Reducing the driving voltage of organic light-emitting diodes by inserting a transparent ultrathin layer of oxidized silver as a hole-injecting layer

Organic light-emitting diodes (OLEDs) containing a transparent ultrathin layer of oxidized silver as a hole-injecting layer, placed between a indium–tin-oxide (ITO) electrode and the hole-transporting layer, were fabricated, and their electrical and luminescent properties were investigated. The OLEDs had a structure that consisted of an ITO layer; followed by an ultrathin Ag layer oxidized by a ultraviolet (UV)–ozone surface treatment; a N,N′-di-[(1-naphthyl)-N,N′-diphenyl]-1,1′-biphenyl)-4,4′-diamine (α-NPD) layer; a 5,6,11,12-tetraphenylnaphthacene (rubrene)-doped 9,10-diphenylanthracene (DPA) layer; a tris-(8-hydroxyquinoline) aluminum (Alq₃) layer; a lithium fluoride (LiF) layer; and a Al layer. The operating voltages of the OLEDs with the oxidized Ag (i.e., AgO_x) layer were drastically lower than those of the layer-free OLEDs, because the AgO_x layer, which had high oxidizability, contributed to hole injection as it oxidized the surface of the α-NPD layer. However, the external quantum efficiency of the OLEDs with the AgO_x layer was lower than that of the AgO_x layer-free OLEDs, suggesting that the carrier balance (i.e., the balance between the holes and electrons) became uneven in the emission layer, owing to the insertion of the AgO_x layer. It was assumed that this imbalance resulted from the number of holes in the emission layer being higher because of the increase in hole injection in the AgO_x layer.     

Enhancement of the power conversion efficiency for organic photovoltaic devices due to an embedded rugged nanostructural layer

Organic photovoltaic (OPV) cells utilizing a rugged nanostructural layer were fabricated by using a mixed solution method. The charge separation at the heterointerface between the poly(3-hexylthiophene) (P3HT) nanostructural layer with a rugged surface and the C60 layer was increased due to an increase in the interfacial region between the donor and the acceptor layers, resulting in an increase in the short-circuit current density and the power conversion efficiency (PCE) of the OPV cells with a P3HT nanostructural layer. The PCE of the OPV cells with a nanostructural rugged layer is 30% higher than that without a rugged layer.     

单异质结蓝色有机电致发光器件

为了增加电子注入,蓝色有机电致发光器件中通常包含一层由发绿光的Alq组成的电子传输层,因此器件的发光常常不可避免地要出现Alq本身的发光从而影响器件的发光色纯度.在以胺类衍生物(N,N'- diphenyl-N,N'-bis(3-methylphenyl)-1,1'biphenyl-4,4'diamine,TPD)为空穴传输层,DSA衍生物(4,4'-bis (2,2-diphenylvinyl)-1,1'-biphenyl, DPVBi)为发光层,当用Liq为电子注入层与Al结合构成复合电极时所制备的双层单异质结蓝色有机电致发光器件中由于去除了Alq而得到色度纯正的DPVBi的发光,同时又保持了较高的发光效率.     

Bi-layered metal-oxide thin films processed at low-temperature for the encapsulation of highly stable organic photo-diode

A novel approach for the thin film encapsulation (TFE) of organic photo-diode (OPD) for the next generation of organic/inorganic hybrid complementary metal oxide semiconductor (CMOS) image sensor is reported. The TFE is composed of two different metal-oxides stacked in bi-layer thin film architecture. The first layer is composed of aluminum oxide (AlOx) deposited by atomic layer deposition (ALD) at a moderate temperature of 100 °C to avoid any damage to the organic active layer. The first layer acts as a water barrier layer and also as a first protective layer for the deposition of a second silicon oxynitride (SiON) layer that could be processed by plasma-enhanced chemical vapor deposition (PECVD) at higher temperatures. The second layer ensures a better mechanical and chemical stability of the whole structure and also serves as a second protective layer from damages induced during the additional processing stages, such as photolithography or microlensing. With the TFE architecture the overall device stability at 85 °C and 85% relative humidity exceeded 1000 h without observable device performance decrease. This was confirmed by fabricating a green-light sensitive OPD characterized by a stable external quantum efficiency of 60–70%.     

