纳米氮化硼在吡啶热条件下的物相转变规律

为了研究纳米氮化硼在溶剂热条件下的物相转变规律, 利用三氯化硼(BCl3)和氮化锂(Li3N)为原料, 吡啶作为溶剂合成了纳米氮化硼. 在实验过程中, 系统研究了反应温度、压力以及反应时间的影响, 发现在吡啶热反应体系中, 首先形成的是结构无序的无定形纳米氮化硼(aBN). 随着反应温度和压力的提高以及时间的延长, 纳米氮化硼中的原子排列有序度不断提高, 逐渐出现了结构部分有序的湍层氮化硼(tBN)和结构有序的六方氮化硼(hBN). 在反应温度和压力提高时, 样品中首先是tBN的含量提高, 然后是hBN的含量明显增加, 说明在合成反应过程中存在aBN→tBN→hBN的物相转变.     

自发团聚诱导高比例立方氮化硼微晶的水热合成

利用水热法合成了立方氮化硼（cBN）. 通常水热法制备的氮化硼样品是立方氮化硼（cBN）和六方氮化硼（hBN）及其它晶相的混合物,这限制了该方法的应用前景. 文中利用立方氮化硼在特定反应条件下的自发团聚现象,成功地发展了一种使混合物中的立方氮化硼在反应过程中自发纯化的新方法. 提高原料浓度和反应温度,有利于获得更大粒径的立方氮化硼和尺寸分布更均匀的团聚颗粒,提高搅拌转速来改善溶液的均匀性也有同样效果;而提高反应压力则会导致相反的结果. 文中也探讨了自团聚现象在生长大尺寸立方氮化硼晶体以及非均相合成中的潜在应用价值.     

硼砂与尿素合成六方氮化硼的机理

研究了N_2气氛下硼砂与尿素反应生成六方氮化硼以及主要副产物产生和变化的过程,采用热重-差示扫描量热法(TG-DSC)、X射线衍射(XRD)、扫描电子显微镜(SEM)等检测手段对反应产物和氮化硼样品进行了分析.研究结果表明,氮化硼在700℃左右完全生成,随焙烧温度的提高其结晶度不断提高.反应副产物偏硼酸钠的生成是导致氮化硼产率较低的主要原因,在高温焙烧过程中偏硼酸钠的存在有利于六方氮化硼的结晶过程.研究结果可为硼砂-尿素法六方氮化硼制备工艺的优化和改进提供理论基础.     

纳米TiO_2催化剂微晶结构对光催化反应的影响

采用正交试验方法,调控Ti（SO4）2原料浓度、沉淀剂NH4HCO3浓度、沉淀pH值、焙烧温度和焙烧时间等制备条件制备得到了25个锐钛矿相TiO2光催化剂.对TiO2光催化降解十二烷基苯磺酸钠（SDBS）的催化活性与TiO2锐钛矿相10个晶面的法向粒子尺寸、晶格畸变应力、X射线衍射强度之间的关系进行了分析.发现TiO2光催化SDBS的降解遵循一级反应动力学;其主要影响因素为（101）晶面结晶情况,而与其余晶面的相关性不大;光催化反应需要晶格畸变较少的结晶较完整的（101）晶面;晶粒尺寸减小,比表面积增大有利于提高反应速率;光催化反应过程主要在结晶的锐钛矿相（101）晶面表面上发生,而无定形TiO2催化活性较低.     

纳米TiO2催化剂微晶结构对光催化反应的影响

采用正交试验方法, 调控Ti(SO₄)₂原料浓度、沉淀剂NH₄HCO₃浓度、沉淀pH值、焙烧温度和焙烧时间等制备条件制备得到了25个锐钛矿相TiO₂光催化剂. 对TiO₂光催化降解十二烷基苯磺酸钠(SDBS)的催化活性与TiO₂锐钛矿相10个晶面的法向粒子尺寸、晶格畸变应力、X射线衍射强度之间的关系进行了分析. 发现TiO₂光催化SDBS的降解遵循一级反应动力学; 其主要影响因素为(101)晶面结晶情况, 而与其余晶面的相关性不大; 光催化反应需要晶格畸变较少的结晶较完整的(101)晶面; 晶粒尺寸减小, 比表面积增大有利于提高反应速率; 光催化反应过程主要在结晶的锐钛矿相(101)晶面表面上发生, 而无定形TiO₂催化活性较低.     

