底电极原位退火与沉积温度对PZT薄膜性能影响研究

采用磁控溅射工艺,在Pt/Ti底电极上沉积锆钛酸铅(PZT)薄膜,研究了原位退火温度与底电极沉积温度对溅射PZT薄膜结晶取向、微观结构、介电性能、铁电性能及疲劳性能的影响。X射线衍射(XRD)和扫描电子显微镜(SEM)分析结果表明,随着电极沉积温度升高,Pt晶粒尺寸增大,随着退火温度升高,PZT薄膜致密性变差。对室温制备的Pt/Ti底电极进行200 ℃原位退火30 min后,易于促进PZT薄膜沿(100)择优取向,而高温制备或经高温退火处理的Pt/Ti底电极更有利于PZT薄膜的(111)晶向生长。电学性能分析表明,室温制备的Pt/Ti底电极在经200 ℃原位退火30 min后,其PZT薄膜介电性能最优,同时展现较高的剩余极化强度和最小的矫顽场强,经历10⁸次极化翻转后,初始极化下降仅为11％。     

钡铁氧体垂直磁化薄膜的磁光特性研究

本文研究了钡铁氧体垂直磁化膜在垂直磁记录及磁光记录方面应用的基本磁及磁光特性。利用射频磁控溅射方法，采用正份及非正份陶瓷靶制备了钡铁氧体薄膜，在纯氧气氛下经不同退火温度晶化，制成钡铁氧体垂直磁化膜。在优化的溅射参数及最佳的退火工艺下，得到了性能良好的钡铁氧体垂直磁化膜。研究了薄膜的磁光记录应用特性，并讨论了溅射工艺参数及退火工艺对薄膜性能的影响     

DNA生物传感器金薄膜电极的制备及性能

用两种不同溅射工艺制备金薄膜电极。利用扫描电子显微镜、拉曼光谱法和循环伏安法对这两种电极的表面形貌、单链DNA在电极表面的自组装性能和其电化学行为进行了研究。发现不同工艺条件制作的电极性能差异较大;特别是金电极表面有其它金属存在互扩散时,对电极的电化学行为和单链DNA自组装性能具有直接影响。     

射频磁控溅射制备PZT铁电薄膜的工艺研究

在SiO2/Si基片上采用直流对靶溅射技术制备出Pt/Ti底电极;应用射频磁控溅射方法,利用快速热处理(RTA)工艺,制备出了具有良好铁电性能的Pb(Zr0.52Ti0.48)O3铁电薄膜.将样品进行10min快速热退火处理,退火温度700℃.测试分析表明:薄膜厚度比较均匀、表面基本平整、没有裂纹和孔洞、致密性好、薄膜样品的矫顽场强(Ec)为28.6kV/cm,剩余极化强度(Pr)为18.7μC/cm2,自发极化强度(Ps)为37.5μC/cm2,是制备铁电薄膜存储器的优选材料.     

磁控溅射法制备钼薄膜的研究现状

综述了基底表面状态和预热温度,靶材组织和热处理温度,溅射工艺参数(包括时间、功率、气压和靶基距),以及后续退火热处理对磁控溅射制备的Mo薄膜组织及性能的影响。     

直流磁控溅射工艺对ITO薄膜光电性能的影响

采用直流磁控溅射系统在玻璃衬底上制备了氧化铟锡(ITO)薄膜。通过X射线衍射仪、扫描电子显微镜、分光光度计、Hall效应测试系统研究了热退火与原位生长、衬底温度、直流溅射功率对薄膜结构、表面形貌以及光电性能的影响。结果表明:与室温生长并经410℃热退火后的薄膜相比,410℃原位生长可获得光电性能更好的薄膜;随着衬底温度的增加,电阻率单调减小,光学吸收边出现蓝移;在溅射功率为85 W时薄膜的光电性能达到最佳。在衬底温度为580℃、溅射功率为85 W的工艺条件下,可制备出电阻率为1.4×10~(–4)?·cm、可见光范围内平均透过率为93%的光电性能优异的ITO薄膜。     

表面技术在PEMFC电极制备中的应用

运用电镀和表面溅射工艺对聚合物电解质燃料电池膜电极的前表面进行了电催化剂──铂的表面富集。这些方法可以减小铂的用量，提高铂的利用率，并使聚合物电解质燃料电池的工作性能得以改善。     

SmTbFeCo薄膜的制备及磁学性能研究

采用射频磁控溅射法在玻璃基片上成功制得了TbFeCo系列非晶垂直磁化膜,研究了溅射工艺对SmTbFeCo薄膜性能的影响。结果表明:溅射气压为0.5Pa、溅射功率为75W、厚度在100nm条件下所溅射形成的SmTbFeCo薄膜磁性最优。     

