平面射频磁控溅射法制备YSZ薄膜及性能

研究了应用射频磁控溅射法在不同基板上制备ＹＳＺ薄膜和工艺条件对其微观结构的影响。结果表明,在清洁的基板上制备的ＹＳＺ 薄膜经６００ ℃以上热处理后,薄膜表面致密均匀,无裂纹,薄膜与基板的结合紧密。薄膜具有较高的电导率,完全可以作为固体电解质使用。     

平面射频磁控制射法制备YSZ薄膜及性能

研究了应用射频磁控溅射尖不同基板上制备ＹＳＺ薄膜和工艺条件对其微观结构的影响。结果表明,在清洁的基板上制备的ＹＳＺ薄膜经６００℃以蝗,薄膜表面致密均,无裂纹,薄膜与基板的结合紧密,薄膜具有较高的电导率,完全可以作为固体电解质使用。     

YSZ薄膜Sol-Gel法制备及其结构分析

本文应用Sol－Gel方法制备了YSZ薄膜,研究了工艺条件对薄膜微观结构的影响.实验发现：基片的选择和清洁、样品的凝胶化速度、热处理过程中的升降温速率等是影响薄膜开裂的几个主要因素．XRD和SEM分析结果表明：应用Sol－Gel方法制备的YSZ薄膜,热处理温度须达800℃以上才能完全排除其中的酸根、有机基因和碳元素,且形成完整的立方相结构．薄膜经500℃、1h热处理后,其表面呈明显的海绵状结构．随着烧结温度的升高,薄膜表面变得致密,气孔明显减少,至1050℃时,薄膜表面光滑、无裂纹、无针孔、圆球形的小颗粒均匀分布．薄膜与衬底的结合紧密,薄膜厚度均匀,膜厚约为1.0μm.     

YSZ薄膜材料的制备及电导性能

检测了用微波等离子体化学气相淀积制备的ＹＳＺ薄膜的光学性能，样品对２３０－９００ｎｍ光的透过率在７２％左右，用交流阻抗谱技术测定了ＹＳＺ薄膜在１００－７００℃的电导性能，以倒扭摆法检测了样品的低频内耗。并分析了ＹＳＺ薄膜中氧空位激活和晶界原子豫引起的电导变化。     

ZrO2薄膜的XPS分析

用射频溅射制备了氧化锆薄膜，用Ｘ光电子能谱技术分析了ＹＳＺ膜的结构，发现低能轰击会引起膜中钇的反优再溅射，造成钇的分布不均匀导致单斜相的出现。     

溅射靶材的应用及发展趋势

由于集成电路、光碟及平面显示器等产业规模越来越大，这些高技术产业对各种超高纯金属及合金溅射靶材的需求量愈来愈多，本文对各种溅射靶的应用情况，市场及发展趋势作简要分析，供靶材生产厂参考。     

YSZ电解质薄膜制备工艺进展

电解质作为固体氧化物燃料电池(SOFC)的关键组件,很大程度上决定着燃料电池性能的优劣和成本的高低.钇稳定氧化锆(YSZ)因其优良的综合性能,一直是SOFC最具竞争力的电解质材料之一,因此开发YSZ电解质工艺已成为人们关注和研究的热点.论述了制备YSZ电解质薄膜的主要方法,并对这些方法进行了评述和展望.     

离子束溅射作用下聚四氟乙烯薄膜的制备方法

在多功能离子束辅助沉积装置上采用交替溅射和冷却聚四氟乙烯靶材的方法制备了薄膜。由ＸＰＳ的结果可知，所得薄膜主要由ＣＦ２结构组成；ＦＴ－ＩＲ的结果表明，所得薄膜由Ｃ－Ｆ的最强吸收峰和聚四氟乙烯的特征吸收峰构成。所得薄膜的这些结构特征与聚四氟乙烯的结构是一致的。     

