RF—PECVD聚合类聚乙烯氧（PEO—like）薄膜及其对血小板吸附性研究

本文采用平板式电容耦合射频(RF,13.56MHz)等离子体源,以乙二醇二甲基醚(Ethylene Glycol DiMethyl Ether)为聚合单体,氩气为辅助气体,在连续与脉冲射频等离子体两种放电模式下合成类聚乙烯氧(PEO-like)功能聚合薄膜.实验研究了等离子体放电参数:等离子体放电功率、工作气压、放电模式(连续或脉冲)和聚合时间等对聚合物表面结构、功能团含量、表面成分性能以及和血小板吸附等影响.利用接触角测定仪(WCA)、傅里叶变换红外光谱(FTIR)、原子力显微镜(AFM)等手段对聚合薄膜的结构、成分和形貌进行细致的分析.同时本文还进行体外细胞培养法,研究了类PEO功能薄膜对富血血小板的吸附,通过倒置显微镜观察细胞黏附的数量和形态变化.得到的结论为:采用RF-PECVD可以在较小功率的连续等离子体放电模式,或较长脉冲间隔的脉冲放电模式下得到结构稳定的PEO生物功能薄膜,所制备的PEO生物功能薄膜具有良好的抗血小板吸附性能.     

采用连续、脉冲等离子体合成低表面能薄膜

采用连续与脉冲射频等离子体合成低表面能薄膜SiCxOy.通过对薄膜性能的表征,发现等离子体放电模式影响聚合膜的化学结构、表面成份、表面能数值大小,认为采用脉冲射频等离子体更易合成低表面能聚合物.     

射频等离子体聚合SiOx薄膜的研究

在射频等离子体放电条件下，以六甲基二硅氧烷（Hexamethyldisilone，HMDSO）为单体，氧气为反应气体，在PET薄膜及载玻片上聚合SiOx薄膜。通过红外光谱（FTIR）分析了工作压强、功率、单体氧气比、聚合时间等对聚合薄膜的结构和沉积速度的影响；通过扫描电子显微镜（SEM）观察了薄膜的表面形貌；通过表面轮廓仪测试了薄膜厚度，计算了沉积速率并对薄膜的均匀性做了研究。在38％恒温水浴箱中进行的水蒸汽阻隔实验表明，PET薄膜的阻隔性能得到有效的提高。     

等离子体聚合胺基功能薄膜及其生物性能研究

本文采用射频(13.56MHz)等离子体技术,以丙烯胺(allylamine)为聚合单体,氩气为辅助气体,进行了合成含胺基生物功能薄膜的研究.利用接触角测定仪(WCA),傅里叶变换红外光谱(FTIR),X-射线光电子能谱(XPS)对功能薄膜的结构、成分进行测试表征.同时,也通过体外细胞培养的方式研究了胺基生物功能薄膜对细胞黏附以及细胞生长的作用,并在倒置显微镜下观察细胞的黏附以及生长情况.研究了不同等离子体参数如功率、工作气压、放电模式、占空比等对聚合功能薄膜表面结构成分、功能团含量以及生物性能的影响.测试结果表明,射频等离子聚合的胺基功能薄膜具有良好的生物相容性,能较好地促进细胞在其表面的黏附和生长.     

射频等离子体放电的宏观参数与PET表面改性的关系

通过射频等离子体放电，采用O2，CF4及CH4／CF4混合气体等离子体对PET表面进行处理。改变射频等离子体放电的宏观参数，如放电时间、放电功率、电极间距离和复合参数，详细地研究了这些参数对PET表面改性的影响。结果表明：碳氟混合气体等离子体在PET表面的沉积速率为正值，在PET表面形成了聚合物；而O2和纯CF4气体的沉积速率为负值，两者在PET表面产生刻蚀效应。增加等离子体放电功率和放电时间，聚合或刻蚀效果更明显；而增加电极间距离和复合参数，聚合或刻蚀效果明显减弱。     

ICP—CVD制备氟化非晶碳（a—C：F）薄膜的研究

本文使用CH2F2为源气体,利用电感耦合等离子体增强化学气相沉积(ICP-CVD)法在不同放电模式(连续或脉冲)、沉积气压、射频功率和位置下制备了a-C∶F薄膜.用原子力显微镜(AFM)观察了薄膜的表面形貌,通过FTIR、XPS对其结构进行了表征.研究结果表明:放电模式、放电气压、射频功率、基底位置均对薄膜的表面粗糙度(RMS)和组成具有重要的影响.在脉冲波模式下,增加放电气压,薄膜RMS值的变化呈现出先降低后升高的变化趋势;基底距离线圈的距离越远,所沉积薄膜的RMS值越小.而在连续波模式下,距离线圈较远的B、C位置薄膜的RMS值却相对较高.增加放电功率导致沉积薄膜的RMS值较小.本文也对CH2F2等离子体进行了发射光谱(OES)诊断研究.结果表明,对比脉冲波模式,连续波放电时等离子体中含碳物种明显减少.结合表征结果和OES结果对薄膜的生长机理进行了探讨.     

