共查询到20条相似文献,搜索用时 15 毫秒
1.
提出一种不通过波导脊背与微带导带接触来实现脊波导-微带射频信号过渡的新型电路,具有工作频带宽、插入损耗小、电性能稳定等优点,非常适合工程应用。通过对该非接触式脊波导-微带过渡与Lange 电桥进行理论分析与仿真计算,提出了一种可覆盖C/ X/ Ku 频段的宽带功率合成方法,并按照该方案在6 ~18 GHz 频段内设计了一种以脊波导为射频端口的高效率2 路功率合成放大器。实测结果表明,6 ~18 GHz 频率范围内的无源合成效率高于87%。采用该电路将典型输出功率12 W 的2 只MMIC 的输出功率合成,在6 ~18 GHz 频率范围内得到了高于20 W 的饱和功率输出,附加效率最高可达28. 9%。该宽带功率合成放大器以脊波导为接口,不但功率容量大,且便于采用脊波导功率合成器进行高效率二次合成,为6 ~18 GHz 更大输出功率的固态功放研制提供了解决方案。 相似文献
2.
El-Nozahi M. Sanchez-Sinencio E. Entesari K. 《Solid-State Circuits, IEEE Journal of》2010,45(2):289-299
3.
Meaamar A. Boon Chirn Chye Do Man Anh Yeo Kiat Seng 《Microwave and Wireless Components Letters, IEEE》2009,19(4):245-247
A wideband CMOS low-noise amplifier (LNA) is proposed by using the concept of mutual coupling technique implemented through a symmetric center-tap inductor. A frequency widening network is designed with a center-tap inductor at the input and the output of an LNA to achieve bandwidth extension with a single stage amplifier. The proposed wideband low noise amplifier is implemented in the 0.18 mum CMOS technology. This design obtains a bandwidth of 3-8 GHz with a power consumption of 3.77 mW from a 1.8 V supply. 相似文献
4.
《Microwave Theory and Techniques》1983,31(2):183-188
A high average power W-band solid-state transmitter using a 2-diode and a 4-diode IMPATT power combiner has achieved over 1.89 W and exceedingly versatile performance over a broad range of pulsewidths and duty cycles with a tunable bandwidth from 90 GHz to 99 GHz. 相似文献
5.
《Microwave and Wireless Components Letters, IEEE》2009,19(11):737-739
6.
To-Po Wang Huei Wang 《Microwave and Wireless Components Letters, IEEE》2007,17(9):685-687
A 71-80 GHz amplifier using 0.13-mum standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This four-stage cascade thin-film microstrip amplifier achieves the peak gain of 7.0 dB at 75 GHz. The 3-dB frequency bandwidth range is from 71 to 80 GHz. The amplifier demonstrates the highest amplification frequency and smallest chip size among previous published millimeter-wave (MMW) 0.13-mum CMOS amplifiers. 相似文献
7.
Chun-Lin Kuo Bo-Jr Huang Che-Chung Kuo Kun-You Lin Huei Wang 《Microwave and Wireless Components Letters, IEEE》2008,18(7):455-457
10-35 GHz doubly balanced mixer using a 0.13-mum CMOS foundry process is presented in this letter. Using the bulk-driven topology, the number of transistors of the doubly balanced mixer is reduced; thus the mixer can achieve a low supply voltage and low power consumption. This bulk-driven mixer exhibits a measured conversion gain of -1 plusmn 2 dB from 10 to 35 GHz of radio frequency (RF) with a fixed intermediate frequency (IF) of 100 MHz. The measured local oscillation (LO) to IF and RF-IF isolations are better than 30 dB. The chip area of the mixer is 0.6 times 0.4 mm2. The total power consumption included output buffer is only 6 mW. 相似文献
8.
《Microwave and Wireless Components Letters, IEEE》2009,19(9):572-574
9.
A 25-75 GHz compact double balanced frequency doubler fabricated in standard 0.18-mum CMOS process is demonstrated. The resistive doubler is composed of two identical asymmetric broadside-coupled baluns, and a quad GS-connected diode. The fabricated doubler achieves a radio frequency bandwidth from 25 to 75 GHz with a maximum output power better than +3 dBm; the fundamental signal rejection is ranging from 32 to 59 dB, and only occupies a chip size of 0.24 mm2. To the knowledge of the authors, this double balanced frequency doubler is the first demonstration with an operating frequency up to 75 GHz in 0.18-mum CMOS technology and shows this silicon-based frequency doubler can compare with its GaAs counterpart. 相似文献
10.
Kooi J.W. Kovacs A. Sumner M.C. Chattopadhyay G. Ceria R. Miller D. Bumble B. LeDuc H.G. Stern J.A. Phillips T.G. 《Microwave Theory and Techniques》2007,55(10):2086-2096
We report on a 275-425-GHz tunerless waveguide receiver with a 3.5-8-GHz IF. As the mixing element, we employ a high-current-density Nb-AlN-Nb superconducting-insulating-superconducting (SIS) tunnel junction. Thanks to the combined use of AlN-barrier SIS technology and a broad bandwidth waveguide to thin-film microstrip transition, we are able to achieve an unprecedented 43% instantaneous bandwidth, limited by the receiver's corrugated feedhorn. The measured double-sideband (DSB) receiver noise temperature, uncorrected for optics loss, ranges from 55 K at 275 GHz, 48 K at 345 GHz, to 72 K at 425 GHz. In this frequency range, the mixer has a DSB conversion loss of 2.3 plusmn1 dB. The intrinsic mixer noise is found to vary between 17-19 K, of which 9 K is attributed to shot noise associated with leakage current below the gap. To improve reliability, the IF circuit and bias injection are entirely planar by design. The instrument was successfully installed at the Caltech Submillimeter Observatory (CSO), Mauna Kea, HI, in October 2006. 相似文献
11.
