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1.
A detailed study of the microstructures and superconducting properties of thein situ V3Ga prepared by external gallium diffusion has been carried out. The structure of the final reacted layer has been found to be divided into two regions: an outer layer composed of multiple connected V3Ga globules and an inner layer composed of filamentary V3Ga surrounded by a Cu-Ga matrix. The particle-like V3Ga in the outer region has a slightly higherT c and, hence, higherH c2 than the filamentary V3Ga in the inner region. Therefore, it should be recognized that the measuredl c is a combined contribution from both regions having a different magnetic field dependence ofJ c.l c at high magnetic field is primarily contributed by the outer region. Thel c anisotropy of the tape conductor results from the anisotropic shape of filamentary V3Ga in the inner region. The highest overallJ c obtained is 2×105 A cm–2 at 12.5 T. Further optimization based on the microstructural control, which can be achieved by the appropriate design of the process, may yieldin situ V3Ga composites having substantially improved properties.  相似文献   

2.
A V3Ga-NbTi magnet system for a field of 12 T in 80 mm clear bore is described. The V3Ga and NbTi magnets are connected in series to one power supply. The differences in the materials (NbTi multifilamentary wire and V3Ga bronze processed stranded cable) require special measures for protection during a quench. In the V3Ga magnet no training or degradation was observed. The short sample critical current value was reached in the V3Ga magnet with a reversible active voltage which made it possible to reduce the current without quench.  相似文献   

3.
In the present work, diffusion between vanadium and Cu-20 at.% Ga alloy and that between vanadium and Cu-20 at.% Si alloy were studied. An intermetallic compound, V3Ga, is formed easily by the selective diffusion of gallium from the Cu-Ga alloy to the vanadium. V5Si3 and V3Si are formed also by the selective diffusion of silicon from the Cu-Si alloy to the vanadium. Copper scarcely dissolves either in V3Ga, V5Si3 or V3Si. Copper is not effective for enhancing the formation of V3Si unlike the case of V3Ga. A large super-conducting critical current density, J c, is obtained in the V3Ga formed at temperatures below 700° C while a much smaller J c is obtained in the V3Si formed at 800° C. Changes in J c due to the heat-treatment can be interpreted by the grain growth of the compounds.  相似文献   

4.
S. Shimamoto 《低温学》1974,14(12):641-646
The magnetization of a V3Ga superconducting tape between two successive flux jumps has been experimentally determined by means of search coil measurement in an increasing field perpendicular to the surface. On the basis of these experimental results, an attempt is made to determine theoretically the current induced region as a function of only one parameter across the width, in order to calculate approximately the magnetization.The influence of the superconductor temperature rise on the magnetization is also calculated. The comparison between measured and calculated magnetization shows good agreement except when the current induction front is very close to the tape edge at the beginning of the application of the field.  相似文献   

5.
Studies of growth kinetics of Nb3Sn and V3Ga formation have been carried for mono-filamentary composites of niobium and vandium filaments embedded in bronze wires containing varying concentrations of tin and gallium, respectively. The samples are diffusion reacted at different temperatures and for different lengths of time and the thickness and the microstructure of the resulting A-15 layer are investigated using optical and scanning electron microscopy techniques. The results are discussed in the light of the analytical model previously proposed by the present authors and it is shown that while the rate controlling step for the formation of Nb3Sn is diffusion of tin through the bronze matrix, for V3Ga it is the diffusion of gallium through the grain boundaries of the compound layer. The data are used to calculate the activation energies for Nb3Sn and V3Ga formation.  相似文献   

6.
As an intermediate step leading to the production of V3Ga tapes long enough for magnets of practical size, we have produced by surface diffusion V3Ga tapes ranging in length from 5 to 100 meters. These were wound into single pancakes and their current-carrying capacities were measured in external magnetic fields up to 180 kOe. Results indicate that it should be possible in the near future, to construct V3Ga magnets capable of generating fields as high as 180 kOe, which exceeds by at least 30 kOe the maximum generated by an Nb3Sn magnet. A further study in the area of stability, however, would be helpful.  相似文献   

