Recent progress of CERN RD50 Collaboration

The objective of the CERN RD50 Collaboration is to develop radiation hard semiconductor detectors for very high luminosity colliders, in particular, for the upgrade of the large hadron collider （LHC） which itself is scheduled to be operational in 2007. The approach of the RD50 has two major research lines, material engineering and device engineering. These are further subdivided into projects covering defect characterization and engineering, new detector materials, detector characterization, new detector structures and full detector systems. Presently, 264 members from 53 institutes are actively participating in the RD50 Collaboration. Detectors made of defect engineered substrates, e.g. high resistivity magnetic Czochralski （MCz-Si）, epitaxial silicon （Epi-Si） on Czochralski silicon （Cz-Si） substrate, intentionally thermal donor （TD） compensated p-type MCz-Si and oxygen enriched （DOFZ） silicon, have been demonstrated by the RD50 Collaboration. An overview and highlights of the results of these defect engineering techniques were given in this report.     

快速热处理法制备单晶硅太阳能电池

利用快速热处（Rapid Thermal Processing,RTP）技术,成功制备了单晶硅太阳电池。在三个重要的热处理环节（磷扩散制作P—N结、热氧化、电极烧结）采用了快速热处理法,电极制作采用了丝网印刷。初步研究,用大面积的单晶硅片制备出转换效率为11％、开路电压为564．6mV、短路电流密度为30．7mA／cm^2的太阳电池。     

Dielectric properties of doped silicon carbide powder by thermal diffusion

The doped SiC powders were prepared by the thermal diffusion process in nitrogen atmosphere at 2 000℃. Graphite film with holes was used as the protective mask, The dielectric properties of the prepared SiC powders at high frequencies were investigated. The complex permittivity of the undoped and doped SiC powders was measured within the microwave frequency range from 8.2 to 12.4 GHz. The XRD patterns show that before and after heat treatment no new phase appears in the samples of undoped and nitrogen-doped, however, in the aluminum-doped sample the AIN phase appears. At the same time the Raman spectra indicate that after doping the aluminum and nitrogen atoms affect the bond of silicon and carbon. The dielectric real part （ε） and imaginary part （ε＂） of the nitrogen-doped sample are higher than those of the other samples. The reason is that in the nitrogen-doped the N atom substitutes the C position of SiC crystal and induces more carriers and in the nitrogen and aluminum-doped the concentration of carriers and the effect of dielectric relaxation will decrease because of the aluminum and nitrogen contrary dopants.     

快速热氧化制备二氧化硅薄膜的红外研究

通过傅立叶红外吸收光谱分析了不同温度和时间下在硅衬底上快速热氧化(RTO)处理后的样品.结果表明,在处理相同的时间下,随着热处理温度的升高,二氧化硅薄膜的非对称伸展振动模式峰强度增强,其峰位发生了偏移.在800℃下制备二氧化硅薄膜的热氧化动力学规律不同于1200℃下的情况.在800℃下,快速热氧化制备的薄膜中含有非化学计量比的氧化硅(SiOx),SiOxDE再氧化使得薄膜的氧化生长速率不断增加,同时也是导致红外吸收光谱中ASM峰位向长波数方向偏移.在1200℃下,快速热氧化制备的薄膜成份是二氧化硅,这种薄膜具有良好的介电性能.     

微波烧结碳化硅的制备

以硅粉为硅源,乙炔炭黑为碳源,通过微波加热的方法制备碳化硅。研究反应物密实度和反应物粒度对产物碳化硅粒度和形貌的影响,利用SEM和TEM等手段观察碳化硅的形貌。结果表明:采用自由堆积的乙炔炭黑和硅粉为反应物时,硅粉、碳粉表面存在的氧与其发生反应生成的Si O和CO,再通过气-气反应生成Si C晶须,生成产物包括Si C颗粒和晶须。当反应物加压后,生成的Si O与Si和C反应生成Si C颗粒,产物中只包括Si C颗粒。乙炔炭黑和硅粉反应过程中Si C通过扩散机制生成,碳颗粒的粒度决定了生成的Si C的粒度。     

