Generation of single-cycle THz transients with high electric-field amplitudes

Single-cycle terahertz (THz) transients in the frequency range 0.3-7 THz with electric-field amplitudes of more than 400 kV/cm are generated by four-wave mixing of the fundamental and the second harmonic of 25 fs pulses from a Ti:sapphire amplifier in ionized air. These transients are fully characterized by electro-optic sampling with ZnTe and GaP crystals. One can tune the center frequency of the THz transients by varying the length of the incident pulse. The electric-field amplitude increases linearly with the incident pulse energy.     

Conduction transients in single-crystal octadecane

Charge transients were measured in high-quality single-crystal octadecane after electron beam irradiation. The signals produced were of significantly greater duration than the ionization pulse but were not interpretable by conventional uniform field time-of-flight analysis. By assuming that the specimens contained a strong inbuilt polarization field, it was possible to predict the properties of the observed charge transients and obtain values for the positive and negative drift mobilities. The results indicated a positive species with a mobility of 0.7 × 10^?4 m² V^?1 s^?1 and a negative carrier value of 1.6 × 10^?4 m² V^?1 s^?1. The standard deviations observed in the data were large, being 0.3 × 10^?4 m² V^?1 s^?1 and 0.8 × 10^?4 m² V^?1 s^?1, respectively. This scatter was significantly in excess of the estimated experimental error.     

GaAs surface oxidation-related photoluminescence transients

Evidence is presented for the involvement of surface oxidation phenomena in the photoluminescence response obtained on GaAs(110) surfaces. By using high intensity HeNe laser illumination on freshly cleaved (110) n-type GaAs surfaces, room temperature photoluminescence transients are observed having magnitudes determined by excitation intensity. The observed transients are in excess of the steady state photoluminescence signal on surfaces exposed to normal ambient air conditions. A model based on photodesorption and photoadsorption processes, is proposed to explain this phenomenon.     

Generation of THz Radiation by Laser Plasma Interaction

This paper presents the three wave parametric decay process to generate the Terahertz (THz) radiations in magnetized plasma. The pump wave (Laser beam) is considered in the extraordinary mode (x‐mode), propagating perpendicular to the background magnetic field. This pump wave decays into an upper hybrid wave and a THz wave which is in magnetosonic mode. The appropriate expressions for the coupling coefficients of the threewave interaction and THz wave amplitude have been derived. Subsequently, the growth rate of this decay instability is also calculated. Various laser and plasma parameters were optimized and we report efficiency of the order of ～1.4 × 10^–2 for current scheme. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Study of photoexcited plasma in p-doped GaAs beveled structures by micro-Raman spectroscopy

The generation and properties of photoexcited steady-state plasma of electrons and holes in bevel-shaped p-type GaAs structures were studied by micro-Raman spectroscopy. The best correspondence of theoretical calculations with experimental spectra was obtained by using of photoexcited carrier concentration of 1.1 × 10¹⁷ cm⁻³ and mobility 600 and 40 cm²/V s for the photoexcited steady-state electrons and holes, respectively. The analysis of the plasma behavior and its coupling with longitudinal optical phonons at different positions along the bevel shows that the mode resulting from this coupling causes the changes of Raman intensities recorded in frequency positions of transversal (TO) and longitudinal (LO) optical phonon peaks. These changes were further studied and physical interpretation was provided. The dependence of their ratio in the region affected by surface depletion layer can be fitted by linear function very well. The linearity was observed at all studied structures. This behavior on beveled structures prepared by special treatment with very low bevel angle can be used for analysis of the p-type GaAs nanostructures, particularly for measurement and extraction of a doping profile of p-type impurities in GaAs with very high resolution in nm scale.     

Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy

A model describing the emission of photoexcited electrons and holes from an array of InAs quantum dots into the GaAs matrix is suggested. The analytical expression obtained for the emission efficiency takes into account the thermal emission of charge carriers into the GaAs matrix and two-dimensional states of the InAs wetting layer, tunneling and thermally activated tunneling escape, and electron transitions between the quantum-confinement levels in the conduction band of InAs. The temperature dependences of the photosensitivity in the regions of the ground-state and first excited-state optical transitions in InAs/GaAs quantum dots grown by gas-phase epitaxy are investigated experimentally. A number of quantum dot parameters are determined by fitting the results of a theoretical calculation to the experimental data. Good agreement between the theoretical and experimental results is obtained in this way.     

