double layer were found.     

Nonlinear collisional monte carlo simulations for high-temperature SOL plasma

A nonlinear Monte Carlo collisional model is applied to to investigate scrape-off layer (SOL) plasmas with high temperatures. In the proposed SOL modeling, A steady state SOL plasma, which satisfies the particle and energy balances and neutrality constraint, is determined in terms of total particle and heat fluxes across the separatrix, the edge plasma temperature, the secondary electron emission coefficient, and the SOL size. A conductive heat flux into the SOL is effectively modeled via random exchange of source particles and the SOL plasma particles. It is found that the potential drop and the electron transmission factor in the collisional SOL plasma are in good agreement with the theoretical prediction. The cooling effect of secondary electrons in the high temperature divertor operation is investigated. In such a collisionless plasma, the present nonlinear collision model is useful because the electron distribution function deviates far from a Maxwellian distribution. In the presence of strong secondary electron emission, the electron sheath energy transmission factor in the collisionless regime is found to be significantly smaller than that in the collisional regime. This fact suggests that a high-temperature divertor operation can be possible.     

Fluid Model of a Sheath Formed in Front of an Electron Emitting Electrode Immersed in a Plasma with Two Electron Temperatures

The formation of a sheath in front of a negatively biased electrode (collector) that emits electrons is studied by a one‐dimensional fluid model. Electron and ion emission coefficients are introduced in the model. It is assumed that the electrode is immersed in a plasma that contains energetic electrons. The electron velocity distribution function is assumed to be a sum of two Maxwellian distributions with two different temperatures, while the ions and the emitted electrons are assumed to be monoenergetic. The condition for zero electric field at the collector is derived. Using this equation the dependence of electron and ion critical emission coefficients on various parameters ‐ like the ratio between the hot and cool electron density, the ratio between hot and cool electron temperature and the initial velocity of secondary electrons ‐ is calculated for a floating collector. A modification of the Bohm criterion due to the presence of hot and emitted electrons is also given. The transition between space charge limited and temperature limited electron emission for a current‐carrying collector is also analyzed. The critical potential, where this transition occurs, is calculated as a function of several parameters like the Richardson emission current, the ratio between the hot and cool electron density, the ratio between hot and cool electron temperature and the initial velocity of secondary electrons. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Monte Carlo simulation of absolute secondary electron yield of Cu

A Monte Carlo simulation model of electron interaction with solids that includes cascade secondary electron production has been used to study secondary electron emission from Cu. An optical dielectric function was used to describe electron energy loss and the associated secondary electron excitation. From the simulation, the absolute primary energy dependence of the secondary yield and the energy distribution of secondary electrons has been obtained. We have compared the calculated true secondary yield and total secondary yield curves with experiment. Good agreement has been found only for those experiment data obtained in ultrahigh vacuum. PACS 79.20.Hx; 79.20.Ap; 02.70.Uu     

Floating Sheath Potentials in Non-Maxwellian Plasmas

The floating sheath potential in a plasma having a Maxwellian electron distribution function is e?>s = -kTe 1n (a/b)/2 where Te is the electron temperature, a is the ratio of electron temperature to ion temperature, and b is the ratio of electron mass to ion mass. This expression is derived by equating the flux of electrons and ions to a surface in the plasma. Only electrons initially having an energy greater than -e?s flow to the surface. These electrons are in the tail of the distribution, a region that differs significantly from a Maxwellian in many plasmas. An analysis is performed where the sheath potential is solved for using a two-temperature model for the electron distribution function. The two-temperature model accurately describes the distortion from a Maxwellian in the tail of the distribution function. The magnitude of the sheath potential calculated with the two-temperature distribution is significantly smaller than that obtained using a Maxwellian distribution, a result of the reduction in the relative abundance of energetic electrons in the tail of the distribution.     

高功率微波沿面闪络击穿机制粒子模拟

针对高功率微波介质沿面闪络击穿物理过程,首先建立了理论模型,包括:动力学方程、粒子模拟算法、二次电子发射, 以及电子与气体分子蒙特卡罗碰撞模型、电子碰撞介质表面退吸附气体分子机制;其次,基于理论模型,编制了1D3V PIC-MCC程序,分别针对真空二次电子倍增、高气压体电离击穿和低气压面电离击穿过程,运用该程序仔细研究了电子和离子随时间演化关系、电子运动轨迹、电子及离子密度分布、空间电荷场时空分布、电子平均能量、碰撞电子平均能量、碰撞电子数目随时间演化关系、电子能量分布函数、平均二次电子发射率以及能量转换关系。研究结果表明:真空二次电子倍增引发的介质表面沉积功率只能达到入射微波功率1%左右的水平,不足以击穿;气体碰撞电离主导的高气压体电离击穿,是由低能电子（eV量级）数目指数增长到一定程度导致的,形成位置远离介质表面,形成时间为s量级;低气压下的介质沿面闪络击穿,是在二次电子倍增和气体碰撞电离共同作用下,由于数目持续增长的高能电子（keV量级）碰撞介质沿面导致沉积功率激增而引发的,形成位置贴近介质沿面,形成时间在ns量级。