Analysis of SAW properties in ZnO/AlxGa1-xN/c-Al2O3 structures.

Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are attractive for high frequency and low-loss surface acoustic wave devices. In this work, ZnO films are deposited on AlxGa1-xN/c-Al2O3 (0 < or = chi < or = 1) substrates using the radio frequency (RF) sputtering technique. In comparison with a single AlxGa1-xN layer deposited on c-Al2O3 with the same total film thickness, a ZnO/AlxGa1-xN/c-Al2O3 multilayer structure provides several advantages, including higher order wave modes with higher velocity and larger electromechanical coupling coefficient (K2). The surface acoustic wave (SAW) velocities and coupling coefficients of the ZnO/AlxGa1-xN/c-Al2O3 structure are tailored as a function of the Al mole percentage in AlxGa1-xN films, and as a function of the ZnO (h1) to AlxGa1-xN (h2) thickness ratio. It is found that a wide thickness-frequency product (hf) region in which coupling is close to its maximum value, K(2)max, can be obtained. The K(2)max of the second order wave mode (h1 = h2) is estimated to be 4.3% for ZnO/GaN/c-Al2O3, and 3.8% for ZnO/AlN/c-Al2O3. The bandwidth of second and third order wave modes, in which the coupling coefficient is within +/- 0.3% of K(2)max, is calculated to be 820 hf for ZnO/GaN/c-Al2O3, and 3620 hf for ZnO/AlN/c-Al2O3. Thus, the hf region in which the coupling coefficient is close to the maximum value broadens with increasing Al content, while K(2)max decreases slightly. When the thickness ratio of AlN to ZnO increases, the K(2)max and hf bandwidth of the second and third higher wave modes increases. The SAW test devices are fabricated and tested. The theoretical and experimental results of velocity dispersion in the ZnO/AlxGa1-xN/c-Al2O3 structures are found to be well matched.     

Gas-sensing properties of sprayed films of (CdO)/sub x/(ZnO)/sub 1-x/ mixed oxide

A novel NO/sub 2/ sensor based on (CdO)/sub x/(ZnO)/sub 1-x/ mixed-oxide thin films deposited by the spray pyrolysis technique is developed. The sensor response to 3-ppm NO/sub 2/ is studied in the range 50/spl deg/C-350/spl deg/C for three different film compositions. The device is also tested for other harmful gases, such as CO (300 ppm) and CH/sub 4/ (3000 ppm). The sensor response to these reducing gases is different at different temperatures varying from the response typical for the p-type semiconductor to that typical for the n-type semiconductor. Satisfactory response to NO/sub 2/ and dynamic behavior at 230/spl deg/C, as well as low resistivity, are observed for the mixed-oxide film with 30% Cd. The response to interfering gas is poor at working temperature (230/spl deg/C). On the basis of this study, a possible sensing mechanism is proposed.     

Mg/sub x/Zn/sub 1-x/O: a new piezoelectric material

Piezoelectric ZnO thin films have been successfully used for multilayer surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices. Magnesium zinc oxide (Mg/sub x/Zn/sub 1-x/O) is a new piezoelectric material, which is formed by alloying ZnO and MgO. Mg/sub x/Zn/sub 1-x/O allows for flexibility in thin film SAW device design, as its piezoelectric properties can be tailored by controlling the Mg composition, as well as by using Mg/sub x/Zn/sub 1-x/O/ZnO multilayer structures. We report the metal-organic chemical vapor deposition (MOCVD) growth, structural characterization and SAW evaluation of piezoelectric Mg/sub x/Zn/sub 1-x/O (x<0.35) thin films grown on (011~2) r-plane sapphire substrates. The primary axis of symmetry, the c-axis, lies on the Mg/sub x/Zn/sub 1-x/O growth plane, resulting in the in-plane anisotropy of piezoelectric properties. SAW test devices for Rayleigh and Love wave modes, propagating parallel and perpendicular to the c-axis, were designed and fabricated. Their SAW properties, including velocity dispersion and piezoelectric coupling, were characterized. It has been found that the acoustic velocity increases, whereas the piezoelectric coupling decreases with increasing Mg composition in piezoelectric Mg/sub x/Zn/sub 1-x/O films.     

