Optical and electrical properties of C60Tex films

The structure, composition, and electrical and optical properties of thin tellurium-intercalated fullerene films C₆₀Te_x are investigated. The samples of compositions from C₆₀Te_0.1 to C₆₀Te₆ are prepared by thermal evaporation. The sample composition and the impurity distribution are controlled by the Rutherford backscattering technique. The Raman vibrational spectra indicate changes in the symmetry of a C₆₀ molecule: the strain of the molecule increases with a decrease in the tellurium concentration and decreases as the tellurium impurity concentration increases. The evolution of the optical absorption spectra and the electrical conductivity suggests that intercalation of a tellurium impurity leads to modification of the electronic structure of the material. This process is accompanied by a shift and change in shape of the optical absorption edge and a change in the electrical conductivity of films by several orders of magnitude depending on the composition. The electrical conductivity is minimum at a low tellurium impurity content.     

拓扑绝缘体薄膜生长与栅电压调控输运特性研究

文章讨论了三维拓扑绝缘体制备和输运性质研究方面的进展情况.首先介绍了拓扑绝缘体体材料和薄膜的制备,并介绍了文章作者利用分子束外延方法,在硅表面以及高介电常数材料钛酸锶表面生长高质量拓扑绝缘体Bi2Se3薄膜的工作.然后介绍了拓扑绝缘体输运研究的现状,以及文章作者在栅电压调控拓扑绝缘体外延薄膜的化学势和输运性质方面的研究成果.     

拓扑绝缘体薄膜生长与栅电压调控输运特性研究

文章讨论了三维拓扑绝缘体制备和输运性质研究方面的进展情况.首先介绍了拓扑绝缘体体材料和薄膜的制备,并介绍了文章作者利用分子束外延方法,在硅表面以及高介电常数材料钛酸锶表面生长高质量拓扑绝缘体Bi2Se3薄膜的工作.然后介绍了拓扑绝缘体输运研究的现状,以及文章作者在栅电压调控拓扑绝缘体外延薄膜的化学势和输运性质方面的研究成果.     

The characterization of plasma-polymerized C60 thin films

Plasma-polymerized C₆₀ thin films were investigated in the form of a field effect transistor (FET) structure. In the FET device, the C₆₀ polymer acts as a p-type semiconductor, whereas C₆₀ is an n-type semiconductor. Its conduction mechanism can be described as due to variable range hopping. As a sensing device, the C₆₀ polymer can behave as a gas sensor for electrophoric gases and can also be operated as a photo-sensing device in air. Received: 21 April 2001 / Accepted: 23 July 2001 / Published online: 2 October 2001     

Magnetic properties of alkali-intercalated C60 compounds probed by electron spin resonance

In this paper, we present a survey of our ESR results on alkali-intercalated C₆₀ compounds. As we are far from fully understanding the physical properties of fullerides, this article deals successively with the different phases in the phase diagram of A₁C₆₀ compounds. It focuses on both conducting and magnetic properties in metallic compounds, the spin ground state in insulating systems and phase transitions in A₁C₆₀ phases.     

The electron transport properties of pure liquid metals

Progress in the theory of the electrical conductivity and other ordinary transport properties of liquid metals since 1961 is reviewed. After a brief account of the basic nearly-free-electron diffraction formula, the quantitative comparison of this formula with experiment is discussed.

For the alkali metals, the agreement is adequate, given the uncertainty of the pseudopotentials, although there is controversy about the calculation of the temperature coefficient of ρ _L. To explain the observed volume dependence of ρ _L, and the thermoelectric power, it also seems necessary to allow for the variation of the pseudopotential with the positions of the Fermi level and the core levels relative to the bottom of the conduction band.

Quantitative results for the noble and polyvalent metals are meagre, and although calculations of ρ _L for Al and Zn are in excellent agreement with experiment there may be other cases where the basic formula is not adequate. The general question of the structure and convergence of the perturbation series for ρ _L is discussed, and it is suggested that corrections for higher order terms can be minimized by making the pseudopotential as near as possible to the t-matrix of an ion.

The anomalous properties of Hg are then discussed, in the light of the work of Mott (1966). In this connection it is shown that Edwards' formula (1962) for ρ _L, in which the Fermi velocity, v _F, is taken to be that of a free electron, ?k _F/m, despite deviations from the free-electron curve for ?(k), can be derived by using the expectation value of the current operator in place of e v _F in the Boltzmann equation. This modification of the elementary theory allows the Hall constant of a liquid metal to deviate from 1/nec, as found experimentally.     

Electronic structure of C60 films

A complete set of fundamental optical functions of fullerite (C₆₀) films in energy ranges of 2.5–5.0 and 4.0–9.0 eV is calculated using the known spectra of the imaginary and real parts of the dielectric constant. An integrated spectrum of the dielectric constant is decomposed into elementary components. Three basic parameters of each component (the maximum and halfwidth energies and oscillator strength) are determined. Based on the known theoretical calculations of fullerite zones, a scheme of the nature of these components of the dielectric constant is suggested. Udmurt State University, 71, Krasnogeroiskaya Str., Izhevsk, 426034, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 2, pp. 227–232, March–April, 1999.     

Doping and photoelectric properties of C60 films prepared by ionized cluster beam deposition

60 films by means of ionized cluster beam (ICB) deposition. X-ray diffraction (XRD) measurement showed the C₆₀ films to be polycrystalline. The films show negative resistance–temperature coefficients, and their room-temperature resistivity is greater than 10² Ω cm. The films were implanted with 80-keV phosphorus, BBr₃, Ar, and He ions, under doses ranging up to 10¹⁶ cm^-2. The resistivity of the implanted films decreases with increasing doses. n-type electrical conduction was observed for phosphorus-implanted C₆₀ films. The interaction of impinging ions with C₆₀ clusters was found to force the C₆₀ molecules to disintegrate and the films to amorphize. p-type conduction was observed for the C₆₀ films doped with aluminum by simultaneously sputtering aluminum during deposition. C₆₀/Si structures show heterojunction characteristics that can be influenced by light illumination. The photoelectric properties of the films were found to be improved by doping with aluminum. Received: 12 January 1998/Accepted: 24 March 1998     

C60-聚甲基丙烯酸甲脂复合膜的结构、光学和电荷转移特性

描述了通过溶胶-凝胶法制备的C60-PMMA复合膜的结构、紫外-可见吸收特性、Raman散射特性和红外吸收特性.通过对C60紫外-可见吸收光谱,Raman散射谱和红外吸收谱的实验和理论分析,研究了C60与PMMA之间的电荷转移.     

Secondary electron transport in photoemission from films

Transport of electrons which have undergone scattering with formation of electronhole pairs is considered within the framework of a one-dimensional model. Analytical expressions are obtained for the probability of secondary electron output into a vacuum and the interference pattern of light absorption in the film for film illumination from the direction of the substrate and from the vacuum side, with consideration of multiple electron scattering on phonons and the boundary of the emission layer.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No, 6, pp, 89–93, June, 1985.     

Oxygen diffusion in C60 films

We have performed detailed resistivity measurements as a function of temperature in the range from 12 to 300 K on oxygen loaded C₆₀ films. We observe that two ordering phase transitions (i.e.,T ₀=260 K andT _g =90 K) are present in (T), which, in addition, strongly depends on the oxygen content. We find a decrease of both ordering temperatures with increasing oxygen concentrations. The mechanisms of oxygen diffusion are greatly enhanced in the ordered phase on heating. Finally, the transition to a glassy state atT _g is detected as a point of reversibility of the resistivity curve as a function of temperature.