超高真空原子尺度Aux/Si(111)-(7×7)表面吸附的电荷分布测量

原子尺度表面吸附Au原子的物理化学性质对研究纳米器件的制备以及表面催化等起着非常重要的作用.利用调频开尔文探针力显微镜研究了室温下Au在Si(111)-(7×7)表面吸附的电荷分布的特性.首先,利用自制超高真空开尔文探针力显微镜成功得到了原子尺度Au在Si(111)-(7×7)不同吸附位的表面形貌与局域接触电势差(LCPD);其次,通过原子间力谱与电势差分析了Au/Si(111)-(7×7)特定原子位置的原子特性,实现了原子识别;并通过结合差分电荷密度计算解释了Au/Si(111)-(7×7)表面间电荷转移与Au的吸附特性.结果显示,Au原子吸附有单原子和团簇形式.其中,Au团簇以6个原子为一组呈六边形结构吸附于Si(111)-(7×7)的层错半单胞内的3个中心原子位;单个Au原子吸附于非层错半单胞的中心顶戴原子位;同时通过电势差测量得知单个Au原子和Au团簇失去电子呈正电特性.表面差分电荷密度结果显示金在吸附过程中发生电荷转移,失去部分电荷,使得吸附原子位置上的功函数局部减少.在短程力、局域接触势能差和差分电荷密度发生变化的距离范围内,获得了理论和实验之间的合理一致性.     

Si(100)2×1表面上Li原子之间的相互作用与表面结构相变

本文用原子交迭和电子离域-分子轨道方法和原子集团模型,计算了Li原子在Si(100)2×1表面上的吸附能和吸附Li原子之间的相互作用,提出了一种在Li原子的覆盖度将接近于一个单原子层时,随着覆盖度的进一步增加,表面结构连续地从Si(100)-Li(2×1)转变成Si(100)-Li(1×1)的结构相变模型。 关键词：     

Si(100)2×1表面上Li原子之间的相互作用与表面结构相变

本文用原子交迭和电子离域-分子轨道方法和原子集团模型,计算了Li原子在Si(100)2×1表面上的吸附能和吸附Li原子之间的相互作用,提出了一种在Li原子的覆盖度将接近于一个单原子层时,随着覆盖度的进一步增加,表面结构连续地从Si(100)-Li(2×1)转变成Si(100)-Li(1×1)的结构相变模型。     

S钝化GaAs(100)表面的电子特性

用TB-LMTO方法研究单层的S原子在理想的GaAs (100) 表面的化学吸附, 对GaAs(100)表面是Ga-和As-中断两种情况分别进行考虑. 计算了S原子在不同位置的吸附能、吸附体系与清洁的GaAs(100)表面的层投影态密度, 以及电子转移情况. 结果表明, 两种情况下S原子都是桥位吸附最稳定, S-Ga相互作用比S-As稍强, S钝化GaAs(100)表面可以取得明显的钝化效果.     

Al吸附在Pt,Ir和Au的(111)面的低覆盖度研究

应用密度泛函理论,系统研究了Al原子在Pt(111),Ir(111)和Au(111)表面的桥位、顶位、三重面心立方(fcc)洞位和六角密排(hcp)洞位这四个典型位置的吸附情况. 主要计算了三吸附体系的几何结构、平均结合能和差分电荷密度,并系统讨论了相关原子的密立根电荷布居数和投影态密度.研究发现,对于Pt(111)和Ir(111)表面,Al原子在hcp洞位最稳定,但是对于Au(111)表面,Al原子在fcc洞位最稳定. 关键词： 吸附 密度泛函理论 结合能 电子结构     

