氧化锆/氧化铝复相陶瓷显微组织缺陷分析

针对5Y-ZrO2/Al2O3复相陶瓷出现的晶粒异常长大和晶粒开裂问题展开研究。以ZrO2和Al2O3为主要原料,采用常压烧结工艺制备陶瓷样品,利用SEM观察显微组织。分析表明:MgO对抑制Al2O3晶粒异常长大有重要影响,MgO的加入量应随着Al2O3加入量的变化而改变;烧结温度的改变将导致异常长大的Al2O3晶粒细化。当烧结温度较低时,Al2O3晶粒将在短轴方向逐渐断开成段;当温度较高时,则沿着长轴方向逐渐开裂成条状。ZrO2晶粒的断裂主要与烧结温度有关:在1630℃以上烧结时,出现裂纹并贯穿晶粒;晶粒开裂的原因是:烧结温度较高时,陶瓷中形成了t-ZrO2,在降温过程中大颗粒的t相发生t→m相变,而小颗粒t相则无法变成m相,引起局部体积变化不均匀,从而产生相变应力导致晶粒穿晶断裂。     

氮化铝陶瓷低温烧结助剂体系的研究

选用6种配方进行研究，通过XRD、SEM和TGA研究了各配方在升温过程中的物相组成及变化，详细记录了实验中各试样的形貌变化，讨论了相关物质对液相生成温度的影响。研究发现，氟化钙-氧化钇-碳酸锂为最佳体系，氟化钙类似化合物可促进碳酸盐的分解，生成的氧化锂(特定的碱性氧化物)可降低液相生成温度(最低共熔温度)，从而降低液相生成温度，促进烧结进程。     

氮化铝陶瓷的制备及其在复合材料中的应用研究

氮化铝(AlN)陶瓷是一种性能优良的高技术陶瓷.本文概述了AlN陶瓷粉体的合成、成形、烧结的制备过程及其在复合材料中的应用研究,指出要更多地开展AlN复合材料及其在复合材料中应用的研究工作,以满足科技发展对材料提出的更高要求.     

放电等离子烧结氮化铝透明陶瓷

利用放电等离子烧结(spark plasma sintering,SPS)技术开展对氮化铝透明陶瓷的研究.分析了原料粉的特性,烧结工艺对烧结体的影响以及所制备的氮化铝透明陶瓷的显微结构.     

氮化铝陶瓷的研究与应用

氮化铝（ＡｌＮ）因具有高热导率,低介电常数、与硅相匹配的热膨胀率系数及其他优良的物理选场生在新领域越来越引起人们的关注,本文主要介绍分析了ＡｌＮ粉体合成、烧结技术、应用基础理论研究的最新动态和进展,以及ＡｌＮ陶瓷的应用领域与前景。     

高热导率氮化铝陶瓷研究进展

氮化铝(AIN)陶瓷具有热导率高、热膨胀系数低、电阻率高等特性以及良好的力学性能,被认为是新一代高性能陶瓷基片和封装的首选材料.本文简要介绍了氮化铝陶瓷的基本特性,重点总结了氮化铝陶瓷的国内外研究现状及其制备工艺,并列举了一些氮化铝陶瓷的应用实例.     

氧化铝泡沫陶瓷浆料的研究

有机泡沫陶瓷浸渍工艺中,浆料性能对泡沫陶瓷的显微结构与力学性能具有重要影响.本文研究了球磨时间和浆料固相含量对氧化铝泡沫陶瓷浆料的稳定性、流变性和颗粒粒度分布的影响.实验结果表明,球磨时间4 h后,氧化铝浆料的沉降度降低,粘度适宜,氧化铝颗粒中位径较小,表明浆料稳定性提高,流变性改善,可保证浆料在泡沫中的有效浸渍.当固相含量在25%～35%之间时,浆料的性能较优.实验证明球磨时间及固相含量对浆料的性能有重要影响.     

晶界相对半透明氮化铝陶瓷透过率的影响

分别添加质量分数为3%的CaF2和Y2O3为烧结助剂,在相同烧结工艺制度下采用放电等离子烧结(spark plasma sintering,SPS),制备了两种半透明AlN陶瓷.两种样品有相近的密实度和晶粒尺寸,但是它们的透过率却相差很大.用扫描电镜,X射线衍射分析和透射电镜结合能量散射型X射线光谱分析仪对样品微观结构进行分析.结果表明:晶界相的存在及分布方式对样品透过率有重要影响.添加CaF2的样品表现出很高的纯度,晶界及三角晶界处观察不到第二相.添加Y2O3的样品中,由于生成的晶界相Y3Al5O12沿AlN晶界分布,阻隔AlN晶粒之间的连接,在晶界处造成光散射,导致样品透过率下降.     

