CMOS VLSI ESD保护电路设计技术

本文对CMOSVLSI芯片ESD失效现象及其ESD事件发生机理进行了分析,介绍了CMOSVLSIESD保护电路设计技术。使用具有大电流放电性能的MOS器件构成的ESD电路,以及采用周密的版图布局布线技术,可实现良好的ESD保护性能。     

一种宽带恒定跨导轨对轨运算放大器的设计

介绍了一种具有轨对轨输入功能的CMOS输入级电路。该电路克服了一般运算放大器只能工作在一定共模输入范围的输入级的缺陷，在各种共模输入电平下有着几乎恒定的跨导，使频率补偿更容易实现，且由于其工作原理与MOS晶体管的C—V解析关系无关，对制造工艺依赖性小，适用于深亚微米工艺。在此基础上，设计出了一种宽带的运算放大器，该运算放大器具有轨对轨输入、输出能力，可以作为常用模拟电路的基本单元模块。它没有严格的共模输入限制，跨导和整体性能稳定，适于为更大规模的数字／模拟混合信号系统提供行为级模型。     

微纳米CMOS VLSI电路可靠性仿真与设计

介绍了CMOS VLSI的可靠性建模和仿真技术的发展历史、相应的仿真工具、失效机理等效电路和算法,重点总结了当前最新的CMOS超大规模集成电路可靠性建模仿真技术,为促进我国集成电路可靠性设计水平起到积极的作用。     

CMOS VLSI设计技术

本文从电路组态,逻辑组态、匹配技术和设计方法上讨论了CMOS VLSI设计技术,以及如何实现高速低功耗和高门密度设计.     

多业务宽带交换

网络交换经历着一系列发展演变;从电路交换到分组交换;从软件交换到硬件交换;从单一网络业务交换到多种业务交换。多业务宽带交换需要协议机制的支持,如业务类型划分,网络资源预约和用户业务最监控等。目前主要的宽带交换网技术有千兆比以太网,千兆比路由器网和ＡＴＭ网三种。文章最后论述了多业务宽带分组交换网的原理和结构。     

Parasitic transistor effects in CMOS VLSI

Parasitic field-effect transistor (FETs) and bipolar junction transistors (BJTs) in a CMOS circuit are described, along with their interactions with each other and their effect on circuit performance. The results are considered to be useful for setting up design rules between n-channel and p-channel active transistors in CMOS IC layout. Novel parasitic transistors associated with next-generation VLSI technologies, such as trench isolation and silicon-on-insulator, are discussed briefly     

Selective epitaxy for CMOS VLSI

Scaling CMOS for VLSI is difficult owing to increasing latchup susceptibility and lateral diffusion of the well which limits packing density. A novel solution to these problems is presented, using selective epitaxial deposition to refill etched wells. In conjunction with a buried-layer implant, a retrograde well profile is achieved with a low sheet resistivity (440 Ω), giving reduced latchup susceptibility. Shallow wells can be used (typically 1 µm) with source/drain-to-well breakdown voltages greater than 9.5 V. Transistor characteristics are good with a long-channel mobility of 192 cm²/V.s and subthreshold slope of 100-mV/decade for a 2.5-µm channel length.     

Quadruple-well CMOS for VLSI technology

A novel process has been developed to fabricate high-density CMOS with four wells. These wells are self aligned to increase packing density. Two of them are relatively deep wells used to optimize both n- and p-channel active devices. The other two are shallow wells under field oxide to form channel stops for both device types. The channel stops provide rigorous isolation among similar devices and between the devices of the opposite polarity. Subthreshold leakage currents in isolation regions are <0.05 pA/µm when devices are biased at <16.5 V. The channel stops also suppress lateral parasitic bipolar action. To reduce the vertical bipolar gain, a new process technique employing a double-retrograde well and transient annealing has been established. For the CMOS structure with 2-µm p⁺-to-p-well spacing, we have eliminated latchup by suppressing the beta product to below unity. Moreover, the quadruple-well approach has produced active n- and p-channel FET's with excellent characteristics such as low threshold voltage (∼±0.5 V), low subthreshold slope (≲95 mV/dec), low contact resistivity (∼10^-7Ω-cm²), and high channel mobility (620 and 210 cm²/V . s).     

Iddq testing for CMOS VLSI

It is little more than 15-years since the idea of Iddq testing was first proposed. Many semiconductor companies now consider Iddq testing as an integral part of the overall testing for all IC's. This paper describes the present status of Iddq testing along with the essential items and necessary data related to Iddq testing. As part of the introduction, a historical background and discussion is given on why this test method has drawn attention. A section on physical defects with in-depth discussion and examples is used to illustrate why a test method outside the voltage environment is required. Data with additional information from case studies is used to explain the effectiveness of Iddq testing. In Section IV, design issues, design styles, Iddq test vector generation and simulation methods are discussed. The concern of whether Iddq testing will remain useful in deep submicron technologies is addressed (Section V). The use of Iddq testing for reliability screening is described (Section VI). The current measurement methods for Iddq testing are given (Section VII) followed by comments on the economics of Iddq testing (Section VIII). In Section IX pointers to some recent research are given and finally, concluding remarks are given in Section X     

Broadband Switching System Architecture

The architecture, the design concept, and the network organization for NTT's broadband switching system field trials are described. The features of this system are: a variety of connection-type services such as reservation-based and asymmetric connections, the installation of small-size remote concentrating switch, and a system integration using various subscriber transmission media such as optical fiber, satellite, and radio. This paper also presents the system architecture along with a study of the broadband switching system through a close look at the results obtained from field trials.     

