A novel super compact half‐mode substrate‐integrated waveguide filter using modified complementary split‐ring resonator

A novel super compact filter based on half‐mode substrate‐integrated waveguide (HMSIW) technology loaded by the modified complementary split‐ring resonator (MCSRR) is proposed. The working principle of the proposed filter is based on the evanescent‐mode propagation technique. According to this technique, by loading the complementary split‐ring resonator (CSRR) on the metal surface of the substrate‐integrated waveguide (SIW) structure, an additional passband below the SIW cutoff frequency can be obtained. In order to miniaturize the physical size of the conventional CSRR, a new method is introduced. In the proposed MCSRR unit‐cell, the meander slots are carved inside all of the interior space of the ring. Accordingly, the length of the slot is increased which leads to an increase in the inductor and capacitor of the proposed structure without occupying the extra space. Therefore, the electrical size of the proposed MCSRR unit‐cell is reduced. Consequently, the resonance frequency of the proposed MCSRR unit‐cell is decreased compared to the conventional CSRR with the same sizes. Namely, the lower resonance frequencies can be achieved by using this technique without increasing the size of the unit‐cell. In order to confirm the miniaturization technique, two HMSIW filters loaded by the proposed MCSRR unit‐cell are designed, fabricated, and experimental verifications are provided. The results show that a miniaturization about 67% is achieved.     

A piezoelectric transducer‐tuned microstrip‐ring resonator oscillator operating at the second resonant mode of the ring resonator

A microstrip open‐loop resonator oscillator operating at even modes is proposed. The even mode of the ring circuit can be predicted by using a simple transmission‐line model. The new oscillator has a characteristic similar to that of a push‐push oscillator. In addition, in comparison with the push‐push oscillator, the new oscillator with one active device can minimize the size and lower the cost. A voltage‐controlled piezoelectric transducer (PET) is used to vary the resonant frequencies of the ring resonator, which in turn tunes the oscillator with a good tuning range of 4.9% at around 12.1 GHz. This tuned oscillator should have many applications in wireless systems. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2005.     

A novel compact wideband filter using three‐mode dual‐ring resonator

A novel compact wideband filter using three‐mode dual‐ring resonator is presented in this article. The resonator is constructed by two quarter wavelength transmission lines and a cascaded half wavelength dual‐ring. Formulae based on even‐ and odd‐mode analysis are derived to analyze the locations of the transmission poles and zeros of the resonator. Due to the transmission zeros in the lower and upper stopbands, the proposed filter exhibits sharp attenuations near the passband as well as very wide stopband. The filter is successfully realized by full wave EM simulation and fabricated. The measured responses of the filter agree well with the design simulation, and show that the fabricated filter has an insertion loss of better than 1.5 dB in the passband and two rejections of greater than 20 dB in the stopbands from 0 to 10GHz.     

A balanced dual‐band bandpass filter with independently tunable differential‐mode frequencies

A balanced dual‐band bandpass filter (BPF) with independently tunable differential‐mode (DM) frequencies is proposed in this letter. The proposed BPF is composed of complementary split‐ring resonators (CSRRs) etched on the ground and varactors loaded on the resonators. A balanced stepped‐impedance microstrip‐slotline transition structure is introduced to transfer the DM signals successfully and block the common‐mode (CM) signals transmission. Good DM transmission and CM suppression can be achieved. Moreover, by changing the reverse bias voltages of the varactors loaded on coupling CSRRs, two DM resonant frequencies of the proposed balanced BPF can be tuned independently. To verify the feasibility of the design method, a balanced BPF with DM frequency ranging from 0.80 GHz to 1.12 GHz and 1.55 GHz to 2.05 GHz is fabricated and measured. Good agreement between the simulation and measurement results demonstrate the validity of the design.     

Ultra‐wide stopband low‐pass filter using symmetrical cascaded modified hairpin resonators

An elliptical function low‐pass filter (LPF) with ultra wide stopband and sharp cutoff frequency is proposed. This filter is composed of symmetrical cascaded modified hairpin resonators and U‐shaped resonators. The transition band is from 1 to 1.21 GHz with ?3 and ?20 dB, respectively. For this filter, the return loss is better than 17 dB in 80% of passband width, where the insertion loss is less than 0.3 dB. The band‐stop rejection is greater than 20 dB from 1.21 to 26.35 GHz and 40 dB from 1.35 to 12.5 GHz. To validate the design and analysis, the proposed LPF has been designed and fabricated on a 20 mil thick RO4003 substrate with a relative dielectric constant 3.38 and loss tangent of 0.0021. The filter is evaluated by experiment and simulation with a good agreement. © 2013 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:314–321, 2014.     