水热法合成立方氮化硼微晶

低温低压条件下, 在水溶液中利用反应耦合效应成功地合成了立方氮化硼微晶. 利用X射线衍射(XRD), 傅里叶红外吸收(FTIR)测试确定了产物的物相组成, 根据透射电镜(TEM)和选区电子衍射(SAED)的测试结果分析产物的形貌和表面特征, 高分辨电镜(HRTEM)和X射线能谱仪(XPS)测试结果证明了立方氮化硼的存在.     

选相原位法合成立方氮化硼的关键影响因素

利用选相原位法在水溶液中成功制备出了立方氮化硼晶体，对反应条件进行了优化。结果表明，利用选相原位法合成立方氮化硼的最佳实验条件是：反应压力为10.0 MPa，在氯离子加入下利用混合氮源进行反应。在该条件下得到了纯相的立方氮化硼晶体。     

氮化硼负载的高分散Au-CuOx纳米颗粒用于低温CO氧化

负载型金催化剂显示出高的低温CO氧化活性,其催化性能与载体的性质密切相关.近年来,六方氮化硼作为一种新型催化材料引起了极大关注.已有研究表明,二维结构的氮化硼纳米片有利于传质扩散,并且暴露出大量的表面和边缘,作为新型非金属催化剂在烷烃氧化脱氢中表现出优异的活性.同时,CO氧化反应是强放热过程,氮化硼具有优良的导热性能,能够减少反应过程中热点的形成.然而氮化硼是非还原性载体,与活性组分金之间的相互作用较弱,需要通过改性来加强金与氮化硼载体间的相互作用.基于此,本文首先通过球磨处理来获得具有高比表面积和富缺陷的氮化硼纳米片载体,采用浸渍法在氮化硼纳米片上引入铜物种,实现对载体的改性,然后采用传统的沉积-沉淀法制备Au-CuO_x/BN催化剂.经氧化性气氛预处理后,Au-CuO_x/BN催化剂表现出良好的低温CO氧化活性,80℃下即可实现CO的完全转化.采用X射线衍射(XRD),高分辨透射电镜(HRTEM),氢气程序升温还原(H₂-TPR),X射线光电子能谱(XPS),CO吸附原位漫反射红外光谱(CO-DRIFT)等表征手段深入分析了Au-CuO_x/BN的结构与催化活性的关系.XRD测试结果未观察到明显的金和铜物种衍射峰,表明二者在氮化硼载体上高度分散.HRTEM和元素分析面扫描结果进一步表明,氧化铜主要分布于BN边缘的官能团和缺陷位上,金纳米粒子与铜物种的空间分布位置一致,表明BN通过稳定CuO_x物种进而实现了金纳米粒子(2.0 nm)的高分散,且反应后的金纳米粒子未发生明显团聚.H₂-TPR结果表明金和铜物种间的相互作用可促进铜物种的还原,XPS分析进一步证实了金和铜物种之间存在电子转移.CO-DRIFT结果表明,Au-CuO_x/BN催化剂对CO的吸附能力和提供活性氧物种的能力显著强于Au/BN催化剂,从而促进了CO氧化反应.综上,铜物种作为连接金和氮化硼载体之间的桥梁,促进了金纳米粒子在氮化硼载体上的分散和稳定,同时增强了CO的吸附和氧的活化.本文拓展了氮化硼在多相催化中的应用,为发展新型二维催化材料提供新的思路.     

