AB嵌段型颜料分散剂 (1)WH—1颜料分散剂的合成

本报研究了AB嵌段型颜料分散剂的合成及其对铁白粉颜料的分散能力。研究表明:A段分子的极性、B段分子的结构和分子量对该分散剂的性能具有很大的影响。经该分散剂分散后钛白粉甲苯分散体系只有优异的分散稳定性、并表现出牛顿型流体的性质。     

胶体聚合物造粒用分散剂研究

通过室内正交试验研究出了一种胶体聚合物造粒用分散剂新配方,该分散剂含有"10%工业肥皂(即水溶性硬脂肪酸盐) 60%煤油 30%自来水".同时考察了分散有效期,分散剂对聚合物性能的影响,分散剂经济效益等方面内容.新分散剂要求的造粒机性能、分散剂操作方式、造粒的单位用量与普通的分散剂一样.且在相同条件下造粒更均匀、成颗性更好.     

基于正交实验法的钛白粉硅铝二元包覆工艺研究

利用正交实验法,以六偏磷酸钠为分散剂对金红石型钛白粉进行硅铝二元包覆.研究了包覆过程中搅拌速度、分散剂的用量和包覆剂的用量对钛白粉的影响.采用Nano-zs电位仪、扫描电镜(SEM)、透射电镜(TEM)、能谱仪(EDS)等测试手段,观察了金红石型钛白粉硅铝二元包覆的结构形貌.结果表明:经过包覆的金红石型钛白粉表面能看到连续、均匀的膜状物质.     

聚羧酸型分散剂对水性超细颜料分散体系的作用

应用溶液聚合法,以马来酸酐、甲基丙烯酸甲酯为单体合成了聚羧酸型高分子分散剂MM,研究了MM对颜料红22分散体系的作用.通过对颜料红22进行表面处理,探讨了聚合物结构、聚合物分子量、聚合物用量对颜料分散体系分散稳定性、粒径、粘度的影响,并与普通分散剂进行了对比.实验结果表明:MM用于颜料红表面改性时适宜的特性粘度为26 mL/g;在实验范围内,当分散剂用量为1.3%时,分散体系的分散稳定性最好;马来酸酐的摩尔百分数FMAn为25.5%时,对颜料的分散稳定性较好;在水介质中,与普通分散剂相比,分散剂MM对颜料红22有良好的分散效果,有效地减少了颜料颗粒的絮凝,粒子平均粒径小,表现出优良的分散性能.     

超分散剂对酞菁蓝在树脂中分散性的影响

以原子转移自由基聚合的方法制备的两亲性AB嵌段聚合物作为超分散剂,使用于酞菁蓝-羟基丙烯酸树脂分散体系中,考察它对体系中颜料分散性的影响.分别采用沉降法、扫描电镜分析、黏度测定等方法对酞菁蓝在羟基丙烯酸树脂体系中的分散稳定性进行分析.实验结果表明:该超分散剂能有效地阻止颜料粒子间的絮凝作用,提高颜料分散稳定性.     

阴离子型水性超分散剂对纳米TiO2的表面改性

为制备稳定分散的纳米TiO2水悬浮液,采用自制的阴离子型水性超分散剂对纳米TiO2进行表面改性,使用红外、紫外、扫描电镜、沉降实验、黏度测试等方法对钛白粉的分散性进行表征．结果表明,阴离子型水性超分散剂能成功地包覆于粉体表面;经超分散剂改性后粒子基本无团聚现象,平均粒径在100nm以内;在pH=9时,能使TiO2较好地分散于水溶液中,完全沉降时间达到了1152h以上,分散性能较改性前大大提高．     

柔版显示器用TiO2的制备及其在四氯乙烯中的分散

以硫酸钛为原料,采用Pechini溶胶-凝胶法制备出了适于柔版显示器用的TiO2白色显色颗粒,并用XRD、SEM等技术进行了表征,结果表明所制备的TiO2为球形颗粒,煅烧温度为600℃时获得了100 nm大小的锐钛矿相TiO2,煅烧温度为900℃时则为300 nm金红石相TiO2.采用十六烷基三甲基溴化铵（CTAB）、十二烷基苯磺酸钠（SDBS）、司盘-60（span-60）为分散剂,考察了单一分散剂和复合分散剂的种类与用量对TiO2颗粒在四氯乙烯溶液中的分散率及分散稳定性的影响,结果表明复合分散剂SS及CS的分散率曲线具有离子型表面活性剂出现极大值的特征;相对于单一分散剂,SS、CS分散率取得极大值时分散剂的用量更小.     