溅射时间对ZnO/TiO_2复合薄膜亲水性的影响

采用复合靶射频磁控溅射方法制备了ZnO/TiO_2复合薄膜,对薄膜500℃退火处理2 h。利用XRD和AFM对薄膜的晶体结构和表面微观形貌进行了表征,分析讨论了不同溅射时间下制备的薄膜的亲水性。结果表明:溅射时间为120 min时制备的薄膜经过退火处理后,具有锐钛矿和金红石混晶结构,而且具备最佳的亲水性和光致亲水性。     

溅射功率对原位退火钴酸锂薄膜性能的影响

本文采用射频磁控溅射技术,在高温下制备了原位退火的钴酸锂薄膜,并研究了溅射功率对其性能的影响。结果表明,随着溅射功率的增加,钴酸锂薄膜结晶颗粒长大,生长速率增加,首次放电比容量增大且循环性能提升。200W溅射制备的钴酸锂薄膜首次放电比容量可达47μAh·cm~(-2)μm~(-1),并表现出较好的循环性能。     

The preparation and properties of PZT thin film by sputering method

The ferroelectric PZT thin films were prepared on Pt/Ti/SiO₂/Si substrate by RF sputtering method followed by the rapid thermal annealing. The preparation of the Pt and Ti thin films as bottom electrode, and their influences on the PZT thin films were studied in details. The substrate temperature during sputtering was room temperature; the rapid thermal annealing temperature was 500°C-750°C and the annealing time was 30-70s. The influences of different preparation parameters on the structure and electric properties were studied with X-ray diffraction technique and RT66A Standardized Ferroelectric Test System. The electric properties of the prepared PZT thin film was: P_a=39μc/cm₂, P_r = 9.3 μc/cm², E_c=28KV/mm, ε=300, p=10⁹ω⋅cm.     

Study of Cu-based Al-doped ZnO multilayer thin films with different annealing conditions

AZO/Cu/AZO multilayer thin films produced under different annealing conditions are studied in this paper, to examine the effects of atmosphere and annealing temperature on their optical and electrical properties. The multilayer thin films are prepared by simultaneous RF magnetron sputtering (for AZO) and DC magnetron sputtering (for Cu). The thin films were annealed in a vacuum or an atmosphere of oxygen at temperatures ranging from 100 to 400 °C in steps of 100 °C for 3 min. High-quality multilayer films (at Cu layer thickness of 15 nm) with resistivity of 1.99×10⁻⁵ Ω-cm and maximum optical transmittance of 76.23% were obtained at 400 °C annealing temperature in a vacuum. These results show the films to be good candidates for use as high quality electrodes in various displays applications.     

Influence of sputtering gas pressure on the LiCoO2 thin film cathode post-annealed at 400 °C

LiCoO₂ thin film cathodes were prepared by RF magnetron sputtering and post-annealing. The surface morphological change of the LiCoO₂ thin film wasin-situ measured by hot stage SEM with increasing temperature. The effects of sputtering gas pressure and post-annealing at low temperature (400 °C) were investigated by XRD, AFM, ICP-AES and RBS. The electrochemical characteristics of LiCoO₂ thin films were changed with variation of sputtering gas pressure. A difference of micro-structural evolution after post-annealing was observed, which related to the thin film properties. The electrochemical analysis revealed that the optimal sputtering gas pressure with the low temperature annealing step increases cell capacity and rate capability.     

Effect of annealing and room temperature sputtering power on optoelectronic properties of pure and Al-doped ZnO thin films

Transparent ZnO and Al-doped ZnO (AZO) thin films have been prepared by radio frequency sputtering deposition at room temperature. The optical, electrical, and structural characteristics of the obtained films have been extensively investigated as a function of sputtering and annealing parameters. Spectrophotometry, X-ray diffraction (XRD), atomic force microscopy (AFM), four-point probe and Hall-effect measurements were employed. The ZnO films generally exhibited excellent crystalline properties, while providing a UV cut-off in the absorption spectrum for optical filtration. AZO thin films exhibited an average transparency (larger than 85%) over the visible region of the spectrum, and resistivity of the order of 10^?3 Ω cm was obtained. The carrier concentration and electron mobility values proved to be dependent on the deposition parameters and annealing temperature. The obtained results showed that annealing temperatures higher than 400 °C were not necessary and potentially degraded the electronic properties of the AZO thin films.     