高气压脉冲DBD等离子体合成胺基功能薄膜及其性能研究

采用高气压脉冲DBD等离子体,以丙烯胺(allylamine)为聚合单体,氩气为辅助气体,合成胺基薄膜.利用接触角测定仪(WCA),傅立叶变换红外光谱(FTIR),原子力显微镜(AFM)对功能薄膜的结构、成分以及形貌进行测试表征.讨论了不同等离子体放电参数,如:气压、占空比、时间和功率对放电沉积薄膜的影响.结论是:高气压脉冲DBD等离子体放电能够有效地聚合含胺基的薄膜,气压、占空比、时间和功率对沉积薄膜有较大的影响.     

等离子体合成胺基生物功能薄膜的研究

采用高气压脉冲DBD放电等离子体,以丙烯胺为聚合单体,氩气为辅助气体,合成含胺基薄膜.利用各种测量方法对功能薄膜的结构、成分以及表面形貌进行洲试表征.讨论了不同等离子体放电参数对放电沉积薄膜的影响.通过体外细胞培养的方式研究了胺基生物功能薄膜对细胞黏附以及细胞生长的作用.结果表明:高气压脉冲DBD放电等离子体能够有效地聚合含胺基的薄膜,其合成的胺基功能薄膜能较好地促进细胞在其表面的黏附和生长.     

脉冲微波表面波PECVD在有机PET表面沉积DLC薄膜的阻隔性研究

目的 探讨使用脉冲微波表面波等离子体辅助化学气相沉积技术在聚对苯二甲酸乙二醇酯（PET）材料表面沉积类金刚石薄膜作为阻隔层的可行性。方法 以C2H2为单体,氩（Ar）为放电气体,采用脉冲微波表面波等离子体化学气相沉积（PECVD）技术在有机PET材料表面沉积类金刚石（Diamond-like Carbon, DLC）薄膜。研究工艺参数,如脉冲微波放电功率、工作气压、单体与工作气体的体积比等,对DLC薄膜沉积速率和阻隔性能的影响。通过傅里叶变换红外光谱（FT-IR）、原子力显微镜（AFM）、氧气和水蒸气透过率测试仪等对薄膜结构与性能进行表征。结果 DLC薄膜的结构和成分随着等离子体放电工艺参数的变化而改变,造成其阻隔性能也随之发生变化。PET表面沉积纳米级DLC薄膜后,氧气透过率和水蒸气透过率可以分别降至0.58 mL/(m2?d)和2.5 g/(m2?d)。结论 DLC薄膜对氧气和水蒸气都表现出良好的阻隔性,可以应用于食品、药品的阻隔包装。     

高气压脉冲DBD等离子体聚合羧基功能薄膜的研究

在40kHz脉冲介质阻挡放电（DBD）产生等离子体，以丙烯酸为单体，在2000Pa的高气压下，聚合带羧基的功能薄膜。采用接触角测试仪（WCA）、傅里叶红外光谱仪（FTIR）、X光电子能谱（XPS）研究了占空比对沉积薄膜化学结构、表面性能的影响。实验得到，中频脉冲DBD放电在高气压下制备的薄膜官能团含量较高；结果同时表明薄膜的性能受脉冲放电占空比的影响较大，占空比越小，薄膜的化学结构与单体更相近，官能团密度越多，但薄膜的稳定性较差。     

射频等离子体聚合类聚乙烯氧抗菌功能材料的研究

以乙二醇二甲基醚为单体,采用射频等离子体化学气相沉积的方法制备类聚乙烯氧(PEO-like)功能材料.通过傅里叶变换红外光谱(FTIR)、X射线光电子能谱(XPS)和接触角测量仪等对材料的化学成分及表面性能进行了测试,研究等离子体工艺参数对PE0-like薄膜化学成分的影响.材料生物测试的结果表明:制备的PEO-like薄膜能够较好地阻抗血小板的吸附.     

