A 100-Gb/s throughput ATM switch MCM with a 320-channel paralleloptical I/O interface

For an ATM switch system, we have developed a 100-Gb/s input/output (I/O) throughput optical I/O interface ATM switch multichip module (MCM) that has 320-ch optical I/O ports. This MCM is fabricated using ceramic (MCM-C) technology and very-small highly-parallel O/E and E/O optical converters. It uses 0.25-μm complementary metal oxide semiconductors (CMOS) ATM switch large scale integrations (LSIs) and has a total I/O throughput of up to 160 Gb/s. A prototype module with total I/O throughput of 100 Gb/s has been partially assembled using eight optical I/O interface blocks, each composed of a 40-ch O/E converter and a 40-ch E/O converter; the data rate per channel is from dc to 700 Mb/s. Using this module we developed an optical I/O interface ATM switch system and confirmed the operation of the optical interface     

Breakthrough technologies for the high-performance electrical ATMswitching system

A high-performance electrical asynchronous transfer mode (ATM) switching system is described with the goal of Tb/s ATM switching. The first step system was to use advanced Si-bipolar very large scale integrated (VLSI) technologies and the multichip technique. 1.0 μm bipolar SST technologies and Cu-polyimide multilayer MCM realized a 160 Gb/s throughput ATM system. The performance limitations of the 160 Gb/s system were power supply/cooling and module interconnection. The new ATM switching system, named OPTIMA-1, adopted optical interconnection/distribution to overcome the limitations and achieve 640 Gb/s. The system uses high-performance complementary metal-oxide-semiconductor (CMOS) devices and optical wavelength division multiplexing (WDM) interconnection. Combining OPTIMA-1 with optical cell-by-cell routing functions, i.e., photonic packet routing, can realize variable bandwidth links for 5 Tb/s ATM systems. This paper first reviews high-performance electrical ATM (packet) switching system architecture and hardware technologies. In addition, system limitations are described. Next, the important breakthrough technology of optical WDM interconnection is highlighted. These technologies are adopted to form OPTIMA-1, a prototype of which is demonstrated. The key technologies of the system are advanced 80 Gb/s CMOS/MCM, electrical technologies, and 10 Gb/s, 8 WDM, 8×8 optical interconnection. Details of implementation technologies are also described. Optical cell-by-cell (packet-by-packet) routing is now being studied. From the architectural viewpoint, dynamic link bandwidth sharing will be adopted. In addition, an AWG that performs cell-by-cell routing and a distributed large scale ATM system are realized. Optical routing achieves the 5 Tb/s needed in future B-ISDN ATM backbone systems     

20.8 Gb/s GaAs LSI self-routing switch for ATM switching systems

An 8×8 self-routing hardware switch providing 20.8 Gb/s throughput has been developed for asynchronous transfer mode (ATM) switching systems. The basic architecture of this switch is a Batcher-Banyan network. A new mechanism for data processing and distributing high-speed signals is proposed. This switching system consists of three LSIs using a 0.5-μm gate GaAs MESFET technology. These LSIs are a switching network LSI for exchanging packet cells with eight cell channels, a negotiation network for screening of cells destined for the same output port, and a demultiplexer LSI for converting the cell streams from the switching network LSI to the eight streams per channel. These LSIs are mounted in a 520-pin multichip module package. The total number of logic gates is 13.3 k, and the power dissipation is 24 W. The switching system fully operates at a data rate of 2.6 Gb/s, and its throughput is 20.8 Gb/s     

A 10-Gb/s (1.25 Gb/s×8)4×2 0.25-μm CMOS/SIMOX ATMswitch based on scalable distributed arbitration

This paper presents the design and implementation of a scalable asynchronous transfer mode switch. We fabricated a 10-Gb/s 4×2 switch large-scale integration (LSI) that uses a new distributed contention control technique that allows the switch LSI to be expanded. The developed contention control is executed in a distributed manner at each switch LSI, and the contention control time does not depend on the number of connected switch LSI's. To increase the LSI throughput and reduce the power consumption, we used 0.25-μm CMOS/SIMOX (separation by implanted oxygen) technology, which enables us to make 221 pseudo-emitter-coupled-logic I/O pins with 1.25-Gb/s throughput. In addition, power consumption of 7 W is achieved by operating the CMOS/SIMOX gates at -2.0 V. This consumption is 36% less than that of bulk CMOS gates (11 W) at the same speed at -2.5 V. Using these switch LSI's, an 8×8 switching multichip module with 80-Gb/s throughput was fabricated with a compact size     