燃料电池YSZ薄膜凝胶-流延成型的制备研究

结合流延法和凝胶法的优点,形成了水溶液丙烯酰胺体系的凝胶－流延成型方法。以固相含量为５４ｖｏｌ％的ＹＳＺ 体为浆料,利用此方法制备了厚度小、致密度高、气孔少的固体电解质ＺｒＯ２薄片,并从粉体特性、分散剂和ｐＨ值对悬浮体性能的影响、素坯及烧结体密度等多角度探讨了工艺的特点。研究表明与干压法、流延法相比,用凝胶－流延成型的薄片成型的薄片致密度高,气孔少、适合制备固体电解质ＹＳＺ薄膜。     

铁电薄膜的制备及应用技术研究

研究出具有特色的制备铁电薄膜的 sol-gel技术;制备出高质量、高可靠的 PLT、PZT、PYZT、BST”l、PbTiO3、BaTiO3、Bi4Ti3O12多晶铁电薄膜,PLT、PZT和伽里O3异质外延生长铁电薄膜;研制出铁电薄膜热释电单元红外传感器,8元、9元、1O元线列和8X8元阵列;研制出热释电火情探测器和热释电非接触式温度测试仪。     

YSZ纳米粉料流延成型电解质薄膜性能研究

探索了以YSZ纳米粉体为原料,采用流延成型的方法制备YSZ电解质薄膜的工艺过程,具体探讨了不同粒度粉体流延后坯体的性能,结果表明,纳米范围内颗粒粒度粗可以获得致密度较高的坯体。但在烧结过程中,细粒度粉料表现出更好的性能,实验制备的YSZ电解质薄膜的面积比电阻在1123K,比德国D样品大幅度下降。573～1023K的阻抗谱显示出实验制备的YSZ电解质试样的晶粒、晶界和电极处的阻抗都明显降低,综合性能明显优于国外同类产品。流延成型工艺可以获得尺寸为100mm×100mm×0.125mm的8YSZ电解质薄片,这为平板式SOFC在中国的快速发展做好了材料上的准备。     

Morphology and growth of e-beam deposited YSZ thin films

Yttria-stabilized zirconium (YSZ) thin films were grown from the tetragonal phase of ZrO₂ stabilized by 8 wt% of Y₂O₃ (8% of YSZ) ceramic powders using e-beam deposition technique (EB-PVD). The influence of the type of substrate on the microstructure of deposited YSZ thin films was analysed. YSZ thin films (2-3 μm of thickness) were deposited on three different types of substrates: optical quartz (SiO₂), porous Ni-YSZ substrates and Alloy 600 (Fe-Ni-Cr). The dependence of the substrate temperature (from 20 to 600 °C) on the thin film structure and the surface morphology were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was found that (i) the substrate temperature has an influence on the crystallite size, which varied between 12 and 50 nm, (ii) the substrate type has an influence on the growth mechanism of YSZ thin films, and (iii) a bias voltage applied to the substrate during the deposition of thin films has an influence on the densification of YSZ layers.     

应用电泳沉积法制备固体电解质（8YSZ）薄膜

应用电泳沉积法制备钇稳定二氧化锆（8YSZ）薄膜，探索了影响电泳沉积层密度、厚度、粘附性和形貌的诸多因素，确定的最佳工艺操作条件是粉末浓度为100g／1。电场强度为30V／cm，沉积时间为30s。轻微搅拌或不搅拌。经重复电泳沉积-烧结，获得厚为26～56μm，硬度为4．33GPa，在1000℃时O2-电导率为12．2S／m和O2-电导激活能为1．09eV／mol的薄膜。     

Theoretical study of the gas sensitivity and response time of metal oxide thin films

In this paper, based on the gas sensitive mechanism of metal oxide semiconductor thin film, the law of gas diffusion, first order aerodynamics and the relative assumption, we present a simple model for the simulation of the steady state gas sensitivity of metal oxide thin film. Our model provides a general mathematical relationship between the steady state sensitivity and the film thickness. The metal oxide semiconductor thin film is supposed to be formed with a finite number of independent layers. Each layer consists of ideally spherical grains with close-packed structure. The target gas is assumed to affect the inner layers either by penetrating through the grain boundaries or by direct interacting with each layer surface. Besides we propose a model to analyze the thickness dependence of the response time for metal oxide gas-sensing film.     

