Chemical Vapor Infiltration of TiB2-Matrix Composites

The efficiency of the Hall–Heroult electrolytic reduction of aluminum can be substantially improved by the use of a TiB₂ cathode. The use of TiB₂ components, however, has been hampered by the brittle nature of the material and the grain boundary attack of sintering-aid phases by molten aluminum. In the current work, TiB₂ is toughened through the use of reinforcing fibers, with chemical vapor infiltration used to produce the TiB₂ matrix. In early efforts it was observed that the formation of TiB₂ from chloride precursors at fabrication temperatures below 900–1000°C may have allowed the retention of destructive levels of chlorine. At higher fabrication temperatures (>1000°C), using appropriate infiltration conditions as determined from the use of a process model, TiB₂/THORNEL P-25 fiber composites have been fabricated in 20 h. The improved composite material has been demonstrated to be stable in molten aluminum in short-duration (24 h) tests.     

Chemical Vapor Deposition of Polycrystalline Al2O3

Polycrystalline Al₂O₃ was chemically vapor-deposited onto sintered Al₂O₃ substrates by reaction of AlCl₃ with (1) H₂O, (2) CO:H₂, and (3) O₂ at 1000° and 1500°C and 0.5 and 5.0 torr. Although the thermodynamics of all these reactions predict the formation of solid Al₂O₃, the deposition rate of the first reaction was considerably greater than that of the second. The third reaction was so slow that no measurable deposit was formed in 6 h at 1500°C. Formation of dense deposits of α-Al₂O₃ was favored by increasing temperature and decreasing pressure. Microstructural examination of the dense deposits showed long columnar grains, the largest of which extended through the deposit from the substrate to the surface.     

Characterization of Photoluminescent (Y1–xEux)2O3 Thin Films Prepared by Metallorganic Chemical Vapor Deposition

The purpose of this study was to identify and correlate the microstructural and luminescence properties of europium-doped Y₂O₃ (Y_{1– x} Eu _x )₂O₃ thin films deposited by metallorganic chemical vapor deposition (MOCVD), as a function of deposition time and temperature. The influence of deposition parameters on the crystallite size and microstructural morphology were examined, as well as the influence of these parameters on the photoluminescence emission spectra. (Y_{1– x} Eu _x )₂O₃ thin films were deposited onto (111) silicon and (001) sapphire substrates by MOCVD. The films were grown by reacting yttrium and europium tris(2,2,6,6-tetramethyl–3,5-heptanedionate) precursors with an oxygen atmosphere at low pressures (5 torr (1.7 × 10³ Pa)) and low substrate temperatures (500°–700°C). The films deposited at 500°C were smooth and composed of nanocrystalline regions of cubic Y₂O₃, grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600°C developed, with increasing deposition time, from a flat, nanocrystalline morphology into a platelike growth morphology with [111] orientation. Monoclinic (Y_{1– x} Eu _x )₂O₃ was observed in the photoluminescence emission spectra for all deposition temperatures. The increase in photoluminescence emission intensity with increasing postdeposition annealing temperature was attributed to the surface/grain boundary area-reduction effect.     

Chemical Vapor Deposition of CuOx Films by Cul and O2: Role of Cluster Formation on Film Morphology

CuO _x films were deposited on silica substrates by the chemical vapor deposition (CVD) method, using CuI and O₂ as source gases at low pressure in a tubular reactor. The growth mechanism to obtain a dense and uniformly distributed (in the axial direction in a tubular reactor) film was investigated. It was found that the occurrence of homogenous nucleation caused an abrupt increase of deposition rate and made the film porous. Homogeneous nucleation can be prevented by properly selecting reactant concentration, reactor temperature, and reactor diameter. Based on an aerosol diffusion theory from laminar pipe flow, a method of predicting cluster size in this CVD reaction system was proposed. The result showed that the clusters formed by homogeneous nucleation had an average size of about 1 nm in diameter.     

Polymeric Cyanoborane, (CNBH2)n: Single Source for Chemical Vapor Deposition of Boron Nitride Films

Polymeric cyanoborane, (CNBH₂) _n , is a material readily prepared by passing hydrogen chloride through an ether suspension of sodium cyanotrihydroborate. This polymeric material was volatilized in a CVD reactor to produce, at 600°C, amorphous films containing boron, nitrogen, and carbon. Residual carbon present in the films was removed by ammonia treatment at 800°C, producing nearly stoichiometric boron nitride films that were adherent to a variety of substrates including silicon.     

Formation of Nanometric TiB2 from TiO2

Titanium diboride can be produced by ball-milling a mixture of TiO₂, B₂O₃, and Mg metal for between 10 and 15 h. The reaction was found to be completed during the milling with no evidence of residual Mg. The unwanted phase, MgO, was readily removed by leaching in acid. The leached powder obtained after 15 h milling had a particle size of <200 nm and was highly faceted. The particle size decreased to ∼50 nm after 100 h milling and seemed to be relatively monodisperse. Scherrer calculation of the crystallite size showed that the product particles were probably single crystal.     