A 9.6-Gb/s HEMT ATM switch LSI with event-controlled FIFO

An asynchronous-transfer-mode (ATM) switch LSI was designed for the broadband integrated services digital network (B-ISDN) and fabricated using 0.6-μm high-electron-mobility-transistor (HEMT) technology. To enhance the high-speed performance of direct-coupled FET logic (DCFL), event-controlled logic was used instead of conventional static memory for the first-in first-out (FIFO) buffer circuit. The 4.8-mm×4.7-mm chip contains 7100 DCFL gates. The maximum operating frequency was 1.2 GHz at room temperature with a power dissipation of 3.7 W. The single-chip throughput was 9.6 Gb/s. An experimental 4-to-4 ATM switching module using 16 switch LSIs achieved a throughput of 38.4 Gb/s     

64-Gb/s highly reliable network switch (RHiNET-2/SW) using paralleloptical interconnection

RHiNET-2/SW is a network switch that enables high-performance optical network based parallel computing system in a distributed environment. The switch used in such a computing system must provide high-speed, low-latency packet switching with high reliability. Our switch allows high-speed 8-Gb/s/port optical data transmission over a distance of up to 100 m, and the aggregate throughput is 64 Gb/s. In RHiNET-2/SW, eight pairs of 800-Mb/s×12-channel optical interconnection modules and a one-chip CMOS ASIC switch LSI (a 784-pin BGA package) are mounted on a single compact board. To enable high-performance parallel computing, this switch must provide high-speed, highly reliable node-to-node data transmission. To evaluate the reliability of the switch, we measured the bit error rate (BER) and skew between the data channels. The BER of the signal transmission through one I/O port was better than 10^-11 at a data rate of 800 Mb/s ×10 b with a large timing-budget margin (870 ps) and skew of less than 140 ps. This shows that RHiNET-2/SW can provide high-throughput, highly reliable optical data transmission between the nodes of a network-based parallel computing system     

40-Gb/s OTDM to 4×10 Gb/s WDM conversion in monolithic InPMach-Zehnder interferometer module

Transformation of high bit-rate optical time-domain multiplexed (OTDM) signals into a multitude of lower bit-rate wavelength-division-multiplexed (WDM) channels is demonstrated by means of a single monolithically integrated indium phosphide Mach-Zehnder interferometer with semiconductor optical amplifiers in its arms. Full demultiplexing of 10-Gb/s OTDM signals into 4×10-Gb/s WDM channels is demonstrated. Bit-error-rate penalties are below 1.5 dB for polarization independent signal conversion throughout the 1.55-μm wavelength range     

80 Gbit/s ATM switch MCM based on multilayer ceramic technology

An 80 Gbit/s asynchronous transfer mode (ATM) switch multichip module (MCM) of dimensions 114×160×6.5 mm has been fabricated. This MCM can support high-density mounting and high-speed interconnection among large-scale-integrated (LSI) chips. Using LSI, ceramic-substrate, high-speed/high-power connector, and compact liquid-cooling technologies, an 80 Gbit/s ATM switching module has been built     

Large-scale WDM star-based photonic ATM switches

This paper describes the large-scale photonic asynchronous transfer mode (ATM) switching systems being developed in NTT Laboratories. It uses wavelength division multiplexing (WDM) techniques to attack 1 TB/s throughput. The architecture is a simple star with modular structure and effectively combines optical WDM techniques and electrical control circuits. Recent achievements in important key technologies leading to the realization of large-scale photonic ATM switches based on the architecture are described. We show that we can obtain a 320 Gb/s system that can tolerate the polarization and wavelength dependencies of optical devices. Our experiments using rack-mounted prototypes demonstrate the feasibility of our architecture. The experiments showed stable system operation and high-speed WDM switching capability up to the total optical bandwidth of 12.8 nm, as well as successful 10 Gb/s 4×4 broadcast-and-select and 2.5 Gb/s 16×16 wavelength-routing switch operations     