不同分散剂对天然橡胶性能的影响

比较了分散剂KT-8A、KT-8B、PEG-2000、PEG-4000、PEG-6000、RDP-100和SDS对天然橡胶(NR)中炭黑分散效果的影响.通过力学性能测试、动态力学性能分析,考察了添加不同分散剂的硫化胶的性能.结果表明:添加分散剂SDS和分散剂RDP-100的硫化胶力学性能和炭黑分散情况更好,拉伸强度分别为30.3 MPa和29.6 MPa;断裂伸长率分别为548%和552%;磨耗体积分别为0.109 cm~3·1.61 km~(-1)和0.130 cm~3·1.61 km~(-1).老化后,拉伸强度变化率分别为-5.86%和-6.21%;断裂伸长率变化率分别为-32.67%和-33.39%;磨耗体积变化率分别为72.17%和72.08%.加入分散剂的混炼胶Payne效应小,滚动阻力较小.     

胶囊破胶剂的介质分散分相法制备研究

针对压裂施工过程中破胶过早的问题,以过硫酸铵为芯材,选用适宜的聚合物为囊衣材料,采用分散分相法制备胶囊破胶剂.通过比较,确定了聚乙烯醇(PVA)和乙烯-醋酸乙烯共聚物(EVA)为较好的囊衣材料,通过正交实验研究了两种胶囊破胶剂的制备工艺.结果表明:搅拌速率、温度、衣材与囊芯的质量比、衣材溶液和分散剂的质量分数对胶囊破胶剂性能有较大影响.制备PVA胶囊破胶剂的最佳条件为:温度25 ℃,搅拌速率270 r/min,衣材与囊芯的质量比2∶ 8,分散剂用量为1%;制备EVA胶囊破胶剂的最佳条件为:温度25 ℃,搅拌速率300 r/min,衣材溶液和分散剂的用量为5%和2%.     

纳米氧化锌抗紫外织物整理剂的分散性能

以纳米氧化锌为抗紫外线屏蔽剂,有机硅-聚丙烯酸酯乳液为粘合剂制备抗紫外织物整理剂.为获得分散性能稳定的纳米氧化锌抗紫外织物整理剂,尝试了利用改性剂进行表面改性、加入硅烷偶联剂与纳米氧化锌和有机聚合物作用、添加分散剂等方法,探讨了影响纳米氧化锌分散性能的因素,确定了最佳制备工艺路线:首先对纳米氧化锌进行表面改性,采用表面沉积法在纳米氧化锌表面沉积部分无机化合物,增加其亲水性;然后利用硅烷偶联剂中2种不同的化学基团分别与纳米氧化锌和有机硅-聚丙烯酸酯相互作用,进一步增加纳米氧化锌的分散稳定性,最后添加适当的分散剂.经过对纯棉和涤纶织物进行抗紫外整理,获得良好的紫外线屏蔽效果.     

