Onset coarsening/coalescence of cobalt oxides in the form of nanoplates versus equi-axed micron particles

The change of specific surface area and pore size distribution coupled with N₂ adsorption–desorption hysteresis isotherm, in particular that typical to cylindrical pores, were used to determine the onset coarsening/coalescence in the temperature range of 500–800 °C for Co(OH)₂ derived Co₃O₄ nanoplates and 700–1000 °C for CoO-derived Co₃O₄ powders (backtransformed to CoO above 900 °C) which are equi-axed in shape and microns in size. The vigorous onset coarsening/coalescence of the nanoplates and equi-axed micron particles was found to occur within minutes having apparent activation energy of 37 ± 7 kJ/mol (based on t_0.7, i.e. time for 70% surface area reduction) and 113 ± 8 kJ/mol (based on t_0.3), respectively. The surface area reduction process of the nanoplates was found to be controlled by (1 1 1)-specific coalescence besides a coarsening–repacking process more common to the equi-axed particles. The present static experimental results of coarsening–coalescence of the Co₃O₄ (below 900 °C) or CoO particles (above 900 °C) supports our previous supposition that CoO and Co₃O₄ nanocondensates could readily assemble as nanochain aggregates and further coalesce into a close packed manner below 1000 °C by the radiant heating effect in a dynamic laser ablation process.     

Fully solution-processed metal oxide thin-film transistors via a low-temperature aqueous route

We report a facile and low-temperature aqueous route for the fabrication of various oxide thin films (Al₂O₃, In₂O₃ and InZnO). A detail study is carried out to reveal the formation and properties of these sol-gel-derived thin films. The results show that the water-based oxide thin films undergo the decomposition of nitrate group as well as conversion of metal hydroxides to form metal oxide framework. High quality oxide thin film could be achieved at low temperature by this aqueous route. Furthermore, these oxide thin films are integrated to form thin-film transistors (TFTs) and the electrical performance is systematically studied. In particular, we successfully demonstrate In₂O₃/Al₂O₃ TFTs with high mobility of 30.88 cm² V⁻¹ s⁻¹ and low operation voltage of 4 V at a maximum processing temperature of 250 °C.     

Mesoporous In2O3 materials prepared by solid-state thermolysis of indium-organic frameworks and their high HCHO-sensing performance

Mesoporous In₂O₃ materials were synthesized by calcining indium-organic frameworks (InOFs, CPM-5 and MIL-68), which were further successfully utilized to detect toxic HCHO vapor. By taking the intrinsic structural features of two InOF precursors into account, the surface areas of produced indium oxides were well investigated via controlling the calcination temperature. The influence of surface area on the gas sensing performance was studied in detail. Porous In₂O₃ prepared by heat treatment at 650 °C showed the highest responses to 50 ppm HCHO (Rg/Ra = 31.8 and 38.0, respectively; Rg, resistance in gas; Ra, resistance in air) at 210 °C, which surpass the values of all the reported In₂O₃ materials to date under the similar conditions. The promising HCHO-sensing properties enable these InOF-templated mesoporous In₂O₃ materials to be competitive candidates for detecting poisonous formaldehyde in practice.     

Kinetics of calcium sulfoaluminate formation from tricalcium aluminate,calcium sulfate and calcium oxide

The formation kinetics of tricalcium aluminate (C₃A) and calcium sulfate yielding calcium sulfoaluminate (C₄A₃$) and the decomposition kinetics of calcium sulfoaluminate were investigated by sintering a mixture of synthetic C₃A and gypsum. The quantitative analysis of the phase composition was performed by X-ray powder diffraction analysis using the Rietveld method. The results showed that the formation reaction 3Ca₃Al₂O₆ + CaSO₄ → Ca₄Al₆O₁₂(SO₄) + 6CaO was the primary reaction < 1350 °C with and activation energy of 231 ± 42 kJ/mol; while the decomposition reaction 2Ca₄Al₆O₁₂(SO₄) + 10CaO → 6Ca₃Al₂O₆ + 2SO₂ ↑ + O₂ ↑ primarily occurred beyond 1350 °C with an activation energy of 792 ± 64 kJ/mol. The optimal formation region for C₄A₃$ was from 1150 °C to 1350 °C and from 6 h to 1 h, which could provide useful information on the formation of C₄A₃$ containing clinkers. The Jander diffusion model was feasible for the formation and decomposition of calcium sulfoaluminate. Ca^2 + and SO₄^2 − were the diffusive species in both the formation and decomposition reactions.     