一种CMOS电流饥饿型环形压控振荡器

设计了一种基于CSMC的0.5μm工艺的电流饥饿型环形压控振荡器。仿真工具采用Cadence Spectre,仿真结果表明,振荡器相位噪声达到了-105.432dBc/Hz@1MHz。     

A novel triple notch‐bands ultra wide‐band band‐pass filters using parallel multi‐mode resonators and CSRRs

This article discusses a technique based on combination of multimode resonators (MMR) and complementary split ring resonators (CSRR) to design multi notch‐bands ultra wide‐band (UWB) band‐pass filters (BPF). The proposed structure consists of two parallel multimode resonators, resulting in a dual notch‐band UWB BPF, integrated with a single cell of CSRR to realize the third notch‐band. The mechanism of realizing the notch‐bands is mathematically presented and a triple notch‐bands UWB BPF is designed, simulated and fabricated. The overall size of the proposed filter is reported to be around 36 × 7.7 mm² where a size reduction of around 35% is demonstrated in comparison to the conventional filter. © 2013 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:375–381, 2014.     

A compact realization of composite low‐pass filter for monolithic microwave integrated circuit applications

A compact realization of composite low‐pass filter is presented in this article. The filter is realized using on‐chip spiral inductors and metal–insulator–metal capacitors and features an attenuation pole near the cutoff frequency leading to a sharper attenuation response. As well, it offers good matching properties in the passband. Space‐mapping‐based algorithm is used in the design/optimization of spiral inductors toward achieving high quality factors at the filter cutoff frequency. The realization of the proposed filter is compact in size, suitable for monolithic microwave integrated circuit applications, and exhibit broad upper stopband frequency characteristics. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2012.     

Design and implementation of a practical semi‐lumped high power low‐pass filter

In this article, a compact, semi‐lumped and high power low‐pass filter in VHF band frequency is designed, fabricated, and measured. A semi‐lumped structure is used to decrease the size of the filter and improve its power handling. In high power analysis, all effects of critical points in distributed and lumped structures are considered. The experimental measurements show close agreement with the simulation results. This filter has a cut off frequency at 180 MHz, 0.02 dB ripples in pass band, return loss better than 21 dB in the pass band, 0.2 dB insertion losses, 1.6 dB/MHz shape factor, a 75% miniaturization against conventional structures with distributed elements, and wide out of band rejection. Moreover, 10 and 1 KW are the peak power and the average power handling of the filter. © 2014 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:605–614, 2014.     

A highly integrated AMLCD with low‐voltage operation

A highly integrated low‐temperature polysilicon AMLCD has been designed that operates from a 3‐V power supply and has a low‐voltage digital interface. This has been achieved by reducing the threshold voltage of the TFTs and integrating digital column drive circuits and charge‐pump circuits onto the display substrate. In standby mode, the display is capable of retaining an image without the need for external signals through the integration of dynamic‐memory circuits within the pixels of the display.     

Microstrip stepped‐impedance ring all‐pass filter and wideband 90° phase shifter

A new all‐pass filter (APF) is proposed. The APF is based on a symmetrical ring, consisting of four sections of transmission line, which are identical in electrical length, different in characteristic impedance. Two input/output ports are connected orthogonally to the ring. The APF is analyzed by using the odd‐even model, and the all‐pass condition is then theoretically obtained. Meeting the condition, the circuit is all‐pass in frequency, but nonlinear in transmission phase. The nonlinear transmission phase with frequency may be adjusted by changing the lines' impedances, while remaining the all‐pass property. Then the APF is used to design a wideband 90° differential phase shifter with adjustable bandwidth. Samples are designed, fabricated and measured. Good agreements are achieved among the theoretic, numerical and experimental results. © 2013 Wiley Periodicals, Inc. Int J RF and Microwave CAE 24:191–195, 2014.     