The preparation and characterization of preferred (110) orientation aluminum nitride thin films on Si (100) substrates by pulsed laser deposition

The preferred (110) oriented aluminum nitride (AlN) thin films have been prepared by pulsed laser deposition on p-Si (100) substrates. The films were characterized with X-ray diffraction, Raman spectroscopy, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and atomic force microscope (AFM). The results indicate that the AlN thin films are well-crystallized when laser energy is higher than 300 mJ/puls. The AFM images show that the surface roughness of the deposited AlN thin films gradually increases with increasing laser energy, but the surface morphologies are still very smooth. The crystallinity and morphology of the thin films are found to be strongly dependent on the laser energy.     

脉冲激光沉积溅射工艺对CIGS薄膜成分和结构的影响

采用脉冲激光沉积溅射法在玻璃衬底上制备Cu-In-Ga预制膜,后经硒化、退火处理,得到CIGS薄膜。采用X射线衍射仪表征了薄膜的晶体结构,采用扫描电子显微镜和能量散射谱观察和分析了薄膜的表面形貌和元素成分,采用光电子能谱分析了薄膜表面的化学价态。结果表明,预制膜采用玻璃/In/Cu-Ga的叠层顺序且溅射脉冲数为In靶60000,Cu-Ga靶50000的溅射方式,可制备出沿(112)晶向择优生长的CIGS薄膜。     

Influence of RF power on structural,morphology, electrical,composition and optical properties of Al-doped ZnO films deposited by RF magnetron sputtering

In this study, influence of RF power on the structural, morphology, electrical, composition and optical properties of Al-doped ZnO (ZnO:Al) films deposited by RF magnetron sputtering have been investigated. Films were systematically and carefully investigated by using variety of characterization techniques such as low angle X-ray diffraction, UV–visible spectroscopy, Raman spectroscopy, Hall measurement, X-ray photoelectron spectroscopy, field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy etc. Low angle X-ray diffraction analysis showed that the films are polycrystalline with hexagonal wurtzite structure and which was further confirmed by Raman spectroscopy analysis. Its preferred orientation shifts from (102) to (002) with increase in RF power. The average grain size was found in the range of 15–21 nm over the entire range of RF power studied. The FE-SEM analysis showed that grain size and surface roughness of ZnO:Al films increase in with increase in RF power. The UV–visible spectroscopy analysis revealed that all films exhibit transmittance >85 % in the visible region. The optical band gap increases from 3.37 to 3.85 eV when RF power increased from 75 to 225 W. Hall measurements showed that the minimum resistivity has been achieved for the film deposited at 200 W. The improvement in the electrical properties may attribute to increase in the carrier concentration and Hall mobility. Based on the experimental results, the RF power of 200 W appears to be an optimum sputtering power for the growth of ZnO:Al films. At this optimum sputtering power ZnO:Al films having minimum resistivity (8.61 × 10^?4 Ω-cm), highly optically transparent (~87 %) were obtained at low substrate temperature (60 °C) at moderately high deposition rate (22.5 nm/min). These films can be suitable for the application in the flexible electronic devices such as TCO layer on LEDs, solar cells, TFT-LCDs and touch panels.     

Characterization of pulsed laser deposited zinc oxide

The pulsed laser deposition of zinc oxide films (ZnO) has been studied as a function of laser wavelength, and substrate temperature. Optical emission spectroscopy of the laser produced plume was used to characterize the deposition process. The deposited films were characterized by X-ray diffractometry, Auger electron spectroscopy, and scanning electron microscopy. Highly textured (002) ZnO films deposited at substrate temperatures of 300 °C with laser wavelengths of 532 nm and 248 nm. However, the energy fluence of 248 nm radiation controls the degree of texturing, allowing highly textured films to be deposited at room temperature.     

