Growth and characterization of BaZnGa

Abstract

We report the growth, structure and characterization of BaZnGa, identifying it as the sole known ternary compound in the Ba–Zn–Ga system. Single crystals of BaZnGa can be grown out of excess Ba–Zn and adopt a tI36 structure type. There are three unique Ba sites and three M = Zn/Ga sites. Using DFT calculations we can argue that whereas one of these three M sites is probably solely occupied by Ga, the other two M sites, most likely, have mixed Zn/Ga occupancy. Temperature-dependent resistivity and magnetization measurements suggest that BaZnGa is a poor metal with no electronic or magnetic phase transitions between 1.8 and 300 K.     

Discrete Polynuclear Growth and Determinantal Processes

We consider a discrete polynuclear growth (PNG) process and prove a functional limit theorem for its convergence to the Airy process. This generalizes previous results by Prähofer and Spohn. The result enables us to express the F ₁ GOE Tracy- Widom distribution in terms of the Airy process. We also show some results, and give a conjecture, about the transversal fluctuations in a point to line last passage percolation problem. Furthermore we discuss a rather general class of measures given by products of determinants and show that these measures have determinantal correlation functions.     

Growth and mechanism of titania nanowires

Anatase and rutile-phase titania nanowires have been prepared via an efficient molten salt-assisted and novel pyrolysis route, respectively. The growth of anatase nanowires is parallel to [010] direction. The anatase titanium oxide nanowires are obtained by exchange reaction between Na₂TiO₃ and HCl, whereas the formation of rutile titania nanowires is conventional vapor-liquid-solid growth mechanism.     

纳米ZnO生长及性质分析

利用低压金属有机化学气相沉积(LP-MOCVD)技术,在表面含有ZnO颗粒作为催化剂的Si(111)衬底上制备了ZnO纳米柱阵列。采用X射线衍射(XRD)、喇曼光谱(Raman)、扫描电子显微镜(SEM)、光致发光(PL)谱分析了样品的晶体结构质量、表面性质和光学性质。结果表明,生长出来的纳米ZnO具有较好的c轴择优取向性。发现氧分压对ZnO纳米柱的生长有重要影响:当氧分压较低时,生长基于VLS机制;当氧分压较高时,生长基于VS机制;通过对N2O流量的控制可实现对ZnO纳米材料的可控生长。     

Growth Rates and Explosions in Sandpiles

We study the abelian sandpile growth model, where n particles are added at the origin on a stable background configuration in ? ^d . Any site with at least 2d particles then topples by sending one particle to each neighbor. We find that with constant background height h≤2d?2, the diameter of the set of sites that topple has order n ^1/d . This was previously known only for h<d. Our proof uses a strong form of the least action principle for sandpiles, and a novel method of background modification. We can extend this diameter bound to certain backgrounds in which an arbitrarily high fraction of sites have height 2d?1. On the other hand, we show that if the background height 2d?2 is augmented by 1 at an arbitrarily small fraction of sites chosen independently at random, then adding finitely many particles creates an explosion (a sandpile that never stabilizes).     

一步溶液法制备ZnO亚微米晶体棒及其发光性能

用硝酸锌(Zn(NO₃)₂·4H2O)或醋酸锌(Zn(CH₃COO)₂·2H2O)分别与六亚甲基四胺((CH₂)₆N₄)以等浓度0.005mol/L配制成两种反应溶液,通过化学溶液法在玻璃衬底上生长出ZnO六角型亚微米棒(长5~8μm,直径300~700nm)。测量了样品的XRD和扫描电镜像。经XRD分析,所得样品均为纤锌矿的ZnO六角型晶体。扫描电镜(SEM)像表明,生长时间为3h或5h时,样品为细长条的棒状结构,长径比超过10:1;生长48h后的ZnO亚微米棒的一端被腐蚀成一定深度的ZnO亚微米管。用负离子配位四面体生长模型分析了ZnO亚微米棒的生长机理。ZnO亚微米棒退火前后的光致发光谱表明,退火处理后的发射谱中的紫外峰消失,而红色发光峰红移并且增强(峰值由630nm左右移到710nm),同时它的激发光谱中的室温激子激发峰也增强。     

生长温度对立方MgZnO薄膜生长取向和紫外光吸收特性的影响

利用脉冲激光沉积技术在非晶石英衬底上制备立方结构MgZnO薄膜,并研究MgZnO薄膜结晶特性、光学带隙随生长温度的变化情况。当生长温度从150℃升高到700℃时,MgZnO薄膜的生长取向由（200）向（111）转变。在600℃以下,MgZnO薄膜光学带隙的变化规律与晶格中Mg和Zn原子比例的变化趋势是一致的;而当温度升至700℃时,虽然MgZnO晶格中Mg和Zn原子比例降低,但由于平均晶粒尺寸变大,薄膜的光学带隙反而上升。在300℃和700℃晶格匹配的情况下,获得了单一（200）和（111）取向的立方MgZnO薄膜。     

Growth by Ledges

The prediction and observation of growth ledges at various moving interphase boundaries in solid-solid phase transformations has become increasingly widespread since first proposed in the early 1960's by Aaronson. The role of steps at the growth interfaces in several phase transformations is reviewed. For precipitate plates emphasis is placed on rationalizing experimental growth kinetics with mathematical models developed for the migration rate of a ledge. More complex transformations are employed to examine the possible role of growth ledges to account for microstructure development. In all cases, the growth ledge is shown to be necessary to fully understand solid-solid phase transformations.     