不同处理方法对氮化硼负载铁基催化剂费托合成性能的影响

采用等体积浸渍法制备了三种氮化硼(BN)负载的铁基催化剂,将其用于费托合成反应中;结合XRD、TEM、FT-IR和H2-TPR等表征手段,研究了催化剂的物相结构、形貌特征、还原性能以及F-T合成反应性能。结果表明,Cu助剂加入不会破坏载体BN的物相结构,而硼砂的加入会提高载体BN的结晶度; Cu助剂和硼砂加入对催化剂形貌的影响不明显,但都会使所制备的负载型铁基催化剂还原温度降低。在n(H2_)/n(CO)=2.0、340℃、2 MPa和GHSV=1500 h~(-1)的条件下,三种催化剂Fe/BN、Fe/BNM和Fe-Cu/BN上的CO的转化率分别为12.3%、36.2%和31.6%,产物中甲烷选择性为57.9%、26.8%和44.7%。Fe-Cu/BN和Fe/BNM两种催化剂活性均比Fe/BN催化剂有所提高,表明BN负载的铁基催化剂可以通过加入助剂以及改善载体与活性组分之间的相互作用来提升其对F-T合成反应的催化活性。相关结果可为探索制备高活性的氮化硼基FT合成催化剂提供思路。     

PA6/HIPS/PP-g-(GMA-co-St)反应共混体系的研究

通过扫描电镜、热分析、熔体流动速率、熔融扭矩和力学性能等测试方法研究了甲基丙烯酸缩水甘油酯(GMA)和苯乙烯(St)多单体熔融接枝聚丙烯[PP-g-(GMA-co-St)]对PA6/HIPS共混物的熔融流变性能、结晶行为、相形态和力学性能的影响.结果表明,在熔融共混过程中,PP-g-(GMA-co-St)中的环氧基与PA6的端氨基原位生成的接枝共聚物有效地降低了共混物的界面张力,提高了共混物的界面粘着力,使共聚物的流动速率降低,熔融扭矩提高;PA6分子链的规整性降低,结晶完善性变差.在PP-g-(GMA-co-St)的质量分数为10%时,共混物分散相的尺寸明显减少,力学性能得到较大提高;其中冲击强度超过纯PA6,达到HIPS水平.通过反应共混,制备了力学性能均衡的PA6/HIPS/PP-g-(GMA-co-St)共混物合金.     

Effect of pH on the Hydrothermal Synthesis of BN Nanocrystals

Boron nitride (BN) has been synthesized using hydrothermal synthesis method. The experimental results showed that the pH value of the reaction solution has an important effect on the yield and phases of BN samples. As the pH value decreased, the content of cBN increased and the yield improved. The increase in cBN content is resulted from the conversion of oBN into cBN under hydrothermal condition, and the growth of cBN nanocrystals may due to the decrease in the reaction speed, thus the crystalline perfection of BN improved when the pH value decreased.     

Effects of Temperature Raising Speed on the Growth of BN Crystals in Hydrothermal Solutions

Cubic boron nitride (cBN) and orthorhombic boron nitride (oBN) crystals have been prepared in hydrothermal solutions by reacting H3BO3 NaN3 P and H3BO3 NaN3 N2H4 respectively. The experimental results indicated that, if the temperature was increased rapidly, both the yield and perfectness of BN crystals became poor. On the contrast, the yield and perfectness of BN crystals can be improved very much by slowly increasing the temperature of the reaction mixture. The results of X-ray powder diffraction (XRD), Fourier transform infrared spectrum (FTIR) and high resolution transmission electron microscopy (HRTEM) proved that the samples were composed of oBN and cBN.     

Multi-step Reaction Route Developed for Improving Crystallinity of Boron Nitride Nanoparticles

A multi-step reaction route was developed to synthesize boron nitride(BN) nanoparticles via the reaction between NaN₃ and BCl₃ in a benzene-thermal solution. By means of this route, the crystallinity of BN nanoparticles was improved via increasing the reaction steps. Meanwhile, a phase transformation from hexagonal BN(hBN) or turbostratic BN(tBN) to cubic BN(cBN) occurred, resulting in the increase of cBN content. Moreover, the content of cBN also slightly increased when the temperature was elevated from 265 ℃ to 280 ℃.     