7.
Single core V3Ga superconducting wires have been fabricated into two configurations following the composite process. The first configuration is a normal one in which the composite consists of a pure vanadium core in a Cu-Ga (19 at%) matrix. In the second configuration the same matrix has been used as a core inside a pure vanadium sleeve. Wires have also been fabricated in these two configurations by adding gallium and magnesium elements to pure vanadium and Cu-Ga matrix respectively. A simultaneous addition of gallium to vanadium and magnesium to the Cu-Ga (19 at %) matrix has been found to raise the critical current density, Jc of the V3Ga appreciably in conformity with earlier results reported on the composite processed V3Ga tapes using identical contents of additional elements. The configuration-2 leads to a more uniform V3Ga layer formation and a faster growth rate thus increasing the overall critical current density still further. A value of Jc of ~ 1.6 × 106 at 4.2 K and 9T has been obtained for single core wires prepared in configuration-2 and using magnesium and gallium additional elements.  相似文献   

8.
V.M Pan 《低温学》1981,21(9):547-554
Structurally multiconnected filamentary A15 V3Ga and Nb3Al in their respective bcc phases are formed by heat treating as quenched and deformed supersaturated bcc phases. It was found that Tc of these compounds are ~14 and ~12 K V3Ga and Nb3Al, respectively, after appropriate heat treatments. The kinetics and morphology of precipitation of these compounds as well as the critical current density are presented.  相似文献   

9.
Accurate low-temperature specific heat measurements, together with structural investigations, have been performed in V-Ga alloys with 18–32% Ga and V-Si alloys with 20–27% Si. Calculations of the temperature dependence of the normal electronic specific heat are presented for different band models. The comparison with experiment suggests that very low degeneracy temperatures are indeed characteristic of both V3Ga and V3Si.This work has been supported by the Fonds National Suisse de la Recherche Scientifique.  相似文献   

10.
Critical field curves and quenching curves for the A15 (-W) type compounds Nb3Sn, V3Si, and V3Ga have been measured. The critical field curves have been extrapolated to zero temperature, and the following zero upper critical fields have been found: 245 kOe for Nb3Sn, 235 kOe for V3Si, and 208 kOe for V3Ga. These values lie between the upper and lower limits given by theories for critical fields not taking into account spin-orbit scattering. Critical currents for Nb3Sn samples with small admixtures of zirconium are higher than for corresponding samples without zirconium. Special samples of Nb3Sn multiwires 522 have still high critical currents in the high-field region up to 230 kOe.On leave of absence from the University of Giessen.Supported by the U.S. Air Force Office of Scientific Research.  相似文献   

11.
It is shown by low-temperature heat capacity measurements using ac technique that martensitic transformation in small samples of V3Ga and Nb3A1 can be prevented by covering them nearly completely with copper plating.  相似文献   

12.
The site symmetry of P doped ZnSe is analysed in detail here, as the recent experiments suggest two possible symmetriesT d andC 3V. The reduction toC 3V is attributed to the presence of natural impurity, Ga. Our calculations based on molecular model and Green’s functions suggest that the symmetryC 3V is possible with ZnSe : P when Jahn Teller distortion of about ~ 0.2 Å (towards one of Zn atom) is assumed. This has been supported by other experiments.  相似文献   

13.
Pulsed magnetic field loss measurements have been performed on special V3Ga filament superconductors, which are known to have very high critical current densities, and on a NB3Sn filament superconductor.The dependence of the hysteresis losses on the diffusion heat treatment parameters for the V3Ga layer formation is reported. To analyse the results, the hysteresis losses of hollow superconducting filaments in parallel and perpendicular magnetic fields were calculated.From E.J. Kramer's theory of flux pinning we postulate that, for a given material, upper and lower intrinsic limits of the hysteresis losses are due to the flux line shearing effect. A part of the results was presented at the ICEC 7.  相似文献   

14.
M.R. Daniel 《低温学》1976,16(12):727-729
Applying a phenomenological theory of flux pinning developed by Kramer,1 where the ultimate critical current density (Jc) of a superconductor is determined by plastic shearing of the flux lattice, approximate upper limits are put on Jc for Nb3Ge, Nb3Sn, and V3Ga. At 4.2 K and for magnetic fields H < 100 kG, the Jc of V3Ga is greater than that of either Nb3Ge or Nb3Sn and Nb3Sn has somewhat higher values than Nb3Ge. Above 200 kG Nb3Ge has the highest Jc due to its having the highest upper critical field and at 14 K or above it probably has the largest Jc at all field values.  相似文献   