聚合物电致发光器件中用类金刚石碳膜增强电子注入

用正丁胺作碳源,采用射频辉光等离子系统制备类金刚石碳膜(DLC),沉积在聚合物发光器件中的发光层(MEH-PPV)和铝(Al)阴极间作电子注入层.制备了结构为ITO/MEH-PPV/DLC/Al的不同DLC厚度的器件,测量了器件的I-V特性、亮度及效率,研究了DLC层对器件电子注入性能影响的机制.结果表明:当DLC厚度小于1.0nm时,其器件有较ITO/MEH-PPV/Al高的启动电压和低的发光效率;当DLC厚度在1.0～5.0nm之间时,器件的性能随着DLC厚度增加而变好;当DLC厚度为5.0nm时,器件具有最低的启动电压与最高的发光效率;当DLC厚度继续增加时,器件的性能随着DLC厚度增加而变差.并对ITO/MEH-PPV/DLC/Al和ITO/MEH-PPV/LiF/Al的器件性能进行了比较研究.     

Crystalline properties of multiple BP-Si layers grown on silicon substrate

In BP (100) epitaxially grown on Si (100), a high density of defects existed in the early growth layer of the BP less than 100 nm from the Si interface. The BP layer then had a uniform distribution of defects over the high density defect layer. The Si (100) grown on the BP (100) had a uniform distribution of defects. As multiple BP-Si layers were grown, the crystalline quality gradually degraded. The crystalline quality of the underlying BP layer strongly influenced the Si epitaxial layer.     

Theoretical simulation of performances in CIGS thin-film solar cells with cadmium-free buffer layer

Copper indium gallium selenium (CIGS) thin film solar cells have become one of the hottest topics in solar energy due to their high photoelectric transformation efficiency. To real applications, CIGS thin film is covered by the buffer layer and absorption layer. Traditionally, cadmium sulfide (CdS) is inserted into the middle of the window layer (ZnO) and absorption layer (CIGS) as a buffer layer. However, the application of the GIGS/CdS thin film solar cells has been limited because of the environmental pollution resulting from the toxic cadmium atom. Although zinc sulfide (ZnS) has been proposed to be one of the candidates, the performance of such battery cells has not been investigated. Here, in this paper, we systematically study the possibility of using zinc sulfide (ZnS) as a buffer layer. By including the effects of thickness, concentration of a buffer layer, intrinsic layer and the absorbing layer, we find that photoelectric transformation efficiency of ZnO/ZnS(n)/CIGS(i)/CIGS(p) solar cell is about 17.22%, which is qualified as a commercial solar cell. Moreover, we also find that the open-circuit voltage is~0.60 V, the short-circuit current is~36.99 mA/cm² and the filled factor is~77.44%. Therefore, our results suggest that zinc sulfide may be the potential candidate of CdS as a buffer layer.     

Network architecture for optical path transport networks

This paper proposes a new layered transport network architecture on which the WDM optical path network can be effectively created. The optical path network will play a key role in the development of the transport network that will realize the bandwidth-abundant B-ISDN. This paper extends the layered transport network architecture described in ITU-T Recommendation G.803 which is applied in existing SDH networks. First, we elucidate an application example of WDM optical path networks. Next, we propose a new layered architecture for WDM-based transport networks that retains maximum commonality with the layered architectures developed for existing B-ISDN networks. The proposed architecture is composed of circuit layer networks, electrical path layer networks, optical layer networks, and physical media (fiber) networks. The optical layer is divided into an optical path layer and an optical section layer. The optical path layer accommodates electrical paths. Optical section layer networks are divided into optical multiplex section (OMS) layer networks and optical repeater section (ORS) layer networks. The OMS layer network is concerned with the end-to-end transfer of information between locations transferring or terminating optical paths, whereas the ORS layer is concerned with the transfer of information between individual optical repeaters. Finally, a detailed functional block model of WDM optical path networks, the function allocation of each layer, and an optical transport module (OTM) are developed     