Hydrophobic CNx thin film growth by inductively-coupled RF plasma enhanced pulsed laser deposition

Interest in carbon nitride as a wear-resistant coating has spurred a large number of attempts at thin film growth using a variety of techniques. Unfortunately, achieving the proper stoichiometry has proven to be surprisingly difficult, and significant effort is typically required to obtain nitrogen contents in excess of 25%. We report the achievement of 38% nitrogen content films deposited on (100) silicon substrates by means of pulsed laser ablation of a graphite target in conjunction with an inductively coupled RF nitrogen plasma source originally designed for molecular beam epitaxy growth of GaN. Quadrupole mass spectroscopy of the plasma source, yields a cracking efficiency of approximately 1.8%, with no significant dependence on RF power. Strong trends in nitrogen incorporation, with both substrate temperature and laser fluence, are observed, the best films being grown at temperatures less than 300°C and fluences of less than 410 mJ/cm². No discernable trend in nitrogen content is observed with either laser repetition rate or the RF power applied to the nitrogen plasma source, and only C---N single bonds are in evidence in FTIR. Contact angle measurements indicate that moderate nitrogen content CN_x films have a slightly hydrophobic character, comparable to pure amorphous carbon films. Coupled with the hardness potential of this material, the hydrophobic behavior makes CN_x a candidate for a number of applications, including alleviating stiction problems in rotating component microelectronic machine (MEMS) systems.     

Structural and optical properties of amorphous oxygenated iron boron nitride thin films produced by reactive co-sputtering

Amorphous oxygenated iron boron nitride (a-FeBN:O) thin films were prepared by reactive radio-frequency (RF) sputtering, from hexagonal boron nitride chips placed on iron target, under a total pressure of a gas mixture of argon and oxygen maintained at 1 Pa. The films were deposited onto silicon and glass substrates, at room temperature. The power of the generator RF was varied from 150 to 350 W. The chemical and structural analyses were investigated using X-ray photoelectron spectroscopy (XPS), energy dispersive of X-ray and X-ray reflectometry (XRR). The optical properties of the films were obtained from the optical transmittance and reflectance measurements in the ultraviolet-visible-near infrared wavelengths range. XPS reveals the presence of boron, nitrogen, iron and oxygen atoms and also the formation of different chemical bonds such as Fe-O, B-N, B-O and the ternary BNO phase. This latter phase is predominant in the deposited films as observed in the B 1s and N 1s core level spectra. As the RF power increases, the contribution of N-B bonds in the as-deposited films decreases. The XRR results show that the mass density of a-FeBN:O thin films increases from 2.6 to 4.12 g/cm³ with increasing the RF power from 150 to 350 W. This behavior is more important for films deposited at RF power higher than 150 W, and has been associated with the enhancement of iron atoms in the film structure. The optical band gap decreases from 3.74 to 3.12 eV with increasing the RF power from 150 to 350 W.     

Photocatalytic properties of Au/TiO2 thin films prepared by RF magnetron co-sputtering

Au/TiO₂ thin films with various Au doping contents were deposited on quartz substrates by radio frequency (RF) magnetron co-sputtering. The as-deposited Au/TiO₂ films were characterized by energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), XRD, and UV-vis techniques. Au doping and UV treatment enhanced the photocatalytic efficiency of TiO₂ thin films. The optimal RF power of the Au target and UV treatment time were 5 W and 1 h, respectively. The enhanced photoactivity of Au(5 W)/TiO₂ thin films with UV treatment is found to result from the increased hydroxyl concentration.     

Effect of deposition temperature on chemical composition and electronic properties of amorphous carbon nitride (a-CNx) thin films grown by plasma assisted pulsed laser deposition

The effect of deposition temperature and nitrogen inclusion in amorphous carbon (a-C) films, deposited by plasma enhanced pulsed laser deposition, on chemical composition and electronic transport has been studied. a-CNx films were deposited on Si (100) by pulsed ArF laser ablation of a graphite target, under N₂ atmosphere. A radiofrequency (13.56 MHz RF) apparatus was used to generate plasma of excited nitrogen species, and its effect on nitrogen uptake and CNx film formation has been studied. Chemical and micro-structural changes associated to increased deposition temperature and nitrogen incorporation were examined by x-ray photoelectron spectroscopy; electrical properties were analyzed by the four-point-probe methods. Temperature-dependent conductivity measurements are tentatively interpreted and discussed in reference to chemical composition.     

Deposition and characterization of SiC and cordierite thin films grown by pulsed laser evaporation

Thin films of SiC and cordierite were deposited on Si (100) by pulsed laser evaporation (PLE) technique at various substrate temperatures. Auger, X-ray photoelectron spectroscopy, and grazing incidence X-ray diffraction were used to investigate the stoichiometry, chemistry, and structure of the PLE-deposited films. The results indicate that properties of SiC films were affected by the substrate temperature. The SiC films grown at 25 °C were amorphous and were a physical mixture of silicon, carbon and very little SiC. The films deposited at 500 and 900 °C substrate temperature were polycrystalline SiC. The as-deposited cordierite films were stoichiometric crystalline.