SiC衬底上外延GaN:Mg材料特性研究

利用扫描电子显微镜、拉曼散射光谱和光致发光谱对在SiC衬底上采用MOCVD异质外延的GaN:Mg薄膜特性进行研究发现：除了一部分Mg原子替代Ga原子呈现受主性外,大部分Mg原子以间隙原子状态（Mg_i）存在,并且在缺陷或者位错处大量聚集引起薄膜张力应力减小,薄膜在降温过程中由于应力不均匀会在部分区域内出现大量的裂纹;Mg的掺杂会加剧GaN无序化程度,致使薄膜质量变差;而室温下的PL谱测量表明蓝带发光由DAP（深施主—浅受主）复合引起,其中D为Mg_GaV_{N关键词：GaN∶Mg异质外延扫描电子显微镜拉曼散射光致发光谱}     

GaN1-xPx薄膜的结构特性研究

用金属有机物化学气相沉积技术在蓝宝石衬底上外延了高P组分的GaN1-xPx 薄膜.利用x射线衍射仪和拉曼光谱仪研究了P对GaN1-xPx晶体结构的影响.研究结果表明:随着P组分比的增加,GaN1-xPx(0002)衍射峰逐渐向小角度移动,即晶格常数变大;与非掺杂GaN相比,GaN1-xPx薄膜的拉曼光谱中出现了4个新的振动模式,将它们分别归因于P族团引起的准局部振动模式、Ga-P键振动引起的间隙模,以及来自缺陷引起的无序激活散射.同时,随着P组分比的增加,A1(LO)模式的频率向低频方向移动,这种红移现象起因于合金化和应变的影响.     

GaN薄膜拉曼散射光谱的研究

利用拉曼散射光谱对在SiC衬底上采用MOCVD异质外延的未故意掺杂GaN薄膜特性进行研究发现E2模式向频率低的方向漂移表明在GaN薄膜中存在张力,由于SiC衬底不平整度增加引起更多位错的出现,从而引起拉曼谱中E2模式的加宽,因此通过选择平整度较好的衬底可以减小缺陷密度,提高薄膜的质量,此外A1(LO)模式的出现与强度可以用来表征未掺杂GaN的薄膜质量。     

MOCVD生长AlGaN薄膜的X光电子能谱

用X光电子能谱和X射线衍射谱方法分析了MOCVD生长的AlGaN薄膜的实际表面形态和晶体结构基于XPS测量结果,通过分析计算,发现实际表面除GaN外存在Ga     

AlGaN插入层对InAlN/AlGaN/GaN异质结散射机制的影响

InAlN/AlN/GaN异质结中,名义上的AlN插入层实为Ga含量很高的AlGaN层, Al, Ga摩尔百分比决定了电子波函数与隧穿几率,因此影响与InAlN/AlGaN势垒层有关的散射机制.本文通过求解薛定谔-泊松方程与输运方程,研究了AlGaN层Al摩尔百分含量对InAlN组分不均匀导致的子带能级波动散射、导带波动散射以及合金无序散射三种散射机制的影响.结果显示:当Al含量由0增大到1,子带能级波动散射强度与合金无序散射强度先增大后减小,导带波动散射强度单调减小;在Al含量为0.1附近的小组分范围内,合金无序散射是限制迁移率的主要散射机制,该组分范围之外,子带能级波动散射是限制迁移率的主要散射机制;当Al摩尔百分含量超过0.52,三种散射机制共同限制的迁移率超过无插入层结构的迁移率, AlGaN层显示出对迁移率的提升作用.     

氟掺杂的氧化锌薄膜的结构和光学特性

通过热氧化氟化锌(ZnF2)薄膜的方法制备出氟掺杂的多晶ZnO薄膜,ZnF2薄膜是利用电子束蒸发方法沉积在Si(100)衬底得到的。利用X射线衍射和X射线电子能谱研究了ZnF2薄膜向ZnO的转变过程。实验结果表明,在400℃退火30min的条件下能够获得六方纤锌矿结构的ZnO：F薄膜。对ZnO：F薄膜的室温光致发光谱可以观察到位于379nm、半峰全宽为73meV的紫外发射峰,而相应于缺陷的深能级发射则完全猝灭。表明ZnO中残留的F能够有效地增强激子的发光,同时使缺陷发光强度明显降低。对F掺杂对ZnO的发光性能的影响进行了讨论。     

氧化铬外延薄膜的x射线研究

采用分子束外延技术(MBE)在MgO(001)基板上沉积了氧化铬薄膜,并利用x射线衍射 (XRD)和x射线反射谱(XRR)对薄膜的晶体结构进行了表征.θ—2θ扫描和倒易空间图(R SM)揭示出薄膜为单相c轴外延生长,晶体结构为体心正交,晶胞常数a,b,c分别为0.8940±0.0003,0.298±0.0002和0.3897±0.0002nm.扫描表明薄膜在面内具有90°孪晶,取向关系为a∥MgO〈110〉,c∥MgO(001).XRR谱测得薄膜的电子 密度为1350±20nm-3,与由晶胞体积 计算得关键词：一氧化铬薄膜x射线衍射倒易空间图x射线反射谱     

Si调制掺杂AlGaN/GaN异质结磁阻拍频现象

在低温（15K—25K）和强磁场（0—10T）条件下,对二维电子气占据两个子带的Si调制掺杂AlGaN/GaN异质结构进行磁输运测量.在一定温度范围内观察到磁阻拍频现象.根据Sander等人和Raikh等人给出的磁阻振荡的具体表达式,拟合实验结果表明磁阻拍频是由第一子带S dH振荡和磁致子带间散射引起的磁阻振荡导致的.关键词：AlGaN/GaN异质结构SdH振荡磁致子带间散射磁阻拍频     

