LiBPON薄膜电解质的制备及电化学性能研究

应用磁控溅射法在N2气氛中制备LiBPON薄膜电解质,研究薄膜性能与沉积条件的关系,优化其制备条件.扫描电镜图显示其表面平整均匀致密,X射线衍射及交流阻抗测试分别表明该薄膜呈非晶态,室温离子电导率随溅射功率增大而减小,随N2压力增大而增大,最高达3.5×10-6S/cm;薄膜的沉积速率随溅射功率增大而增大,随N2压力增大而减小.N的结合对电解质的电化学性能有明显改善,作为薄膜锂电池电解质有良好的应用前景.     

真空蒸镀法制备锡薄膜及其嵌锂电化学性能

采用真空蒸镀法在铜片基底上沉积锡薄膜作为锂离子电池负极材料,对所制备的锡薄膜采用扫描电子显微镜、X射线衍射表征,研究了其表面形貌和组成。 将制备的薄膜在手套箱中组装成CR2032型钮扣式电池,进行电化学测试,研究其电化学性能。 实验结果表明,在相同蒸发时间和基底温度的条件下,随着蒸发功率的增加,沉积的锡颗粒逐渐增大,相应的电化学性能降低。 以蒸发功率200 W、基底温度150 ℃制得的样品粒径为100~200 nm,含有Cu6Sn5合金相,以0.2C倍率充放电循环20周后放电容量达527 mA·h/g。     

通过溅射与退火制备的用于固体氧化物燃料电池的氧化钆掺杂氧化铈电解质隔层

采用溅射或溅射与退火相结合的方法制备了一系列氧化钆掺杂的氧化铈（GDC）隔层,并考察了其对固体氧化燃料电池性能的影响. 结果表明,200 ℃下溅射获得了立方结构氧化钆掺杂的氧化铈均匀薄膜,在900-1100 ℃范围内的退火处理使得GDC薄膜致密,从而有效阻止了氧化钇掺杂的氧化锆电解质与阴极材料之间的反应,大幅度提高了电池的电化学性能.     

共溅法制备锂离子电池Sn-Al/Cu复合薄膜及其电化学性能

采用磁控溅射共溅法,在铜箔和泡沫铜基底上分别制备了平面和三维网状结构的Sn-Al/Cu复合薄膜.表征了其结构,并研究了其作为锂离子电池负极材料的电化学性能.结果表明,三维网状结构的电化学性能明显优于平面复合薄膜,表现出很好的循环性能和倍率性能:以600 mA/g电流密度充放电,三维网状结构的复合薄膜有较好的容量保持率,循环50周后容量保持在410 mA·h/g;以2000 mA/g电流密度充放电,再以500 mA/g电流密度进行充放电,三维网状结构的复合薄膜仍有464 mA·h/g的放电容量.三维网状结构的Sn-Al复合薄膜能抑制充放电时带来的体积膨胀,较大的表面积和粗糙表面可以使其与锂充分反应,改善其电化学性能.     

电化学还原预处理对BiVO_4薄膜电极光电化学氧化水性能的提高

在酸性水溶液中(pH=2.0),采用电化学还原(ER)方法对BiVO4薄膜电极进行预处理,并探讨了其对薄膜电极光电化学氧化水性能的影响.结果表明,这种预处理可显著提高电极的光电化学氧化水的性能,且具有良好的光电化学稳定性.利用扫描电子显微镜、X射线衍射、拉曼光谱、光电子能谱、紫外-可见漫反射光谱、荧光光谱、电化学阻抗谱及Mott-Schottky等方法对ER处理前后的电极进行了表征.结果表明,ER预处理使电极粗糙度增大,表面积增大约1.4倍;电极材料的晶型无明显变化,但V—O对称伸缩振动略有红移;表面Bi,V和O结合能变小,Bi3+部分被还原,Bi/V原子比增大;ER处理导致电极平带电位负移,光生载流子在薄膜电极/溶液界面转移速率加快,表面复合速率降低.这些变化和表面积增加是BiVO4电极光电化学性能提高的主要原因.     

钕修饰载体的PtRu/Nd/C薄膜结构及电催化性能

采用离子束多靶溅射沉积技术(IBS),在Nd修饰的碳载体上制备了PtRu/Nd/C纳米合金薄膜作为直接甲醇燃料电池(DMFC)阳极催化剂,并对PtRu/Nd/C薄膜催化剂进行了不同条件的氧化处理.应用XRD,XPS,AFM等分析手段研究了薄膜表面的成分、化学状态、结构及表面形貌,并用循环伏安法(CV)测试了薄膜催化剂对甲醇的催化氧化性能.结果表明,由于溅射产生的Pt+,Ru+和稀土Nd膜层之间的相互作用,使PtRu/Nd薄膜的表面形貌发生粗化并抑制了PtRu薄膜表层的择优生长,增大了PtRu/Nd/C薄膜催化剂的电化学比表面积,催化活性明显提高;经氧化处理后,PtRu/Nd/C催化剂表面RuO2物种数量增加,进一步提高了催化剂对甲醇的催化性能,特别是PtRu/Nd/C薄膜催化剂经40min的氧化处理后,出现异常的电流峰.     

