Self-diffusion of V-48 in the FeV σ-phase and in an Fe-47 wt.% V solid solution

Self-diffusion coefficients of vanadium in the FeV -phase and in the corresponding -solid solution (Fe-47 wt.% V) measured in the temperature ranges 1002–1115 °C (-phase) and 1230–1320 °C are reported. The found results differ fundamentally and significantly from the relations in ordered and disordered solid solutions [9]. The diffusivity in -phase at the transition temperature (T _/=1200 °C) is cca 14 times lower than the diffusivity in the b.c.c. solid solution, the chemical composition of which is the same. The lowering is caused by the different values of frequency factors,D _O=0.11 cm²/s andD _O=45 cm²/s. The effect of the corresponding activation enthalpiesH =252 kJ/mole andH =293 kJ/mole is small and quite opposite. The occurence of higher activation enthalpyH in the -solid solution at temperaturesT>T _/ may be attributed to a certain amount of the f.c.c. phase coexisting in the b.c.c. matrix at concentrationsc _v>27 wt.% at sufficiently high temperatures [7]. A comparison of vanadium self-diffusion characteristics measured in the -phase to the extrapolated values obtained on the basis of the previous measurements [1] in the Fe-V primary solid solutions ₁ shows that the diffusivity ratioD ₁/D (1473 K)=33 and that the activation enthalpyH is by about 3% higher than the valuesH ₁ (eq. (5)) measured in the uniphase b.c.c. solid solutions.     

Photon-deuteron diffractive scattering

One expects a similarity of the energy dependence of the difference _tot(*p)– _tot(*n) for virtual (deep inelastic scatteringQ ²m ²) and real (Q ²=0) photons. Previous analysis of D structure functions with allowence for nuclear shadowing (NS) in the deuteron has led to conclusion that _tot(*p)– _tot(*n)<0>x<0.015. the=" early=" evidence=" from=" the=" real=" photoproduction=" data="> _tot(p)– _tot(n)<0. we=" critically=" reexamine=" determinations=" of=" the="> _tot(p)– _tot(n), using more accurate calculations of NS correction to _tot(D), and discuss a possibility of _tot(n) _tot(p) at moderately high energies.     

Annealing behavior ot trap-centers in silicon containing A-swirl defects

The annealing behavior of trap-centers was studied in float-zone silicon wafers containing A-swirl defects. Samples from areas of high and low A-swirl density were annealed in nitrogen ambient between 100° and 900 °C, and analysed using the Deep Level Transient Spectroscopy. The results indicate, that two levels atE _c }-0.07 eV, _n=4.6×10^–16 cm², andE _c–0.49eV, _n=6.6×10^–16cm² are caused by one defect, for which the silicon di-selfinterstitial is a likely interpretation. A level atE _c }-0.11 eV was assigned to interstitial carbon. Both defects annealed out at about 170 °C. After 600 °C annealing an additional level atE _c–0.2 eV was detected, which was attributed to an interstitial silicon carbon complex. Heat treatment at 800 °C generated a new level atE _c–0.49 eV, _n=2.9×10^–16cm² only in the area of high A-swirl defect density. This level was also observed after oxidation and subsequent annealing of silicon.     

Stress-relaxation determination of the parameters m and D in alkali halide crystals

Stress relaxation of the alkali halide crystals LiF, NaCl, and KCl has been studied from –196 °C to +150 °C. These relaxation curves are analyzed in terms of their relationship with the dislocation velocity v under the influence of an applied stress. Dislocation blocking is shown to play a decisive role in stress relaxation between –20 and +150 °C, and there is a satisfactory correspondence between the theoretical relaxation curves based on the v = v₀(/₀)^m dependence at the lower temperatures.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, Vol. 12, No. 5, pp. 76–84, May, 1969.The authors thank E. I. Raikhel's, L. M. Soifer, and I. V. Smushkov for graciously furnishing the crystals and for discussion of these results.     