Phase transition and negative thermal expansion properties in isovalently substituted In2−xScx(MoO4)3 ceramics

Sc-substituted In_2−xSc_x(MoO₄)₃ (0 ≤ x ≤ 2) ceramics were successfully synthesized by the solid state reaction method with the goal of tuning the phase transition temperature. Effects of Sc³⁺ substitution on the phase composition, microstructure, phase transition temperature and thermal expansion behavior of the In_2−xSc_x(MoO₄)₃ (0 ≤ x ≤ 2) ceramics were investigated using XRD, FESEM, EDX, XPS and TMA, respectively. The results indicate that all samples are single phase. The relative densities of the In_2−xSc_x(MoO₄)₃ ceramics increased gradually with increasing Sc³⁺ content. Investigations on thermal expansion properties of the In_2−xSc_x(MoO₄)₃ ceramics reveal that the temperature-induced phase transition from monoclinic to orthorhombic symmetry is strongly correlated to the Sc³⁺ content. The obtained In₂(MoO₄)₃ ceramics undergoes a structural phase transition from monoclinic to orthorhombic around 355.3 °C. The phase transition temperature can be significantly shifted from 355.3 °C (x = 0) to 31.9 °C (x = 1.5) by partially replacing In³⁺ cations with less electronegative Sc³⁺ cations. All In_2−xSc_x(MoO₄)₃ (0 ≤ x ≤ 2) ceramics exhibit strong negative thermal expansion above the phase transition temperature. In_0.5Sc_1.5(MoO₄)₃ exhibits linear NTE over the 100–700 °C temperature range with a linear coefficient of thermal expansion of −3.99 × 10⁻⁶ °C ⁻¹.     

Dielectric and thermal properties of AlN ceramics

The effects of slow-cooling and annealing conditions on dielectric loss, thermal conductivity and microstructure of AlN ceramics were investigated. Y₂O₃ from 0.5 to 1.25 mol% at 0.25% increments was added as a sintering additive to AlN powder and pressureless sintering was carried out at 1900 °C for 2 h in a nitrogen flowing atmosphere. To improve the properties, AlN samples were slow-cooled at a rate of 1 °C min⁻¹ from 1900 to 1750 °C, subsequently cooled to 970 °C at a rate of 10 °C min⁻¹ and then annealed at the same temperature for 4 h. AlN and YAG (5Al₂O₃/3Y₂O₃) were the only identified phases from XRD. AlN doped with 0.5 and 0.75 mol% Y₂O₃ had a low loss of <2.0 × 10⁻³ and a high thermal conductivity of >160 W m⁻¹ °C⁻¹.     

Phase formation,microstructure development and thermoelectric properties of (ZnO)kIn2O3 ceramics

The (ZnO)_kIn₂O₃ system is interesting for applications in the fields of thermoelectrics and opto-electronics. In this study we resolve the complex homologous phase evolution with increasing temperature in polycrystalline ceramics for k = 5, 11 and 18 and its influence on the microstructural development and thermoelectric properties. The phase formation at temperatures above 1000 °C is influenced by the local ZnO-to-In₂O₃ ratio in the starting-powder mixture. While the Zn₅In₂O₈ equilibrium phase for k = 5 is formed directly after sintering at 1200 °C, the formation of the k = 11 and k = 18 equilibrium phases proceeds at higher temperatures by diffusion between the initially formed phases, the lower k Zn₅In₂O₈/Zn₇In₂O₁₀ and the higher k Zn_kIn₂O_k+3 (9 < k < ∞). Such phase formation affects the sintering and grain growth, and consequently, with the degree of structural and compositional homogeneity, also the thermoelectric characteristics of the (ZnO)_kIn₂O₃ ceramics.     