浅析英语语音教学中的/n//l/发音错误

在大学英语教学过程中,有关/n/与/l/的发音错误很常见,原因是没有完全掌握它们的发音规则。/n//l/发音规则的相似性造成了/n//l/不分的情况,而且局部方言中这两个音也不作区分,使得/n//l/混淆的情况更加严重。在教学过程中,可以通过重点讲解区分/n/与/l/的发音规则及其区别来避免/n//l/发音错误。本文同时也分析了含糊/l/音的发音错误,通过对/n/与/l/相关的发音错误分析找出大学英语语音教学行之有效的途径:在完全把握单音的发音规则的基础上,进一步强调语调的掌握,使学生拥有良好的语音。     

肼类燃料液滴的亚临界——超临界蒸发/分解燃烧理论

对肼、一甲基肼、偏二甲肼的亚临界－－超临界蒸发／分解燃烧进行了研究,计算了肼类燃料滴在不同压力下液滴温度和蒸发速度的变化历程,计算了蒸发常数、传热数和传质数,其结果和实验数据是吻合的。本文不但考虑了肼类燃料滴的亚临界蒸发／分解燃烧,还考虑到了其超临界蒸发／分解燃烧,并对达到超临界工况时的界限参数进行了计算。     

Reliability of Au/PZT/BIT/p-Si ferroelectric diode

A ferroelectric memory diode that consisted of Au/PZT/BIT/p-Si multilayer configuration was fabricated by pulsed laser deposition (PLD) technique. The reliability issues (I-V characteristics, capacitance retention, fatigue and imprint) were investigated. The I-V curve showed the conventional Schottky diode characteristics with a small current density of - 5.3×10 -10 A/cm2 at a voltage of - 4 V and 6.7×10-8 A/cm2 at a voltage of + 4V, and this characteristic can be maintained below 50℃. The capacitance variety of the ferroelectric diode was only 5 % in 10 hours after withdrawing the applied bias of + 5 V or - 5 V, indicating the diode had good capacitance retention. By applying 100 kHz bipolar pulses of 5 V amplitude, the decay in remanent polarization was only 10% after 109 switching cycles, and meanwhile the increase in coercive field was 12%. After being irradiated for 20 min with a 200 W ultraviolet ray lamp, the remanent polarization and coercive field had both varied, and a voltage shift was obse     

铬/氢/空气/氯体系的焚烧动力学分析

对含铬固体废物焚烧体系进行动力学分析是提出控制六价铬化合物排放措施的基础。本文对铬/氢/空气/氯焚烧体系进行了动力学分析,研究了温度、初始氯含量对产物中六价铬化合物含量的影响。研究表明,六价铬化合物主要以CrO2(OH)2的形式出现,最高含量出现在1700K左右;氯的存在没有导致六价铬化合物CrO2Cl2的大量生成;六价铬化合物CrO2(OH)2的含量随初始氯含量的增大略有下降。建议含铬固体废物实际焚烧过程中,避开1700K左右的温度区域,减少六价铬化合物的排放。     

减小ITO/PTCDA/P-Si/Al型光电探测器暗电流的方法

有机/无机同型异质结是一种新型的光电子元器件,由于它有制备工艺简单,一致性和稳定性好,光电转换效率高,频响特性宽等优点,在光电子领域将有广泛的应用前景.将有机半导体材料苝四甲酸二酐淀积在10 Ω·cm的P-Si无机半导体片上,形成有机/无机同型异质结,然后采用各种工艺处理方法有效的降低了它的暗电流,暗电流减小到了10-9A数量级.对降低暗电流的工艺措施和方法进行了分析和讨论.实验结果还表明,ITO/PTCDA/P-Si/Al同型异质结的暗电流主要成分是耗尽区中载流子的产生-复合电流结的反向饱和电流.     

Low temperature properties of organic-inorganic Ag/ p -CuPc/ n -GaAs/Ag photoelectric sensor

A thin organic film of p-type semiconducting copper phthalocynanine (CuPc) was deposited by vacuum evaporation on an n-type GaAs single-crystal semiconductor substrate. The fabricated Ag/p-CuPc/n-GaAs/Ag sensor was carried through an ageing process to stabilize the parameters. Voltage-current characteristics and photoelectrical response of the sensor were investigated at a wide temperature range of 82 to 350 K. Photoelectric characteristics were measured under nonmodulated filament-lamp illumination. It was observed that such sensor parameters as rectification ratio, threshold voltage, junction, shunt and series resistances, open-circuit voltage and short circuit current are temperature-dependent. It was found that wide-range voltage-current characteristics of the sensor may be described similarly to that of a Schottky barrier diode. Using the experimental data on voltage-current characteristics and absorbance of the CuPc films, the energy-band diagram of the p-CuPc/n-GaAs heterojunction was developed. It was shown that data obtained from simulation of an equivalent circuit of photoelectric sensor agreed with experimental results. Supported by the National Engineering and Scientific Commission of Pakistan     