Infinite hierarchy of exponents in a two-component random resistor network

We have studied the voltage distribution for a two-component random mixture of conductances _a and _b. A scaling theory is developed for the moments of the distribution, which predicts, for small values ofh=_a/_b, an infinite number of crossover exponents, one for each moment, for Euclidean dimensiond >2, and only one crossover exponent ford=2. Monte Carlo results on the square lattice confirm this prediction.     

An algebraic approach to quantum field theory and commutation relations for energy momentum in the framework of general relativity

We present a consistent set of commutation relations (C.R.) for a quantum system immersed in a classical gravitational field. The gravity field is described by metric tensorg _ik (x) andg ₀₀(x) with coordinate gaugeg _i0=0. The Hamiltonian of the system is found to be a linear function of [–g ₀₀(x)]^1/2. Its properties we define by C.R. avoiding explicit expression in terms of fields, as well as its splitting into free and interaction parts. In this way a consistent set of C.R., which are equally simple for a flat and curvilinear space, can be established. To stress the main idea of our approach, we consider the simple but still nontrivial example of a scalar electrodynamics immersed in a gravity field. The electromagnetic current operator we define by its C.R. and not explicitly. An interesting feature of this approach is that the Poisson equation follows from the consistency of the C.R. The C.R. for the energy and momentum operators of the system in a gravity field are established which generalize the usual Poincare group generators C.R. For example, we find (i/hc ²)[H _(x) ,H _(x) ]=P _– , whereH _(x) is the Hamiltonian of the system, which is a linear functional of (x)[–g ₀₀(x)]^1/2 andP _s(x) represents the momentum-density operator [averaged with the classical functions(x)].     

Interchangeability and bounds on the effective conductivity of the square lattice

The effective conductivity ^* of an infinitely interchangeable two-component random medium is considered. This class of media includes cell materials in the continuum and the bond lattice on ^d , where the cells or bonds are randomly assigned the conductivities ₁ and ₂ ( ₁, ₂ne0) with probabilitiesp ₁ andp ₂=1–p ₁. A rigorous basis for the very old and widely used low volume fraction expansion of ^* is established, by proving that ^* is an analytic function ofp ₂ in a suitable domain containing [0, 1]. In the case of the bond lattice ind=2, rigorous fourth-order upper and lower bounds on ^* valid for allp ₂, ₁, and ₂ are derived. The four perturbation coefficients entering into the bounds are obtained from the first-order volume fraction coefficient using the method of infinite interchangeability.     

ArF laser CVD of hydrogenated amorphous silicon: The role of buffer gases

ArF laser-induced CVD has been employed to generate hydrogenated amorphous silicon (a-Si:H) from Si₂H₆ gas dilute with He, Ar, or H₂. The formation of amorphous films or powder is found to depend critically on the kind of buffer gas, the stationary total and partial gas pressures, and the substrate temperature. These dependences have been investigated in the 1–5 Torr pressure and 100–400 °C temperature ranges. They are semiquantitatively discussed in terms of ArF laser photolysis of disilane, gas heating by heat flow from the substrate and laser irradiation, diffusion, and gas phase polymerization. Furthermore, photo ionization has been observed but found irrelevant for the a-Si:H layer properties. The photo and dark conductivities ( _ph, _d) of the semiconductor layers are determined by the substrate temperature. The _ph values range between 10^–7 and 10^{–4 –1} cm^–1 and the _d values between 10^–11 and 10^{–8 –1} cm^–1. The maximum ratio _ph/ _d amounts to 4×10⁴. The layers are further characterized by their optical band gap and activation energy. The layer properties are compared to literature values of amorphous films prepared by various photo, HOMO, and plasma CVD methods.     

Assessment of persistent-photoconductivity centers in MBE grown Al x Ga1-x as using capacitance spectroscopy measurements

Deep-level transient spectroscopy and thermally stimulated capacitance measurements were used to investigate the properties of deep traps in Si-dopedn-Al _x Ga_1–xAl layers grown by molecular beam epitaxy. Two electron traps at electron emission activation energies of 0.44 and 0.57 eV have been detected. Both traps were studied in detail and found to be the origin of the persistent-photo-conductivity phenomenon in this material. The nature of both traps is the same as of the DX center in liquid phase epitaxial material reported by Lang et al. The electron capture cross-sections are _n 1 = _n 2=8.3×10^–22cm² atT=205K. Activation energies ofE 1= 0.33eV andE 2=0.37eV at temperatures higher than 125 K were determined by DLTS measurements and by direct measurements of the capture transient. In order to allow for the variation of the free-electron concentration during the capture process, a new method for the evaluation of the electron capture crosssection was developed.     