15.
《低温学》1987,27(7):361-378
This Paper reviews the present state-of-the-art of preparing multifilamentary A-15 superconductors. The most common types, Nb3Sn and V3Ga, are presently produced by the so-called bronze process. The highest Jc (overall) = 3.5 × 104 cm−2 (at 15 T and 4.2 K), obtained for bronze processed Nb3Sn composites through Ti addition, has pushed the useful limit of this material from 12 to 16 T. Similarly a Jc of 1 × 105 A cm−2 (at 20 T and 4.2 K) for the A-15 V3Ga has been attained through elemental additions to the core and the bronze matrix. To circumvent the problem of work-hardening of the bronze, several variations of the bronze process such as the internal tin method, the Nb tube method, the ECN method and jelly roll method have also been upgraded to commercial scale. Composites of Nb3Sn and V3Ga have been recently produced successfully on a laboratory scale following the so called in situ technique. These composites not only have a superior Jc value but display improved strain tolerance due to the ultrafine nature of the filaments formed in situ. In situ filamentary A-15 composites with high Jc values have also been produced by following the powder metallurgy technique. The infiltration technique has been found useful for producing high field Nb3(Al, Ge), Nb3(Al, Si) and Nb3Sn composite conductors with high εirr. Superior materials such as Nb3Al, Nb3Ga and Nb3(Al,Ge) with high Jc performance have been synthesized using the laser beam technique. Nb3Ge tapes with Tc = 21 K and Jc = 105 A cm−2 (at 18 T and 4.2 K) have been successfully produced on a laboratory scale by following the CVD technique. Thus, there are several available options from which to choose a technique for fabricating filamentary composites of ubiquitous Nb3Sn and V3Ga. New techniques for fabricating superior materials like Nb3Al, Nb3Ga, Nb3Ge and Nb3(Al, Ge) also seem to be at an advanced stage of development.  相似文献   

16.
The formation of highT c Nb3Al, Nb3Ga, Nb3Ge and V3 (Ga, Si) has been attempted by solid state diffusion from ternary bronzes. None of the desired compounds were formed. The results are explained in terms of the thermodynamics of compound formation by solid state diffusion. Diffusion follows two-phase tie-lines; only those phases which lie on tie-line routes, and which are the most stable as defined by the stability index, are able to form. The addition of the third element to the bronze in general has little significant effect. There is no evidence to indicate that highT c Nb3Al, Nb3Ga or Nb3Ge can be produced by solid state reaction.Work performed under the auspices of the US Department of Energy.  相似文献   

17.
This paper summarizes our research on newly-developed multifilamentary V3Ga and Nb3Sn compound superconductors, including their design, processing, and characteristics such as mechanical and superconducting properties, and coil performance.  相似文献   

18.
Multilayer Li1.075Nb0.625Ti0.45O3 (LNT) ceramics for low temperature co-fired ceramic (LTCC) application were prepared by aqueous tape casting. The rheological test indicated that the aqueous slurries exhibited a typical shear-thinning behavior without thixotropy suitable for tape casting process. The green tapes with 2 wt% V2O5 addition have satisfactory mechanical properties. Scanning electron microscopy studies revealed that the green tapes have a smooth defect-free surface and that the sintered LNT ceramics have a fine grain microstructure with a uniform grain size. Therefore, aqueous tape casting is suitable for the manufacture of high performance multilayer LNT ceramics. Silver inner-electrode was sintered with LNT tapes at 900 °C, and no reaction been observed between LNT ceramic and sliver layers. The addition of V2O5 does not induce much degradation on the microwave dielectric properties. In the case of 2 wt% V2O5 addition, the ceramics show good microwave dielectric properties of ε r  = 65, Q × f = 6,350 GHz. It represents that LNT ceramics could be promising for multilayer LTCC application.  相似文献   

19.
The composition dependence of the superconducting critical temperature T c has been investigated for A15-type V3Ga compounds. The T c is determined by the specific heat and the magnetic flux transmission ratio through the sample and discussed in terms of the powder X-ray diffraction. The long-range order parameter and the lattice parameter of V3Ga are evaluated quantitatively by the Rietveld method at each composition, which is evaluated exactly by the electron probe microanalysis (EPMA) measurements. The well-ordered homogeneous alloying structures. V 1x Ga x compounds are found to have nearly the same T c as that for the stoichiometric composition between 0.23<0.25.  相似文献   

20.
The electrical resistivity of several types of (V1?x?yMxM′y)2O3 alloys have been investigated, where M and M′ represent Al, Ga, and 3d transition metal elements. It was found that effects previously obtained by incorporation of M = Al, Cr, may be counteracted by use of M′ = Ti or Ga. On the basis of this information 3-dimensional phase diagrams have been sketched out; several sets of critical points have been encountered. The physical characteristics of (Ti1?yCry)2O3 have also been determined; the electrical properties of the alloy y = 0.4 and 0.6 are remarkably similar to those of (V1?xCrx)2O3 with x = 0.02, 0.03.  相似文献   

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