共查询到20条相似文献，搜索用时 15 毫秒
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采用自行研制的ＬＢ自动提膜装置，制备出大面积（１０×８ｃｍ２）、高质量的ＰＭＭＡ超薄抗蚀剂膜，并将其用于高分辨率铬掩模版的研制。通过电子束曝光，湿法蚀刻，制作了分辨率优于０．５μｍ，特征线宽０．３８μｍ的４（１００ｍｍ）铬掩模版。 相似文献
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Christopher Schutzeichel Nataliya Kiriy Anton Kiriy Brigitte Voit 《Advanced functional materials》2021,31(25):2100105
A typical microstructuring process utilizes photolithographic masks to create arbitrary patterns on silicon substrates in a top-down approach. Herein, a new, bottom-up microstructuring method is reported, which enables the patterning of n-doped silicon substrates to be performed without the need for application of etch-masks or stencils during the etching process. Instead, the structuring process developed herein involves a simple alkaline etching performed under illumination and is remotely controlled by the p-doped micro-sized implants, buried beneath a homogeneous n-doped layer at depths of 0.25 to 1 µm. The microstructuring is realized because the buried implants act upon illumination as micro-sized photovoltaic cells, which generate a flux of electrons and increase the negative surface charge in areas above the implants. The locally increased surface charge causes a local protection of the native silicon oxide layer from alkaline etching, which ultimately leads to the microstructuring of the substrate. In this way, substrates having at their top a thick layer of homogeneously n-doped silicon can be structured, reducing the need for costly, time-consuming photolithography steps. 相似文献
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Tristan Kolb Christian Neuber Marie Krysak Christopher K. Ober Hans‐Werner Schmidt 《Advanced functional materials》2012,22(18):3865-3873
Each film preparation technique affects the physical properties of the resulting coating and thus defines its applicability in modern device construction. In this context solvent based spin coated and solvent‐free physical vapor deposited molecular glass photoresist films are systematically investigated for their dissolution behavior, sensitivity, and overall lithographic performance. These investigations demonstrate that the solvent‐free physical vapor deposition leads to a marked increase in sensitivity. This could be explained by the individual molecule by molecule deposition step producing a more homogeneous distribution of the multicomponent resist system, especially the photoacid generator. In addition, this assumption is supported by former published simulations focusing on aggregate formation within thin films. This work demonstrates that the lithographic sensitivity of multicomponent resist system is an intrinsic parameter to investigate molecular material distribution and indicates that the applied film preparation technique is crucial for the corresponding performance and applicability. 相似文献
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Gianluca Grenci Gioia Della GiustinaAlessandro Pozzato Giovanna BrusatinMassimo Tormen 《Microelectronic Engineering》2011,88(8):1964-1967
We discuss some preliminary results on the development of a new kind of positive tone resist whose peculiarity is an extreme dry etch resistance. This profitable property is obtained by loading and compatibilizing with ceramic nano particles a radiation sensitive sol-gel silica based hybrid organic/inorganic system. With an appropriate choice of the nano particles, the investigated approach is suitable to be adapted and optimized for achieving high selectivity in plasma etching processes of different materials. Here, we specifically demonstrate how the filling with boehmite nano particles (aluminum hydroxide, y-AlO(OH)) confers a much higher selectivity (>60) to the radiation sensitive silica based system when used for the etching of silicon, that show a selectivity <2 if unloaded. The patterning of the new resist was carried out by X-ray lithography while the dry etching tests were made with a fluorine-based chemistry. 相似文献
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准确提取电子散射参数是确保纳米级电子束光刻邻近效应校正精度的关键。采用了一种不基于线宽测量和非线性曲线拟合的电子散射参数提取的方法。邻近效应校正的近似函数采用双高斯分布,其中η的提取是基于设计线宽变化与相应曝光剂量之间的线性关系进行拟合而得;α和β的提取则是分别根据前散射和背散射的范围设计特定的提取版图,并根据电子束邻近效应产生的特殊现象进行参数值的确定。根据此方法提取了150nm厚负性HSQ抗蚀剂层在50kV入射电压下的散射参数,并将其应用于邻近效应校正曝光实验中,很好地克服了电子束邻近效应的影响,验证了此方法提取电子束曝光邻近效应校正参数的实用性及准确性。 相似文献
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电子束抗蚀剂图形结构的倒塌与粘连 总被引：1，自引：0，他引：1
首先从实验现象出发,阐述了纳米级高密度、高深宽比电子抗蚀剂图形结构发生倒塌与粘连的主要几何因素及其关系。除了结构的几何因素外,结合"Beam Sway"模型分析了抗蚀剂微细结构在制作过程中的受力情况。在上述工作的基础上,提出了克服纳米级高密度、高深宽比电子抗蚀剂图形结构倒塌与粘连的相应措施。其中,通过实验验证了超临界CO2干燥技术对于电子束抗蚀剂ZEP520A用于制作周期200nm及150nm、深宽比超过4的光栅图形结构具有良好的效果。 相似文献