“Magic Relation” Between the Structures of Coexisting Phases at a First-Order Phase Transition in a Hard Sphere System

In the statistical geometry of a hard sphere system of any number of dimensions, V _o and S _o, the so-called available space and the area of the interface between the available and unavailable space, respectively, can be used as surrogates for chemical potential and pressure. It is shown exactly that, if a first-order transition occurs, the relation dV _o/dS _o=–/2D, where is the diameter of a sphere and D is the dimensionality of the system, must hold for densities in the phase coexistence region. This relation is remarkable in that –/2D is the ratio of the volume to the surface area of a sphere. Also, it is shown that it is possible for the system to have two successive first-order transitions, but that the occurrence of a continuous transition (even in two dimensions) is unlikely. It is argued that this unlikelihood is substantially strengthened by the absence of temperature (except as a trivial factor) as a variable in hard-sphere systems. This suggests that the findings of the KTHNY theory, recent simulations, and colloid experiments (specialized to sticky hard disks) can be extended to true hard disks. The fundamental physics underlying the magic relation is yet to be exposed. The author continues to search for the underlying reason and hopes that the present paper will stimulate others to join the search.     

Temperature dependences of the flow and critical shear stresses of dispersion-hardening alloys

A study was made of the temperature dependences of the flow stress _0.1 (T) and of the critical shear stress _cr(T) of Cu-15% A1-(1–2)% Co, Cu-8% A1-(2–2.8)% Co, and Cu-4% A1–2% Co alloys containing noncoherent intermetallic particles. In the case of single crystals at temperatures 77–673° K there was a good agreement between the theoretically calculated values of the Orowan hardening and those found experimentally, so that the dependence _cr(T) was governed by the temperature dependence of the shear modulus G(T). For polycrystalline samples the usual dependence of the mechanical propertiesties on the grain size was not observed. At temperatures from 77 to 473–573°K the dependence _0.1 (T) was similar to the dependence G(T) and a good agreement was observed between the theoretically calculated dispersion hardening effects with those found experimentally. At temperatures T > 473–573°K the deformation was influenced greatly by grain-boundary glide, which enhanced the dependence _0.1 (T) compared with that expected theoretically.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 85–91, June, 1980.     

Extending Heisenberg's Measurement-Disturbance Relation to the Twin-Slit Case

Heisenberg's position-measurement-momentum-disturbance relation is derivable from the uncertainty relation (q)(p) h/2 only for the case when the particle is initially in a momentum eigenstate. Here I derive a new measurement-disturbance relation which applies when the particle is prepared in a twin-slit superposition and the measurement can determine at which slit the particle is present. The relation is d × p 2h/, where d is the slit separation and p = D_M(P_f, P_i) is the Monge distance between the initial P_i(p) and final P_f(p) momentum distributions.     

Formation of Ohmic contacts to n-GaAs using ion beam mixing of Tellurium

Ohmic contacts were formed on n-GaAs using thin evaporated layers of Te followed by bombardment of 100 keV Ar⁺ ions. The specific contact resistance _c showed a strong dependence on the ion dose in the range 10¹⁴ to 10¹⁶ ions cm^–2, with higher doses leading to progressively lower specific contact resistance. The substrate temperature during ion bombardment was varied in the range from 25 to 200° C and was found to have only a minor effect on the resultant values of _c. Elevated temperature aging of the Ohmic contacts at 200° C resulted in a progressive increase in the specific contact resistance, independent of either the ion dose or the substrate temperature used for ion beam mixing. Rutherford backscattering studies (RBS) indicate that the Ohmic contact behaviour was due to the in-diffusion of Te and subsequent formation of a heavily doped n ⁺ layer at the Te-GaAs interface.     