Sr(Zr_(0.1)Ti_(0.9))O_3缓冲层厚度对PZT薄膜结晶及性能的影响

采用sol-gel法制备了具有Sr(Zr0.1Ti0.9)O3缓冲层的PbZr0.52Ti0.48O3(PZT)薄膜,研究了缓冲层厚度对样品结晶和性能的影响。结果表明,较薄缓冲层会诱导PZT薄膜的(111)择优取向,添加单层缓冲层(约20nm)使其(111)取向度提高到90%;较厚缓冲层会抑制PZT薄膜的(111)择优取向,添加四层缓冲层(约80nm)使其(111)取向度降低到9%;缓冲层厚度对样品电性能有显著影响,其剩余极化强度由无缓冲层时的26.8×10–6C/cm2增加到缓冲层厚度约为20nm时的38.8×10–6C/cm2。     

Electron Injection Enhancement by Diamond-Like Carbon Film in Polymer Electroluminescence Devices

用正丁胺作碳源,采用射频辉光等离子系统制备类金刚石碳膜(DLC),沉积在聚合物发光器件中的发光层(MEH-PPV)和铝(Al)阴极间作电子注入层.制备了结构为ITO/MEH-PPV/DLC/Al的不同DLC厚度的器件,测量了器件的I-V特性、亮度及效率,研究了DLC层对器件电子注入性能影响的机制.结果表明:当DLC厚度小于1.0nm时,其器件有较ITO/MEH-PPV/Al高的启动电压和低的发光效率;当DLC厚度在1.0～5.0nm之间时,器件的性能随着DLC厚度增加而变好;当DLC厚度为5.0nm时,器件具有最低的启动电压与最高的发光效率;当DLC厚度继续增加时,器件的性能随着DLC厚度增加而变差.并对ITO/MEH-PPV/DLC/Al和ITO/MEH-PPV/LiF/Al的器件性能进行了比较研究.     

Solution‐Processed Organic Light‐Emitting Transistors Incorporating Conjugated Polyelectrolytes

Improved performance of p‐type organic light‐emitting transistors (OLETs) is demonstrated by introducing a conjugated polyelectrolyte (CPE) layer and symmetric high work function (WF) source and drain metal electrodes. The OLET comprises a tri‐layer film consisting of a hole transporting layer, an emissive layer, and a CPE layer as an electron injection layer. The thickness of the CPE layer is critical for achieving good performance and provides an important structural handle for consideration in future optimization studies. We also demonstrate for the first time, good performance solution‐processed blue‐emitting OLETs. These results further demonstrate the simplification of device fabrication and improved performance afforded by integrating CPE interlayers into organic optoelectronic devices.     

Influence of window layer thickness on double layer antireflection coating for triple junction solar cells

The optimization of a SiO₂/TiO₂,SiO₂/ZnS double layer antireflection coating（ARC）on Ga_0.5In_0.5P/In_0.02Ga_0.98As/Ge solar cells for terrestrial application is discussed.The Al_0.5In_0.5P window layer thickness is also taken into consideration.It is shown that the optimal parameters of double layer ARC vary with the thickness of the window layer.     