连续氮化硅纤维的氧化行为与高温影响研究

连续氮化硅陶瓷纤维是透波／承载一体化陶瓷基复合材料的关键原材料,也是制约复合材料耐高温性能与力学性能的关键因素。本文系统研究了国防科技大学研制的连续氮化硅纤维的抗氧化性能,分析了高温处理后纤维的组成结构与力学性能变化规律。结果表明：1000°C氧化1h后纤维强度高于原始纤维强度,主要是形成的玻璃相能减少和弥补纤维的表面缺陷。随着空气中处理温度提高,氧含量增加,纤维表面形成的SiO₂层逐渐变厚,纤维强度明显降低。纤维在1200°C氧化1h后强度保留率为63%,表明在此温度以下纤维有较好的服役性能。另一方面,氮化硅纤维在1450°C N₂中处理1h的强度保留率为57%,表现出良好的耐高温性能。纤维表面氧化对其在N₂下的耐高温性能具有不利影响,1000°C氧化的纤维在1450°C处理后丧失强度,1500℃处理后形成氮化硅结晶,失重明显增长,纤维内部也开始产生缺陷。     

Impact of thermal history of spherical silicon crystal on its crystal quality

Spherical Si solar cells were fabricated based on multicrystalline Si spheres produced by a dropping method. The thermal history of Si spheres were calculated by numerical simulation. The simulation result reveals that heat transferred by convection is greater than heat transferred by radiation. Considering the calculation results, Si spheres were dropped in the free-fall tower at low pressure state (0.2×105-0.5×105 Pa) to slow heat transfer by convection. After dash etching for 60 min, low pressure Si spheres have less etch pits, i.e., 80% for etch pit density and 8% for etch pit-area ratio compared to normal one. Furthermore, the conversion efficiency was improved from 6.57% (normal pressure spherical Si solar cell) to 9.56% (low one), which is 45% relative increase. The improvement is due to decrease of undercooling and increase of crystal growth duration. These results demonstrate that the dropping method at low pressure state is useful for fabricating high performance spherical Si solar cells.     

Recent progress of CERN 39-cryogenic tracking detectors collaboration

Significant progress was made by the CERN RD39 collaboration in the development of super radiation-hard cryogenic silicon detectors for applications in experiments at LHC, in particular after its future luminosity upgrade. The detailed modeling shows that the electric field in irradiated silicon detectors can easily be manipulated by the filling state of two deep defect levels at cryogenic temperature. Advanced radiation hard detectors using charge or current injection and the current injected detectors（CID） were developed by RD39. The results show that CID detectors can be operated at the temperature of 100-200 K with much improved charge collection efficiency（CCE） as compared with RT operation. Future studies are developing ultra-hard cryogenic silicon detectors for the LHC upgrade, where the radiation hardness is required up to 1016 neq/cm^2, at which trapping will limit the charge collection depth to the range of 20 to 50 μm regardless of the depletion depth. The key of our approach is to use freeze-out trapping to affect CCE.     

Effect of spray particle trajectory on the measurement signal of particle parameters based on thermal radiation

The influences of the dimensions of optical components and the trajectories of spray particles on the variations of the waveforms of the radiation signals from the spray particles were studied both theoretically and experimentally for correct simultaneous measurement of the particle parameters including particle velocity, surface temperature, size, and spatial distribution. Two types of filtering masks, including single-windowed and dual-windowed, were used as models in the current study. The evolution of the radiation pulse from a moving thermal spray particle was simulated through the change of the projected area of the particle image spot on the filtering mask window. The experimental detection of the thermal radiation pulses was performed for the high velocity oxygen fuel (HVOF) process using an optoelectronic measurement system. The theoretical simulation clearly showed that the characteristic waveforms of the thermal radiation signals from the spray particles are varied with the distance and orientation of the trajectories of thermal spray particles with respect to the ideal image plane of the filtering window plane. The typical variations of the characteristic waveforms obtained theoretically have been observed experimentally with HVOF spraying. The waveforms expected theoretically were correlated well with those observed experimentally. The characteristic waveforms of the radiation signals from the spray particles in a trapezoid shape with a saturated top platform contain the information for spray particle parameters including velocity, surface temperature, size, and spatial distribution. With the dual-windowed filtering mask, the particle velocity can be correctly measured with the bi-peak radiation signal in triangle-like shape, and the surface temperature may be estimated reasonably. However, the particle size cannot be estimated correctly. It was revealed that the characteristics of the waveforms were remarkably influenced by the image spot size. Therefore, the expansion of the image spot based on the relation between the image spot size of an in-flight particle and optical lens parameters obtained optically was discussed. The influence of the image spot size on the waveform characteristics was examined.     

