共查询到5条相似文献,搜索用时 0 毫秒
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Juan M. Carrillo Author Vitae Guido Torelli Author Vitae Author Vitae José M. Valverde Author Vitae Author Vitae 《Integration, the VLSI Journal》2010,43(3):251-257
Bulk-driven MOS transistors lead to a compact low-voltage/low-power input stage implementation. This paper illustrates the rail-to-rail capability of a single-pair bulk-driven CMOS input stage operated from an extremely low supply voltage. A composite input stage is also introduced to point out some limitations inherent in multiple-pair input stages and carry out performance comparison, based on experimental data obtained in standard 0.35 μm CMOS technology. The performance achieved by the single-pair bulk-driven input stage can be readily extended to a nanoscale process, as lower supply voltages in scaled technologies are expected. Measurements demonstrate the rail-to-rail suitability of the single-pair input stage and show intrinsic advantages of this approach in some amplifier features, such as linearity and common-mode rejection ratio, as compared to the case of the composite solution. 相似文献
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A Bandgap circuit capable of generating a reference voltage of less than 1 V with high PSRR and low temperature sensitivity is proposed. High PSRR achieved by means of an improved current mode regulator which isolates the bandgap voltage from the variations and the noise of the power supply. A vigorous analytical approach is presented to provide a universal design guideline. The analysis unveils the sensitivity of the circuit characteristic to device parameters. The proposed circuit is fabricated in a CMOS technology and operates down to a supply voltage of 1.2 V. The circuit yields 20 ppm/°C of temperature coefficient in typical case and 50 ppm/°C of temperature coefficient in worst case over temperature range −40 to 140°C, 60 ppm/V of supply voltage dependence and 60 dB PSRR at 1 MHz without trimming or extra circuits for the curvature compensation. The entire circuit occupies 0.027 mm2 of die area and consumes from a 1.2 V supply voltage at room temperature. Twenty chips are tested to show the robustness of the topology and the measurement results are compared with Monte Carlo simulation and analysis. 相似文献
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Antonio Lopez Martin Jose Maria Algueta Miguel Lucia Acosta Jaime Ramírez‐Angulo Ramón Gonzalez Carvajal 《ETRI Journal》2011,33(3):393-400
A systematic approach for the design of two‐stage class AB CMOS unity‐gain buffers is proposed. It is based on the inclusion of a class AB operation to class A Miller amplifier topologies in unity‐gain negative feedback by a simple technique that does not modify quiescent currents, supply requirements, noise performance, or static power. Three design examples are fabricated in a 0.5 µm CMOS process. Measurement results show slew rate improvement factors of approximately 100 for the class AB buffers versus their class A counterparts for the same quiescent power consumption (< 200 µW). 相似文献
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An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor is presented.This new approach is based on the assumption that the photon shot noise in image signal is impacted by a potential well structure change of pixel.Experimental results show the measured pinch-off voltage is consistent with theoretical prediction.This technique provides an experimental method to assist the optimization of pixel design in both the photodiode structure and fabrication process for the 4-T CMOS image sen... 相似文献