MoO_3/Si界面区钼掺杂非晶氧化硅层形成的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,通过模拟MoO_3/Si界面反应,研究了MoO_x薄膜沉积中原子、分子的吸附、扩散和成核过程,从原子尺度阐明了缓冲层钼掺杂非晶氧化硅(a-SiO_x(Mo))物质的形成和机理.结果表明,在1500 K温度下, MoO_3/Si界面区由Mo, O, Si三种原子混合,可形成新的稳定的物相.热蒸发沉积初始时, MoO_3中的两个O原子和Si成键更加稳定,同时伴随着电子从Si到O的转移,钝化了硅表面的悬挂键. MoO_3中氧空位的形成能小于SiO_2中氧空位的形成能,使得O原子容易从MoO_3中迁移至Si衬底一侧,从而形成氧化硅层;替位缺陷中, Si替位MoO_3中的Mo的形成能远远大于Mo替位SiO_2中的Si的形成能,使得Mo容易掺杂进入氧化硅中.因此,在晶硅(100)面上沉积MoO_3薄膜时, MoO_3中的O原子先与Si成键,形成氧化硅层,随后部分Mo原子替位氧化硅中的Si原子,最终形成含有钼掺杂的非晶氧化硅层.     

Au(111)表面甲基联二苯丙硫醇盐单层膜的原子结构

利用第一性原理研究了甲基联二苯丙硫醇盐(BP3S)单体、虚拟Au表面BP3S的分子链和单层膜及BP3S/Au(111)吸附系统的原子结构.计算表明BP3S单体呈对称结构,两苯环夹角为35°±10°.首先BP3S单体在虚拟Au(111)表面自组装成稳定的单一分子链.然后在虚拟Au(111)表面,分子链错位排列自组装成两种稳定的单层膜.在虚拟Au(111)-(3~(1/2)×7~(1/2))和Au(111)-(3~(1/2)×13~(1/2))表面,分子链与虚拟表面夹角分别为60°和30°.最后把两种稳定的单层膜吸附在Au(111)表面的四个吸附位,计算表明只有桥位和顶位稳定,且桥位的吸附能比顶位的吸附能低.比较吸附前后BP3S单层膜的结构变化,可知其变化不大,这说明吸附系统的结构参数主要取决于单层膜内的相互作用,衬底对其的影响不大.     

NiTi(110)表面氧原子吸附的第一性原理研究

为了研究给定的NiTi的表面氧化过程,在保持体系中Ni和Ti原子总数相等的条件下,构建了一系列Ti原子在表面反位的c(2×2)-NiTi(110)缺陷体系,并利用第一性原理计算研究了氧原子在各种NiTi(110)反位缺陷体系的吸附行为以及表面形成能.计算结果表明:吸附氧原子的稳定性与表面Ti原子的富集程度有很大的关联性,体系表面Ti原子富集程度越高,氧原子吸附的稳定性越高;当覆盖度较高时,由于氧原子的吸附,可使Ni和Ti原子在表面出现反位.在富氧条件(μ_o≥-9.35 eV)下,氧原子在表面第1层中的全部Ni原子与第3层全部Ti换位的反位缺陷体系上的吸附最稳定,此时随着氧原子的吸附,表面上的Ti原子升高,导致向上膨胀生长形成二氧化钛层,且在其下方形成富Ni层,由此可合理地解释实验上发现NiTi合金氧化形成二氧化钛层的可能原因.     

H原子在δ-Pu(100)面吸附行为的周期性密度泛函理论研究

采用密度泛函理论结合平板周期性模型研究了H原子在δ-Pu(100)面上的吸附行为.方法为广义梯度近似(GGA),同时考虑了自旋极化和无自旋极化两种情况.通过对不同吸附位置的吸附能和平衡几何结构比较发现, 吸附属于较强的化学作用, 心位吸附最稳定,桥位次之,顶位最不稳定.在无自旋极化水平,H原子吸附位距离Pu表面0.063 nm,吸附能-3.16 eV.考虑自旋极化时,H原子位于Pu表面正上方0.060 nm处,吸附能为-2.26 eV.与H配位的Pu原子数目是决定吸附过程的主要因素,配位的Pu原子数目越多,吸附越稳定.Mulliken电荷布局分析表明H和Pu表面的作用主要发生在第一层,另外两层几乎没有影响.H原子在钚表面的吸附造成了钚金属表面功涵的明显增加.     