Ion transport studies on vacuum deposited PbSnI4 thin films

Thin films of the material PbSnI₄ have been deposited by vacuum evaporation. The electrical conductivity, its activation energy and dielectric breakdown strength have been found to be film thickness dependent for films ≤5000 Å. Conductivity is by anionic defect motion with an activation energy of 0.320 eV and ionic transference number of 0.995 at room temperature. The ionic transport has been independently verified by an electrochemical cell potential method with the use of the material in an all thin film solid state battery of the configuration M/PbSnI₄/(AgI,Ag), (M=Sn,Pb), giving OCV values close to the thermodynamic theoretical maximum for the formation of MI₂ at the anode.     

Carbide and nanocomposite thin films in the Ti-Pt-C system

Thin films in the Ti-Pt-C system were deposited by non-reactive, DC-magnetron sputtering. Samples were characterised using X-ray photoelectron spectroscopy, X-ray diffraction, and transmission electron microscopy. A previously not reported metastable solid solution carbide, (Ti_1 − xPt_x)C_y with a Pt/Ti ratio of up to 0.43 was observed. This solid solution phase was present both as single phase in polycrystalline samples, and together with amorphous carbon (a-C) in nanocomposite samples. Annealing of nanocomposite samples leads to the decomposition of the solid solution phase and the formation of a nc-TiC_x/a-C/nc-Pt nanocomposite. Test sensors for automotive gas exhausts manufactured from such a three-phase material suffer from complete oxidation of the coating at 400 °C with no observed sensor activity.     

Ultra-low gas sensing utilizing metal oxide thin films

The structure, functionality and sensing response of metal oxide films is discussed with emphasis on ZnO and InO_x prepared by Aerosol Spray Pyrolysis in ambient atmosphere and DC Magnetron Sputtering techniques under vacuum. Optical, structural and electrical characterization techniques applied for the in-depth analysis of the film properties are described. Sensing response towards ozone is presented utilizing a conventional conductivity technique as well as surface acoustic wave (SAW) structures and devices. It is shown that sensing responses of extremely low ozone concentrations in the range of a few parts per billion (ppb), at room temperature (RT), may be obtained by appropriate control of the film nanostructure. It is also shown that InO_x employed as sensitive layer on top of surface acoustic wave structures can lead to strong frequency shifts for low concentrations of NO₂, H₂ and O₃ gases.     

电泳沉积制备氧化钇稳定的二氧化锆薄膜

采用恒压电泳沉积方法在Ni-YSZ(氧化钇稳定的氧化锆)阳极基体上制备YSZ电解质膜,研究了悬浮体系YSZ含量、外加电压、沉积时间对电泳过程及YSZ膜层质量的影响,结果表明,YSZ含量为20 g/L,沉积电压为10 V,沉积时间5 min时,恒压电泳一次即可得到均匀致密的YSZ膜:膜层与基体结合紧密,厚度约为10 μm.     

改进注浆法制备YSZ电解质薄管的烧结和电性能

用改进注浆法制备出8mol%钇稳定化氧化锆（YSZ）电解质长薄管，研究了YSZ电解质长薄管的烧结工艺，分析了烧结过程和Al2O3掺入量对其致密性的影响，确定了相应的烧结制度，并对所获得的YSZ电解质薄管的电性能进行了研究。研究结果表明：升温速度对YSZ长薄管的性能有着重要影响，坯体中阿拉伯树胶在600℃时被完全烧尽，1400～1500℃的温度范围是烧结的重要阶段，这期间气孔率显著下降，致密性明显提高。加入适量的Al2O3有助于提高YSZ长薄管的致密性。样品的氧离子电导率随烧结密度的增大而提高。利用改进注浆法和上述烧结工艺在1650℃已烧制出相对密度为96.7%、长度为266mm、厚度为0.4～0.9mm的YSZ电解质长薄管。