Organic Thin Film Transistors Based on 2,3‐Dimethylpentacene and 2,3‐Dimethyltetracene

2,3‐Dimethylpentacene (DMP) and 2,3‐dimethyltetracene (DMT) were synthesized, characterized and employed as the channel material in the fabrication of thin‐film transistors. The two methyl groups increase the chemical stability of the compounds versus the pristine acene analogues. The crystals maintain herringbone‐like molecular packing, whereas the weak dipole associated with the unsymmetrical molecule induces an anti‐parallel alignment among the neighbors. This structural motif favors layered film growth on SiO₂/Si surface. Thin film transistors prepared on SiO₂/Si and n‐nonyltrichlorosilane‐modified SiO₂/Si at different substrate temperatures were compared. DMP‐based transistors prepared on rubbed n‐nonyltrichlorosilane‐modified SiO₂/Si substrate gave the highest field‐effect mobility of 0.46 cm²/Vs, whereas DMT‐based transistor gave a mobility of 0.028 cm²/Vs.     

Thermally curable organic/inorganic hybrid polymers as gate dielectrics for organic thin‐film transistors

New low‐temperature curable organic/inorganic hybrid polymers were designed and synthesized as gate dielectrics for organic thin‐film transistors (OTFTs). Allyl alcohols were introduced to polyhedral oligomeric silsesquioxane (POSS) via hydrosilyation to produce an alcohol‐functionalized POSS derivative (POSS‐OH). POSS‐OH was then reacted with hexamethoxymethylmelamine at carrying molar ratios at 80 °C in the presence of a catalytic amount of p‐toluenesulfonic acid to give highly cross‐linked network polymers (POSS‐MM). The prepared thin films were smooth and hard after the thermal cross‐linking reaction and had very low leakage currents (<10^?8 A/cm²) with no significant absorption over the visible spectral range. Pentacene‐based OTFTs using the synthesized insulators as gate dielectric layers had higher hole mobilities (up to 0.36 cm²/Vs) than a device using thermally cross‐linked poly(vinyl phenol) and melamine as the gate dielectric layer (0.18 cm²/Vs). © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2014 , 52, 3260–3268     

High performance polymer field‐effect transistors based on polythiophene derivative with conjugated side chain

Poly(3‐[2‐(5‐hexyl‐2‐thienyl) ethenyl]‐2,2′‐bithiophene) ( P2 , see Scheme 1 ) with conjugated thienylvinyl side chain was synthesized by copolymerization of the thiophene units with and without conjugated side chain with Pd‐catalyzed Stille coupling method. For comparison, P1 with the hexyl side chain instead of conjugated side chain was also synthesized. P2 film shows broad absorption in the visible region with absorption edge at about 700 nm. The solution‐processed polymer field‐effect transistors were fabricated and characterized with bottom gate/top contact geometry. The organic field‐effect transistors (OFET) based on P2 showed an average hole mobility of about 0.034 cm²/Vs (the highest value reached 0.061 cm²/Vs) upon annealing at about 180 °C for 30 min, with a threshold voltage of ?1.15 V and an on/off ratio of 10⁴ with n‐octadecyltrichlorosilane (OTS) modified SiO₂ substrate. In comparison, the OFET based on P1 displayed a hole mobility of 8.9 × 10^–4 cm²/Vs and an on/off ratio of 10⁴ with OTS modified SiO₂ substrate. The results indicate that the polythiophene derivative with conjugated thienylvinyl side chain is a promising polymer for the application in polymer field‐effect transistors. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 5304–5312, 2009     

n‐Channel Organic Transistors Processed from Halogen‐Free Solvents: Solvent Effect on Thin‐Film Morphology and Charge Transport

Non‐chlorinated solvents are highly preferable for organic electronic processing due to their environmentally friendly characteristics. Four different halogen‐free solvents, tetrafuran, toluene, meta‐xylene and 1,2,4‐trimethylbenzene, were selected to fabricate n‐channel organic thin film transistors (OTFTs) based on 3‐hexylundecyl substituted naphthalene diimides fused with (1,3‐dithiol‐2‐ylidene)malononitrile groups (NDI3HU‐DTYM2). The OTFTs based on NDI3HU‐DTYM2 showed electron mobility of up to 1.37 cm²·V^?1·s^?1 under ambient condition. This is among the highest device performance for n‐channel OTFTs processed from halogen‐free solvents. The different thin‐film morphologies, from featureless low crystalline morphology to well‐aligned nanofibres, have a great effect on the device performance. These results might shed some light on solvent selection and the resulting solution process for organic electronic devices.     