Gelation and Cluster Growth with Cluster-Wall Interactions

Metallic cluster growth within a reactive polymer matrix is modeled by augmenting coagulation equations to include the influence of side reactions of metal atoms with the polymer matrix: where > 0 and where c _k denotes the concentration of the kth cluster and p denotes the concentration of reactive sites available within the polymer matrix for reaction with metallic atoms. The initial conditions are required to be non-negative and satisfy and p(0) = p ₀. We assume that for 01, which encompasses both bond linking kernels (R _jk = j k ) and surface reaction kernels (R _jk = j + k ). Our analytical and numerical results indicate that the side reactions delay gelation in some cases and inhibit gelation in others. We provide numerical evidence that gelation occurs for the classical coagulation equations ( = 0) with the bond linking kernel (d ) for 1/2<1. We examine the relative fraction of metal atoms, which coagulate compared to those which interact with the polymer matrix, and demonstrate in particular a linear dependence on ^–1 in the limiting case R _{= jk} , p ₀=1.     

Metropolis Dynamics Relaxation via Nucleation and Growth

We consider the Ising model with Metropolis dynamics on under a small positive external field h. We show that the relaxation time, i.e., the time it takes for the system to reach the (+)-phase starting from all spins -1, scales as as the temperature , where and is the energy of a “critical” droplet. The factor originates from droplet growth and is related to the dimension of the lattice, while the term (2-h) is related to the rate of growth of highly supercritical droplets. Received: 11 June 1996 / Accepted: 14 January 1997     

Growth and optical study of ZnO nanorods

ZnO nanorods were grown by a simple near room temperature, chemical solution method on ZnO-seeded silicon substrates. Study of the ZnO nanorods over different growth times by electron microscopy methods revealed that the resulting ZnO nanorods were single crystalline with a highly preferential growth perpendicular to the substrate and a very good c-axis alignment. The size of the nanorods increased with increasing growth time. The growth mechanism is briefly discussed. Post-annealing in oxygen slightly improved the surface roughness of the ZnO nanorods. Photoluminescence experiments at 1.6 K revealed a major emission peak of the nanorods at around 3.36 eV which is attributed to the band edge transition of ZnO, while defect-related emission is relatively weak.     

硅纳米线的生长及其拉曼光谱研究(英文)

pacc:7830 Nanowiresofferauniqueaccesstolowdi mensionalphysicsandnanotechnology.Silicon nanowires(SiNWs)areparticularlyinteresting duetotheprominentroleofsiliconinelectronics. Variousapproachesforselectivegrowthandbulk productionofSiNWsaredemonstrated.Pla…     

ZnO纳米线的合成与生长机理

采用化学气相沉积系统制备ZnO纳米线,以覆盖一层约5nm厚的Ag薄膜的单晶Si(001)为衬底,纳米线的生长遵循气-液-固(VLS)机理。对得到的样品采用X射线衍射(XRD)和扫描电镜(SEM)进行晶体结构和形貌的表征。XRD结果表明衬底温度在600~700℃时生长的ZnO纳米线具有六方结构和统一的取向。通过扫描电子显微镜分析,比较了生长温度对纳米线直径和长度的影响。实验表明我们可以通过催化剂和温度来实现ZnO纳米线生长的可控。与传统的VLS生长方式不同的是在我们制备的ZnO纳米线顶端并没有看到催化剂颗粒,表明纳米线的生长方式是底部生长,我们对其生长机理进行了研究。     

Growth and addition in a herding model

A model of herding is introduced which is exceptionally simple, incorporating only two phenomena, growth and addition. At each time step either (i) with probability p the system grows through the introduction of a new agent or (ii) with probability q = 1 - p a free agent already in the system is added at random to a group of size k with rate A_k. Two versions of the model, A _k = k and A _k = 1, are solved and in both versions we find two different types of behaviour. When p > 1/2 all the moments of the distribution of group sizes are linear in time for large time and the group distribution is power-law. When p < 1/2 the system runs out of free agents in a finite time. Received 12 February 2002 Published online 9 July 2002     

Growth and conductivity of calcium cuprate films

Crystal and transport properties of epitaxial CaCuO₂ (CCO) films are studied for samples grown on (110)NdGaO₃, (001)SrTiO₃, and (001)LaAlO₃ substrates using the laser ablation technique. The resistivity is found to be dependent on the crystal quality of the films. The conductivity type varies depending on the doping. For lightly doped films with a resistance higher than 0.1 Ω cm, 3D hopping conductivity is observed. For low-resistance CCO films doped with Sr, a power law temperature dependence is found, which is inconsistent with the hopping conductivity. The influence of substrate tilting on the subsequent growth of CaCuO₂ films is studied. YBCO/CCO heterostructures preserve high critical temperatures and small widths of superconducting transitions, which is of special importance for growing Josephson heterostructures for superconducting electronics.