Beat-frequency between measurements between C12O216and C12O218lasers

Several beat frequencies in the range below 6 GHz have been measured using a C¹²O2¹⁶laser and a C¹²O2¹⁸laser operating on several pairs of closely spaced lines in the 9.3-μm region.     

In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As abrupt double-heterojunction bipolar transistors

In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As n-p-n abrupt double-heterojunction bipolar transistors grown by molecular beam epitaxy (MBE) have been realized for the first time. DC current gains in excess of 300 have been measured on devices operated in the emitter-up configuration. DC current gains around 50 are obtained on device structures with Be+ implanted extrinsic base regions operated in the emitter-down configuration. The carrier injection and collection behavior of the abrupt InGaAs/InAlAs heterojunctions is discussed.     

Al0.25In0.75P/Al0.48In0.52As/Ga0.35In 0.65As graded channelpseudomorphic HEMT's with high channel-breakdown voltage

A new Al_0.25In_0.75P/Al_0.48In_0.52 As/Ga_0.35In 0_.65As pseudomorphic HEMT where the InAs mole fraction of the Ga_1-xIn_xAs channel was graded (x=0.53→0.65→0.53) is described. The modification of the quantum well channel significantly improved breakdown characteristics. In addition, use of an Al_0.25In_0.75P Schottky layer increased the Schottky barrier height. Devices having 0.5 μm gate-length showed g_m of 520 mS/mm and I_max of 700 mA/mm. The gate-drain (BV_g-d) and source-drain (BV_d-s ) breakdown voltages were as high as -14 and 13 V, respectively. An f_T of 70 GHz and f_max of 90 GHz were obtained     

Ga0.4In0.6As/Al0.55In0.45As pseudomorphic modulation-doped field-effect transistors

High-performance pseudomorphic Ga0.4In0.6As/ Al0.55In0.45As modulation-doped field-effect transistors (MODFET's) grown by MBE on InP have been fabricated and characterized. DC transconductances as high as 271, 227, and 197 mS/mm were obtained at 300K for 1.6-µm and 2.9-µm gate-length enhancement-mode and 2-µm depletion-mode devices, respectively. An average electron velocity as high as 2.36 × 10⁷cm/s has been inferred for the 1.6-µm devices, which is higher than previously reported values for 1-µm gate-length Ga0.47In0.53As/Al0.48In0.52As MODFET's. The higher bandgap Al0.55In0.45As pseudomorphic barrier also offers the advantages of a larger conduction-band discontinuity and a higher Schottky barrier height.     

Some new FIR laser lines of optically pumped12CH316OH,12CH316OD, and12CH3I,12CH3Br,12CD2Cl2absorption spectroscopy of water and acetonitrile

The wavelength, polarization, and output power of several lines of the optically pumped CW FIR¹²CH3¹⁶OH (methanol) and¹²CH3¹⁶OD (1-D deuterated methanol), methyl iodide, methyl bromide, and deuterated methylene chloride lasers have been determined. In addition to lines already reported in the literature, seven strong lines have been observed. Optimum performance of the laser system is achieved by means of an improved coupling of the CO2pump power into the resonator and extraction of the FIR power from the resonator. Measurements on the power absorption coefficient of water using the laser indicate thatalpha(bar{nu})rises to almost 1100 Np ċ cm^-1at 170 cm^-1, and then shows a gradual fall with an increase in frequency. A strong temperature dependence of the 200 cm^-1peak inalpha(bar{nu})is predicted, with a decrease in the frequency of maximum power absorption coefficient with an increase in temperature. The range of measurements for acetonitrile is extended to lower frequencies so as to overlap with those determined from other millimeter wave techniques. For highly power-absorbing liquids,alpha(bar{nu})is estimated to be within ± 5 percent.     