《Photonics Technology Letters, IEEE》2008,20(21):1799-1801
12.
《Solid-State Circuits, IEEE Journal of》2009,44(5):1401-1414
13.
Van Caekenberghe K. Brakora K.M. Hong W. Jumani K. DaHan Liao Rangwala M. Wee Y.-Z. Zhu X. Sarabandi K. 《Antennas and Propagation, IEEE Transactions on》2008,56(10):3241-3247
A probe station based setup for on-wafer antenna measurements is presented. The setup allows for measurement of return loss and radiation patterns of an on-wafer antenna-hence-forth referred to as the antenna under test (AUT), radiating at broadside and fed through a coplanar waveguide (CPW). It eliminates the need for wafer dicing and custom-built test fixtures with coaxial connectors or waveguide flanges by contacting the AUT with a coplanar microwave probe. In addition, the AUT is probed exactly where it will be connected to a transceiver IC later on, obviating de-embedding of the measured data. Sources of measurement errors are related to calibration, insufficient dynamic range, misalignment, forward scattering from nearby objects, and vibrations. The performance of the setup is demonstrated from 2 to 40 GHz through measurement of an on-wafer electrically small slot antenna (lambda0/35 times lambda0/35,3.5 times 3.5 mm2) radiating at 2.45 GHz and an aperture coupled microstrip antenna (2.4 times 1.7 mm2) radiating at 38 GHz. 相似文献
14.
15.
Shashkin I. S. Leshko A. Y. Nikolaev D. N. Shamakhov V. V. Rudova N. A. Bakhvalov K. V. Lutetskiy A. V. Kapitonov V. A. Zolotarev V. V. Slipchenko S. O. Pikhtin N. A. Kop’ev P. S. 《Semiconductors》2020,54(4):484-488
Semiconductors - The emission characteristics of narrow mesa-stripe (5.5 μm) lasers based on asymmetric AlGaAs/GaAs heterostructures are studied. It is shown that the maximum optical power... 相似文献
16.
Park S.-J. El-Tanani M.A. Reines I. Rebeiz G.M. 《Microwave Theory and Techniques》2008,56(10):2348-2355
This paper presents a low-loss 4-6-GHz 3-bit tunable filter on a quartz substrate using a high-Q 3-bit orthogonal bias RF microelectromechanical systems capacitance network. Detailed design equations for the capacitively loaded coupled lambda/2 resonators and with capacitive external coupling and source-load impedance loading are discussed. Measurements show an unloaded Q of 85-170, an insertion loss of 1.5-2.8 dB, and a 1-dB bandwidth of 4.35plusmn0.35% at 4-6 GHz. The measured third-order intermodulation intercept point and 1-dB power compression point at 5.91 GHz are > 40 and 27.5 dBm, respectively. The unloaded Q can be improved to 125-210 with the use of a thicker bottom electrode. To our knowledge, this is the highest Q tunable planar filter to date at this frequency range. 相似文献
17.
本文综合考虑影响合成效率的因素以及毫米波段的工艺精度,设计了一种改进型的双级支线功分/功合网络,改善了驻波比和幅相特性,保证了良好的合成效率.并在此基础上,研制了一种高性能的毫米波固态功率放大器,在38~40GH:的通带内,实现34.8dBm输出功率,55dB增益的良好电性能,具有结构简单、加工简易等特点. 相似文献
18.
A short survey of technological aspects of electrochromism with various electroactive species is given. Different approaches with inorganic and organic materials have been pursued in the past. So far widespread usage of this technology for large area applications has not been achieved. Nevertheless one major technical product, self‐darkening rear‐view mirrors for cars, is already well established. This article reviews some research results on electroactive polythiophenes, especially poly(3,4‐alkylenedioxythiophenes). Some promising results with the commercially available electrically conducting polymer Baytron P (PEDT/PSS) are presented. It is demonstrated that an all solid‐state electrochromic multilayer assembly based on a polymeric electrochromic material might be close to technical realization. The coating of large area substrates with aqueous poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) dispersion can be a way to an economically viable product. 相似文献
19.
Metal-oxide-high-kappa dielectric-oxide-silicon capacitors and transistors are fabricated using HfO2 and Dy2O3 high-kappa dielectrics as the charge storage layer. The programming speed of Al/SiO2/Dy2O3/ SiO2/Si transistor is characterized by a DeltaV th shift of 1.0 V with a programming voltage of 12 V applied for 10 ms. As for retention properties, the Al/SiO2/Dy2O3/ SiO2/Si transistors can keep a DeltaV th window of 0.5 V for 2 times108 s. The corresponding numbers for Al/ SiO2/HfO2/SiO2/Si transistors are 100 ms and 2 times104 s, respectively. The better performance of the Al/SiO2/Dy2O3/ SiO2/Si transistors is attributed to the larger conduction band offset at the Dy2O3/SiO2 interface. 相似文献
20.
《Microwave and Wireless Components Letters, IEEE》2009,19(3):164-166