我不要Me Too

me too就是我也一样。在开发的产品上用这个词是指紧跟竞争对手,开发出功能类似或完全一样的产品,再利用成本控制等手段和竞争对手展开竞争。然而,太多的me too产品会造成企业产品缺乏个性化特征的竞争优势,在本就落后于对手发布产品的前提下,缺乏创新特质能带来高利润。公司整体发展缺乏     

Weiterentwicklung des piezoelektrischen Meßverfahrens

Ohne Zusammenfassung VDI     

Me2-W型钡铁氧体的制备及其电磁性能研究

用溶胶-凝胶法制备了Me2-W型铁氧体（BaMe2Fel602r），考察了Co2＋、Ni2＋、Zn2＋作为Me2组合时材料电磁性能的变化。采用X射线衍射仪（XRD）、扫描电子显微镜（SEM）、振动样品磁强计（VSM）和矢量网络分析仪等手段表征了材料的相组成、形貌，并对其磁性能和微波吸收性能进行了初步研究。研究表明，制得...     

Wetting in the ThO2/Me (Me?=?Ce, Al, U) systems: an example of the liquid phase properties role in reactive wetting

In this study, the wettability properties and chemical reactions in ThO₂ (~90?% dense)/Me (Me?=?Ce, Al, U) were measured. Sessile drop experiments were carried out at 1000, 1150, and 1250?°C for 60?min and the final apparent contact angles measured were 22°?±?2°, 45°?±?2°, and 135°?±?3°, respectively. Chemical reaction at the interface was detected only in the case of ThO₂/Al, where a thick (100–200?μm) C⁴ structure layer containing α-Al₂O₃ and Th-rich Al metallic phases were found. In this study, correlation between the thermodynamic properties of the binary Me–Th melts, chemical reaction at the interfaces, and spreading behavior was demonstrated. The Th–Al liquid solution has a negative departure from ideality and the chemical reaction at the ThO₂/Al interface was massive. The Th–U liquid solution displays a positive departure from ideality and the chemical reaction at the ThO₂/U interface was negligible. Th–Ce liquid solution displays a close to ideal behavior with a small positive departure from ideality, which promoted spreading without significant Th dissolution in the Ce melt and no detectable formation of new oxides at the interface. It is proposed that the mild chemical reaction in the ThO₂/Ce system is ideal for pressure-free infiltration processes. The dominance of the liquid solution properties concerning wettability behavior and chemical reaction at the interface was demonstrated using thermodynamic evaluation.     

Über Änderungen der Strömungsform in Meßdüsen

Stellt man den Versuchsstoff über Normdüsen, insbesondere unter Hinzuziehung neuerer italienischer Arbeiten, zusammen, so zeigt sich unterhalb der Toleranzgrenze eine auffallende Unbestimmtheit der Beziehung zwischen Durchflußzahl und Reynoldsscher Kennziffer, die den α-Kurven der Regeln [8]) widerspricht. Diese Erscheinung soll hier aufgeklärt werden. Wie im besonderen nachgewiesen wird, ist jene Unbestimmtheit bereits in der Theorie als notwendige und unvermeidliche Eigenschaft aller Düsen mit zylindrischem Auslauf enthalten. Die Erscheinung bestimmt infolgedessen die Grenze, hinter der die Düsen nicht mehr ohne weiteres als sichere Meßvorrichtung gelten können, wenn auch praktisch die Unsicherheit den Betrag von 1% der Durchflußzahl in vielen Fällen nicht überschreitet.     

Thermal expansion of YBa2 − x Me x Cu3O7 − δ(Me = Sr, Ca; 0.0 ≤ x ≤ 1.0) solid solutions at elevated temperatures

The thermal expansion of high-temperature superconductors (HTSC) solid solutions YBa_{2 – x} Me _x Cu₃O_{7 –} (Me = Sr, Ca; 0.0 x 1.0) was investigated by dilatometric method in air at 293–1123 K. The temperatures of phase transitions: orthorhombic phase 1 to orthorhombic phase 2 and orthorhombic phase 2 to tetragonal phase were determined. The influence of isovalent substitution of barium by strontium or calcium on the crystal structure, temperature of phase transitions and values of linear thermal expansion coefficient (LTEC, ) of investigated solid solutions was analyzed.     

Zwei neue Meßokulare für die mikroskopische Volum- und Oberflächenmessung

Zusammenfassung Es wurden zwei neue Me?okulare nach dem Prinzip des Punkt-Z?hlverfahrens entwickelt, die eine einfache, schnelle und genaue Volum- bzw. Oberfl?chenbestimmung bei Kollektivmessungen von Feinstrukturen unter dem Mikroskop gestatten. Milteilung aus dem Anatomischen Institut der Universit?t München     

( Ti| Me) ( C,N) / Ni 的润湿性及其价电子结构

运用座滴法研究了( Ti , Me) (C , N) / Ni 体系的润湿性;运用经验电子理论( EET 理论) 计算了多元陶瓷相的价电子结构(VES) , 建立了陶瓷相化学成分与价电子结构的关系, 并建立了价电子结构与接触角的回归关系式。结果表明, 提高温度、延长保温时间均使体系接触角减小; 碳化物的添加使体系接触角进一步减小,碳化物改善润湿性能力的大小依次为: Mo₂C > TaC > WC > VC > NbC。不同碳化物的添加均能导致最强键上共价电子数n_A 增加, 其中添加VC 的影响最为明显, 依次为VC > Mo₂C > NbC > WC > TaC。      

富氮MeNx(Me=Ti,Zr,Hf)薄膜的结构与红外光学性能

用射频反应磁控溅射方法制备了MeNx(Me=Ti、Zr、Hf)薄膜,研究了在富N2条件下不同的N2/Ar流量比对薄膜结构和光学性能的影响.掠角X射线衍射的分析结果表明,所制得的富氮的TiNx薄膜主要由TiN所组成,而富氮的ZrNx、HfNx薄膜则具有非晶态的结构.用分光光度计和傅里叶红外仪对薄膜的光学透过率的测试表明,...     