Hilbert‐shaped complementary ring resonator and application to enhanced‐performance low pass filter with high selectivity

In this article, a novel single negative metamaterial (MTM) transmission line (TL) consisting of a Hilbert‐shaped complementary ring resonator (H‐CRR) on the ground plane is initially presented and studied in depth. Then based on the proposed MTM TL, a novel six‐section Hi‐Lo microstrip low‐pass filter (LPF) with a cut‐off frequency 2.5 GHz is developed, fabricated, and measured. Measurement results indicate that: by integrating H‐CRR, the selectivity has been significantly improved which is 77.3 dB/GHz due to the single negative permittivity; by etching a crown square on low‐impedance section, the bandwidth characterized by 20 dB return loss was obviously enhanced by 26.2% and the maximal sidelobe level of in‐band return loss was reduced from 22 to 24.6 dB. What' more, the developed LPF achieved a 36.3% size reduction with respect to its conventional counterpart. The design concept, which was confirmed by the measurement data, is of practical value and can be popularized in other microwave devices where high selectivity is requested. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011.     

PVT‐compensated low‐voltage and low‐power CMOS LNA for IoT applications

In this paper, a low‐noise amplifier (LNA) with process, voltage, and temperature (PVT) compensation for low power dissipation applications is designed. When supply voltage and LNA bias are close to the subthreshold, voltage has significant impact on power reduction. At this voltage level, the gain is reduced and various circuit parameters become highly sensitive to PVT variations. In the proposed LNA circuit, in order to enhance efficiency at low supply voltage, the cascade technique with g_m boosting is used. To improve circuit performance when in the subthreshold area, the forward body bias technique is used. Also, a new PVT compensator is suggested to reduce sensitivity of different circuit's parameters to PVT changes. The suggested PVT compensator employs a current reference circuit with constant output regarding temperature and voltage variations. This circuit produces a constant current by subtracting two proportional to absolute temperature currents. At a supply voltage of 0.35 V, the total power consumption is 585 μW. In different process corners, in the proposed LNA with PVT compensator, gain and noise figure (NF) variations are reduced 10.3 and 4.6 times, respectively, compared to a conventional LNA with constant bias. With a 20% deviation in the supply voltage, the gain and noise NF variations decrease 6.5 and 34 times, respectively.     

A fast 2‐transistor current‐mode AMOLED pixel

Abstract— Active‐matrix OLEDs are thinner and potentially more energy efficient than AMLCDs; however, most current AMOLED pixel designs are also excessively complicated. This paper compares the operating principles and performance of the four basic types of OLED pixels: converter pixels, system compensation pixels, compensated pixels, and current‐mode pixels. A new current‐mode pixel is described that is fast, provides excellent compensation for processing variations, and yet retains the simplicity and manufacturing advantages of the simplest 2‐transistor OLED pixels. Like other current‐mode pixels, this sequential current mirror pixel provides excellent compensation for variations in TFT V^t, TFT mobility, and non‐uniformities in the OLED itself. However, unlike other current‐mode pixels that are too slow for use in large displays, this sequential current mirror pixel can operate with a voltage precharge in a superlinear mode to reduce data line settling delays to less than 3 μsec. Like the simplest uncompensated pixels, the compensated sequential current mirror pixel requires only two TFTs, a single data line, and a single select line.     

A tunable third‐order bandpass filter based on combining dual‐mode square‐shaped substrate integrated waveguide resonator with triangular‐shaped resonator

A frequency reconfigurable third‐order bandpass filter based on two substrate integrated waveguide (SIW) cavities is presented in this article. The purposed filter consists of a dual‐mode square‐shaped resonator and a triangular‐shaped resonator. In the square‐shaped cavity, four lumped capacitors are loaded as electrical tuning elements in the area where the electric fields of diagonal TE₂₀₁ and TE₁₀₂ modes are strongest. And an another capacitor is loaded at the suitable region of the triangular‐shaped cavity. Square‐shaped cavity introduces two transmission zeros and the triangular‐shaped cavity can suppress out‐of‐band spurious modes. The method that combines the resonators with different shapes and multiple modes into an organic whole cannot only achieve synchronous tuning but also have complementary advantages and improve out‐of‐band rejection. To verify its practicality, a SIW reconfigurable bandpass filter is simulated when the capacitance value varies from 0 to 1.4 pF and measured at 0.7, 0.8, and 0.9 pF, respectively. Measured results show that when the center frequency is tuned from 3.42 to 3.52 GHz, the proposed filter exhibits good tuning performance with insertion loss of less than 2.5 dB and return loss of better than 10 dB, which is suitable for fifth‐generation communication system.     