Spin Self‐Assembled Clay Nanocomposite Passivation Layers Made from a Photocrosslinkable Poly(vinyl alcohol) and Na+‐Montmorillonite Enhance the Environmental Stability of Organic Thin‐Film Transistors

We investigated the effects of the multilayer polymer‐clay nanohybrid passivation films on the stability of pentacene organic thin‐film transistors (OTFTs) exposed to air and UV irradiation. Well‐ordered multilayer films were deposited by the spin‐assisted layer‐by‐layer assembly method using photocrosslinkable poly(vinyl alcohol) with the N‐methyl‐4(4′‐formylstyryl)pyridinium methosulfate acetal group (SbQ‐PVA) and Na⁺‐montmorillonite in a water‐based solution process. When photocrosslinked, these SbQ‐PVA/clay multilayers were found to serve as excellent barriers to O₂ and UV‐light. Moreover, when used as passivation layers, they enhanced the stability of pentacene OTFT devices exposed to air and UV radiation.     

Surface Modification of Nano－SiO2 by Grafting PMMA／PBA

The surface of nano-SiO2 was modified by being encapsulated with hydroxy-propyl-methyl cellulose (HPMC), and then co-grafted with acrylates. The grafting conditions, such as pH of the medium, and initiator concentration have been studied. The modified nano-SiO2 particles were characterized by TEM, DSC and FT-IR spectra. TEM images show that the surface of the nano-particles has been successfully modified by a thick layer of film-like polymer in this way. The DSC results show that the decomposition temperature of modified nano-particles of SIO2 is 90 ℃ higher than that of grafted-on polymer. According to the FT-IR spectra, It is convinced that poly-methyl methacrylate ( PMMA ) and poly-acrylic butyl-ester ( PBA ) were co-grafted onto the surface of nano-SiO2.     

Synthesis and characterization of fused‐thiophene containing naphthalene diimide n‐type copolymers for organic thin film transistor and all‐polymer solar cell applications

Naphthalene diimide copolymers are attractive n‐type materials due to their high electron affinities, high electron mobilities, and exceptional stability. Herein, we report a series of NDI‐fused‐thiophene based copolymers with each copolymer differing in the number of fused thiophenes in the donor monomer. Increasing the number of fused‐thiophene moieties within an NDI‐copolymer backbone is shown to not only enable tuning of the electronic structure but also improve charge mobilities within the active layer of organic field‐effect transistors. Electron mobilities and on/off ratios as high as 0.012 cm² V^?1 s^‐1 and I_on/I_off > 10⁵ were measured from n‐channel thin‐film transistors fabricated using NDI‐xfTh copolymers. Bulk heterojunction solar cell devices were also fabricated from the NDI‐xfTh copolymer series in blends with poly(3‐hexylthiophene) (P3HT) with PNDI‐4fTh ‐ based devices yielding the largest J_sc (0.57 mA cm^?2) and fill factor (55%) in addition to the highest measured PCE for this series (0.13%). © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2013 , 51, 4061–4069     

Novel Conjugated Polymers Based on Dithieno[3,2‐b:6,7‐b]carbazole for Solution Processed Thin‐Film Transistors

Two conjugated polymers (CPs) P‐tCzC12 and P‐tCzC16 comprising alternating dithieno[3,2‐b:6,7‐b]carbazole and 4,4′‐dihexadecyl‐2,2′‐bithiophene units have been designed and synthesized. Upon thermal annealing, they can form ordered thin films in which the polymer backbones dominantly adopted an edge‐on orientation respective to the substrate with a lamellar spacing of ≈24 Å and a π‐stacking distance of ≈3.7 Å. Organic thin‐film transistors (OTFTs) were fabricated by solution casting. A hole mobility of 0.39 cm² V⁻¹s⁻¹ has been demonstrated with P‐tCzC16. This value is the highest among the CPs containing heteroacenes larger than 4 rings.     