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Pinned structures in conjunction with shaped catalysts are used in metal‐assisted chemical etching (MACE) of silicon to induce out‐of‐plane rotational etching. Sub‐micro‐ and nanostructures are fabricated in silicon, which include scooped‐out channels and curved subsurface horns, along with vertically oriented thin metal structures. Five different etching modes induced by catalyst and pinning geometry are identified: 1) fully pinned–no etching, 2) rotation via twist, 3) rotation via delamination, 4) in‐plane bending, and 5) swinging. The rotation angle is roughly controlled through catalyst geometry. The force and pressure experienced by the catalyst are calculated from the deformation of the catalyst and range between 0.5–3.5 μN and 0.5–3.9 MPa, respectively. This is a new, simple method to fabricate 3D, heterogeneous sub‐micro‐ and nanostructures in silicon with high feature fidelity on the order of tens of nanometers while providing a method to measure the forces responsible for catalyst motion during MACE. 相似文献
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Francis P. Gibbons Alex P. G. Robinson Richard E. Palmer Sara Diegoli Mayandithevar Manickam Jon A. Preece 《Advanced functional materials》2008,18(13):1977-1982
Current resist materials cannot simultaneously meet the sensitivity, resolution and line width roughness (LWR) requirements set out by the International Technology Roadmap for Semiconductors (ITRS) for the 32nm node and beyond. Here we present a fullerene‐based, chemically amplified resist system, which demonstrates the potential to fulfill these requirements for next generation lithography. A chemically amplified fullerene resist was prepared, consisting of the derivative MF07‐01, an epoxide crosslinker, and a photoacid generator, such as triarylsulfonium hexafluoroantimonate. The sensitivity of this resist was shown to be between 5 and 10 µC cm?2 at 20 keV for various combinations of post‐application bake and post‐exposure bake conditions. Using 30 keV electron beam exposure, sparse patterns with 15 nm resolution were demonstrated, whilst for dense patterns a half‐pitch of 25 nm could be achieved. The LWR for the densely patterned features is ～4 nm. The etch durability of the fullerene CA system was shown to be comparable to that of SAL601, a common novolac‐based commercial resist, at almost four times that of silicon. 相似文献
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This paper discusses the general deflection system calibration problem that occurs in electron beam lithography and metrology systems.These systems generally have an X, Y stage whose position can be measured, but not set to a high degree of accuracy.The calibration problem involves aligning the coordinate system associated with electron beam deflection system to that of the X, Y stage, and measuring the deflection system sensitivity.Current commercially available examples of these systems include the Cambridge Instruments EBMF-6 electron beam lithography system and the EBMT-5 electron beam metrology system. 相似文献
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提出一种改进的自旋转移矩器件的制备工艺:在电子束曝光形成纳米级图形之后,依次采用离子束刻蚀、带胶绝缘层淀积再正胶剥离的图形转移方法,成功制备了纳米柱状赝自旋阀结构磁性多层膜CoFe/Cu/CoFe/Ta,器件的横向尺寸为140nm×70nm。对该结构进行了电磁学性质的测试:在变化范围为-500～+500Oe(1A/m=4π×10-3 Oe)的外加磁场下,观测到巨磁阻效应;在零外加磁场下,施加垂直于膜平面的电流时,观测到电流诱导的磁化翻转效应,其临界电流密度为108 A/cm2量级。该方法具有工艺步骤少、易于实现的特点,在自旋转移矩器件等纳米级器件的制备中具有广泛的应用前景。 相似文献
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0.13μm集成电路制造中的光刻技术研究现状及展望 总被引：5，自引：0，他引：5
郭宝增 《固体电子学研究与进展》2000,20(3):281-290
近三十年来集成电路的特征尺寸不断缩小 ,主要是由于光刻技术稳定发展而推动的。按美国半导体工业协会的推测 ,在以后的一些年内 ,集成电路的特征尺寸还会不断缩小 ,到 2 0 0 3年 ,0 .13μm集成电路将投入生产。有许多光刻技术可以作为生产这种电路的候选者 ,但这种集成电路最终由哪种光刻技术实现 ,目前还没有确定。文中介绍了其中的几种技术 (即 157nm光学光刻技术、X射线光刻技术和角度限制散射电子束光刻技术 )的研究现状 ,并对它们在 0 .13μm集成电路中应用的可能性进行了简单的评述 相似文献
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Bao‐Yu Zong Gu‐Chang Han Yuan‐Kai Zheng Li‐Hua An Tie Liu Ke‐Bin Li Jin‐Jun Qiu Zai‐Bing Guo Ping Luo Hao‐Min Wang Bo Liu 《Advanced functional materials》2009,19(9):1437-1443
Commercial electron‐beam resists are modified into semimetallic resists by doping with 1–3 nm metal nanoparticles, which improve the resolution, contrast, strength, dry‐etching resistance, and other properties of the resist. With the modified resists, fine resist nanopatterns from electron‐beam lithography are readily converted into 5–50 nm, high‐quality multilayers for metallic nanosensors or nanopatterns via ion‐beam etching. This method solves the problem of the fabrication of fine (<50 nm) metallic nanodevices via pattern transferring. 相似文献
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以HBr作为刻蚀气体,采用ICP金属刻蚀系统对气体流量、刻蚀压力、离子源功率、偏压功率等工艺参数与刻蚀速率、刻蚀选择比和侧壁垂直度的对应关系进行了大量工艺实验。借助理论分析和工艺条件的优化,开发出一套可满足制备侧壁垂直度的纳米尺度多晶硅密排线结构的优化刻蚀工艺技术。实验结果表明:当采用900 W的离子源功率、11 W的偏压功率、25 cm3/min流量的HBr气体和3 mTorr(1 mTorr=0.133 3 Pa)刻蚀压力的工艺条件时,多晶硅与二氧化硅的刻蚀选择比大于100∶1;在保持离子源功率、偏压功率、气体流量不变的条件下,单纯提高反应腔工艺压力则会大幅提高上述选择比值,同时损失多晶硅和二氧化硅的刻蚀均匀性;HBr气体流量的变化在上述功率及反应腔工艺压力的工艺范围内,对多晶硅与二氧化硅的刻蚀选择比和多晶硅刻蚀的形貌特征均无显著影响。采用上述优化的刻蚀工艺条件,配合纳米电子束光刻技术成功得到多晶硅纳米尺度微结构,其最小线宽为40 nm。 相似文献