Resistance to dislocation motion in copper-based solid solutions with a statistically disordered atomic distribution

The stress _F due to friction forces in copper-based solid solutions was determined. Under the conditions of the procedure used to measure _F, on the basis of the half-wave hysteresis with polycrystalline samples, the value of d: _F = _F0 + K_Fd^–(1/2) where _F0 is the resistance to dislocation motion in an alloy having an infinite grain size, and K_F is a constant. It is shown that _F0 is governed by the interaction of moving dislocations with impurity atoms in the case of a statistically disordered atomic distribution. A study was made of the effects of various factors on _F and of the nature of the changes in _F0 caused by alloying.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No.3, pp. 18–23, March, 1971.     

Measurement of the2H(d, γ)4He reaction at intermediate excitation energies

The²H(d, )⁴He differential cross section was measured at deuteron laboratory energies of 20, 24, and 28 MeV between _cm=45° and _cm=135°. AtE _d =28 MeV a complete angular distribution was determined and fitted with Legendre polynomials. The ratioR=d/d (_cm=90°)/d/d (_cm=135°) was measured for each deuteron energy.     

On Observables

We propose a simple set-theoretic model of a generalized probability spaceadmitting intrinsic incompatible events and incompatible observables. It is acoproduct in the category D of D-posets and D-homomorphisms each factor ofwhich is a classical Kolmogorovian probability space. Since classical events,random functions, and probability measures can be treated within D in a canonicalway, the Kolmogorovian model becomes a special case. We show that -additivityand other -notions can be replaced in a natural way by sequential continuity.     

H2-induced changes in electrical conductance of β-Ga2O3 thin-film systems

H₂-induced changes of electrical conductivity in polycrystalline, undoped -Ga₂O₃ thin films in the temperature range of 400–650° C are described. The sheet conductance of these films depends reversibly, according to a power law p ^1/3, on the partial pressure of hydrogen in the ambient atmosphere of the Ga₂O₃ film. A bulk vacancy mechanism is excluded by experiments and it is shown that the interaction is based on a surface effect. Changes in conductance are discussed to result from the formation of an accumulation layer due to chemisorption on the grain surfaces. Typical coverages are determined to be approximately 10^–4 ML for pH₂=0.05 bar and T=600° C. A possible explanation of the p ^1/3 power law is provided.     

Interfaces in the Potts model II: Antonov's rule and rigidity of the order disorder interface

Within the ferromagneticq-state Potts model we discuss the wetting of the interface between two ordered phasesa andb by the disordered phasef at the transition temperature. In two or more dimensions and forq large we establish the validity of the Antonov's rule, _ab = _af + _fb , where denotes the surface tension between the considered phases. We also prove that at this temperature, in three or more dimensions the interface between any ordered phase and the disordered one is rigid.Laboratoire Propre du CNRS: LP 7061     

Magnetic moments of proton drip-line nuclei13O and9C

The magnetic moments of the proton drip-line nuclei¹³O(I = 3/2^–,T _1/2 = 8.6 ms) and 9C(I = 3/2^–,T _1/2 = 126 ms) have been determined for the first time through the combined techniques of polarized radioactive nuclear beams and-NMR detection. The observed magnetic moments are ¦(¹³O)¦ = 1.3891 ±0.0003 _N and ¦(⁹C)¦ = 1.3914 ±0.0005 _N. Spin expectation values are deduced to be 0.76 and 1.44 for¹³O and⁹C, respectively. While the of¹³O is consistent with the systematics from isospinT= 1/2 mirror pairs, the of⁹C is unusually large, even far larger than the single particle value, = 1.     

Topological and fractal properties of turbulent passive scalar fluctuations at small scales

Corrections of Batchelor's spectral law –1 of passive scalar-fluctuations are obtained by taking into account the topological instabilities of small-scale vortex sheets: –4/3 for supercritical and –5/4 for subcritical regimes. The corresponding fractal dimensions of the scalar interface areD =8/3 for supercritical andD =11/4 for subcritical regimes. Good agreement with experimental data is established.