短沟道CMOS／SIMOX器件及电路的辐照特性研究

利用薄膜全耗尽ＣＭＯＳ／ＳＯＩ工艺成功地研制了沟道长度为１．０μｍ的薄膜抗辐照ＳＩＭＯＸＭＯＳＦＥＴ、ＣＭＯＳ／ＳＩＭＯＸ反相器和环振电路，Ｎ和ＰＭＯＳＦＥＴ在辐照剂量分别为３ｘ１０５ｒａｄ（Ｓｉ）和７ｘ１０５ｒａｄ（Ｓｉ）时的阈值电压漂移均小于１Ｖ，１９级ＣＭＯＳ／ＳＩＭＯＸ环振经过５ｘ１０５ｒａｄ（Ｓｉ）剂量的电离辐照后仍能正常工作，其门延迟时间由辐照前的２３７ｐｓ变为３２８ｐｓ。     

全耗尽CMOS／SIMOX器件研制

在表层硅厚度为１８０ｕｍ的ＳＩＭＯＸ材料上，用局部增强氧化隔离等工艺研制了沟道长度为２．５μｍ的全耗尽ＣＭＯＳ／ＳＩＭＯＸ器件。该工艺对边缘漏电的抑制及全耗尽结构对背沟漏电的抑制降低了器件的整体漏电水平，使ＰＭＣＯＳ和ＮＭＯＳ的漏电分别达到３．Ｏ×１０－１１Ａ／μｍ和２．２×１０－１０Ａ／μｍ。５Ｖ时，例相器的平均延迟时间达６ｎｓ。     

短沟道CMOS／SOI器件加固技术研究

通过大量辐照实验分析了采用不同工艺和不同器件结构的薄膜短沟道ＣＭＯＳ／ＳＩＭＯＸ器件的抗辐照特性，重点分析了Ｈ２－Ｏ２合成氧化和低温干氧氧化形成的薄栅氧化层、ＣｏＳｉ２／多晶硅复合栅和多晶硅栅以及环形栅和条形栅对ＣＭＯＳ／ＳＩＭＯＸ器件辐照特性的影响，最后得到了薄膜短沟道ＣＭＯＳ／ＳＩＭＯＸ器件的抗核加固方案．     

0.15μm薄膜全耗尽MOS/SOI器件的设计和研制

利用自己开发的二维数值深亚微米ＳＯＩ器件模拟软件,较为详细地分析了沟道长度小于０．２μｍ的ＳＯＩ器件的阈值电压特性、穿通和击穿特性、亚阈值特性以及直流稳态特性等．通过这些模拟和分析计算,给出了沟道长度为０．１８、０．１５和０．１μｍ的薄膜全耗尽ＳＯＩ／ＭＯＳ器件的设计方案,并根据该设计方案成功地研制出了性能良好的沟道长度为０．１５μｍ的凹陷沟道ＳＯＩ器件．沟道长度为０．１５μｍ薄膜全耗尽凹陷沟道ＳＯＩ器件的亚阈值斜率为８７ｍＶ／ｄｅｃ,击穿电压为１．６Ｖ,阈值电压为０．４２Ｖ,电源电压为１．５Ｖ时的驱动电     

双多晶硅栅SOI MOS器件的研究

采用多晶硅栅全耗尽ＣＭＯＳ／ＳＩＭＯＸ工艺成功研制出多晶硅栅器件,其中Ｎ＋栅ＮＭＯＳ管的阈值电压为０．４５Ｖ,Ｐ＋栅ＰＭＯＳ管的阈值电压为－０．２２Ｖ,在１Ｖ和５Ｖ电源电压下多晶硅栅环振电路的单级门延迟时间分别为１．７ｎｓ和３５０ｐｓ,双多晶硅栅ＳＯＩ技术将是低压集成电路的一种较好选择。     

双固相外延技术及高性能1μmCMOS／SOS器件的研究

本文较为详细地介绍了能有效地改善ＳＯＳ材料结晶质量的双固相外延ＤＳＰＥ工艺，给出了优化的工艺条件．通过比较用ＤＳＰＥ及普通ＳＯＳ材料制作的ＣＭＯＳ／ＳＯＳ器件和电路的特性可以看出，采用ＤＳＰＥ工艺能显著改善ＳＯＳ材料的表面结晶质量，应用ＤＳＰＥ工艺在硅层厚度为３５０ｎｍ的ＳＯＳ材料上成功地研制出了沟道长度为１μｍ的高性能ＣＭＯＳ／ＳＯＳ器件和电路，其巾ＮＭＯＳＦＥＴ及ＰＭＯＳＦＥＴ的泄漏电流分别为２．５ｐＡ和１．５ｐＡ，１９级ＣＭＯＳ／ＳＯＳ环形振荡器的单级门延迟时间为３２０ｐｓ．     

短沟道MOSFET器件物理模型研究

通过求解经修正的二维泊松方程，并考虑了主要的短沟效应和高场效应，得到一个描述短沟道ＭＯＳＦＥＴ器件Ｉ－Ｖ特性的统一物理模型。该模型适用于包括亚阈区在内的不同工作区域，对０．８μｍ和１．４μｍ器件的漏极电流特性能较好地描述，可应用于亚微米、深亚微米级ＭＯＳＦＥＴ的电路模拟。     

1．5μm全耗尽CMOS／SIMOX门阵列的研制

本文介绍了可用于高速、高性能抗辐照专用集成电路设计的１．５μｍ薄膜全耗尽ＣＭＯＳ／ＳＩＭＯＸ门阵列母版的研制．较为详细地讨论了ＣＭＯＳ／ＳＩＭＯＸ门阵列基本阵列单元、输入／输出单元、单元库的设计技术以及１．５μｍＣＭＯＳ／ＳＩＭＯＸ门阵列工艺开发过程．该门阵列在５Ｖ电源电压时的单级门延迟时间仅为４３０ｐｓ．     

深亚微米薄膜CMOS／SOI电路的集成器件线路模拟

开发了适用于薄膜亚微米、深亚微米ＣＭＯＳ／ＳＯＩ电路的集成器件线路模拟软件，该模拟软件采用集成数值模型，将薄膜ＳＯＩ器件的数值模拟与电路模拟有机地结合在一起，实现了薄膜亚微米、深亚微米ＣＭＯＳ／ＳＯＩ电路的精确数值模拟，利用这一软件较为详细地分析了硅层厚度为５０￣４００ｎｍ、沟道长度为０．１５￣１．０ｕｍ的ＣＭＯＳ／ＳＯＩ环形振荡器电路，使我们对深亚微米薄膜ＣＭＯＳ／ＳＯＩ环振的特性及工作机理了较     

凹陷沟道SOI器件的实验研究

本文较为详细地描述了凹陷沟道ＳＯＩ器件的结构和工艺制造技术，采用凹陷沟道技术制备的ＳＯＩ器件的性能明显优于常规厚膜部分耗尽和常规薄膜全耗尽ＳＯＩ器件的性能．采用该技术已成功地研制出沟道区硅膜厚度为７０ｎｍ、源漏区硅膜厚度为１６０ｎｍ、有效沟道长度为０．１５～４．０μｍ的高性能凹陷沟道ＳＯＩＭＯＳＦＥＴ，它与常规薄膜全耗尽ＳＯＩＭＯＳＦＥＴ相比，跨导及饱和漏电流分别提高了约４０％．     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.