Study of x/spl alpha/-Fe/sub 2/O/sub 3/-(1-x)ZrO/sub 2/ solid solution for low-temperature resistive oxygen gas sensors

A noble type of oxygen-sensitive and electrical-conductive material, ZrO/sub 2/-based with /spl alpha/-Fe/sub 2/O/sub 3/ thick-film gas sensor, was investigated for low operating temperature. Amorphous-like solid solutions of x/spl alpha/-Fe/sub 2/O/sub 3/-(1-x)ZrO/sub 2/ powders were derived using the high-energy ball milling technique, and their physical and microstructural properties were characterized from DTA, XRD, TEM, and XPS. The oxygen gas-sensing properties of the screen-printed thick-film gas sensors fabricated from such mechanically-alloyed materials were characterized systematically. Very good sensing properties were obtained with a relative resistance value of 82 in 20% oxygen, and at a low operating temperature of 320/spl deg/C. AC impedance spectra and thermally stimulated current were characterized to investigate the conduction properties of the solid solution, 0.2/spl alpha/-Fe/sub 2/O/sub 3/-0.8ZrO/sub 2/, in air and nitrogen (carrier gas), respectively. It was found that the Arrhenius plots of /spl sigma/T versus 1000/T have two distinct gradients corresponding to two activation energies in the high and low temperature regions. The transition temperature occurs at about 320/spl deg/C that corresponds to an optimal operating temperature of the gas sensor. It is believed that the high oxygen vacancy concentration present in the solid solution, 0.2/spl alpha/-Fe/sub 2/O/sub 3/-0.8ZrO/sub 2/, and the dissociation of the associated oxygen vacancy defect complexes at 320/spl deg/C are the critical factors for the high relative resistance to oxygen gas at low operating temperature.     

Optical and electrical H/sub 2/- and NO/sub 2/-sensing properties of Au/In/sub x/O/sub y/N/sub z/ films

In this paper, we describe the optical and electrical gas-sensing properties of In/sub x/O/sub y/N/sub z/ films with an ultrathin gold promoter overlayer. We have fabricated In/sub x/O/sub y/N/sub z/ films with a nanocrystalline porous structure by RF-sputtering in Ar/N/sub 2/ followed by an annealing process. Gold particles with 20-30-nm diameter have been formed on top of the In/sub x/O/sub y/N/sub z/ films by dc sputtering and an annealing process. We have investigated the optical H/sub 2/and NO/sub 2/-sensing properties (change of absorbance) and also the electrical sensing effect (change of electrical resistance) for these two gases. A combined optical/electrical sensor for H/sub 2//NO/sub 2/ is proposed.     

等离子喷涂ZnO/Al_2O_3涂层微波介电特性研究

采用等离子喷涂工艺,以氧化锌(ZnO)作为吸收剂,氧化铝(Al2O3)为填料,聚乙烯醇(PVA)为粘结剂制备成ZnO/Al2O3复合涂层。分析了复合涂层的相组成及微观结构,研究了氧化锌含量对复合涂层介电性能的影响。结果表明,经喷涂后的涂层中有新相ZnAl2O4生成,其含量随原料中ZnO的含量增加而增加。涂层的密度与涂层中氧化锌含量有关。介电性能测试表明,涂层中ZnO含量的增加使涂层介电常数实部(ε′)及损耗(tanδ)先增加后降低。ZnO摩尔含量为65%时,随频率的增加,涂层介电常数呈降低的趋势。     

Analysis of SAW properties of epitaxial ZnO films grown on R-Al2O3 substrates

ZnO thin films with a high piezoelectric coupling coefficient are widely used for high frequency and low loss surface acoustic wave (SAW) devices when the film is deposited on top of a high acoustic velocity substrate, such as diamond or sapphire. The performance of these devices is critically dependent on the quality of the ZnO films as well as of the interface between ZnO and the substrate. In this paper, we report the studies on piezoelectric properties of epitaxial (112¯0) ZnO thin films grown on R-plane sapphire substrates using metal organic chemical vapor deposition (MOCVD) technique. The c-axis of the ZnO film is in-plane. The ZnO/R-Al₂O₃ interface is atomically sharp. SAW delay lines, aligned parallel to the c-axis, were used to characterize the surface wave velocity, coupling coefficient, and temperature coefficient of frequency as functions of film thickness to wavelength ratio (h/λ). The acoustic wave properties of the material system were calculated using Adler's matrix method, and the devices were simulated using the quasi-static approximation based on Green's function analysis     

The Dielectric Properties of Ba/sub 0.6S/r/sub 0.4/Cr/sub x/Ti/sub 1-x/O/sub 3/Thin Films Prepared by Pulsed Laser Deposition

Ba_0.6Sr_0.4Cr_xTi_1-xO₃ (BSCT) films were prepared by pulsed laser deposition with the value of x varying from 0 mol% to 2.0 mol%. X-ray diffraction analysis detected an increase in the lattice parameters, which could be due to the characteristics of the growth process. Dielectric properties and tunability of the BSCT films were measured. The dissipation factors of the films decreased with increasing Cr-concentration. The highest figure of merit (FOM) value of 33.3 was obtained in 1.0 mol%-doped BSCT film. As a result, the effect of Cr doping is positive.     