Doubly strainedIn0.41Al0.59As/n+-In0.65Ga0.35As HFET with high breakdown voltage

An In_0.41Al_0.59As/n⁺-In_0.65 Ga_0.35As HFET on InP was designed and fabricated, using the following methodology to enhance device breakdown: a quantum-well channel to introduce electron quantization and increase the effective channel bandgap, a strained In_0.41Al_0.59As insulator, and the elimination of parasitic mesa-sidewall gate leakage. The In_0.65Ga_0.35As channel is optimally doped to N_D=6×10¹⁸ cm^-3. The resulting device (L_g=1.9 μm, W_g =200 μm) has f_t=14.9 GHz, f_max in the range of 85 to 101 GHz, MSG=17.6 dB at 12 GHz V_B=12.8 V, and I_D(max)=302 mA/mm. This structure offers the promise of high-voltage applications at high frequencies on InP     

An In0.53Ga0.47As/Si3N4n-channel inversion mode MISFET

We describe the operation of an n-channel inversion-mode In0.53Ga0.47As MISFET with a Si3N4insulating layer. This device exhibits a transconductance of 2 mS/mm, which represents an order of magnitude improvement over previously reported In0.53Ga0.47As MISFET results.     

Initiation of NF3-H2chemical reactions via CO2laser irradiation of NF4BF4

NF4BF4has been irradiated with a low-power CO2laser to produce reactive species which then initiate reactions in an ambient NF3-H2mixture. The laser-induced decomposition of NF4BF4in vacuum was measured as a function of laser power and energy. The laser-induced decomposition threshold was determined to be 40 mJ, which corresponds to a laser fluence of 20 J/cm². This same value was determined for the initiation threshold of NF3-H2reactions via CO2laser irradiation of NF4BF4. Visible and infrared emissions were observed from initiated NF3-H2mixtures. This radiative technique has attractive features for initiating reactions in solid-gas systems.     

High-frequency submicrometerAl0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors

The high speed scaling of an Al_0.48In_0.52As/In_0.53Ga_0.47 As submicrometer heterostructure bipolar transistor (HBT) is presented. Transistors with emitter dimensions of 0.5×11 and 3.5×3.5 μm² exhibit unity current-gain cutoff frequencies of 63 and 70 GHz, respectively. Emitter current density greater than 3.3×10⁵ A/cm² is demonstrated in a submicrometer AlInAs/InGaAs HBT. The analysis shows that the device speed is limited by the parasitic collector charging time     

Quantum-well Hall devices in Si-delta-dopedAl0.25Ga0.75As/GaAs and pseudomorphic Al0.25Ga0.75As/In0.25Ga0.75As/GaAsheterostructures grown by LP-MOCVD: performance comparisons

Characterized herein are quantum-well Hall devices in Si-delta-doped Al_0.25Ga_0.75As/GaAs and pseudomorphic Al_0.25Ga_0.75As/In_0.25Ga _0.75As/GaAs heterostructures, grown by low-pressure metal organic chemical vapor deposition method. The Si-delta-doping technique has been applied to quantum-well Hall devices for the first time. As a result high electron mobilities of 8100 cm^-2/V·s with a sheet electron density of 1.5×10¹² cm^-2 in Al_0.25Ga_0.75As/In_0.25Ga_0.75 As/GaAs structure and of 6000 cm^-2/V·s with the sheet electron density of 1.2×10¹² cm^-2 in Al_0.25Ga_0.75As/GaAs structure have been achieved at room temperature, respectively. From Hall devices in Al_0.25Ga_0.75As/In_0.25Ga_0.75 As structure, the product sensitivity of 420 V/AT with temperature coefficient of -0.015 %/K has been obtained. This temperature characteristic is one of the best result reported. Additionally, a high signal-to-noise ratio corresponding to the minimum detectable magnetic field of 45 nT at 1 kHz and 75 nT at 100 Hz has been attained. These resolutions are among the best reported results     

An In0.52Al0.48As/n+-In0.53Ga0.47As MISFET with a heavily doped channel

An In0.52Al0.48As/n⁺-In0.53Ga0.47As MIS-type field-effect transistor (FET) with a channel doped at a 7 × 10¹⁷cm^-3level has been fabricated on an InP substrate. A device with a 2-µm channel length has yielded a maximum transconductance of 152 mS/mm,f_{T} = 12.4GHz, andf_{max} = 50GHz. At 10 GHz, the maximum available gain is 17.4 dB. The performance of this device shows that heavily doped channel FET's are very promising for high-frequency operation.     