H,Cl和F原子钝化Cu_2ZnSnS_4(112)表面态的第一性原理计算

采用基于密度泛函理论的第一性原理计算方法系统研究了Cu_2ZnSnS_4体相的晶格结构、能带、态密度及表面重构与H,Cl和F原子在Cu_2ZnSnS_4(112)表面上的吸附和钝化机理.计算结果表明:表面重构出现在以金属原子Cu-Zn-Sn终止的Cu_2ZnSnS_4(112)表面上,并且表面重构使表面发生自钝化;当单个H,Cl或F原子吸附在S原子终止的Cu_2ZnSnS_4(112)表面上时,相比于桥位(bridge)、六方密排(hcp)位和面心立方(fcc)位点,三种原子均在特定的顶位(top)吸附位点表现出最佳稳定性.当覆盖度为0.5 ML时,无论H,Cl还是F原子占据Cu_2ZnSnS_4(112)表面的2个顶位均具有最低的吸附能.以S原子终止的Cu_2ZnSnS_4(112)表面在费米能级附近的电子态主要由价带顶部Cu-3d轨道和S-3p轨道电子贡献,此即表面态.当H,Cl或F原子在表面的覆盖度达0.5 ML时,费米能级附近的表面态降低,其中H原子钝化表面态的效果最佳,Cl原子的效果次之,F原子的效果最差.表面态降低的主要原因在于吸附原子从S原子获得电子致使表面Cu原子和S原子在费米能级处的态密度峰几乎完全消失.     

Chemisorption of Fe on Au-passivated Si（001） surface

The chemisorption of one monolayer of Fe atoms on a Au-passivated Si(001) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method. The Fe adatom chemisorption on an ideal Si(001) surface is also considered for comparison. The chemisorption energy and layer projected density of states for a monolayer of Fe atoms on Au-passivated Si(001) surface are calculated and compared with that of the Fe atoms on an ideal Si(001) surface. The charge transfer is investigated. It is found that the most stable position is at the fourfold hollow site for the adsorbed Fe atoms, which might sit below the Au surface. Therefore there will be a Au－Fe mixed layer at the Fe/Au－Si(100) interface. It is found that the adsorbed Fe atoms cannot sit below the Si surface, indicating that a buffer layer of Au atoms may hinder the intermixing of Fe atoms and Si atoms at the Fe/Au－Si(001) interface effectively, which is in agreement with the experimental results.     

Chemisorption of Au on Si（001） surface

The chemisorption of one monolayer of Au atoms on an ideal Si(001) surface is studied by using the self-consistent tight binding linear muffin-tin orbital method. Energies of the adsorption system of a Au atom on different sites are calculated. It is found that the most stable position is A site (top site) for the adsorbed Au atoms above the Si(001) surface. It is possible for the adsorbed Au atoms to sit below the Si(001) surface at the B_1 site(bridge site), resulting in a Au－Si mixed layer. This is in agreement with the experiment results. The layer projected density of states is calculated and compared with that of the clean surface. The charge transfer is also investigated.     

Adsorption of Ag on Si(1 0 0) surface

The chemisorption of one monolayer Ag atoms on an ideal Si(1 0 0) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method. The adsorption energies (E_ad) of different sites are calculated. It is found that the adsorbed Ag atoms are more favorable on C site (fourfold site) than on any other sites on Si(1 0 0) surface, the polar covalent bond is formed between Ag atom and surface Si atom, a Ag and Si mixed layer does not exist and does form an abrupt interface at the Ag–Si(1 0 0) interface. This is in agreement with the experiment results. The layer-projected density of states is calculated and compared with that of the clean surface. The charge transfer is also investigated. Comparing with the Au/Si(1 0 0) system, the interaction is weaker between Ag and Si than between Au and Si.     