碳热还原反应法合成氮化铝的研究

本实验采用碳热还原反应法合成氮化铝纤维,得到与氧化铝不同形貌的氮化铝。这与以前实验结果不同。本实验认为氮化铝碳热还原反应过程可以分为气—固两步进行,即当氧化铝与氮气和活性碳充分接触时,氧化铝在活性碳的作用下被还原成铝的低价氧化物并进一步氮化;而当氧化铝被第一步反应生成的氮化铝包裹严密不能与氮气和活性碳充分接触时,反应通过固相扩散来进一步完成,在固相扩散过程中,既包括了活性碳和氮气的扩散,也包括了铝离子的扩散,反应是在氮化铝层两个界面同时进行。     

Microstructural Evolution during Sintering of Aluminum Nitride Ceramics Doped with Alumina and Yttria

The microstructural evolution of AlN sintered at >1950°C was studied in a specimen doped with 10 wt% Al₂O₃ and 5 wt% Y₂O₃. The constituent phases of the specimen were AlN, YAG, γ-AlON, and AlON polytypoids (compositional polytypes). Transmission and scanning electron microscopy revealed the microstructural characters: platelike 7AlN·Al₂O₃ first crystallized with concurrent formation of a residual liquid, then spherical AlN crystals formed. The liquid itself changed composition with the progress of the crystallization and reached the eutectic composition in the pseudobinary system AlN–YAG, and crystallized to an aggregate of AlN and YAG during cooling. As a product of the reaction of 7AlN·Al₂O₃, γ-AlON was formed.     

Dy和Er掺杂对AlN陶瓷显微结构及性能的影响

在AlN粉末中添加稀土氧化物Dy2O3和Er2O3,采用高温烧结方法制备氮化铝陶瓷,研究了稀土掺杂对陶瓷烧结性能、显微结构及导热性能的影响。结果表明:纯氮化铝陶瓷相对密度只有90.7%,导热率为45.7W/(m·K),而添加3%的Dy2O3的AlN陶瓷相对密度为99.4%%,导热率为84.1W/(m·K),添加3%的Er2O3可使氮化铝陶瓷相对密度提高到99.1%,导热率达到115.4W/(m·k);添加Er2O3可有利于消除氮化铝陶瓷的晶界相,减少氮化铝晶粒缺陷及提高声子在晶体中的传播路程,并显著提高氮化铝陶瓷的结构致密性和导热性能。     

氮化铝陶瓷的研制及应用

氮化铝 (AlN)因具有高热导率、低介电常数、与硅相匹配的热膨胀系数及其他优良的物理特性 ,在新材料领域越来越引起人们的关注。此文主要介绍并分析了AlN粉体合成、烧结、性能结构、AlN陶瓷的应用与前景     

Composition and Microstructure of Chemically Vapor-Deposited Boron Nitride, Aluminum Nitride, and Boron Nitride + Aluminum Nitride Composites

The composition and microstructure of dispersed-phase ceramic composites containing BN and AIN as well as BN and AIN single-phase ceramics prepared by chemical vapor deposition have been characterized using X-ray diffraction, scanning electron microscopy, electron microprobe, and transmission electron microscopy techniques. Under certain processing conditions, the codeposited coating microstructure consists of small single-crystal AIN fibers (whiskers) surrounded by a turbostratic BN matrix. Other processing conditions resulted in single-phase films of AIN with a fibrous structure. The compositions of the codeposits range from 2 to 50 mol% BN, 50 to 80 mol% AIN with 7% to 25% oxygen impurity as determined by electron microprobe analysis.     

Microstructure and Composition of Alumina/Aluminum Composites Made by Directed Oxidation of Aluminum

Two Al₂O₃/Al composites, grown by the directed oxidation of molten Al alloys at 1400 and 1600 K, were investigated by X-ray diffraction, optical microscopy, scanning electron microscopy, transmission electron microscopy, and wet chemical analysis. The materials were found to contain a continuous network of Al₂O₃, which was predominantly free of grain-boundary phases and was made up of nanometer- to micrometer-sized crystallites, a continuous network of Al alloy, and isolated inclusions of Al alloy. No crystallographic orientation was observed in the metallic phase, whereas the Al₂O₃ was oriented with its c axis parallel to the growth direction. The higher process temperature yielded a lower metal content and less connectivity of the metallic consituent.     