CO2laser annealing of Si3N4, Nb2O5, and Ta2O5thin-film optical waveguides to achieve scattering loss reduction

Significant reductions in the optical scattering losses of Si3N4, Nb2O5, and Ta2O5waveguides fabricated on SiO2/Si substrates have been measured following CO2laser annealing. The largest improvements were observed for Si3N4waveguides, where waveguide attenuation values of about 6.0 dB/cm before laser annealing were reduced to as low as 0.1 dB/cm afterwards. An improvement of more than an order of magnitude was obtained for a Nb2O5waveguide upon laser annealing, the attenuation coefficient decreasing from 7.4 to 0.6 dB/cm. In the case of one Nb2O5waveguide no improvement was obtained upon laser annealing. The attenuation coefficient of a reactively sputtered Ta2O5waveguide was found to decrease from 1.3 dB/cm before laser annealing to 0.4 dB/cm afterwards. In the case of a thermally oxidized Ta2O5waveguide a small initial improvement in waveguide attenuation was followed by degradation upon further laser annealing.     

Red, Green, and Blue Light Through Cooperative Up-Conversion in Sol-Gel Thin Films Made With Yb0.80La0.15Tb0.05F3 and Yb0.80La0.15Eu0.05F3 Nanoparticles

Silica and zirconium dioxide sol-gel thin films made with Yb_0.80La_0.15Tb_0.05F₃ or Yb _0.80La_0.15Eu_0.05F₃ nanoparticles are reported. Bright blue (413 and 435 nm), green (545 nm), and red (585 and 625 nm) emissions are produced from Tb³⁺ ions through cooperative up-conversion of 980 nm light. Similarly, red (591 and 612 nm) emission is generated from Eu³⁺ ions. These up-convertors may find use in white light sources. The cooperative up-conversion of Yb³⁺-Tb³⁺ ions is more efficient than of Yb³⁺-Eu³⁺ ions because the efficiency of energy transfer from excited Yb³⁺ ions to a Tb ³⁺ ion (0.37) is more than two-times higher than of excited Yb³⁺ ions to a Eu³⁺ ion (0.15), as estimated from the lifetime of excited Yb³⁺ ion. The estimated quantum yields of both Tb³⁺ ion and Eu³⁺ ion emissions are on the order of 40%, and hence are not the cause of the difference in efficiency. This approach does not work for Sm³⁺, Pr³⁺ , and Dy³⁺. Incorporation of the respective Ln³⁺ ions in nanoparticles is crucial, as controls, in which the various Ln³⁺ ions are incorporated directly into the sol-gel, that do not show cooperative up-conversion     

RIE gate-recessed(Al0.3Ga0.7)0.5In0.5P/InGaAsdouble doped-channel FETs using CHF3+BCl3 mixingplasma

BCl₃+CHF₃ gas mixtures for the reactive ion etching process were applied to the gate-recess for fabricating (Al_0.3Ga_0.7)_0.5In_0.5P quaternary heterostructure double doped-channel FET's (D-DCFET), where a high uniformity of Vth was achieved. With the merits of this wide bandgap (Al_0.3Ga_0.7)_0.5In_0.5P layer, microwave power performance of this heterostructure D-DCFET demonstrates a compatible performance for devices fabricated on AlGaAs/InGaAs heterostructures     

Faraday rotation effects of Mn2+-modifiedTb2O3-B2O3 glass in pulsedmagnetic field

We present the dynamical Faraday rotation of a terbium metaborate glass (25Tb₂O₃-75B₂O₃) modified with Mn²⁺ ions using pulsed magnetic fields, which reached up to ~16 T. The superexchange couplings of Tb³⁺-O ^2--Tb³⁺ or Tb³⁺-O^2--Mn²⁺ were magnetooptically observed at lower temperature. In particular, the enhancement of the Faraday rotation effect was obtained at 15 K with repetitional operation of the 16-T pulsed magnetic fields, resulting in the destruction of the dimer couplings. When the operated glasses were heated back to 300 K, only the Tb₂O₃-B₂O₃:Mn²⁺ exhibited a significant change in the Faraday rotation     