Enhanced Performance of Benzothieno[3,2‐b]thiophene (BTT)‐Based Bottom‐Contact Thin‐Film Transistors

Three new benzothieno[3,2‐b]thiophene ( BTT ; 1 ) derivatives, which were end‐functionalized with phenyl ( BTT‐P ; 2 ), benzothiophenyl ( BTT‐BT ; 3 ), and benzothieno[3,2‐b]thiophenyl groups ( BBTT ; 4 ; dimer of 1 ), were synthesized and characterized in organic thin‐film transistors (OTFTs). A new and improved synthetic method for BTT s was developed, which enabled the efficient realization of new BTT ‐based semiconductors. The crystal structure of BBTT was determined by single‐crystal X‐ray diffraction. Within this family, BBTT , which had the largest conjugation of the BTT derivatives in this study, exhibited the highest p‐channel characteristic, with a carrier mobility as high as 0.22 cm² V^?1 s^?1 and a current on/off ratio of 1×10⁷, as well as good ambient stability for bottom‐contact/bottom‐gate OTFT devices. The device characteristics were correlated with the film morphologies and microstructures of the corresponding compounds.     

High performance semiconducting polymers containing bis(bithiophenyl dithienothiophene)‐based repeating groups for organic thin film transistors

New dithienothiophene‐containing conjugated polymers, such as poly(2,6‐bis(2‐thiophenyl‐3‐dodecylthiophene‐2‐yl)dithieno[3,2‐b;2′,3′‐d]thiophene, 4 and poly(2,6‐bis (2‐thiophenyl‐4‐dodecylthiophene‐2‐yl)dithieno[3,2‐b;2′,3′‐d]thiophene, 8 have been successfully synthesized via Stille coupling reactions using dodecyl‐substituted thiophene‐based monomers, bistributyltin dithienothiophene, and bistributyltin bithiophene; these polymers have been fully characterized. The main difference between the two polymers is the substitution position of the dodecyl side chains in the repeating group. Grazing‐incidence X‐ray diffraction (GI‐XRD) gave clear evidence of edge‐on orientation of polycrystallites to the substrate. The semiconducting properties of the two polymers have been evaluated in organic thin film transistors (OTFTs). The two conjugated polymers 4 and 8 exhibit fairly high hole carrier mobilities as high as μ_ave = 0.05 cm²/Vs (I_ON/OFF = 3.42 × 10⁴) and μ_ave = 0.01 cm²/Vs, (I_ON/OFF = 1.3 × 10⁵), respectively, after thermal annealing process. The solvent annealed films underwent reorganization of the molecules to induce higher crystallinity. Well‐defined atomic force microscopy (AFM) topography supported a significant improvement in TFT device performance. The hole carrier mobilities of the solvent annealed films are comparable to those obtained for a thermally annealed sample, and were one‐order higher than those obtained with a pristine sample. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2010     

A Solution‐Processed Air‐Stable Perylene Diimide Derivative for N‐type Organic Thin Film Transistors

For future all‐soluble organic thin film transistor (OTFT) applications, a new soluble n‐type air‐stable perylene diimide derivative semiconductor material with (trifluoromethyl)benzyl groups (TC–PDI–F) is synthesized. The film is formed by spin‐coating in air and optimized for OTFT fabrications. The transistor characteristics and air‐stability of the TC–PDI–F OTFTs is measured to investigate the feasibility of using solution‐processed TC–PDI–F for future OTFT applications. For all‐solution OTFT process applications, the transistor characteristics are demonstrated by using TC–PDI–F as an n‐type semiconductor material and liquid‐phase‐deposited SiO₂ (LPD–SiO₂) as a gate dielectric material. All processes (except material synthesis and electrode deposition) and electrical measurements are conducted in air.     