高温高压Li3N-hBN体系cBN转变的热力学分析

以经典热力学第二定律ΔG<0为依据,分析了静态高温高压触媒法合成立方氮化硼(cBN)过程中发生的可能反应.考虑温度和压强对反应物相体积的影响,计算了六方氮化硼(Li3N-hBN)体系中hBN+Li3N→Li3BN2,h BN→cBN及Li3BN2→Li3N+cBN反应在高温高压条件下的ΔG.结果证实,Li3BN2由Li3N与hBN在高温高压(T>1300 K,P>3.0 GPa)条件下反应得到,在cBN的合成(T=1600～1800 K,P=4.6～6.0 GPa)条件下,hBN和Li3BN2都有向cBN转化的倾向,但由hBN向cBN直接转变的反应自由能比Li3BN2分解生成cBN的反应自由能更负,反应的可能性更大.探讨了高温高压条件下立方氮化硼的转变机理。     

Hollow boron nitride (BN) nanocages and BN-nanocage-encapsulated nanocrystals

Hollow boron nitride (BN) nanocages (nanospheres, image on the left) and BN-nanocage-encapsulated GaN nanocrystals (right) have been synthesized by using a homemade B-N-O precursors. The as-prepared BN hollow nanocages have typically spherical morphologies with diameters ranging from 30 to 200 nm. The nanocages have crystalline structures. Peanutlike nanocages with double walls have also been observed; their internal space is divided into seperated compartments by the internal walls. The method is extended to sheathe nanocrystals with BN nanocages; BN-shell/GaN-core nanostructures have been successfully fabriacted. The method may be generally applicable to the fabrication BN-sheathed nanocrystals.     

Interfacial study of cubic boron nitride films deposited on diamond

We have studied the nucleation and growth of cubic boron nitride (cBN) films deposited on silicon and diamond-coated silicon substrates using fluorine-assisted chemical vapor deposition (CVD). These comparative studies substantiate that the incubation amorphous/turbostratic BN layers, essential for the cBN nucleation on silicon, are not vital precursors for cBN nucleation on diamond, and they are inherently eliminated. At vastly reduced critical bias voltage, down to -10 V, cBN growth is still maintained on diamond surfaces, and cBN and underlying diamond crystallites exhibit an epitaxial relationship. However, the epitaxial growth is associated with stress in the cBN-diamond interfacial region. In addition, some twinning of crystallites and small-angle grain boundaries are observed between the cBN and diamond crystallites because of the slight lattice mismatch of 1.36%. The small-angle grain boundaries could be eliminated by imposing a little higher bias voltage during the initial growth stage. The heteroepitaxial growth of cBN films on different substrate materials are discussed in the view of lattice matching, surface-energy compatibility, and stability of the substrate against ion irradiation.     

Prepared Low Stress Cubic Boron Nitride Film by Physical Vapor Deposition

We present low stress cubic boron nitride (cBN) films with a transition layer deposited on the metal alloy substrates by tuned substrate radio-frequency magnetron sputtering. The films were characterized by Fourier transform infrared spectroscopy and transmission electron microscopy (TEM). The IR peak position of cubic boron nitride at 1006.3 cm⁻¹, which is close to the stressless state, indicates that the film has very low internal stress. The TEM image shows that pure CBN phase exists on the surface of the film. Several phases of boron nitride were found at the medium implantation dose. It is believed that the transition from the low ordered phases to cBN phase occurred during implantation.     

Synthesis and ceramic conversion of a new oligomeric precursor to boron nitride

A new polyaminoborazine with good solubility was synthesized by ammonolysis reaction of a mixture of B‐chloroborazine, B‐bischloroborazine, and B‐trichloroborazine under mild condition. The oligomer was easily cured at 250°C. The pyrolytic residue of the cured oligomer was investigated with X‐ray photoelectron spectroscopy (XPS), powder X‐ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and thermal gravimetric analysis (TGA). The results indicated that crystalline h‐BN with B/N ratio of 1:1.01 is main in the residue pyrolyzed at 1500°C. Copyright © 2010 John Wiley & Sons, Ltd.