流沙湾海水养殖珍珠微观结构及形成机制研究

利用扫描电子显微镜(SEM)、原子力显微镜(AFM),研究流沙湾海水珍珠珍珠质层和棱柱层的微尺度生长结构,采用傅里叶变换红外光谱仪(FTIR)对珍珠质层及棱柱层的成分组成进行分析.结果表明:构成海水珍珠珍珠层的珍珠质层,棱柱层和过渡层的微结构和组成是有所不同的,珍珠质层主要为文石型碳酸钙,纳米文石微晶颗粒与有机质颗粒交织形成文石板片,棱柱层中存在方解石和文石两种晶型的碳酸钙,过渡层是由有机质和少量的碳酸钙共同组成;通过对珍珠层结构和成分的研究,初步推断出其生长模式分三个阶段:(1)珠母贝从海水环境中富集钙离子,并分泌有机质诱导碳酸钙成核结晶,二者共同生长形成棱柱层;(2)棱柱层生长到一定阶段,晶体生长的同时珠母贝分泌的有机质发生变化形成一层有机质过渡层,调控碳酸钙的生长;(3)在有机质层上初始成核的纳米文石微晶颗粒与有机质颗粒交织堆砌生长,形成文石板片,文石板片层层堆叠形成结构致密排列有序的珍珠质层.     

Design of Multilayered Nanostructures and Donor–Acceptor Interfaces in Solution‐Processed Thin‐Film Organic Solar Cells

Multilayered polymer thin‐film solar cells have been fabricated by wet processes such as spin‐coating and layer‐by‐layer deposition. Hole‐ and electron‐transporting layers were prepared by spin‐coating with poly(3,4‐ethylenedioxythiophene) oxidized with poly(4‐styrenesulfonate) (PEDOT:PSS) and fullerene (C₆₀), respectively. The light‐harvesting layer of poly‐(p‐phenylenevinylene) (PPV) was fabricated by layer‐by‐layer deposition of the PPV precursor cation and poly(sodium 4‐styrenesulfonate) (PSS). The layer‐by‐layer technique enables us to control the layer thickness with nanometer precision and select the interfacial material at the donor–acceptor heterojunction. Optimizing the layered nanostructures, we obtained the best‐performance device with a triple‐layered structure of PEDOT:PSS|PPV|C₆₀, where the thickness of the PPV layer was 11 nm, comparable to the diffusion length of the PPV singlet exciton. The external quantum efficiency spectrum was maximum (ca. 20%) around the absorption peak of PPV and the internal quantum efficiency was estimated to be as high as ca. 50% from a saturated photocurrent at a reverse bias of ?3 V. The power conversion efficiency of the triple‐layer solar cell was 0.26% under AM1.5G simulated solar illumination with 100 mW cm^?2 in air.     

Graceful Degradation FEC Layer for Multimedia Broadcast/Multicast Service in LTE Mobile Systems

This paper proposes an additional forward error correction (FEC) layer to compensate for the defectiveness inherent in the conventional FEC layer in the Long Term Evolution specifications. The proposed additional layer is called a graceful degradation (GD)‐FEC layer and maintains desirable service quality even under burst data loss conditions of a few seconds. This paper also proposes a non‐delayed decoding (NDD)‐GD‐FEC layer that is inherent in the decoding process. Computer simulations and device‐based tests show a better loss recovery performance with a negligible increase in CPU utilization and occupied memory size.     

Enhanced light extraction efficiency using self-textured aluminum-doped zinc oxide in organic light-emitting diodes

We report enhanced light extraction efficiency in organic light-emitting diodes (OLEDs) fabricated on a self-textured aluminum-doped zinc oxide (AZO) anode layer. The self-textured AZO (ST-AZO) layer was fabricated by radio-frequency magnetron sputtering with a short period of thermal treatment without employing any additional etching processes. The green-emitting OLEDs exhibited a maximum power efficiency of 56.1 lm/W with 33.7% external quantum efficiency (EQE). We achieved a 3.24-fold enhancement in power efficiency and 2.55-fold increase in EQE for the OLED fabricated on the ST-AZO anode compared to that fabricated on the ITO anode. Furthermore, a low driving voltage and high current efficiency were obtained simultaneously for the OLED fabricated on the ST-AZO layer compared to that fabricated on the flat ITO anode layer. The ST-AZO layer acted as a random scattering layer that enabled the efficient extraction of generated light and served as the anode layer instead of the commonly used ITO. Our study showed that the ST-AZO layer fabricated by a simple sputtering process effectively improved the optical and electrical properties of the OLED.     