Vapor‐Surface Sol‐Gel Deposition of Titania Alternated with Protein Adsorption for Assembly of Electroactive,Enzyme‐Active Films

Combining vapor‐surface sol‐gel deposition of titania with alternate adsorption of oppositely charged iron heme proteins provided ultrathin {TiO₂/protein}_n films with reversible voltammetry extended to 15 TiO₂/protein bilayers, more than twice that of more conventional polyion‐protein or nanoparticle‐protein films made by alternate layer‐by‐layer adsorption. Catalytic activity toward O₂, H₂O₂, and NO was also improved significantly compared to the conventionally fabricated films. The method involves vaporization of titanium butoxide into thin films of water, forming porous TiO₂ sol‐gel layers. Myoglobin (Mb), hemoglobin (Hb), and horseradish peroxidase (HRP) were assembled by adsorption alternated with the vapor‐deposited TiO₂ layers. Improved electrochemical and catalytic performance may be related to better film permeability leading to better mass transport within the films, as suggested by studies with soluble voltammetric probes, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The electrochemical and electrocatalytic activity of the films can be controlled by tailoring the amount of water with which the metal alkoxide precursor vapor reacts and the number of bilayers deposited in the assembly.     

Zinc (II), palladium (II) and cadmium (II) complexes containing 4‐methoxy‐N‐(pyridin‐2‐ylmethylene) aniline derivatives: Synthesis,characterization and methyl methacrylate polymerization

A series of Zn (II), Pd (II) and Cd (II) complexes, [(L) _n MX ₂ ] _m (L = L‐a–L‐c; M = Zn, Pd; X = Cl; M = Cd; X = Br; n, m = 1 or 2), containing 4‐methoxy‐N‐(pyridin‐2‐ylmethylene) aniline ( L‐a ), 4‐methoxy‐N‐(pyridin‐2‐ylmethyl) aniline ( L‐b ) and 4‐methoxy‐N‐methyl‐N‐(pyridin‐2‐ylmethyl) aniline ( L‐c ) have been synthesized and characterized. The X‐ray crystal structures of Pd (II) complexes [L ₁ PdCl ₂ ] (L = L‐b and L‐c) revealed distorted square planar geometries obtained via coordinative interaction of the nitrogen atoms of pyridine and amine moieties and two chloro ligands. The geometry around Zn (II) center in [(L‐a)ZnCl ₂ ] and [(L‐c)ZnCl ₂ ] can be best described as distorted tetrahedral, whereas [(L‐b) ₂ ZnCl ₂ ] and [(L‐b) ₂ CdBr ₂ ] achieved 6‐coordinated octahedral geometries around Zn and Cd centers through 2‐equivalent ligands, respectively. In addition, a dimeric [(L‐c)Cd(μ ‐ Br)Br] ₂ complex exhibited typical 5‐coordinated trigonal bipyramidal geometry around Cd center. The polymerization of methyl methacrylate in the presence of modified methylaluminoxane was evaluated by all the synthesized complexes at 60°C. Among these complexes, [(L‐b)PdCl ₂ ] showed the highest catalytic activity [3.80 × 10⁴ g poly (methyl methacrylate) (PMMA)/mol Pd hr^?1], yielding high molecular weight (9.12 × 10⁵ g mol^?1) PMMA. Syndio‐enriched PMMA (characterized using ¹H‐NMR spectroscopy) of about 0.68 was obtained with T_g in the range 120–128°C. Unlike imine and amine moieties, the introduction of N‐methyl moiety has an adverse effect on the catalytic activity, but the syndiotacticity remained unaffected.     

The effect of bias-temperature stress on Na<Superscript>+</Superscript> incorporation into thin insulating films

The action of Na⁺ incorporation into thin insulating films and transport therein under influence of a bias voltage and temperature (BT stress) is the subject of this work. Deposited onto highly n-doped Si wafers, the insulators get BT stressed and subsequently investigated by means of time-of-flight–secondary ion mass spectrometry (ToF-SIMS). A thin PMMA film, spin-coated onto the insulator, serves as host matrix for a defined amount of Na⁺, provided via sodium triflate. Combining BT stress and ToF-SIMS depth profiling enables the unambiguous detection of Na⁺, incorporated into the insulating material. The insulators of interest vary in their nitride content: SiO₂, SiO_xN_y, and Si₃N₄. For SiO₂, it is shown that once a threshold BT stress is exceeded, Na⁺ gets quantitatively incorporated from PMMA into the underlying insulator, finally accumulating at the SiO₂/Si interface. A quantitative assessment by combination of Butler–Volmer kinetics with hopping dynamics reveals activation energies of E _a = 1.55 − 2.04 eV for Na⁺ transport in SiO₂ with varying thickness. On the other hand, SiO_xN_y and Si₃N₄ films show a different Na⁺ incorporation characteristic in this type of experiment, which can be explained by the higher coordination of nitrogen and hence the reduced Na⁺ permeability within these insulators.     