Preparation of Aluminum Nitride Powder from Aluminum Polynuclear Complexes

AIN powder was synthesized from aluminum polynuclear complexes. Basic aluminum chloride and basic aluminum lactate were used as the aluminum polynuclear complexes. These starting materials and glucose were dissolved in water and mixed homogeneously. AIN powder was obtained by calcining after drying and precalcining at 800°C under nitrogen gas flow. Then excess carbon was removed by firing in air. Nitridation in the system was investigated and compared with that in the alumina–carbon black system. It was found that in our reaction system nitridation began and proceeded at lower calcination temperatures above 1200°C than in the alumina–carbon black system. Using aluminum polynuclear complexes, AIN was synthesized through the nitridation of γ-alumina and produced in a very fine and sharp particle size distribution.     

Microstructural Characterization of High-Thermal-Conductivity Aluminum Nitride Ceramic

An aluminum nitride (AlN) ceramic with a thermal conductivity value of 272 W·(m·K)⁻¹, which is as high as the experimentally measured thermal conductivity of an AlN single crystal, was successfully fabricated by firing at 1900°C with a sintering aid of 1 mol% Y₂O₃ under a reducing N₂ atmosphere for 100 h. Oxygen concentrations were determined to be 0.02 and 0.03 mass% in the grains and in the grain-boundary phases, respectively. Neither stacking fault in the grains nor crystalline phase in the grain-boundary regions was found by transmission electron microscopy. An amorphous phase possessing yttrium and oxygen elements was detected between the grains as thin films with a thickness of <1 nm. Because the amount of grain-boundary phase was small, the high-thermal conductivity of the ceramic was attributable to the low oxygen concentration in the AlN grains.     

Preparation of Titanium Nitride/Alumina Laminate Composites

A preparation route for TiN/Al₂O₃ laminate composites has been described. A water-based process using Al₂O₃ and TiN slurries with solids contents of 40 and 35 vol%, respectively, was used to make TiN and Al₂O₃ tapes. The removal of the binder was monitored by weight-loss measurements in a thermogravimetry unit. Bodies composed of Al₂O₃ and TiN tapes were densified at temperatures of 1400° and 1500°C using the Spark Plasma Sintering^® (SPS) technique. Densities of >98% of the theoretical densities were approached. Crack-free and almost fully densified TiN/Al₂O₃ compacts were prepared by heating the burned-out green bodies to the final sintering temperature (1500°C) at a rate of 100°C/min, and with a holding time of 5–10 min, under a pressure of 75 MPa. The microstructures of the obtained compacts were studied using scanning electron microscopy. Grain sizes in the sintered Al₂O₃ and TiN compacts were similar to those of the precursor powders. Hardness and indentation fracture toughness were measured at room temperature, and the monolithic compacts as well as the laminate composites exhibited anisotropic mechanical behavior; i.e., the cracks propagated much more easily in a direction parallel to the laminas than perpendicular to them.     

Preparation of Silicon Carbide/Aluminum Nitride Ceramics Using Organometallic Precursors

Solid solutions of 2H -SiC/AlN can be prepared at temperatures less than 1600°C by rapid pyrolysis ("hot drop") of mixtures of [(Me₃Si)_0.80((CH₂=CH)MeSi)_1.0(MeHSi)_0.35] _n (VPS) or [MeHSiCH₂] _n (MPCS) with [R₂AlNH₂]₃, where R=Et, i -Bu or simply by slow pyrolysis of the precursor mixture in the case of [Et₂AlNH₂]₃. In contrast, slow pyrolysis of mixtures of VPS or MPCS with [ i -Bu₂AlNH₂]₃ yields a composite of 2 H -AlN and 3 C -SiC at 1600°C, which transforms into a single 2 H -SiC/AlN solid solution on heating to 2000°C. The influences of the nature of the precursor and processing conditions on the structure, composition, and purity of the SiC/AlN materials are discussed.     

Hydrothermal Corrosion and Strength Degradation of Aluminum Nitride Ceramics

The hydrothermal corrosion and strength degradation of aluminum nitride (AlN) ceramics were investigated. The weight gain in AlN ceramics after corrosion occurred because of the formation of boehmite. The reaction kinetics of AlN with water were diffusion controlled through the boehmite product layer. At 180°C, immersion in water caused no strength degradation, and water vapor caused a 20% strength degradation. At 300°C, immersion in water caused a 20% strength degradation, and water vapor caused a 30% strength degradation.