Hydrogen sorption properties of 90 wt% MgH2–10 wt% MeSi2 (Me = Ti, Cr)

The hydriding/dehydriding characteristics of 90 wt% MgH₂–10 wt% MeSi₂ (Me = Ti, Cr) composites, synthesized by ball milling under argon, were studied by Sievert’s type apparatus and by high-pressure differential scanning calorimetry (HPDSC). The composites have demonstrated similar absorption kinetics and capacity at temperature of 300 °C and a pressure of 1 MPa. They showed fast kinetics and achieved absorption capacity higher than 6 wt%. Slightly higher values for the enthalpy of hydriding and dehydriding were obtained at scanning conditions in the HPDSC for the composite 90 wt% MgH₂–10 wt% CrSi₂ compared to those for the composite with addition of TiSi₂.     

Heat capacity and electrophysical properties of GdMeFe2O5(Me — Li, Na, K, Cs)-type ferrites

The heat capacity of GdMeFe₂O₅(Me — Li, Na, K, Cs) is investigated within the temperature range of 298.15–673 K by a calorimetric method. λ-points are revealed in the C _p ^○ (T) curves at 448 K and 598 K in GdLiFe₂O₅, at 473 K and 573 K in GdNaFe₂O₅, at 448 K and 598 K in GdKFe₂O₅, and at 448 in GdCsFe₂O₅ related to a phase transition of the second kind. The temperature dependencies are calculated for the thermodynamic functions C _p ^○ (T), H ^○(T)-H ^○(298.15), S ^○(T), and Φ**(T). The electrophysical characteristics of the synthesized ferrites are studied within the temperature range of 303–493 K: Effects similar to those found in the C _p ^○ (T) curves are also revealed in the log?(T) and logR (T) curves. The compositions are shown to exhibit a semiconductor-type electrical conductivity. At the T _cond points of the ferrites, the semiconductor-type conductivity changes the metal type one and both the capacities and permittivities vary sharply, and that may be related to a ferroelectric phase transition (the Curie and the Neel points). These effects provide a certain possibility to clarify the nature of the λ-points in the C _p ^○ (T) curves.     

Hydrothermal synthesis of mixed phosphates of neodymium and alkaline metals (Me2O·Nd2O3·4P2O5)

The phase formation in the system Me₂O-Nd₂O₃-P₂O₅-H₂O (where Me = Li, Na, K, Rb and Cs) has been studied under hydrothermal conditions in the temperature and pressure range 300 to 700 C and 0.5 to 600 atm, respectively, using vitreous carbon glass liners. A composition diagram showing the possible fields of crystallization of different phases under equilibrium conditions is given. AB-diagrams of fields of crystallization of different phases in the system investigated are given. These diagrams are in correspondence with the theoretical composition diagram. The advantages and disadvantages of different methods employed in the growth of MeNd-phosphates are discussed. The crystals obtained were characterized by various methods.     

SrCaBi_4Ti_5O_(18)-BiMeO+3(Me=Ga,Mn)高温无铅压电陶瓷的制备及性能

采用固相合成法制备了(1-x)SrCaBi_4Ti_5O_(18-x)BiMeO_3(SCBT-xBMe,Me=Ga,Mn;0≤x≤0.02)铋层状压电陶瓷,研究了BiMeO_3掺杂对SrCaBi_4Ti_5O_(18)系陶瓷微观结构及电性能的影响。结果表明BiMeO_3掺杂并未改变SCBT陶瓷的晶体结构,所有样品均为单一的铋层状结构陶瓷;适量引入BiMeO_3能促使SCBT的晶粒长大且趋于均匀,并有助于SCBT电性能的优化。当BiMeO_3掺杂量为0.005(Me=Ga)和0.02(Me=Mn)时,材料的压电常数d33分别为18pC/N和20pC/N,同时材料具有高的居里温度(Tc=550℃)和低的介电损耗(tanδ0.15%)。此外,SCBTxBMe材料具有良好的压电稳定性,适合于制备高温高频压电器件。     

Effect of the composition on the bandgap width of high-κ MexTiyOz (Me = Hf, Ta, Sr) layers

To explore the possibility of bandgap engineering in Ti-oxide based insulators, we investigated the effect of added cations of another kind (Hf, Ta, Sr) on the optical absorption and photoconductivity of thin titanate films. A bandgap of 3.1-3.4 eV, typical for pure polycrystalline TiO₂, was found in crystallized Sr_xTi_yO_z of different composition as well as in amorphous Ta₂Ti₃O_z. By contrast, the gap width of Hf titanates increases starting from 3.5 eV for 30% Hf/(Hf + Ti) to 4.2 eV for 84% Hf/(Hf + Ti). We suggest that this gap widening is associated with reduced interaction between electron states of neighboring Ti cations as influenced by a wide-gap (E_g = 5.6 eV) HfO₂ sub-network.