Pb-Diffusion Barrier Layers for PbTiO3 Thin Films Deposited on Si Substrates by Metal Organic Chemical Vapor Deposition

The interfaces between metal organic chemical vapor deposited PbTiO₃ thin films and various diffusion barrier layers deposited on Si substrates were investigated by transmission electron microscopy. Several diffusion barrier thin films such as polycrystalline TiO₂, amorphous TiO₂, ZrO₂, and TiN were deposited between the PbTiO₃ thin film and Si substrate, because the deposition of PbTiO₃ thin films on bare Si substrates produced Pb silicate layers at the interface irrespective of the deposition conditions. The TiO₂ films were converted to PbTiO₃ by their reaction with diffused Pb and O ions during PbTiO₃ deposition at a gubstrate temperature of 410°C. Further diffusion of Pb and O induces formation of a Pb silicate layer at the interface. ZrO₂ did not seem to react with Pb and O during PbTiO₃ deposition at the same temperature, but the Pb and O ions that diffused through the ZrO₂ layer formed a Pb silicate layer between the ZrO₂ and Si substrate. The TiN films did not seem to react with Pb and O ions during the deposition of PbTiO₃ at 410°C, but reacted with PbTiO₃ to form a lead-deficient pyrochlore during postdeposition rapid thermal annealing at 700°C. However, TiN could effectively block the diffusion of Pb and O ions into the Si substrate and the formation of Pb silicate at the interface.     

Synthesis of β-Si3N4 by Chemical Vapor Deposition

Beta-type CVD-Si₃N₄ plates (up to 1.1 mm thick) have been prepared by adding TiCl₄ vapor to the system SiCl₄-NH₃-H₂ at deposition temperatures of 1350° to 1450°C, while α-type or amorphous CVD-Si₃N₄ was obtained without TiCl₄ vapor at the same deposition temperature. Three to four wt % 777V was included in the β-type CVD-Si₃N₄ matrix. The density, preferred orientation, and lattice parameters of β-type CVD-Si₃N₄ were examined.     

Preparation of TiO2-Coated Al2O3 Particles by Chemical Vapor Deposition in a Rotary Reactor

A process of coating Al₂O₃ particles with TiO₂ by hydrolysis of Ti(OC₄H₉)₄ using chemical vapor deposition in a rotary reactor has been developed. The process resulted in (1) a coating film of TiO₂ which was compact and uniform with the fraction of TiO₂ being 0.1%–10.0% and (2) an amorphous TiO₂ coating at a low reaction temperature converted to anatase at a reaction temperature higher than 673 K.     

Synthesis of TiB2 by High-Dose Implantation of Boron Ions in Titanium Films

Boron ions were implanted at room temperature in Ti films at a high dose (7.1 × 10^I7 and 2.3 × 10¹⁸ ions/cm²), The formation of TiB₂ films was confirmed by X-ray diffraction. Boron concentration profiles in implanted films were studied by secondary-ion mass spectrometry.     

Thermal Behavior of BaTiO3 Particles Synthesized by Plasma Chemical Vapor Deposition

The thermal behavior of nanoparticles BaTiO₃, prepared by a radio-frequency plasma chemical vapor deposition (RF-plasma CVD) method, was characterized by various analysis methods. The BaCO₃ phase was included in the powder as byproducts, which is also observed in hydrothermal BaTiO₃ powder. The BaCO₃ phase decomposed and disappeared by annealing at 873 K for 30 min. H₂O, N₂, CO₂ and H₂, were detected by a thermal desorption spectra measurement from BaTiO₃ powder. The annealed powder became well-crystallized particles without grain growth, although as-prepared powder included polycrystalline particles. We successfully observed in-situ grain growth for BaTiO₃ nanoparticles by thermal transmission electron microscope. At the initial step of normal grain growth, very fine particles with 40–60 nm diameters started to merge into the larger grains around 1083 K. The migration rate was measured by video images and a grain boundary diffusion coefficient D_gb was calculated.     

Porous Photocatalytic TiO2 Thin Films by Aerosol Deposition

Porous photocatalytic TiO₂ thin films were fabricated by the leaching technique, followed by aerosol deposition. Mixed powders of TiO₂ and β-tricalcium phosphate (TCP) were aerosol deposited at room temperature for the initial fabrication of composite films. After the β-TCP phases were leached out from the composite films in a diluted HCl aqueous solution for 24 h, porous TiO₂ films remained on the substrate. To fabricate these porous films, the β-TCP content was varied from 10 to 45 wt% and submicrometer-sized pores were formed after leaching. The porous TiO₂ films showed strong initial photocatalytic activities due to the adsorption effect of the pores and the enlarged surface area.     