O/sub 2/ sensing properties of Zn- and Au-doped Fe/sub 2/O/sub 3/ thin films

Zn- and Au-doped iron oxide thin films have been prepared by liquid phase deposition. These films have been characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Their performance as oxygen gas sensors has been measured. It has been shown that both the Zn and Au dopants increase the oxygen response of the pure iron oxide films. The XRD and SEM results show that Zn changes both the microstructure and the particles size of the sensing layer through the formation of a solid solution with iron oxide. However, the strong increase in sensitivity to oxygen of the Au-doped Fe/sub 2/O/sub 3/ film has been related to the more favorable chemisorption of oxygen on the small gold particles at the interface with the semiconductor oxide. The results show that Au-doped iron oxide sensors are most promising for oxygen gas sensing.     

Effects of pressure and vibration on the thermal decomposition of cubic Ti1-x Al x N, Ti1-x Zr x N, and Zr1-x Al x N coatings: a first-principles study

Thermodynamic properties as well as the miscibility gap (binodal) and spinodal decompositions of the cubic Ti_1-x Al _x N, Ti_1-x Zr _x N, and Zr_1-x Al _x N coating alloys have been computed using first-principles calculations. Herein, the cluster expansion method and especially the special quasirandom structure are employed to describe the disordered alloys. The effects of pressure and lattice vibration on the miscibility gaps and spinodal decompositions of the above alloys have been investigated by means of Helmholtz free energy with the vibrational contribution depicted with the Debye-Grüneisen model. It is found that the application of hydrostatic pressure promotes the isostructural decomposition of Ti_1-x Al _x N, Ti_1-x Zr _x N, and Zr_1-x Al _x N alloys, whereas the vibrational contribution decreases the consolute temperature of the phase separation. Our results indicate that the improved age-hardening behavior of cubic Ti_1-x Al _x N coatings with the addition of Zr arises from the enlarged composition range of binodal and spinodal curves at specified temperatures. Our results are in good agreement with the available experimental data and provide a useful insight into the investigation of age-hardening and characterization of Ti–Al–Zr–N-based coatings for high-temperature applications.     

Preparation, morphology, and gas-sensing behavior of Cr/sub 2-x/Ti/sub x/O/sub 3+z/ thin films on standard silicon wafers

The effect of humidity on chromium titanium oxide (Cr/sub 2-x/Ti/sub x/O/sub 3+z/, CTO), on both baseline resistance and sensitivity, is small compared to SnO/sub 2/. This has been the key to development of thick-film sensors based on CTO, for detection of carbon monoxide and ammonia in synthetic air. Thin-film structures on silicon substrates offer the possibility to use fabricating, bonding and housing equipment and, hence, a low cost gas sensor production is possible. CTO thin-film sensors on silicon substrates use conventional photolithography, sputtering and evaporation techniques. A Ta/Pt resistance layer (25/200-nm thick) for heating the device to its operating temperature and interdigital electrodes are evaporated and structured on a silicon substrate which is covered by a 1-/spl mu/m SiO/sub 2/ insulating layer. The polycrystalline p-type CTO is deposited onto the electrodes by oxidizing reactive sputtering or evaporation of Cr/Ti-sandwich structures. The resulting sensors were characterized by means of energy dispersive X-ray analysis, secondary electron microscopy, and X-ray diffraction pattern. Also, gas responses toward NO/sub 2/, NH/sub 3/, CO and CH/sub 4/, and different humidity, were investigated.     

Comparison of Fe/Al/sub 2/O/sub 3/ and Fe, Co/Al/sub 2/O/sub 3/ catalysts used for production of carbon nanotubes from acetylene by CCVD

Characterization of iron containing alumina supported catalysts was performed by transmission electron microcopy (TEM), Mo/spl uml/ssbauer, and XPS spectroscopy during formation of multiwall carbon nanotubes from acetylene at 1000 K. TEM images showed that carbon fibers (outer diameter is around 20-40 nm) were generated on Fe/Al/sub 2/O/sub 3/ samples while on the bimetallic Fe,Co/Al/sub 2/O/sub 3/ carbon nanotubes with an average diameter of 8-12 nm were formed. XPS spectra revealed that Fe-Co alloy formed during the interaction of Fe,Co/Al/sub 2/O/sub 3/ and acetylene at 1000 K. The formation of the bimetallic alloy was proven by Mo/spl uml/ssbauer spectroscopy as well.     