Wide stopband harmonic suppressed low‐pass filter with novel DGS

In this article, a wide stopband 20 dB harmonically suppressed low‐pass filter (LPF) using novel defected ground structures (DGSs) is proposed. The DGSs has been analyzed as a low pass filter which shows a significant harmonics suppression in the stopband. The lumped parameter equivalent of the DGSs has been developed to show its effectiveness. The modified equivalent circuit model of the filter helps in placing the transmission zero near ?3 dB cutoff frequency. The LPF is designed on a 0.10 λ_g× 0.09 λ_g substrate size where λ_g is guided wavelength at ?3 dB cut‐off frequency (f_c) equal to1 GHz. The simulation shows a 20 dB harmonic suppression up to 50 f_c. The prototype of the LPF has been developed and with the available vector network analyser, the S‐parameters have been measured upto 20 GHz (20 f_c).The state of the art comparison of the LPF shows a high figure of merit equal to 26 250 which is higher than many recently published works.     

A compact dual‐band crossover using coplanar‐waveguide‐fed dual‐mode ring resonators

In this article, a compact dual‐band crossover using dual‐mode ring resonators by Coplanar‐Waveguide (CPW)‐Fed scheme is proposed. It contains 2 homocentric square ring resonators on the top layer to obtain the dual‐band responses. CPW feeding lines and open stubs are placed on the bottom layer to feed the ring resonators and adjust coupled strength. The center frequencies and bandwidths for each passband can be individually controlled easily. To prove the design concept, a compact dual‐band crossover operated at 1.57 and 2.45 GHz is designed and fabricated. The measured results show good agreement with the simulation ones results a wide frequency range.     

Half mode substrate‐integrated waveguide‐loaded evanescent‐mode bandpass filter

In this article, a filter size reduction of 46% is achieved by reducing a substrate‐integrated waveguide (SIW)‐loaded evanescent‐mode bandpass filter to a half‐mode SIW (HMSIW) structure. SIW and HMSIW filters with 1.7 GHz center frequency and 0.2 GHz bandwidth were designed and implemented. Simulation and measurements of the proposed filters utilizing combline resonators have served to prove the underlying principles. SIW and HMSIW filter cavity areas are 11.4 and 6.2 cm², respectively. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2013.     

Compact quad‐band band‐pass filters using stepped‐impedance coupled‐line resonators

In this article, compact quad‐band band‐pass filters are realized by using stepped‐impedance coupled‐line quad‐mode resonators (SICLQMRs). The compactness of the quad‐mode resonator relies in its folded structure without extra space between the parallel lines. Unlike stepped‐impedance resonators, SICLQMRs provide more design freedoms for controlling the four resonating frequencies since the even‐ and odd‐mode equivalents can be separately assigned with characteristic impedances. Internal and external couplings are also parallel couplings, resulting in very compact dimensions of the filters. Simulated and measured S parameters are compared with good agreement, demonstrating the feasibility of the design.     

Bandwidth and gain improvements of low‐profile H‐shaped microstrip patch antenna under quadruple‐mode resonance

A wideband low profile H‐shaped microstrip patch antenna (MPA) with reallocated quadruple‐mode resonance is presented for indoor wireless communication application. In this paper, the TM₂₀ (mode 1), TM₀₂ (mode 2), TM₂₂ (mode 3), and additionally notch mode 4 of the proposed MPA are simultaneously employed. First, the rectangular radiating patch is reshaped as an H‐shaped radiator so as to separate a pair of degenerate modes (mode 1 and mode 2). Then, a pair of linear notches is cut on the diagonal of the patch to excite an additional notch resonance (mode 4). Finally, in order to improve the frequency of mode 1, four shorting pins are placed at the four corners of the H‐shaped patch. Therefore, the bandwidth of the antenna is dramatically increased up by utilizing four resonant modes (modes 1, 2, 3, and 4). A prototype of H‐shaped patch antenna with notches and shorting pins is manufactured and measured. The results show that the antenna achieves a broad bandwidth of about 31.7% (2.31‐3.18 GHz), and its profile is only 0.036 wavelength of center frequency. It is particularly noticed that a relative high gain of around 9.8 dBi is successfully acquired, while keeping relative stable dual‐beam radiation patterns.