Structure and dielectric properties of perovskite ceramics in the system Ba(Ni1/3Nb2/3)O3–Ba(Zn1/3Nb2/3)O3

Ceramics in the system Ba(Ni_1/3Nb_2/3)O₃–Ba(Zn_1/3Nb_2/3)O₃ (BNN–BZN) were prepared by the mixed oxide route. Powders were mixed and milled, calcined at 1100–1200 °C then pressed and sintered at temperatures in the range 1400–1500 °C for 4 h. Selected samples were annealed or slowly cooled after sintering. Most products were in excess of 96% theoretical density. X-ray diffraction confirmed that all specimens were ordered to some degree and could be indexed to hexagonal geometry. Microstructural analysis confirmed the presence of phases related to Ba₅Nb₄O₁₅ and Ba₈Zn₁Nb₆O₂₄ at the surfaces of the samples. The end members BNN and BZN exhibited good dielectric properties with quality factor (Qf) values in excess of 25,000 and 50,000 GHz, respectively, after rapid cooling at 240 °C h⁻¹. In contrast, mid-range compositions had poor Qf values, less than 10,000 GHz. However, after sintering at 1450 °C for 4 h and annealing at 1300 °C for 72 h, specimens of 0.35(Ba(Ni_1/3Nb_2/3)O₃)–0.65(Ba(Zn_1/3Nb_2/3)O₃) exhibit good dielectric properties: τ_f of +0.6 ppm °C⁻¹, relative permittivity of 35 and quality factor in excess of 25,000 GHz. The improvement in properties after annealing is primarily due to an increase in homogeneity.     

Effects of element chemical states and grain orientation growth of ITO targets on photoelectric properties of the film

A study was carried out to compare element chemical states and grain orientation growth between two ITO targets, which were respectively sintered at 1560 °C (target A#) and 1600 °C (target B#). The lower sintering temperature can be beneficial to increase mass content ratio of In₂O₃ to SnO₂, reduce the production of Sn²⁺ ions and the component of O-In as well as increase oxygen holes, and can also promote grain orientation growth of In₂O₃ and In₄Sn₃O₁₂ phase. Three groups of ITO films were deposited at 230 °C using these targets to investigate the effects of sputtering parameters on the photoelectric properties of ITO films. Under different sputtering pressures, the sheet resistance for target A# has higher sensitivity to low O₂ flow, while target B# displays higher sensitivity to high O₂ flow. In the case of sputtering pressure of 0.5 Pa, ITO films for target A# displays the highest visible transmittance. In addition, annealing process could decrease the sheet resistance and improve the transmittance of ITO films because of its effect on the crystallinity and surface morphology of ITO films.     

Phase-transformation and grain-growth kinetics in yttria-stabilized tetragonal zirconia polycrystal doped with a small amount of alumina

Microstructure development during sintering in 3 mol% Y₂O₃-stabilized tetragonal zirconia polycrystal doped with a small amount of Al₂O₃ was investigated in the isothermal sintering conditions of 1300–1500 °C. At the low sintering temperature at 1300 °C, although the density was relatively high, the grain-growth rate was much slow. In the specimen sintered at 1300 °C for 50 h, Y³⁺ and Al³⁺ ions segregated along grain boundaries within the widths of about 10 and 6 nm, respectively. In grain interiors, the cubic-phase regions were formed by not only a grain-boundary segregation-induced phase-transformation mechanism but also by spinodal decomposition. The grain-growth behavior was kinetically analyzed using the grain-size data in 1300–1500 °C, which indicated that the grain-growth rate was enhanced by Al₂O₃-doping. These phase-transformation and grain-growth behaviors are reasonably explained by the diffusion-enhanced effect of Al₂O₃-doping.     