宽带光交换技术

光交换是一种宽带交换技术。本文简述了空分、时分、波分、码分光交换技术的原理、结构、特点，并阐述了目前光交换技术的发展水平和研究进展。     

一种新型异步ACS的CMOS VLSI设计

介绍一种新型异步 ACS(加法器 -比较器 -选择器 )的设计。一种异步实现结构的异步比较器 ,并通过异步加法单元、比较单元和选择单元的异步互连 ,构成了异步 ACS。在异步 ACS的性能分析时采用了一种基于多延迟模型的新方法 ,建立了异步加法器和比较器的多延迟模型 ,通过逻辑仿真 ,得到异步 ACS的平均响应时间为 3 .66ns,最长响应时间为 8.1 ns。由此可见 ,异步 ACS在性能方面较同步 ACS存在优势。     

Power consumption estimation in CMOS VLSI chips

Power consumption from logic circuits, interconnections, clock distribution, on chip memories, and off chip driving in CMOS VLSI is estimated. Estimation methods are demonstrated and verified. An estimate tool is created. Power consumption distribution between interconnections, clock distribution, logic gates, memories, and off chip driving are analyzed by examples. Comparisons are done between cell library, gate array, and full custom design. Also comparisons between static and dynamic logic are given. Results show that the power consumption of all interconnections and off chip driving can be up to 20% and 65% of the total power consumption respectively. Compared to cell library design, gate array designed chips consume about 10% more power, and power reduction in full custom designed chips could be 15%     

Surface induced latchup in VLSI CMOS circuits

Experimental as well as theoretical results on the latch-up effect in CMOS structures with and without an epitaxial layer are presented. In structures with an epitaxial layer the critical current for latchup firing is two orders of magnitude higher and latchup is essentially surface controlled. The strong surface effect observed is a consequence of the gate influence of surface conduction of the field oxide MOSFET's and on current gains of the bipolar transistors. Latch-up sensitivity can be decreased by increasing p⁺/p-well and n⁺/n-well spacing, by decreasing expitaxial layer thickness and by increasing substrate doping. In reducing the lateral dimensions, short-channel effects of the field oxide transistors imply the most severe limitations for latch-up immunity.     

Explicit formulation of delays in CMOS VLSI

An explicit formulation for the transient response of CMOS inverters is given, including load conditions and driving waveforms. Validation of the initial hypothesis is obtained through SPICE simulations. The results obtained show clear evidence of the influence of structural and parasitic parameters on propagation times, allowing fast optimisation of the data path.     

A Design Style for VLSI CMOS

CMOS is an attractive technology for the realization of VLSI systems. However conventional static CMOS design techniques lead to circuits which are slower and much less densely packed than equivalent NMOS circuits. After a brief review of precharge-discharge techniques, a novel method for designing clocked dynamic CMOS is described. This uses a four-phsse clocking scheme that is free from race and charge-sharing problems and results in faster, more compact layouts. A test chip and a full custom 25 000 transistor serial signal processing chip have been designed using this technique. Results obtained by probing the test ship are presented.     

Characterization of CMOS devices for VLSI

CMOS bulk and SOS technologies are discussed for VLSI with emphasis on static and dynamic characteristics of two-input NAND gates. Optimum performance (minimum figure of merit FM = tpdPd) is obtained for a CMOS/SOS two-input NAND gate (FO = 2, CL= 22 fF) with an electrical channel length L = 0.75 µm, channel width W = 5.0 µm, and oxide thickness Xo= 450 Å with VDD= 3.0 V, to yield tpd= 400 ps and Pd= 250 µW (tpdPd= 100 fJ) at room temperature. Bulk technology performs within a factor of 2 of SOS for tpdand Pd. CMOS technologies offer subnanosecond propagation delays, similar to ECL bipolar, at the low submilliwatt power levels of CMOS. An analytical expression for tpddescribes the performance of two-input NAND gates in terms of device modeling and fabrication parameters. Such an expression provides a hierarchial modeling approach to characterize minicells for VLSI.     

Sensitivity-based CMOS VLSI circuit performance optimisation

Sensitivity models are presented for propagation delay and average power dissipation which provide low-cost and accurate differential performance information not previously available. A sensitivity-based optimisation technique is compared with a formal mathematical optimisation technique and the results demonstrate that accurate VLSI circuit performance optimisation is now feasible     

Characterization of CMOS Devices for VLSI

CMOS bulk and SOS technologies are discussed for VLSI with emphasis on static and dynamic characteristics of two-input NAND gates. Olpthnum performance (minimum figure of merit FM= f/sub pd/P/sub d/) is obtained for a CMOS/SOS two-input NAND gate (FO = 2, C/sub L/ = 22 fF) with an electrical channel length L = 0.75 /spl mu/m, channel width W= 5.0 /spl mu/m, and oxide thickness X/sub O/ = 450 /spl Aring/with V/sub DD/ = 3.0 V, to yield t/sub pd/ = 400 ps and P/sub d/ = 250 /spl mu/W (t/sub pd/P/sub d/ = 100 fJ) at room temperature. Bulk technology performs within a factor of 2 of SOS for t/sub pd/ and P/sub d/. CMOS technologies offer subnanosecond propagation delays, similar to ECL bipolar, at the low submilliwatt power levels of CMOS. An analytical expression for t/sub pd/ describes the performance of two-input NAND gates in terms of device modeling and fabrication parameters. Such an expression provides a hierarchal modeling approach to characterize mini-cells for VLSI.