共查询到16条相似文献,搜索用时 15 毫秒
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《中国光学与应用光学文摘》2005,(5)
TN256 2005053606 侧蚀对脊形掺铒光波导放大器净增益的影响=Simulation for the net gains of rib Er-doped waveguide amplifiers and effect of side-sculpture on the net gains[刊,中]/李成仁(辽 宁师范大学物理系.辽宁,大连(116029)),宋昌烈…∥半 导体光电.-2005,26(1).-14-18,21 用限元方法分析了脊形掺铒Al2O3光波导放大器内 部信号光和泵浦光的电磁场模式分布,结合速率方程和传 输方程,数值模拟了脊形Er:Al2O3光波导放大器的净增 益特性,讨论了光波导侧蚀对放大器净增益的影响。图10 参14(严寒) 相似文献
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低重复率的Ti:Al2O3飞秒激光放大器研究 总被引:5,自引:1,他引:4
本文报道了重复频率为10Hz的Ti:Al2O3飞秒激光放大器的研究.基于脉冲啁啾放大技术和采用再生/多通放大装置,得到了能量为8mJ的放大光脉冲,在该放大系统中,激光脉冲获M净增益约8×107. 相似文献
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掺铒玻璃波导放大器中抽运光信号光重叠因子分析 总被引:1,自引:0,他引:1
通过分析掺铒(Er3 )玻璃波导放大器(EDWA)的放大增益机理,提出抽运光与信号光光模场分布之间的归一化重叠积分因子(Γ),并引入到掺铒波导放大器增益模拟计算中,使理论模型更切合实际。以Ag -Na 二次离子交换工艺制作的具有埋入型渐变折射率分布的掺铒波导放大器为例,采用数值方法模拟了条形波导截面上的二维折射率分布及抽运光、信号光的光模场分布。计算了不同工艺参量设置下的Γ大小,讨论Γ对放大器增益的影响。结果显示,在二次离子交换制作过程中设置适当工艺参量优化折射率分布,能有效改善波导中抽运光与信号光光模场分布之间的重叠因子,提高掺铒波导放大器的增益。计算结果显示,在一定条件下,Γ从0.5增至0.8,每厘米长度掺铒波导放大器的放大增益可提高近1.5 dB。 相似文献
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掺铒聚合物光波导放大器的数值分析 总被引:1,自引:1,他引:0
针对掺铒聚合物光波导放大器(EDWA),提出了一种基于Douglas离散格式改进的有限差光束传播法(FD-BPM)的数值计算方法。对每一传输步长结合多能级速率方程计算出EDWA中光场传输强度分布,及掺铒光波导放大器的增益传输特性。设计并研究了掺铒聚合物通道波导和Y形分束器的放大增益特性。在掺铒聚合物直波导中,Er3 浓度为9.0×1025ions·m-3,输入信号和泵浦光功率分别为1μW和2mW,其增益为1.6dB/cm;在掺铒聚合物Y形分束器中,输出信号光分束比相等,并能实现无损耗分束。 相似文献
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制备了NaYF4:Er3+,Yb3+纳米晶,表征了纳米晶的形貌,通过物理掺杂的方式将纳米粒子掺杂到SU-8中作为光波导放大器的芯层材料,优化了波导放大器的尺寸,利用旋涂、刻蚀等工艺,在二氧化硅衬底上制备了光波导放大器。实验中用光漂白法和湿法刻蚀两种方法制备光波导放大器,分别给出了两种方法制备的器件的结构、工艺流程、光场模拟结果,并对两种方法制备的器件的放大特性进行了测试。测试结果表明,当980 nm波长的泵浦光功率为241 mW且1 550 nm波长的信号光功率为0.1 mW时,使用湿法刻蚀法制备的放大器得到2.7 dB的相对增益。当980 nm波长的泵浦光功率为235 mW且1 550 nm波长的信号光功率为0.1 mW时,使用光漂白法制备的放大器得到4.5 dB的相对增益。根据以上测试结果,分析了两种工艺对器件性能的影响。 相似文献
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Annealing behaviour of structure and morphology and its effects on the optical gain of Er3+/Yb3+ co-doped Al2O3 planar waveguide amplifier 下载免费PDF全文
Using transmission electron microscopy (TEM) and x-ray diffraction
analysis, we have studied the structural and morphological evolution
of highly Er/Yb co-doped Al2O3 films in the temperature
range from $600\,^{\circ}\mkern-1mu$C--900$\,^{\circ}\mkern-1mu$C.
By comparison with TEM observation, the annealing behaviours of
photoluminescence (PL) emission and optical loss were found to have
relation to the structure and morphology. The increase of PL
intensity and optical loss above 800$\,^{\circ}\mkern-1mu$C might
result from the crystallization of amorphous Al2O3 films.
Based on the study on the structure and morphology, a rate equation
propagation model of a multilevel system was used to calculate the
optical gains of Er-doped Al2O3 planar waveguide
amplifiers involving the variation of PL efficiency and optical loss
with annealing temperature. It was found that the amplifiers had an
optimized optical gain at the temperature corresponding to the
minimum of optical loss, rather than at the temperature
corresponding to the maximum of PL efficiency, suggesting
that the optical loss is a key factor for determining the optical gain of an
Er-doped Al2O3 planar waveguide amplifier. 相似文献
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Starting with evolution equation of signal optical power in an Er-doped channel waveguide, rigorous theoretical expressions used for correct determination of net gain from signal enhancement measured by using pump-on/off method are derived. These expressions allow to clarify the argument on relationships between net gain, internal gain and signal enhancement in some earlier literatures. Physical implications of net gain, internal gain and signal enhancement expressions are analyzed. Standardized definitions for the three physical quantities are proposed. The definition for net gain is proposed on the basis of practical application of an EDWA in optical fiber communication and the definitions for the latter two are suggested based on the physical implication analysis of their expressions. 相似文献
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Characteristics of diode-pumped Er-doped and Er-Pr-codoped ZBLAN fiber amplifiers were investigated at the 2.7-2.8 microm wavelength range. An amplified signal of 4.6 W was obtained from the singly Er-doped amplifier for an input signal of 110 mW, corresponding to a net gain of 16.2 dB. An amplified signal of 2.65 W was obtained from the Er-Pr-codoped amplifier for an input signal of 70 mW, corresponding to a net gain of 15.8 dB. It is found that the gain bandwidth of the singly Er-doped amplifier is much narrower than that of the Er-Pr-codoped amplifier. Small gain, no gain, or even a loss for shorter-wavelength signals propagating through the singly Er-doped amplifier should attribute for the large number residual populations in the lower laser level caused by the inefficient depopulation of the energy transfer upconversion processes. 相似文献
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Haiyan Chen Jizhi Dai Yongzhi Liu 《International Journal of Infrared and Millimeter Waves》2004,25(12):1791-1798
IR integrated photonic amplifiers at 1.55m operation will have good foreground in optical phasedarray radars for splitters and signal processing. The saturation gain characteristics of IR integrated photonic waveguide amplifiers (taken Er3+Yb3+ co-doped phosphate glass waveguide amplifiers as an example) are studied theoretically. For the homemade laser glass materials the calculated saturation intensities are 2.22kw /cm2 for signal and 10.15kw/cm2 for pump. The effects of absorption saturation of signal and pump lights on the gain of amplifiers are discussed. 相似文献