Effect of NiS addition on nitridation of alumina to aluminum nitride using polymeric carbon nitride as a nitridation reagent

We investigated the effect of adding nickel(II) sulfide (NiS) on nitridation of alumina (Al₂O₃) to aluminum nitride (AlN) using polymeric carbon nitride (PCN), which was synthesized by polymerization of dicyandiamide at 500 °C. The product powders obtained from nitridation of a mixture of δ-Al₂O₃ and NiS powders (mole ratio of 1:0.01) at various reaction temperatures were characterized by powder X-ray diffraction, ²⁷Al magic-angle spinning nuclear magnetic resonance, and Raman spectroscopy. δ-Al₂O₃ began to convert to AlN at 900 °C and completely converted to AlN at 1300 °C. The as-synthesized sample powders contained nitrogen-doped carbon microtubes (N-doped CMTs) with a length of several tens of mm and thickness of ca. 3 µm. The addition of NiS to δ-Al₂O₃ resulted in the enhancement of the amount of N-doped CMTs and nitridation rate, which might be due to the catalytic action of Ni particles on the thermal decomposition of vaporized PCN. The change in Raman spectra with reaction temperatures indicated that the crystallinity of N-doped CMTs was increased by calcining at higher reaction temperatures.     

A comparative study of the magnetic and microwave properties of Al3+ and In3+ substituted Mg–Mn ferrites

The effect of substitution of diamagnetic Al³⁺ and In³⁺ ions for partial Fe³⁺ ions in a spinel lattice on the magnetic and microwave properties of magnesium–manganese (Mg–Mn) ferrites has been studied. Three kinds of Mg–Mn based ferrites with compositions of Mg_0.9Mn_0.1Fe₂O₄, Mg_0.9Mn_0.1Al_0.1Fe_1.9O₄, and Mg_0.9Mn_0.1In_0.1Fe_1.9O₄ were prepared by the solid-state reaction route. Each mixture of high-purity starting materials (oxide powders) in stoichiometric amounts was calcined at 1100 °C for 4 h, and the debinded green compacts were sintered at 1350 °C for 4 h. XRD examination confirmed that the sintered ferrite samples had a single-phase cubic spinel structure. The incorporation of Al³⁺ or In³⁺ ions in place of Fe³⁺ ions in Mg–Mn ferrites increased the average particle size, decreased the Curie temperature, and resulted in a broader resonance linewidth as compared to un-substituted Mg–Mn ferrites in the X-band. In this study, the In³⁺ substituted Mg–Mn ferrites exhibited the highest saturation magnetization of 35.7 emu/g, the lowest coercivity of 4.1 Oe, and the highest Q×f value of 1050 GHz at a frequency of 6.5 GHz.     

Formation of porous aggregations composed of Al2O3 platelets using potassium sulfate flux

Porous aggregations, with about 10 μm diameter, composed of Al₂O₃ platelet crystals were formed by heating a powder mixture consisting of Al₂(SO₄)₃+2K₂SO₄ (mol ratio) in an alumina crucible at temperatures 1000–1300°C for 3 h and removing the flux component with hot hydrochloric acid after heating. The specific surface area of the aggregations obtained by heating at 1000°C for 3 h was maximum and its value was 5·2 m² g⁻¹. Since the size of Al₂O₃ platelets increased and the number of Al₂O₃ platelets decreased, the specific surface area decreased to 0·7 m² g⁻¹ at 1100°C. When heated at 1300°C, the size of the Al₂O₃ platelets increased with increasing amount of K₂SO₄ in the starting powder mixture. ©     

Signature of multiferroicity and pyroelectricity close to room temperature in BaFe12O19 hexaferrite

In this paper, we have reported the signature of multiferroicity and pyroelectricity in BaFe₁₂O₁₉ hexaferrite close to room temperature. The BaFe₁₂O₁₉ hexaferrite samples are synthesized by co-precipitation method at different sintering temperature ranging from 800 to 1200 °C and study their structural, ferroelectric, magnetic, magnetoelectric and pyroelectric properties. X-ray Diffraction patterns show the pure phase formation for all samples. Morphological changes are examined through the scanning electron microscope. The maximum ferroelectric polarization (0.66 μC/cm²) is observed for the sample sintered at 1200 °C, however maximum magnetic polarization 74 emu/g is observed for sample sintered at 1000 °C. Magneto-electric coupling measurements are also performed through dynamic method and average magneto-electric coupling coefficient (~ 7.05 × 10⁻⁷ mV/cm Oe²) is observed at room temperature for the sample sintered at 1200 °C. Furthermore, maximum pyroelectric constant (147 × 10⁻¹³C/cm² °C) is observed at 75 °C for BaFe₁₂O₁₉ samples sintered at 1200 °C. The observation of both multiferroicity and pyroelectricity close to room temperature in BaFe₁₂O₁₉ hexaferrite is interesting and useful for multifunctional devices.     