Initial Processes of Sulfur Adsorption on Si(100) Surface

The adsorption of one monolayer S atoms on ideal Si(100) surface is studied by using the self-consistent tight binding linear muffin-tin orbital method. Energies of adsorption systems of S atoms on different sites are calculated.It is found that the adsorbed S atoms are more favorable on B1 site (bridge site) with a distance 0.131 nm above the Si surface. The S, Si mixed layer might exist at S/Si(100) interface. The layer projected density of states are calculated and compared with that of the clean surface. The charge transfers are also investigated.     

Initial Processes of Sulfur Adsorption on Si（100） Surface

The adsorption of one monolayer S atoms on ideal Si（100） surface is studied by using the self-consistent tight binding linear muffon-tin orbital method. Energies of adsorption systems ors atoms on different sites are calculated. It is found that the adsorbed S atoms are more favorable on B1 site （bridge site） with a distance 0.131 nm above the Si surface. The .S, Si mixed layer might exist at S/Si（100） interface. The layer projected density of states are calculated and compared with that of the clean surface. The charge transfers are also investigated.     

Initial Processes of Hydrogen Adsorption on Si（100） Surface

The adsorption of one monolayer H atoms on an ideal Si(100) surface is studied by using the self-consistent tight binding linear muffin-tin orbital method. Energies of adsorption systems of H atoms on different sites are calculated.It is found that the adsorbed H atoms are more favorable on B1 site (bridge site) with a distance 0.056 nm above the Si surface. There does not exist reaction barrier at the Si surface. The layer projected density states are calculated and compared with those of the clean surface. The charge transfers are also investigated.     

Initial Processes of Hydrogen Adsorption on Si(100) Surface

The adsorption of one monolayer H atoms on an ideal Si(100) surface is studied by using the self-consistent tight binding linear muffin-tin orbital method. Energies of adsorption systems of H atoms on different sites are calculated.It is found that the adsorbed H atoms are more favorable on B1 site (bridge site) with a distance 0.056 nm above the Si surface. There does not exist reaction barrier at the Si surface. The layer projected density states are calculated and compared with those of the clean surface. The charge transfers are also investigated.     

A STUDY ON ABSORPTION OF Na ATOMS ON Si(100) 2×1 SURFACES WITH DV-Xα METHOD

The Na absorption on Si(100) 2×1 surface is studied with quantum chemistry molecular cluster method. The calculated results show that the most favourable absorption site of Na is the cave site and the charge transfer of Na atom to Si is large when the Na coverage is smaller than 0.5 monolayer (ML). A Na chain is formed along the cave sites at the 0.5 ML Na coverage, the charge transfer then becomes small. The calculated density of states show that the Na atoms are metallic along the chain. At 1 ML coverage, the Na atoms occupy both the cave and pedestal sites and form a double-layer. There is a charge transfer of 0.5e from each Na atom to the Si surface. The calculated surface energy shows that the saturation absorption of Na on Si surface is 1 ML.     

A STUDY ON ABSORPTION OF Na ATOMS ON Si(100) 2×1 SURFACES WITH DV-Xα METHOD

The Na absorption on Si(100) 2×1 surface is studied with quantum chemistry molecular cluster method. The calculated results show that the most favourable absorption site of Na is the cave site and the charge transfer of Na atom to Si is large when the Na coverage is smaller than 0.5 monolayer (ML). A Na chain is formed along the cave sites at the 0.5 ML Na coverage, the charge transfer then becomes small. The calculated density of states show that the Na atoms are metallic along the chain. At 1 ML coverage, the Na atoms occupy both the cave and pedestal sites and form a double-layer. There is a charge transfer of 0.5e from each Na atom to the Si surface. The calculated surface energy shows that the saturation absorption of Na on Si surface is 1 ML.     

Electronic structure of the SiAu surface

The electronic density of states of the SiAu surface is calculated using a continued fraction technique. The geometric structure of the surface alloy Au₄Si is generated by molecular dynamics. The local density of states on Si atoms in a metallic environment differs qualitatively from the sp spectrum of a typical semiconductor. The calculated densities of p states of Si are in good agreement with recent X-ray spectra of Si in a metallic environment.