二极溅射沉积Fe-N-O薄膜的形貌与结构分析

利用二极溅射的方法在不同衬底上沉积了Fe N O薄膜。通过扫描电子显微镜(SEM)、光电子能谱(XPS)和透射电子显微镜(TEM)等先进实验分析手段对二极溅射沉积Fe N O薄膜的形貌与结构进行了分析。XPS和TEM的结果表明,薄膜的主要成分为FeO和少量的Fe16N2多晶体组成,生长上存在择优取向;表面均匀、致密、平整,晶粒大小在50nm左右。     

热处理时间对NiFe薄膜性能的影响

用磁控溅射法制备了厚度２０－２００ｎｍ的ＮｉＦｅ合金薄膜。研究了热处理时间（及温度）对ＮｉＦｅ薄膜的电阻（电阻率）、各向异性磁电阻比和软磁性能的影响。在一定温度下，经适当时间的热处理可以减小ＮｉＦｅ薄膜的电阻、增大其各和中异性磁电阻比，从而制备出性能较好（各向异性磁电阻比较大、温度稳定性较好）的薄膜磁性材料。     

氧化银薄膜的微结构对其反射率和透射率的影响

保持150℃的衬底温度不变,通过调节氧氩比(OFR=[O2]/[Ar]),利用直流反应磁控溅射技术在玻璃衬底上制备了一系列氧化银薄膜。利用X射线衍射谱、扫描电子显微镜和分光光度计重点研究了薄膜的微结构对其反射率和透射率的影响。研究表明随着OFR的升高,氧化银薄膜呈现了从Ag+Ag2O多晶结构到Ag2O多晶结构的演变。薄膜的表面相应地呈现了从疏松的多孔结构到类金字塔结构的演变。较高的Ag2O含量和致密的表面形貌有利于薄膜可见和红外区的透光性,而较高的银含量和疏松的多孔结构则造成对光的强烈吸收,急剧地降低了薄膜的透射率和反射率。特别是在OFR为0.5条件下成功制备了具有(111)择优取向的Ag2O多晶薄膜,有效地将氧化银热分解的临界温度降低到200℃左右。     

沉积温度对ZrO2薄膜相结构和透射率的影响

利用射频反应磁控溅射在显微玻璃、单晶硅片、NaCl片和石英上沉积ZrO2薄膜.薄膜厚度80 nm～100 nm.利用X射线衍射仪、透射电子显微镜、X射线能谱仪、分光光度计和原子力显微镜研究了沉积温度对薄膜相结构和O/Zr、透射率的影响.研究发现,沉积温度升高,非晶相减少,结晶相增多;晶粒尺寸增大;沉积温度为370 ℃,透射率明显下降.     

热处理对V2O5-TiO2复合薄膜表面结构与光学性能的影响

以钛酸丁脂、V2O5粉末为前驱体,采用溶胶-凝胶法制备了V2O5-TiO2复合薄膜,并采用X射线光电子能谱(XPS)和Uv-vis-nir分光光度计等方法研究了热处理对薄膜性能的影响.结果表明,随热处理温度的升高,复合薄膜中钛离子的价态不变,仍为Ti4 ;而V4 离子逐渐被氧化为V5 离子;并采用氢氧基团、碳氧键与多种钒离子进行叠加拟合,拟合结果与实验曲线非常符合;V2O5-TiO2复合薄膜在紫外光波段的透射率减小,吸收带边出现红移.     

离子注入对CuxS薄膜的影响

讨论了ＣｕｘＳ薄膜经氮离子注入后对薄膜的特性影响，铜硫化合物薄膜是经两次蒸发制备在玻璃上。实验发现氮离子束注入引起了ＣｕｘＳ薄膜中的铜与硫成分的改变，明显观察到样品中的铜对硫化的值随注入了子束强度的增加而变大。经过透射光谱的分析对比证实了确有新的ＣｕｘＳ状态出现。     

低温热处理对氧化石墨烯薄膜的影响

采用Hummers法合成氧化石墨并在水中超声分散获得氧化石墨烯水溶胶,通过真空辅助自组装法使氧化石墨烯片定向流动组装制得氧化石墨烯薄膜.进一步对氧化石墨烯薄膜进行真空低温热处理,并以傅市叶变换红外光谱仪、X射线衍射仪、拉曼光谱仪、扫描电子显微镜、透射电子显微镜等进行表征分析.结果表明:低温热处理使氧化石墨烯薄膜具有导电...     

二氧化锡薄膜的电阻气敏和光透射率气敏性能

以无机盐为原料,采用新颖的溶胶－凝胶工艺制备了具有优良电阻－气敏性能的纳米晶二氧化锡薄膜,其在最佳工作温度２００℃对６００ｐｐｍＣＯ的灵敏度可达５００,响应时间和恢复时间分别为１３ｓ和２０ｓ,进一步研究了薄膜的光透射率－气敏性能,发现当通ＣＯ时,透射率下降,最佳工作温度与电阻－气敏性能一致,当提高薄膜的退火温度时,电阻－气敏和光透射率－气敏的灵敏度均下降,分析了产生这些现象的原因。     

快速热处理对BaSrTiO3薄膜微结构的影响

采用射频溅射法在Si基片上制备BaSrTiO3(BST)薄膜,利用X射线衍射和原子力显微镜(AFM)研究了快速热处理温度和时间对BaSrTiO3薄膜微结构的影响.结果表明:BST薄膜的衍射峰强度和结晶度随退火温度的升高而提高.随退火温度的升高,BST薄膜的表面粗糙度经历先降低后增大的过程,而BST薄膜的晶粒尺寸单调减小.当退火温度为700℃时,随退火时间的增加,BST薄膜的晶粒尺寸几乎不发生变化,而表面粗糙度单调减小.     