冶金硅定向凝固法制备太阳能级多晶硅及其微观组织与位错(英文)

以冶金硅为原料,探索采用具有高温度梯度的真空定向凝固技术制备低成本太阳能级多晶硅,并研究其在不同生长条件下的微观组织特征、晶界与晶粒大小、固液界面形貌以及位错结构。结果表明,当凝固速率低于60μm/s时,能获得具有高密度和良好取向的定向凝固多晶硅棒状试样,硅晶粒大小随凝固速率的增大而减小;在控制凝固过程,获得平的固液界面形貌是获得沿凝固方向排列柱状晶的关键;由于硅的小平面生长特性,微观组织中出现了位错生长台阶和孪晶结构;在晶粒中,位错分布呈现不均匀性,并且位错密度随凝固速率的增加而增加;在此基础上,讨论了多晶硅的生长行为以及位错形成机制。     

拓扑法计算硅/碳化硅材料的电阻率

用拓扑关系将硅 /碳化硅材料转化为具有 3个不同显微结构单元的整体 ,建立了等效电路 ,结合相关试验 ,计算了不同显微组织的硅 /碳化硅材料的电阻率。得到的理论计算结果与实验值的综合相对误差仅为3.9% ,分析比较了各相含量和分布形态对硅 /碳化硅材料整体电阻率的影响。结果表明 ,提高低电阻率硅的体积含量和其分布连续性 ,可降低材料的整体电阻率。该方法可用来预测要得到所需电阻率材料中应具有的硅含量和分布形态 ,为确定制备材料的显微结构设计提供指导。     

半固态触变成形制备高硅铝基电子封装盒体的组织与性能

利用半固态触变成形工艺制备高硅铝电子封装盒体,分析盒体中Si相的分布特征.采用金相显微镜和扫描电镜观察盒体不同部位的显微组织,并测定其热物理性能及力学性能.结果表明,Al-25％Si(质量分数)合金在半固态触变成形中Si相和液相产生分离流动,液相从盒体中流出,Si相在盒体中聚集,其体积分数从盒体底面向四壁逐渐降低.盒体底面中心和四壁的热导率分别为107.6和131.5W/(m.K),热膨胀系数分别为7.9×10-6和10.6×10-6 K,抗弯强度由167MPa缓慢增加至180MPa.组织和性能呈现梯度变化.     

工业硅真空感应精炼过程数值模拟

用Multi-physics Comsol软件对工业硅真空感应精炼过程的温度场进行了二维数值模拟和分析,定量研究了精炼过程熔池中温度场动态分布特征.结果表明:精炼过程中熔池中存在不均匀的温度场,温度梯度随时间和空间位置发生变化,在保温阶段熔池底部和表面温差最大值为382 K.精炼过程中硅料熔化前后的温度分布明显不同,硅料熔化后电磁搅拌形成的热流场和熔池表面向外的热辐射对精炼过程熔池中温度分布产生了重要影响.     

Influence of rapid thermal process on intrinsic gettering in fast neutron irradiated Czochralski silicon

A rapid thermal process （RTP） was first introduced into the intrinsic gettering （IG） processes of fast neutron irradiated Czochralski （CZ） silicon. The effect of RTP conditions on bulk microdefects （BMDs） and denuded zone （DZ） was investigated. Fourier transform infrared absorption spectrometer （FTIR） was used to measure the concentration of interstitial oxygen （[Ot]）. Bulk microdefects were observed by optical microscope. The results show that, according to the variation of [Oil, it is found that RTP doesn＇t change the processes of oxygen precipitation in fast neutron irradiated Czochralski silicon. Perfect denuded zone, dense oxygen precipitates and defects form in the bulk of irradiated samples. With increasing temperature of RTP, the width of denuded zone decreases. Increasing RTP cooling rate, the density of Bulk microdefects increases. DZ forms in the sample that annealed in nitrogen atmosphere.     