GaN1-xPx薄膜的结构特性研究

用金属有机物化学气相沉积技术在蓝宝石衬底上外延了高P组分的GaN_1-xP _x 薄膜.利用x射线衍射仪和拉曼光谱仪研究了P对GaN_1-xP_x晶体结构 的影响.研究结果表明：随着P组分比的增加,GaN_1-xP_x（0002）衍射 峰逐渐向小角度移动,即晶格常数变大;与非掺杂GaN相比,GaN_1-xP_x薄 膜的拉曼光谱中出现了4个新的振动模关键词：1-xP_x')\" href=\"#\">GaN_1-xP_x金属有机物化学气相沉积x射线衍射拉曼光谱     

X射线衍射研究表面活化剂对异质外延薄层Ge结构的影响

利用原位的反射式高能电子衍射和非原位的X射线衍射技术,研究了活化剂Sb对于Ge在Si上外延过程的影响．当没有活化剂、Ge层厚度为6nm时,外延Ge层形成岛状,应力完全释放．当有Sb时、Ge在Si上的生长是二维的,并且应力释放是缓慢的,即使Ge外延层厚为6nm,仍有42%的应变没有弛豫．关键词：     

Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy

Al_0.91Ga_0.09N epilayers have been obtained by pulsed atomic layer epitaxy (PALE) technique on sapphire (0 0 0 1) substrates. Deep ultraviolet (DUV) photoluminescence (PL) spectroscopy and Raman scattering spectrum have been employed to study the optical transitions in Al_0.91Ga_0.09N epilayers. We found the exciton-phonon interaction by fitting the asymmetric PL peak, in which the transverse optical phonon (TO) and the longitudinal optical (LO) phonon are the main contributor. The abnormal S-shaped temperature dependence of the PL band peak is less pronounced or has disappeared. Further analysis shows that there possibly exists a high density of deeper localized state (∼90 meV) in Al_0.91Ga_0.09N. The formation of these localized states provides a favorable condition for efficient light emission.     

The influence of substrate etched on the quality of GaN epilayers

We report the growth of GaN epilayers on the sapphire substrate etched by MOCVD. Sapphire substrate is etched by H₃PO₄ and NaOH. The Raman scattering spectroscopy and photoetching analyses show that the substrate etched can effectively decrease the residual stress and the dislocations density in these epilayers. The X-ray diffraction analysis shows the process can reduce the value of the FWHM. Therefore, the quality of GaN epilayers should be improved by substrate etched.     

Al-Zn-Mg-Cu-Li合金时效过程微结构演化的小角x射线散射研究

应用小角x射线散射技术分析了Al-Zn-Mg-Cu-Li合金在130,150和160℃温度时效24 h析出粒子的微结构参数的变化情况. 粒子的半径随着时效温度的增高而增加,它的比内表面积和体积百分数随着时效温度的增高而减小. 对Porod曲线q³J(q)-q²的分析表明,析出粒子与基体之间有明显的界面. 关键词：小角x射线散射Al-Zn-Mg-Cu-Li合金时效析出粒子     

Phase transitions in the H+-conducting perovskite ceramics by the quasi-elastic neutron and high-pressure Raman scattering

H⁺-containing lanthanide-doped perovskites A(Ba, Sr etc.)B(Zr, Ce, Ti etc.)O₃ are potential ceramic membranes for fuel cell and medium temperature water electrolysis (300–800 °C). The comparison studies of the hydrated and non-hydrated Yb-doped BaZrO₃ and SrZrO₃ were performed by thermal expansion, medium–high temperature neutron and room-temperature high-pressure Raman scattering. Neutron diffraction and elastic/quasi-elastic studies carried out for BaZrO₃ ceramic show the presence of the protons, their successive diffusion above ∼600 °C, and then their departure above 750 °C (under vacuum). Phase transitions and their modification by proton insertion are discussed. A high-pressure Raman study of SrZrO₃ performed at room temperature in the diamond anvil cell reveals the presence of two pressure-induced phase transitions at about 5 and 22 GPa and confirms that proton insertion modifies the phase transition sequences. Paper presented at the 11th EuroConference on the Science and Technology of Ionics, Batz-sur-Mer, Sept. 9–15, 2007.     

Indirect Raman identification of the proton insertion in the high‐temperature [Ba/Sr][Zr/Ti]O3‐modified perovskite protonic conductors

OH⁻ and H₃O⁺ species in hydrates and simple oxides are rather well characterised from their IR, Raman and inelastic neutron points of view. For the H⁺ (H₂O) species in solid state the variability is well established and assignment remains discussed. The question of the vibrational signature of isolated proton (e.g. the ionic proton, a proton sharing its interaction with more than two acceptors) and its dynamic nature (proton gas, polaron,…) is open. H⁺‐containing modified perovskites A(Ba,Sr,…) B(Zr,Ce,Ti,…) O₃ are potential ceramic membranes for fuel cell and medium temperature water electrolysis (300–800 °C). Comparison studies of the protonated and non‐protonated lanthanide/rare earth‐modified perovskites of type Ba(Sr)Zr(Ti)O₃ as well as Al‐modified BaTiO₃ show that a broad component centred at 2500 cm⁻¹ is observed after ‘proton insertion’. Its intensity is correlated to the protonic species content as well as to the conductivity of the materials. The mixed nature of this feature is discussed: fluorescence related to the dangling bonds, A, B, C bands or new phenomena related to the ionic protons and associated electronic defect. Copyright © 2008 John Wiley & Sons, Ltd.