Solution-based nanostructure to reduce waveguide and surface plasmon losses in organic light-emitting diodes

Organic light-emitting diodes (OLEDs) typically have low out-coupling efficiency. In this paper, a solution-based nanoparticle layer is presented as a nanostructure to enhance the out-coupling efficiency of OLEDs. Silica nanoparticles (NPs) are randomly distributed on indium tin oxide by spin-coating a silica NP solution. By further spin-coating poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) as a hole injection layer, a randomly corrugated PEDOT:PSS layer is fabricated. A nanostructured OLED having the corrugated PEDOT:PSS layer above the NP layer shows enhanced external quantum efficiency and power efficiency because the trapped light of the waveguide and surface plasmon modes is extracted by Bragg diffraction. The nanostructured OLED shows no angular dependence due to the broad periodicities of the corrugation. The simply fabricated and cost-effective silica NP layer nanostructure, which does not require a lithography step, has potential to enhance the efficiency of both white OLED displays and lighting.     

Organic light-emitting devices with a 2-(4-biphenyl)-5-(4-butylphenyl)-1,3,4-oxadiazole layer between the α-naphtylphenyliphenyl diamine and 8-hydroxyquinoline aluminum

Organic light-emitting devices (OLEDs) with a 2-(4-biphenyl)-5-(4-butylphenyl)-1,3,4-oxadiazole layer between the α-naphtylphenyliphenyl diamine and 8-hydroxyquinoline aluminum were fabricated using a vacuum evaporation method. Compared to the different thickness of the buffer layer, the OLEDs with the 1.0 nm buffer layer showed the maximum power efficiency. The enhancements in power efficiency result from an improved balance of hole and electron injections. After comparing among different density buffer layer, PBD are good candidates for hole-injecting buffer layer, and 1.0 nm PBD buffer layer shows better operational durability and life.     

Bright organic electroluminescent devices with double-layer cathode

Electroluminescent devices were fabricated using a diamine derivative and tris (8-quinolinolato) aluminum (III) complex as the hole transport layer and the emitting layer, respectively. The glass substrate/anode/hole transport layer/emitting layer/cathode cells structure was employed. The anode was indium-tin-oxide (ITO) transparent electrode, and the cathode was a double layer consisting of first layer of Mg or Li and the second layer of Ag. Intense bright green emission with luminance of 40400 cd/m² was achieved at 18-V with a current density of 330 mA/cm² for the cell with the Al complex doped with 1 mol.% of coumarin 6 and Li/Ag as the cathode     

Photoemission characteristics of transmission-mode negative electron affinity GaAs and (ln,Ga)As vapor-grown structures

Several types of transmission-mode negative electron affinity (NEA) photocathodes were investigated. The first group consisted of GaAs cathodes of various thicknesses grown on a composite structure composed of a GaP substrate and a Ga(As,P) buffer layer. These cathodes were of two types, one having an abrupt Ga(As,P)/GaAs interface and the other having a compositionally graded interface. The latter type exhibited the highest transmission-mode quantum efficiency, 0.11 electron per incident photon at 0.85 μm. It is assumed that the electron diffusion length L in the GaAs layer is limited by misfit dislocations arising from the lattice mismatch between the GaAs and the Ga(As,P) buffer layer. L increased with cathode layer thickness more rapidly for the graded structure, suggesting that misfit dislocation propagation into the GaAs layer is less when the dislocations are generated gradually (graded structure) than when they are introduced abruptly (ungraded structure). The second group of samples consisted of (In, Ga)As alloy cathodes of various compositions grown on both GaAs and GaP substrates with lattice-mismatch-reducing buffer layers of (In, Ga)As, (In, Ga)P, and Ga(As,P). It was found that photosensitivity was improved significantly by reducing the amount of lattice mismatch between the (In, Ga)As cathode layer and the substrate or buffer layer. Using an (In, Ga)As cathode with an (In,Ga)P buffer layer grown on a GaP substrate, transmission quantum efficiencies in excess of 0.01 were obtained over the relatively broad wavelength range of 0.7 to 1.04 µm.