Tribological behavior of Ti3SiC2 and Ti3SiC2/Pb composites sliding against Ni-based alloys at elevated temperatures

The Ti₃SiC₂ and Ti₃SiC₂/Pb composites were tested under dry sliding conditions against Ni-based alloys (Inconel 718) at elevated temperatures up to 800 °C using a pin-on-disk tribometer. Detailed tribo-chemical changes of Pb on sliding surface were discussed. It was found that the tribological behavior were insensitive to the temperature from 25 °C (RT) to 600 °C (friction coefficient ≈0.61–0.72, wear rate ≈10⁻³ mm³ N m⁻¹). An amount of Pb in the composites played a key role in lubricating with the temperature below 800 °C. The friction coefficient (≈0.22) and wear rate (≈10⁻⁷ mm³ N m⁻¹) at elevated temperatures were both decreased by the added PbO. The wear mechanisms of Ti₃SiC₂/Pb-Inconel 718 tribo-pair at elevated temperatures were believed to be the combined effect of abrasive wear and tribo-oxidation wear. During the sliding, two oxidization reactions proceed, 2Pb+O₂=2PbO (below 600 °C) and 6PbO+O₂=2Pb₃O₄ (800 °C). The friction coefficient and wear rate of the composites were reduced due to the self-lubricating effect of the tribo-oxidation products.     

The effect of sintering temperature and time on microwave properties of Sm(Zn1/2Ti1/2)O3 ceramics for resonators

The microwave dielectric properties of Sm(Zn_1/2Ti_1/2)O₃ ceramics have been investigated. Sm(Zn_1/2Ti_1/2)O₃ ceramics were prepared by conventional solid-state route with various sintering temperatures and times. The prepared Sm(Zn_1/2Ti_1/2)O₃ exhibited a mixture of Zn and Ti showing 1:1 order in the B-site. Higher sintered density of 7.01 g/cm³ can be produced at 1310 °C for 2 h. The dielectric constant values (ɛ_r) of 22–31 and the Q × f values of 4700–37,000 (at 8 GHz) can be obtained when the sintering temperatures are in the range of 1250–1370 °C for 2 h. The temperature coefficient of resonant frequency τ_f was a function of sintering temperature. The ɛ_r value of 31, Q  ×  f value of 37,000 (at 8 GHz) and τ_f value of −19 ppm/°C were obtained for Sm(Zn_1/2Ti_1/2)O₃ ceramics sintered at 1310 °C for 2 h. For applications of high selective microwave ceramic resonator, filter and antenna, Sm(Zn_1/2Ti_1/2)O₃ is proposed as a suitable material candidate.     

High temperature dielectrics in the ceramic system K0.5Bi0.5TiO3-Ba(Zr0.2Ti0.8)O3-Bi(Zn2/3Nb1/3)O3

Ceramics in the system (1-x)[0.5K_0.5Bi_0.5TiO₃-0.5Ba(Zr_0.2Ti_0.8)O₃]-xBi(Zn_2/3Nb_1/3)O₃ have been fabricated by a solid-state processing route for compositions x≤0.3. The materials are relaxor dielectrics. The temperature of maximum relative permittivity, T_m, decreased from 150 °C for composition x=0, to 70 °C for x=0.2. The x=0.2 sample displayed a wide temperature range of stable relative permittivity, ε_r, such that ε_r=805±15% from −20 to 600 °C (1 kHz). Dielectric loss tangent was ≤0.02 from 50 °C to 450 °C (1 kHz), but due to the tanδ dispersion peak, the value increased to 0.09 as temperatures fell from 50 °C to −20 °C. Values of dc resistivity were of the order of ~10⁹ Ω m at 300 °C. These properties are promising in the context of developing new high temperature capacitor materials.     