St/BA/MAA/AA/VAC复合乳液的合成及其应用

采用半连续乳液种子聚合法合成苯乙烯(St)、丙烯酸丁酯(BA)、甲基丙烯酸(MAA)、丙烯酸(AA)、醋酸乙烯酯(VAc)的复合乳液。分析了丙烯酸对乳液电解质性能的影响,引发剂对聚合反应转化率的影响及乳化剂含量对乳液粘度的影响。通过正交试验确定组分的适当配比。该共聚乳液的粘度及固体含量符合要求,稳定性好,性能价格比高。应用表明:用此乳液配制成地毯乳胶,胶膜具有良好的机械性能。     

St/BA/MAA/AA/VAC复合乳液的合成及其应用

采用半连续乳液种子聚合法合成苯乙烯（St）、丙烯酸丁酯（BA）、甲基丙烯酸 （MAA）、丙烯酸（AA）、醋酸乙烯酯 （VAc）的复合乳液.分析了丙烯酸对乳液电解质性能的影响,引发剂对聚合反应转化率的影响及乳化剂含量对乳液粘度的影响.通过正交试验确定组分的适当配比.该共聚乳液的粘度及固体含量符合要求,稳定性好, 性能价格比高.应用表明：用此乳液配制成地毯乳胶,胶膜具有良好的机械性能.     

Modification of LiCo1/3Ni1/3Mn1/3O2 cathode material by CeO2-coating

LiCo_1/3Ni_1/3Mn_1/3O₂ was coated by a layer of 1.0 wt% CeO₂ via sol-gel method. The bared and coated LiMn_1/3Co_1/3Ni_1/3O₂ was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), cyclic voltammogram (CV) and galvanotactic charge-discharge test. The results show that the coating layer has no effect on the crystal structure, only coating on the surface; the 1.0 wt% CeO₂-coated LiCo_1/3Ni_1/3Mn_1/3O₂ exhibits better discharge capacity and cycling performance than the bared LiCo_1/3Ni_1/3Mn_1/3O₂. The discharge capacity of 1.0 wt% CeO₂-coated cathode is 182.5 mAh·g⁻¹ at a current density of 20 mA·g⁻¹, in contrast to 165.8 mAh·g⁻¹of the bared sample. The discharge capacity retention of 1.0 wt% CeO₂-coated sample after 12 cycles reaches 93.2%, in comparison with 86.6% of the bared sample. CV results show that the CeO₂ coating could suppress phase transitions and prevent the surface of cathode material from direct contact with the electrolyte, thus enhance the electrochemical performance of the coated material.     

Memory characteristics of Au/PZT/BIT/p-Si ferroelectric diode

A ferroelectric memory diode consisting of Au/PZT/BIT/p-Si multilayer configuration has been fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the memory characteristics are investigated. The P-E curve of the PZT/BIT/p-Si films system had an asymmetry saturated hysteresis loop with P, = 15 μC/cm2 and Ec = 48 kV/cm, and the decay in remanent polarization was only 10% after 109 switching cycles, meanwhile the increase in coercive field was 12% . The C-V hysteresis loop and the I-V curve showed a memory effect derived from the ferroelectric polarization of PZT/BIT films, and the current density was 6.7 × 10-8 A/cm2 at a voltage of + 4V. Our diode had nonvolatile and nondestructive memory readout operation. There was a read current disparity of 0.05 μA for logic "1" and logic "0" at a read voltage of + 2V, and the stored logical value ("1" or "0") could be read out in 30 min.