退火工艺对Pb(Zr_(0.55)Ti_(0.45))O_3铁电薄膜结晶取向的影响

用射频磁控溅射法在Pt(111)/Ti/SiO2/Si上成功的制备了Pb(zr0.55Ti0.45)O3(PZT)铁电薄膜,通过传统退火(CFA)和快速退火(RTA)不同的退火方式,获得了(100)和(111)择优取向的铁电薄膜。对薄膜电学特性的测试表明,薄膜的织构对其电学性能有很大影响,(111)取向的薄膜与(100)取向的薄膜相比,剩余极化Pr和矫顽场Ec较大,但抗疲劳特性却较差。     

在ITO玻璃衬底上制备锆钛酸铅铁电薄膜

利用射频反应性溅射沉积技术在掺的Ｓｎ的Ｉｎ２Ｏ３导电透明膜衬底上制备了钙钛矿型Ｐｂ（Ｚｒ,Ｔｉ）Ｏ３（ＰＺＴ）铁电薄膜。研究了沉积参量与热处理工艺对铁电薄膜结构和性能的影响。运用Ｘ射线衍射、Ｘ射线光电子能谱和扫描电镜等技术,分析了薄膜的晶体结构、表面形貌和表面元素化学状态。测量了不同处理条件下薄膜的铁电性能。结果表明：在掺Ｓｎ的Ｉｎ２Ｏ３导电透明膜衬底上可以得到表面无裂纹,化学计量比符合要求的ＰＺ     

Effects of NIR annealing on the characteristics of al-doped ZnO thin films prepared by RF sputtering

Aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by employing radio frequency (RF) sputtering method for transparent conducting oxide applications. For the RF sputtering process, a ZnO:Al₂O₃ (2 wt.%) target was employed. In this paper, the effects of near infrared ray (NIR) annealing technique on the structural, optical, and electrical properties of the AZO thin films have been researched. Experimental results showed that NIR annealing affected the microstructure, electrical resistance, and optical transmittance of the AZO thin films. X-ray diffraction analysis revealed that all films have a hexagonal wurtzite crystal structure with the preferentially c-axis oriented normal to the substrate surface. Optical transmittance spectra of the AZO thin films exhibited transmittance higher than about 80% within the visible wavelength region, and the optical direct bandgap (E_g) of the AZO films was increased with increasing the NIR energy efficiency.     

Atomic force microscopy investigation of the effects of annealing on amorphous carbon nitride films deposited by r.f. magnetron sputtering

Atomic force microscopy is used to study the effects of thermal annealing on the surface topography and the tribological properties of amorphous carbon nitride thin films deposited by r.f. magnetron sputtering. The results show that the surface roughness decreases with increasing annealing temperature. The friction coefficients at the interface between a Si₃N₄ tip and the amorphous carbon nitride films surface decrease with increasing smoothness of the surface.     

Enhancement of thermoelectric performance of N-type Bi2Te3 based thin films via in situ annealing during magnetron sputtering

In this work, n-type Bi₂Te₃ based thin films were prepared in 300 °C via DC magnetron sputtering, and influences of sputtering power and annealing time on thermoelectric properties of films were investigated. The raise of sputtering power brings about the improvement of deposited rate and enhancement of grain size. Taking the consideration that the large-sized grains are to phonon scattering, we determine the medial power of 30 W as the basic technical parameters for the purpose of further optimizing performance through an in situ annealing process. Subsequently, thin-film treated by in situ annealing process acts out an obvious reduction in electrical conductivity attributed to the decrease in carrier concentration. Especially, the film annealed for 40 min shows an enhancement in the Seebeck coefficient and leads to a maximum power factor 0.82 m W m⁻¹ K⁻² at 543 K.     

Influence of N2/Ar gas mixture ratio and annealing on optical properties of SiCBN thin films prepared by rf sputtering

Optical properties of amorphous thin films of silicon carbon boron nitride (Si–C–B–N) obtained by reactive sputtering has been studied. Compositional variations were obtained by changing the nitrogen and argon gas mixture ratio in the sputtering ambient. The effect of gas ratios and annealing on the optical properties was investigated. It was found that the transmittance of the films increases with nitrogen incorporation. Annealing at higher temperatures leads to considerable increase in transmittance. Optical energy gap (Tauc gap) calculated from absorption data is influenced by annealing temperatures and reactive process gas mixture. Changes in optical properties were correlated to the chemical modifications in the films due to annealing, through X-ray photoelectron spectroscopy. Studies reveal that the carbon and nitrogen concentrations in the films are highly sensitive to temperature. Annealing at higher temperatures leads to broken C–N bonds which results in the loss of C and N in the films. This is believed to be the primary cause for variations in optical properties of the films.