A High‐Performance Organic Field‐Effect Transistor Based on Platinum(II) Porphyrin: Peripheral Substituents on Porphyrin Ligand Significantly Affect Film Structure and Charge Mobility

Organic field‐effect transistors incorporating planar π‐conjugated metal‐free macrocycles and their metal derivatives are fabricated by vacuum deposition. The crystal structures of [H₂(OX)] (H₂OX=etioporphyrin‐I), [Cu(OX)], [Pt(OX)], and [Pt(TBP)] (H₂TBP=tetra‐(n‐butyl)porphyrin) as determined by single crystal X‐ray diffraction (XRD), reveal the absence of occluded solvent molecules. The field‐effect transistors (FETs) made from thin films of all these metal‐free macrocycles and their metal derivatives show a p‐type semiconductor behavior with a charge mobility (μ) ranging from 10^?6 to 10^?1 cm² V^?1 s^?1. Annealing the as‐deposited Pt(OX) film leads to the formation of a polycrystalline film that exhibits excellent overall charge transport properties with a charge mobility of up to 3.2×10^?1 cm² V^?1 s^?1, which is the best value reported for a metalloporphyrin. Compared with their metal derivatives, the field‐effect transistors made from thin films of metal‐free macrocycles (except tetra‐(n‐propyl)porphycene) have significantly lower μ values (3.0×10^?6–3.7×10^?5 cm² V^?1 s^?1).     

Novel isolated,L‐amino acid‐ligated rhodium catalysts that induce highly helix‐sense‐selective polymerization of an achiral 3,4,5‐trisubstituted phenylacetylene

Two novel chiral well‐defined rhodium complexes, Rh(cod)(L‐Phe) (cod = 1,5‐cyclooctadiene, Phe = phenylalanine) and Rh(cod)(L‐Val) (Val = valine) were synthesized, isolated by recrystallization, and characterized. The helix‐sense‐selective polymerization (HSSP) of an achiral 3,4,5‐trisubstituted phenylacetylene, p‐dodecyloxy‐m,m‐dihydroxyphenylacetylene (DoDHPA) was examined by using the two Rh complexes as catalysts. These catalysts provided high molecular weight polymers (M_w 28 × 10⁴?45 × 10⁴) in about 40%–85% yields. The resulting polymers exhibited a bisignated CD signal at about 300 nm and a broad signal around 470 nm, indicating that they have preferential one‐handed helical structure. The present catalysts achieved larger molar ellipticity up to [θ]₃₁₀ = 13.0 × 10⁴ deg cm²/dmol than those with binary chiral catalytic systems, [Rh(cod)Cl]₂/(L‐phenylalaninol), [Rh(cod)Cl]₂/(L‐valinol), and [Rh(nbd)Cl]₂/(R)‐PEA. All these results manifest that the present, well‐defined Rh complexes serve as excellent catalysts for the HSSP of DoDHPA. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54, 2346–2351     

Fabrication of Fe(CN)63− Functionalized PDDA/CdTe Layer‐by‐layer Film with Good Electron Transfer Ability

(PDDA/CdTe)_n layer‐by‐layer (LBL) film immobilized with Fe(CN)₆^3? was fabricated on the gold electrode. Electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV) were used to investigate the electrochemical properties of this film. The peak current of the immobilized Fe(CN)₆^3? increased as the number of the bilayers increased and was proportional to the scan rate. Compared with pure (PDDA/CdTe)_n and (PDDA/PSS)_n LBL film, Fe(CN)₆^3? immobilized (PDDA/CdTe)_n LBL film had good electron transfer ability. The immobility of Fe(CN)₆^3? into the film was attributed to its interaction with Cd²⁺ on the surface of CdTe QDs. Fe(CN)₆^3? also can interact with other metal ions, which would make Fe(CN)₆^3? release from the film. The concentrations of metal ions will affect the CV response of Fe(CN)₆^3? immobilized LBL film. It has provided a novel prototype of device or sensor for quantitative detection of metal ions.     