A 622-Mb/s 8×8 ATM switch chip set with shared multibufferarchitecture

An asynchronous transfer mode (ATM) switch chip set, which employs a shared multibuffer architecture, and its control method are described. This switch architecture features multiple-buffer memories located between two crosspoint switches. By controlling the input-side crosspoint switch so as to equalize the number of stored ATM cells in each buffer memory, these buffer memories can be treated as a single large shared buffer memory. Thus, buffers are used efficiently and the cell loss ratio is reduced to a minimum. Furthermore, no multiplexing or demultiplexing is required to store and restore the ATM cells by virtue of parallel access to the buffer memories via the crosspoint switches. Access time for the buffer memory is thus greatly reduced. This feature enables high-speed switch operation. A three-VLSI chip set using 0.8-μm BiCMOS process technology has been developed. Four aligner LSIs, nine bit-sliced buffer-switch LSIs, and one control LSI are combined to create a 622-Mb/s 8×8 ATM switching system that operates at 78 MHz. In the switch fabric, 155-Mb/s ATM cells can also be switched on the 622-Mb/s port using time-division multiplexing     

TORUS: terabit-per-second ATM switching system architecture basedon distributed internal speed-up ATM switch

A high-speed and distributed ATM switch architecture, called the TORUS switch, is proposed with the aim of achieving a terabit-per-second ATM switching system. The switch is a distributed and scalable internal speed-up crossbar-type ATM switch with cylindrical structure. The self-bit-synchronization technique and optical interconnection technology are combined to achieve gigabit-rate cell transmission, where high-density implementation technologies such as multichip module technology are not required at all. Also, distributed contention control based on the fixed output-precedence scheme is newly adopted. This control is very suitable for high-speed devices because its circuit is achieved with only one gate in each crosspoint. A TORUS switch is fabricated as a 4×2 switch module using optical interconnection technology and very high-speed crosspoint LSIs, constructed using an advanced Si-bipolar process. Measured results confirm that the TORUS switch can be used to realize an expandable terabit-rate ATM switch     

Broadband video switching

A broadband 64×16 space-switching approach and its applicability to large-scale broadband switching systems are described. The design uses a technique that prevents the parasitic capacitances from reducing the switching speed. The switching system was implemented in 3-μm CMOS VLSI and operated in excess of 150 Mb/s. Computer simulation indicates a 1-Gb/s potential with a 1-μm CMOS implementation     

A 2.125-Gb/s BiCMOS fiber channel transmitter for serial datacommunications

A 2.125-Gb/s transmitter meeting the specifications of the emerging ANSI Fiber Channel standard has been developed using BiCMOS technology. This transmitter features (1) a fully bipolar 10:1 multiplexer (MUX) and a 2.125-GHz retimer for high-accuracy transmission of data, (2) an emitter-coupled logic (ECL) CMOS analog phase-locked loop, (3) pure ECL-level output for direct connection to the currently available optical modules, and (4) BiCMOS process technology that includes 0.25-μm CMOS devices and 20-GHz bipolar devices. The LSI serializes 32-bit-wide, 53.125-Mb/s data into 2.125-Gb/s data through a CMOS 8B10B encoder. The chip area is 3×2 mm², and the power dissipation is 860 mW     

High-speed InGaAlAs-InAlAs MQW directional coupler waveguide switchmodules integrated with a spotsize converter having a lateral taper,thin-film core, and ridge

Fully packaged 2×2 and 4×4 semiconductor optical switch modules are successfully developed by integrating spotsize converters (SSCs) consisting of lateral tapers, thin-film cores, and ridges in InGaAlAs-InAlAs multiple quantum-well (MQW) directional coupler waveguide switches in the 1.55-μm wavelength region. Good reproducibility is obtained for the perfect coupling length of the directional coupler by appropriately designing the ridge width and gap of strip-loaded optical waveguides and by making use of the Cl₂ reactive-ion-beam-etching and successive wet-etching. Since the switching time is sufficiently short (<70 ps, which is limited by the driver speed) for the 4×4 switch module, no bits are lost during a 10-Gb/s switching experiment at a wavelength of 1.55 μm     

A 250-Mb/s 32×32 CMOS crosspoint LSI for ATM switchingsystems

A 32×32 crosspoint LSI and a time-slot controlled asynchronous-transfer-mode (ATM) switch architecture utilizing the LSI are presented. The ATM switch, which is classified as an input-buffer-type ATM switch, enables 99% throughput and broadcasting capability. The crosspoint LSI is characterized by the bit-map oriented and pipelined connection control method which can switch and broadcast 160-Mb/s ATM cells, 32×32 switch cells which have less parasitic capacitance, and emitter-coupled-logic (ECL) compatible interfaces which are compatible with a 160-MHz broadband ISDN data rate. The LSI has been fabricated by a 1-μm CMOS process. The chip size is 7.4 mm×7.4 mm. According to the evaluation, operation at 250 Mb/s is confirmed. 1.2-W power consumption is observed at 160-Mb/s operating condition     