High-energy storage performance in lead-free (1-x)BaTiO3-xBi(Zn0.5Ti0.5)O3 relaxor ceramics for temperature stability applications

In this paper, we prepared lead-free (1-x)BaTiO₃-xBi(Zn_0.5Ti_0.5)O₃ (x=0.04, 0.08, 0.10, and 0.14) ceramics by a conventional solid-state reaction technique. Pure perovskite structures and dense microstructures were demonstrated for all the compositions. Interestingly, it was found that the sintering temperature tended to decrease with increasing the Bi(Zn_0.5Ti_0.5)O₃ content. It should be stressed that a low sintering temperature of 1050 °C was utilized for the composition of x=0.14. Moreover, the dielectric permittivity-temperature curve became more flat and the relaxor degree became stronger with the augment in Bi(Zn_0.5Ti_0.5)O₃ content. We also conducted a detailed study on the energy storage performance for all the compositions from 25 °C to 180 °C.We found that relatively temperature-stable energy storage performance could be obtained in the compositions with x=0.08, 0.10 and 0.14 regardless of the evolution of dielectric constant during the test temperature range. In particular, due to a higher field of 12 MV m⁻¹, the discharge energy storage densities of x=0.14 could reach 0.81 J cm⁻³, 0.80 J cm⁻³, 0.78 J cm⁻³, 0.72 J cm⁻³, and 0.67 J cm⁻³ with high efficiencies of 94%, 92%, 94%, 88% and 77% at 25 °C, 50 °C, 100 °C, 150 °C, and 180 °C, respectively. All these results demonstrate the (1-x)BaTiO₃-xBi(Zn_0.5Ti_0.5)O₃ ceramics are quite promising for temperature-stable energy storage applications.     

Semiconducting properties of cold sintered V2O5 ceramics and Co-sintered V2O5-PEDOT:PSS composites

Recently we established a sintering approach, namely Cold Sintering Process (CSP), to densify ceramics and ceramic-polymer composites at extraordinarily low temperatures. In this work, the microstructures and semiconducting properties of V₂O₅ ceramic and (1-x)V₂O₅-xPEDOT:PSS composites cold sintered at 120 °C were investigated. The electrical conductivity (25 °C), activation energy (25 °C), and Seebeck coefficient (50 °C) of V₂O₅ are 4.8 × 10⁻⁴ S/cm, 0.25 eV, and −990 μV/K, respectively. The conduction mechanism was studied using a hopping model. A reversible metal-insulator transition (MIT) was observed with V₂O₅ samples exposed to a N₂ atmosphere, whereas in a vacuum atmosphere, no obvious MIT could be detected. With the addition of 1–2 Vol% PEDOT:PSS, the electrical conductivity (50 °C) dramatically increases from 10⁻⁴ to 10⁻³ ∼ 10⁻² S/cm, and the Seebeck coefficient (50 °C) shifts from −990 to −(600 ∼ 250) μV/K. All the results indicate that CSP may offer a new processing route for the semiconductor electroceramic development without a compromise to the all-important electrical properties.     

Catalytic decomposition of biomass tars with iron oxide catalysts

Catalytic gasification of wood (Cedar) biomass was carried out using a specially designed flow-type double beds micro reactor in a two step process: temperature programmed non-catalytic steam gasification of biomass was performed in the first (top) bed at 200–850 °C followed by catalytic decomposition gasification of volatile matters (including tars) in the second (bottom) bed at a constant temperature, mainly 600 °C. Iron oxide catalysts, which transformed to Fe₃O₄ after use possessed catalytic activity in biomass tar decomposition. Above 90% of the volatile matters was gasified by the use of iron oxide catalyst (prepared from FeCl₃ and NH_3aq) at SV of 4.5 × 10³ h^?1. Tar was decomposed over the iron oxide catalysts followed by water gas shift reaction. Surface area of the iron oxide seemed to be an important factor for the catalytic tar decomposition. The activity of the iron oxide catalysts for tar decomposition seemed stable with cyclic use but the activity of the catalysts for the water gas shift reaction decreased with repeated use.