The laws of silicon ingot formation by combustion reaction

The formation of a phase pure silicon ingot from SiO₂+Al+KClO₃ and Na₂SiO₃+Al+KClO₃ systems was investigated thermodynamically and experimentally under combustion mode, known also as self-propagating high-temperature synthesis (SHS). The regularities of combustion and phase formation versus KClO₃ concentration by a thermocouple technique were obtained. The morphology, chemical and phase composition of the silicon ingot were analyzed by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), and ICP-analysis. The method reported here proved effective in producing silicon ingots with a purity of 98%.     

Lanthanide salts as thermal conversion coatings on silicon carbide reinforced AA5A06 aluminium metal matrix composite

In this study, cerium and lanthanum chloride binary mixtures conversion coatings were investigated as corrosion inhibitors for silicon carbide particulates reinforced AA5A06 aluminium composite and AA5A06 aluminium alloy. Electrochemical impedance spectroscopy and potentiodynamic polarization tests revealed that cerium (III) chloride additions markedly improved the pitting corrosion resistance as compared to lanthanum (III) chloride additions, with maximum increase noted for samples treated with 750 ppm cerium (III) + 250 ppm lanthanum (III) chlorides. Scanning electron microscopy, energy dispersion spectroscopy and X‐ray photoelectron spectroscopy examinations revealed the existence of a heterogeneous layer formed by precipitation of cerium/lanthanum oxide/hydroxide on the cathodic intermetallics and an aluminium oxide film on the rest of the metal matrix. Improved corrosion resistance was attained for SiC particulates reinforced aluminium composite by means of the cerium/lanthanum conversion treatment, due to the presence of mainly cerium (IV) species as a result of oxidation of cerium (III), which provides auto‐protection properties.     

Effect of thermal shield and gas flow on thermal elastic stresses in 300 mm silicon crystal

The thermal elastic stresses induced in 300 mm Si crystal may be great troubles because it can incur the generation of dislocations and undesirable excessive residual stresses.A special thermal modeling tool, CrysVUn, was used for numerical analysis of thermal elastic stresses and stress distribution of 300 mm Si crystal under the consideration of different thermal shields and gas flow conditions.The adopted governing partial equations for stress calculation are Cauchy's first and second laws of motion.It is demonstrated that the presence and shape of thermal shield, the gas pressure and velocity can strongly affect von Mises stress distribution in Si crystal.With steep-wall shield, however, the maximal stress and ratio of high stress area are relatively low.With slope-wall shield or without shield, both maximal stress and ratio of high stress area are increased in evidence.Whether thermal shields are used or not, the increase of gas flow velocity could raise the stress level.In contrast, the increase of gas pressure cannot result in so significant effect.The influence of thermal shield and gas flow should be attributed to the modification of heat conduction and heat radiation by them.     

Characteristics of Si~ /B~ dual implanted silicon wafers

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Small-angle subgrain boundaries emanating from dislocation pile-ups in multicrystalline silicon studied with synchrotron white-beam X-ray topography

The formation of dislocation pile-ups and related small-angle subgrain boundaries in block-cast multicrystalline silicon for photovoltaic applications has been studied by means of white-beam X-ray topography (WB-XRT). For this purpose, samples sliced perpendicular and parallel to the growth direction have been investigated in reflection and transmission geometry, respectively. During the growth process of the silicon ingot, the dislocation density increases. WB-XRT measurements revealed the formation of small-angle subgrain boundaries. The subgrains have a slightly changed orientation related to a rotation of ～0.07–0.80° around an axis parallel to the growth direction. This tilt results from the high number of dislocations forming dislocation pile-ups and walls. The spacings between dislocations in such subgrain boundaries were found to be between 297 and 28 nm. A qualitative model for the formation of dislocation pile-ups is proposed.