Determination of photoexcited carrier concentration and mobility in GaAs doping superlattices by hall effect measurements

The photo-Hall effect in a new type of periodicp-n doping multilayer structures (superlattices) of GaAs grown by molecular beam epitaxy has been investigated. In these space charge systems electrons and holes are separated in real space. As a consequence, large deviations from thermal equilibrium become quasi-stable. Carrier generation by optical absorption occurs in these doping superlattices even at photon energies far below the gap of the homogeneous semiconductor material. The photoexcitation results in a strong enhancement of the conductivityparallel to the layers and in a substantial photovoltaic response. An increase in carrierconcentration as well as an increase in carriermobility both contribute to the observed enhancement of the conductivity under excitation. The absolute values of changes in free-carrier concentration are very large due to the manyfold active layers of the structure. The measured free-carrier mobilities depend on the population of the multilayer system. A reduction in mobility as compared to bulk material is found to be more pronounced in weakly populated systems. This finding is caused by the larger weight of the boundary regions of the total active layers where the free-carrier density is lower than the density of ionized impurities resulting in an enhanced impurity scattering.     

Electron-acceptor luminescence from a non-Maxwellian distribution of photoexcited electrons in GaAs

Distribution functions are calculated for photoexcited electrons in GaAs, under conditions of continuous, monochromatic excitation. The lattice temperature is taken to be 1.2 K and the excitation intensity such that the density of photoexcited carriers is insufficient for the distribution to be affected by intercarrier scattering. A Boltzmann equation approach is used to take account of the effects of, injection of electrons into the conduction band, at an energy below the threshold for longitudinal optical phonon emission, scattering by acoustic phonons, via the deformation potential and piezoelectric interactions, and recombination. The equation is solved numerically using an iterative technique and the distribution functions are found to differ significantly from a Maxwellian form. Emission spectra due to conduction band to neutral acceptor transitions are derived from the computed distribution functions and are compared with recent experimental results.     

GaAs,InP, and CdSe photovoltage transients

The response of the photovoltage of GaAs, InP, and CdSe to changes in the incident light intensity are examined with the retarding potential electron beam technique. It is demonstrated that the dynamics of the photovoltage transients are sensitive to the surface conditions. This is discussed in terms of a theoretical model which involved the capture of both electrons and holes at the semiconductor surface.     

Photoinduced absorption of THz radiation in semi-insulating GaAs crystal

The influence of optical illumination on transmission of THz radiation through a bulk crystal of semi-insulating GaAs is experimentally studied. It is established that, without additional illumination, absorption of electromagnetic waves with a frequency of about 1 THz in the studied crystal is almost absent. Optical illumination in the spectral range of fundamental absorption of the crystal does not affect the transmission of THz waves. At the same time, if the illumination photon energy is a little below the edge of fundamental absorption, i.e., actually in the transparency region, the transmission of THz radiation drops sharply. At liquid helium temperature, the maximum effect is achieved for the energy of optical photons lower by approximately 30 meV than the crystal band gap. Further shift of the illumination toward lower photon energies is accompanied by almost complete recovery of the transmission. With increasing sample temperature, the spectral range of efficient action of the illumination shifts together with the edge of fundamental absorption toward lower photon energies.     

THz Generation by Optical Rectification and Competition with Other Nonlinear Processes

We present a study of the competition between tera-hertz （THz） generation by optical rectification in （110） ZnTe crystals, two-photon absorption, second harmonic generation and free-carrier absorption. The two-photon nonlinear absorption coefficient, second harmonic generation efficiency and free-carrier absorption coefficient in the THz range are measured independently. The incident pump field is shown to be depleted by two-photon absorption and the THz radiation is shown to be reduced, upon focusing, by free-carrier absorption. The reduction of the generated THz radiation upon tight focusing is explained, provided that one also takes into account diffraction effects from the sub-wavelength THz source.     

GaSe晶体的双光子吸收对太赫兹输出的影响

根据光整流效应,利用超快激光脉冲泵浦GaSe晶体实现了0.2~2.5 THz的宽带太赫兹辐射输出。禁带中的电子在两个800 nm光子的作用下激发到导带中形成自由载流子,进而吸收所产生的太赫兹辐射,最终导致太赫兹的输出随泵浦功率的增加而趋于饱和。为了研究双光子吸收对太赫兹输出的影响,测量了800 nm处的GaSe晶体的双光子吸收系数,结果为 0.165 cm/GW。通过对太赫兹输出实验数据的拟合,得到GaSe晶体中自由载流子对太赫兹输出的吸收截面为1×10^-15 cm²。本文的研究结果可用于优化GaSe晶体在强激光泵浦下的太赫兹转换效率。