Interpretation of dielectric properties of thin film Al/Al2O3/Au structures

On the basis of experimental data previously presented, the dielectric properties of thin film Al/Al₂O₃/Au structures were investigated in the frequency range 10^-2−10⁺⁵Hz. The results of the measurements suggested the existence of two laws of dispersion of the complex dielectric susceptibility, each obeying the empirical relation χ′(ω)∝χ≈(ω)∝ωⁿ⁻¹, with n = 0.14 in the low frequency range and n = 0.88 at higher frequencies. In this paper, an equivalent circuit is proposed; it takes into account, firstly, the two laws of dispersion which coexist over the whole temperature (393–505 K) and frequency ranges studied and, secondly, the existence of a thin interfacial zone at the electrode(s), which is less conducting than the bulk of the dielectric.     

Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure

We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements also exhibited that the presence of atomic steps with large lateral step dimension and the surface of samples was smooth. The lateral step sizes are in the range of 100-250 nm. The typical rms values of HEMT structures were found as 0.27, 0.30, and 0.70 nm. HT-AIN buffer layer can have a significant impact on the surface morphology of Al0.3Ga0.7N/Al2O3-HEMT structures.     

A Pt/Ga/sub 2/O/sub 3/-ZnO/SiC Schottky diode-based hydrocarbon gas sensor

In this paper, a novel metal-reactive insulator-silicon carbide device with a catalytic layer for hydrocarbon gas-sensing is presented. This structure, employed as a Schottky diode, utilizes sol-gel prepared Ga/sub 2/O/sub 3/-ZnO layer as the reactive insulator. The sensor has been exposed to propene gas, which lowers the barrier height of the diode. The responses were stable and repeatable at operating temperatures between 300 and 600/spl deg/C. The response to propene in different ambients was examined. The effect of diode bias has been investigated by analyzing the sensors response to various propene concentrations when held at constant currents of 2 and 8 mA.     

Cd/sub 1-x/Mn/sub x/Te semimagnetic semiconductors for ultrafast spintronics and magnetooptics

We present ultrafast optical characterization of Cd/sub 1-x/Mn/sub x/Te single crystals with high (x>0.5-Mn) concentration, studied by magnetooptical sampling and time-resolved magnetization modulation spectroscopy. We have demonstrated that the dynamics of both Mn spins and carrier spins in Cd/sub 1-x/Mn/sub x/Te is extremely fast (in the subpicosecond range), making the nanostructures based on this material very promising for applications in spintronics and magnetooptics.     

大气等离子喷涂Al2O3/ZnO/TiO2涂层微波介电性能的研究

采用高焓大气等离子喷涂技术,以纳米级ZnO、Al2O3和TiO2为原料,通过固相反应制得以ZnAl2O4为主相的陶瓷粉末,加入粘结剂聚乙烯醇(PVA),通过喷雾造粒的方法制备复合吸波陶瓷涂层(简称为AZT涂层).分析了AZT涂层的微观结构和相组成,探究了喷涂功率对AZT涂层微波介电性能的影响.结果表明,AZT涂层对比粉...     

Intrinsic sensitivity of Cd/sub 1-x/Zn/sub x/Te semiconductors for digital radiographic imaging

The intrinsic sensitivity of cadmium zinc telluride (Cd/sub 1-x/Zn/sub x/Te) semiconductor detectors has been experimentally measured, within the X-ray diagnostic energy range. The results of this study indicate that the intrinsic efficiency of Cd/sub 1-x/Zn/sub x/Te can be increased by optimizing geometrical and physical detection parameters such as X-ray irradiation geometry, detector thickness, and applied electric field. These results indicate that Cd/sub 1-x/Zn/sub x/Te is a suitable candidate for digital imaging applications.     

DNA immobilization and SAW response in ZnO nanotips grown on LiNbO/sub 3/ substrates

DNA immobilization enhancement is demonstrated in a structure consisting of ZnO nanotips on 128/spl deg/ Y-cut LiNbO/sub 3/.The ZnO nanotips are grown by metal-organic chemical vapor deposition (MOCVD) on the top of a SiO/sub 2/ layer that is deposited and patterned on the LiNbO/sub 3/ SAW delay path. The effects of ZnO nanotips on the SAW response are investigated. X-ray diffraction and scanning electron microscopy are used to analyze the ZnO nanotips, which are of single crystalline quality, and they are uniformly aligned with their c-axis perpendicular to the substrate surface. The photoluminescence (PL) spectrum of the ZnO nanotips shows strong near bandedge transition with insignificant deep level emission, confirming their good optical property. DNA immobilization enhancement is experimentally validated by radioactive labeling tests and SAW response changes. The ZnO nanotips enhance the DNA immobilization by a factor of 200 compared to ZnO film with flat surface. DNA hybridization with complementary and noncomplementary second strand DNA oligonucleotides is used to study the selective binding of the structure. This device structure possesses the advantages of both traditional SAW sensors and ZnO nanostructures.