3.5-Gb/s×4-ch Si bipolar LSI's for optical interconnections

The 3.5-Gb/s, 4-ch transmitter and receiver LSI's described here include a 5-to-1 multiplexer, a 1-to-5 demultiplexer, and analog PLL circuits that can generate high-speed clock (3.5 GHz) and retimed data. The chips make it possible to connect twenty pairs of 700-Mb/s electrical ports (14-Gb/s throughput) without any external elements even for the PLL. Both the transmitter and receiver LSI are 4.5-mm-square and are fabricated by a 40-GHz 0.5-μm Si bipolar process. The transmitter LSI dissipates 2.5 W, and the receiver LSI dissipates 3.6 W. Both have -4.5- and -2-V supply voltages     

A six-port 30-GB/s nonblocking router component usingpoint-to-point simultaneous bidirectional signaling for high-bandwidthinterconnects

This paper describes a high-speed six-port router component with a sustainable I/O bandwidth in excess of 30 GB/s. The device uses three distinct clock domains to connect low-speed processor and I/O nodes to a high-speed switch fabric capable of data rates of up to 6.4 Gb/s per wire on copper system interconnects. The router component is fabricated in 0.18-μm bulk CMOS technology. The 100-mm² device contains approximately 6.6 million transistors and consumes 21 W at a link transfer rate of 3.2 Gb/s and a supply voltage of 1.75 V. Integrated on a single component, the router core and the simultaneous bidirectional links form a building block useful in the realization of large high-bandwidth multiprocessor systems     

A prototype broadcast-and-select photonic ATM switch with a WDMoutput buffer

A rack-mounted prototype of a broadcast-and-select (B and S) photonic ATM switch is fabricated. This switch has an optical output buffer utilizing wavelength division multiplexed (WDM) signals. The WDM technology solves. The cell-collision problem in a broadcast-and-select network and leads to a simple network architecture and the broadcast/multicast function. The prototype can handle 10-Gb/s nonreturn-to-zero (NRZ) coded cells and 5-Gb/s Manchester-coded cells and has a switch size of four. In this prototype, the level and timing design are key issues. Cell-by-cell level fluctuation is overcome by minimizing the loss difference between the optical paths and adopting a differential receiver capable of auto-thresholding. The temperature control of delay lines was successful in maintaining the phase synchronization. Using these techniques, we are able to provide a WDM highway with a bit error rate of less than 10^-12. Fundamental photonic ATM switching functions, such as optical buffering and fast wavelength-channel selection, are achieved. We show our experimental results and demonstrate the high performance and stable operation of a photonic ATM switch for use in high-speed optical switching systems as an interconnect switch for a modular ATM switch and an ATM cross-connect switch     

A GaAs HBT 16×16 10-Gb/s/channel crosspoint switch

A 16×16 crosspoint switch IC has been designed and implemented in a 2-μm GaAs heterojunction bipolar transistor (HBT) technology. The IC is a strictly nonblocking switch with broadcast capability and asynchronous data paths. The IC has fully differential internal circuitry and is packaged in a custom high-speed assembly. Test results confirmed that the IC achieves a 10-Gb/s/channel (or 160-Gb/s aggregate) capacity, the highest reported to date for a 16×16 crosspoint switch IC     

Single-chip 4×500-MBd CMOS transceiver

A CMOS chip containing four 500-MBd serializer/deserializer pairs has been designed to relieve interconnect congestion in an ATM switch system. The 9.7×9.7 mm² chip fabricated in a 0.8-μm technology is packaged on a ceramic ball grid array and dissipates 3.5 W. It replaces a 72-wire parallel interface with an eight-line serial interface transparent to the user and supports transmission at 1.6 Gb/s per direction in full-duplex mode. Virtually error-free operation in a system environment over electrical serial links having up to 9 dB loss at 500 MHz has been realized using signal predistortion for the serial bit stream and PLL clock recovery for each of the four receivers. Interface timing and serial-link driver strength are programmable