Formation of β-Si3N4 Coatings by Chemical Vapor Deposition

BetaSi₃N₄ coatings were obtained by chemical vapor deposition in a fused-silica reaction tube by outside heating of the system SiCl₄-NH₃-N₂ at a deposition temperature (reaction tube temperature) of 1300°C, whereas α- and α+β-phase coatings were obtained at depositon temperatures of 1150° and 1250°C, respecively. Formation of β-phase coatings at relatively low temperatures is explained in terms of the effect of a catalytic impurity, SiO vapor from the reaction tube. The X-ray diffraction patterns and sulface morphologies of the coatings were studied.     

Mechanical Properties of Hot-Pressed TiB2-ZrO2 Composites

The use of monoclinic ZrO₂ as an additive improves the mechanical properties of TiB₂-based composites without the use of stabilizers. In particular, TiB₂-30% ZrO₂ compacts exhibited a transverse rupture strength of 800 MN/m², few pores, and a K_{I c} of 5 MPa·m^1/2. The high strength and toughness are thought to result mainly from the presence of partially stabilized tetragonal ZrO₂ and from solid solution of (TiZr)B₂ formed in sintering.     

Chemical Vapor Deposition of B13C2 from BCl3-CH4-H2-Argon Mixtures

The deposition of boron carbide (B₁₃C₂) onto graphite substrates was accomplished by using a hot-wall chemical vapor deposition (CVD) reactor at a pressure of 10.1 kPa in the temperature range of 1000°–1400°C. A modified impinging-jet geometry was used to simplify the mass-transfer analysis. Coatings were characterized using X-ray diffractometry (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The surface morphology was composed of well-defined facets, the size of which was dependent on the growth rate and deposition time, as would be expected from a competitive growth mechanism. TEM micrographs of the coating showed long, columnar grains that emanated from a narrow nucleation zone. The growth rate could be adequately described by a first-order kinetic expression, with respect to the bulk gas phase boron chloride (BCl₃) concentration. The activation energy of the kinetic expression was estimated to be 93.1 kJ/mol. It was proposed that the deposition was limited by the adsorption of (BCl₃) onto the substrate surface.     

Metalorganic Chemical Vapor Deposition of Ferroelectric Pb(Zr,Ti)O3 Thin Films

Ferroelectric Pb(Zr_xT_1–x)O₃, films were successfully and reproducibly deposited by both hot–wall metalorganic chemical vapor deposition (MOCVD) and cold-wall MOCVD. One of the important problems associated with the MOCVD techniques is the selection of ideal precursors. After an intensive investigation for the most suitable precursors for MOCVD PZT films, the safe and stable precursors, namely lead tetramethylheptadione [Pb(thd)₂], zirconium tetramethylheptadione [Zr(thd)₄], and titanium ethoxide [Ti(OEt)₄], were chosen. The films were deposited at temperatures as low as 550°C and were single-phase perovskite in the as-deposited state. Also, the films were smooth, specular, crack-free, and uniform, and adhered well to the substrates. The stoichiometry of the films can be easily controlled by varying the individual precursor temperature and/or the flow rate of the carrier gas. Auger electron spectroscopic (AES) depth profile showed good compositional uniformity through the thickness of the films. The AES spectra also showed no carbon contamination in the bulk of the films. As-deposited films were dense and showed uniform and fine grains (≅0.1 μm).The optical properties of the films on the sapphire disks showed high refractive index ( n = 2.413) and low extinction coeflicient ( k = 0.0008) at a wavelength of 632.8 nm. The PZT (82/18) film annealed at 600°C showed a spontaneous polarization of 23.3 μC/cm² and a coercive field of 64.5 kV/cm.     

Dependence of Equilibria in the Modified Chemical Vapor Deposition Process on SiCl4, GeCl4, and O2

The high-temperature equilibrium concentration of the gaseous species and of the deposited glass formed by the oxidation of the chlorides of silicon and germanium was measured and compared with thermodynamic calculations. The equilibrium incorporation of germanium in phosphate-silicate particles formed from the gas at 1650 K is shown to form a theoretical basis from which the actual composition of completed preforms and optical fibers made by the modified chemical vapor deposition process can be calculated. The efficiency of incorporation of germanium dioxide in the silica glass system is determined as a function of the oxygen concentration and the ratio of germanium to silicon. The recently redeveloped element potential method is used to minimize the Gibbs energy of the system and obtain the temperature and compositional dependences. The agreement of calculated and experimental results obtained in this work suggests a broad spectrum of uses of the method for understanding and calculating chemical reactions. The method is exceptionally well suited for applications where the determination of species concentrations for multiphase processes is desired over broad ranges of concentrations, temperatures, and pressures.     

Preparation of CuAlO2 Films by Wet Chemical Synthesis

CuAlO₂ is a delafossite-type compound and is a known p -type semiconductor. Transparent CuAlO₂ thin films were prepared using a sol–gel technique. The films with an Al/Cu atomic ratio of 1.0 consisted of CuAlO₂, Cu₂O, and CuO after heat treatment at 800°–900°C in nitrogen gas. The electrical resistivity of the film heated at 800°C was 250 Ω·cm.