Characteristics of strained In0.65Ga0.35As/In0.52Al0.48As HEMT withoptimized transport parameters

The DC and microwave performance of a strained In₀.₆₅Ga₀.₃₅As/In₀ .₅₂A1₀.₄₈As HEMT (high-electron-mobility transistors) is reported. Its design is based on theoretical and experimental studies including low- and high-field transport characterization of heterostructures with different strains. The intrinsic DC transconductance and cutoff frequence of 1.4-μm-long gate HEMTs are 574 mS/mm and 38.6 GHz, respectively. The increased indium (In) composition in the channel enhances the drift velocity from 1.35×10⁷ to 1.55×10⁷ cm/s at 300 K     

Ga2O3(Gd2O3)/InGaAsenhancement-mode n-channel MOSFETs

We have demonstrated the first Ga₂O₃(Gd₂O₃) insulated gate n-channel enhancement-mode In_0.53Ga_0.47As MOSFET's on InP semi-insulating substrate. Ga₂O₃(Gd₂ O₃) was electron beam deposited from a high purity single crystal Ga₅Gd₃O₁₂ source. The source and drain regions of the device were selectively implanted with Si to produce low resistance ohmic contacts. A 0.75-μm gate length device exhibits an extrinsic transconductance of 190 mS/mm, which is an order of magnitude improvement over previously reported enhancement-mode InGaAs MISFETs. The current gain cutoff frequency, f_t, and the maximum frequency of oscillation, f_max, of 7 and 10 GHz were obtained, respectively, for a 0.75×100 μm² gate dimension device at a gate voltage of 3 V and drain voltage of 2 V     

Oxidized Ta2O5/Si3N4dielectric films on poly-crystalline Si for dRAMs

A dielectric film technology characterized by a novel multilayer structure formed by oxidation of Ta₂O₅/Si₃ N₄ films on polysilicon has been developed to realize high-density dRAMs. The dry oxidation of the Ta₂O₅/Si₃N₄ layers was performed at temperatures higher than 900°C. This film has a capacitance per unit area from 5.5 to 6.0 fF/ μm², which is equivalent to that of a 6.0- to 6.5-nm-thick SiO₂. The leakage current at an effective electric field of 5 MV/cm is less than 10^-9 A/cm². Under such an electric field, the extrapolated time to failure for 50% cumulative failure can be as high as 1000 years     

In0.52Al0.48As/In0.53Ga0.47As double-heterojunction p-n-p bipolar transistors grown bymolecular beam epitaxy

P-n-p In_0.52Al_0.48As/In_0.53Ga_0.47 As double-heterojunction bipolar transistors with a p⁺-InAs emitter cap layer grown by molecular-beam epitaxy have been realized and tested. A five-period 15-Å-thick In_0.53Ga_0.47As/InAs superlattice was incorporated between the In_0.53Ga_0.47As and InAs cap layer to smooth out the valence-band discontinuity. Specific contact resistance of 1×10^-5 and 2×10^-6 Ω-cm² were measured for nonalloyed emitter and base contacts, respectively. A maximum common emitter current gain of 70 has been measured for a 1500-Å-thick base transistor at a collector current density of 1.2×10³ A/cm². Typical current gains of devices with 50×50-μm² emitter areas were around 50 with ideality factors of 1.4     

C2F6reactive ion-beam etching of LiNbO3and Nb2O5and their application to optical waveguides

Properties of C2F6(freon 116) reactive ion-beam etching (RIBE) of LiNbO3, Ti-indiffused LiNbO3, and sputter-deposited Nb2O5film on LiNbO3are reported. A maximum differential etching ratio of approximately 5:1 has been measured for LiNbO3and the AZ 1350B Shipley photoresist. We have used this etching technique to fabricate diffraction gratings on both Ti-indiffused LiNbO3and Nb2O5- LiNbO3waveguides with measured throughput efficiencies in excess of 85 percent.