Two Coordination Polymers based on 2‐Ethyl‐1H‐imidazole‐4,5‐dicarboxylic Acid and 1,3‐Bis(4‐pyridyl)propane: Synthesis,Crystal Structures,and Photoluminescent Properties

Two coordination polymers, [Cd(Heidc)(bpp)]_n ( 1 ) and [Zn₃ (eidc)₂(bpp)(H₂O)₂] · 2H₂O}_n ( 2 ) (H₃eidc = 2‐ethyl‐4,5‐imidazole dicarboxylic acid, bpp = 1,3‐bis(4‐pyridyl)propane) were hydrothermally synthesized and characterized by elemental analysis, IR, spectroscopy single‐crystal X‐ray diffraction, and thermogravimetric analyses. Compound 1 features a 2D layer formed by C–H ··· π stacking interactions between adjacent chains, whereas compound 2 shows a 3D (8³)₂(8⁵.10)‐tfc framework constructed of the 2D (6,3) layer. The result demonstrates that the central metal atoms play a key role in governing the coordination motifs. Moreover, solid‐state properties such as thermal stabilities and photoluminescence of 1 and 2 were also investigated.     

Amphiphilic silica/fluoropolymer nanoparticles: Synthesis,tem‐responsive and surface properties as protein‐resistance coatings

A series of amphiphilic silica/fluoropolymer nanoparticles of SiO₂‐g‐P(PEGMA)‐b‐P(12FMA) were prepared by silica surface‐initiating atom transfer radical polymerization (SI‐ATRP) of poly(ethylene glycol) methyl ether methacrylate (PEGMA) and poly dodecafluoroheptyl methacrylate (P12FMA). Their amphiphilic behavior, lower critical solution temperature (LCST), and surface properties as protein‐resistance coatings were characterized. The introduction of hydrophobic P(12FMA) block leads SiO₂‐g‐P(PEGMA)‐b‐P(12FMA) to form individual spherical nanoparticles (～150 nm in water and ～170 nm in THF solution) as P(PEGMA)‐b‐P(12FMA) shell grafted on SiO₂ core (～130 nm), to gain obvious lower LCST at 36–52 °C and higher thermostability at 290–320 °C than SiO₂‐g‐P(PEGMA) (LCST = 78–90 °C, T_d = 220 °C). The water‐casted SiO₂‐g‐P(PEGMA)‐b‐P(12FMA) films obtain much rougher surface (125.3–178.4 nm) than THF‐casted films (11.5–16.9 nm) and all SiO₂‐g‐P(PEGMA) films (26.8–31.3 nm). Therefore, the water‐casted surfaces exhibit obvious higher water adsorption amount (Δf = ?494 ～ ?426 Hz) and harder adsorbed layer (viscoelasticity of ΔD/Δf = ?0.28 ～ ?0.36 × 10^?6/Hz) than SiO₂‐g‐P(PEGMA) films, but present loser adsorbed layer than THF‐casted films (ΔD/Δf = ?0.29 ～ ?0.63 × 10^?6/Hz). While, the introduction of P(12FMA) segments does not show obviously reduce in the protein‐repelling adsorption of SiO₂‐g‐P(PEGMA)‐b‐P(12FMA) films (△f = ?15.7 ～ ?22.3 Hz) compared with SiO₂‐g‐P(PEGMA) films (△f = ?8.3 ～ ?11.3 Hz) and no obvious influence on water adsorption of ancient stone. Therefore, SiO₂‐g‐P(PEGMA)‐b‐P(12FMA) is suggested to be used as protein‐resistance coatings. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54, 381–393     

Enhanced Performance of Solution‐Processed TESPE‐ADT Thin‐Film Transistors

A solution‐processed anthradithiophene derivative, 5,11‐bis(4‐triethylsilylphenylethynyl)anthradithiophene (TESPE‐ADT), is studied for use as the semiconducting material in thin‐film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin‐coating and drop‐casting) on various gate dielectrics as well as additional post‐treatment are employed on thin films of TESPE‐ADT, and p‐channel OTFT transport with hole mobilities as high as ～0.12 cm² V^?1 s^?1 are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.