热处理对SnO2胶体薄膜结构和气敏性能的影响

采用Ｓｏｌ－ｇｅｌ方法制备ＳｎＯ２胶体气敏薄膜，在４００－８００℃范围对薄膜进行了热处理。ＸＲＤ和ＸＰＳ分析表明热处理前后薄膜由非晶态转变为多晶的金红石结构。在较高温度下处理的薄膜比在较低温度下处理的薄膜有更好的结晶度，稳定性有所提高，但对气体的灵敏度下降。     

Influence of heat treatment on the optoelectronic performance of electrodeposited CdSe thin films

Journal of Materials Science: Materials in Electronics - In this work, a thin film of Cadmium selenide is deposited on fluorine tin oxide-coated glass substrate through a simplified 2-electrode...     

表面热处理对氮化硼薄膜场发射特性的影响

用RF磁控溅射的方法在最佳沉积条件下在Si(100)基底上沉积了纳米氮化硼薄膜,然后对薄膜在真空度低于5×10-4Pa、温度分别为800℃和1000℃条件下进行了表面热处理,分别用红外光谱、原子力显微镜以及不同退火温度的场发射试验对薄膜进行了研究,结果表明表面热处理对BN薄膜的表面形貌没有明显影响,样品场发射特性的变化可能与表面负电子亲和势有关,未进行热处理的样品阈值电场较低,可能归因于表面负电子亲和势效应,阈值电场为8V/μm,发射电流为80μA,热处理温度为800℃时,负电子亲和势仍然存在,直到热处理温度达到1000℃时,表面负电子亲和势才消失.     

Influence of electrodeposition potential and heat treatment on structural properties of CdTe films

A modified Butler-Volmer model is developed to predict the potential of perfect stoichiometry (PPS) for electrodeposition. CdTe thin films are deposited in an acidic solution; their electrodeposition mechanism is investigated using cyclic voltammetry. Calculated and experimental PPS values exhibit good agreement. At PPS, well-connected granular CdTe thin films can be deposited; these are predicted to be intrinsic, and slightly p-type due to cadmium vacancies. Type conversion occurs only because of defect redistribution and local defect reactions after annealing; the converted n-type layer exhibits lower resistivity and higher mobility. A film annealed at 350 °C exhibits excellent crystallization.     

热处理对溶胶-凝胶TiO2薄膜的晶相转变和性能影响

以钛酸丁酯（TPOT）为有机醇盐前驱体，采用溶胶－凝胶技术制备了TiO2溶胶。为测量方便起见，分别制备了凝胶粉体和薄膜，并对样品进行了不同温度的热处理。X射线衍射（XRD）、椭偏仪和紫外－可见光谱（UV－vis)的测量表明：随热处理温度的升高，TiO2的结构由非晶到锐钛矿再到金红石相转变，400℃为锐钛矿相，600℃开始出现金红石相，800℃完全转变为金红石相；晶粒尺寸随热处理温度的升高而逐渐增大，锐钛矿结构的晶粒尺寸范围是2.5-5.5nm，金红石结构的晶粒尺寸范围是5.9-6.8nm；TiO2薄膜的折射率随热处理温度的升高而增大，同时薄膜厚度降低；禁带宽度随热处理温度的升高而增大，同时薄膜厚度降低；禁带宽度随热处理温度升高而变窄，锐钛矿结构的禁带宽度为3.45eV，而金红石结构的禁带宽度为3.30eV。     

Fe-O纳米晶合金膜的软磁和高频特性

采用等离子体增强射频磁控溅射沉积方法,在室温下制备了Fe-O合金薄膜.研究了氧的掺杂量和薄膜厚度对薄膜软磁和高频特性的影响.结果发现少量氧的掺杂不导致低饱和磁化强度铁氧化物的形成,但可使薄膜晶粒细化,矫顽力下降.在薄膜厚度低于150 nm且氧气与氩气相对流量比为2.4%的条件下,薄膜的实部磁导率高达1100且能够维持到1GHz.     

Influence of process chains on heat treatment

The results of a heat treatment are influenced by the state of the material before heat treatment, e. g. microstructure, residual stresses, surface layers, etc. Consequently, different production chains can lead to differences in microstructure and distortion behavior. In this case properties as well as time and costs of hard machining after heat treatment are influenced. This paper was first published in German in HTM Journal of Heat Treatment and Materials ©Carl Hanser Verlag, Muenchen/Germany and gives examples for the influences of production chains on thermochemical treatments such as case hardening [1].     

Influence of temperature-time heat treatment regimes on operating characteristics of oxide films as applied to copper capillary-porous structures

Temperature-time regimes of heat treatment for producing oxide films on copper capillary-porous structures (CPSs) are determined. The stability of the produced oxide films to multiple heating-cooling cycles under the conditions of the operation of evaporation-condensation systems (ECSs) is shown. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 70, No. 3, pp. 386–389, May–June, 1997.     

Influence of heat treatment on electrical properties of thermally evaporated tin diselenide (SnSe2) thin films

SnSe₂ thin films were prepared on glass substrate by thermal evaporation method. The resistivity of the films were measured in the temperature range 30–200 °C. It is observed that the as grown films are highly resistive and on heating the resistance abruptly changes. The heating and cooling curves of log of resistance versus temperature are not reproducible till the third cycle and this reproducible curve is similar to that for the films annealed at 200 °C for 3 hours.     

Effect of heat treatment on the structure of titanium dioxide films

The development of nanocrystalline phases during isothermal annealing of titanium dioxide films deposited by reactive magnetron sputtering at various rates onto silica glass substrates has been studied. It is established that the heat treatment at temperatures within 500–700°C in air or in vacuum leads to significantly different results, depending on the initial crystalline structure of as-deposited films.