ZnO及其含锌混合氧化物薄膜的充放电性能研究

从充放电性能、晶体结构等方面考察了包括粉末状的ZnO、脉冲激光沉积方法制备的ZnO薄膜和含锌混合氧化物薄膜的电化学性质.结果表明,ZnO粉末制备的电极的嵌入容量随退火温度的升高而增大,掺入其他氧化物可以明显改善ZnO薄膜的电化学性能,在Ar气氛中,基片温度为400℃时,沉积的靶子成分为Zn:B:P:Al=1:1:0.5:0.5(摩尔比)的含锌混合氧化物薄膜具有较高的可逆容量,且循环性能良好.     

锂离子电池锡薄膜负极制备及电化学性能研究

应用真空蒸发法在泡沫铜基底上制备锡薄膜负极.XRD、SEM分析表征薄膜的物相结构及其微观形貌,并测试了材料的电化学性能.结果表明,泡沫铜基底的三维结构增强了活性物质与基底的结合力.在同一基底温度下,锡颗粒随蒸发时间延长逐渐增大,电池电化学性能降低;而在同一时间内,升高基底温度,颗粒无明显变化,电池循环寿命有了很大提高.样品A″电池(基底温度:200℃,蒸发时间:0.5 h)经100次充放电循环后比容量仍达407.3 mAh·g-1.     

磁控溅射制备的铜钒氧化物薄膜及其电化学性能

采用射频磁控溅射技术在硅基底上分别制备了无掺杂和掺杂Cu的氧化钒薄膜. X射线衍射(XRD)分析和扫描电子显微镜(SEM)观察表明, 无掺杂的薄膜为多晶V2O5, 掺杂Cu的薄膜为非晶态. X射线光电子能谱(XPS)分析结果表明, 掺杂Cu的薄膜为铜钒氧化物膜, 其中Cu离子表现为+2价, V离子为+4与+5价的混合价态. 随着Cu掺杂量的增大, +4价V的含量增加. 电化学测试结果表明, V2O5薄膜在掺杂Cu以后其放电容量有显著的提高, 其中Cu2.1VO4.4薄膜在100次循环后容量还保持为83.4 μA·h·cm-2·μm-1, 表现出较高的放电容量和较好的循环性能.     

掺杂P,Al和La元素的锂离子电池材料的微波合成研究

采用微波合成法制备了含掺杂P,Al和La元素的正极材料LiCoO2,确定了工艺条件,包括反应时间、微波功率和反应温度.采用XRD,SEM和电化学测试仪研究了添加元素对LiCoO2结构和电化学性能的影响.研究发现,微波功率和反应时间对产物的结构有比较明显的影响.充放电试验结果表明,掺加La元素正极材料LiCoO2首次充放电容量达到了130 mAh.g-1.     

X-Ray Analysis of Multi-Films for Electrochromic Device Application

Multilayer films based on tungsten oxide (WO₃), ITO (indium tin oxide) and CdS were deposited mainly by reactive dc magnetron sputtering onto glass substrates for electrochromic application. The thin films were analyzed by means of XPS (X-ray photoelectron spectroscopy), GIXD (grazing incidence X-ray diffraction) and XRD (X-ray diffraction). XRD and XPS results confirmed that the films were WO₃, CdS and ITO, respectively. The surface and interface of the CdS/ITO bi-layered film was studied by GIXD in different incidence angles. Detailed results about the amorphous characterization of the films during room temperature growth and post annealing are given.     

Enhancement of thin film tin oxide negative electrodes for lithium batteries

Thin films of pure SnO₂, of the Sn/Li₂O layered structure, and of Sn/Li₂O were fabricated by sputtering method, while a `lithium-reacted tin oxide thin film' was assembled by the evaporation of lithium metal onto a SnO₂ thin film. Film structure and charge/discharge characteristics were compared. The lithium-reacted tin oxide thin film, the Sn/Li₂O layered structure, and the Sn/Li₂O co-sputtered thin films did not show any irreversible side reactions of forming Li₂O and metallic Sn near 0.8 V vs Li/Li⁺. The initial charge retention of the Sn/Li₂O layered structure and Sn/Li₂O co-sputtered thin films was about 50% and a similar value was found for the lithium-reacted tin oxide thin film (more than 60%). Sn/Li₂O layered structure and Sn/Li₂O co-sputtered thin films showed better cycling behavior over 500 cycles than the pure SnO₂ and lithium-reacted tin oxide thin film in the cut-off range from 1.2 to 0 V vs Li/Li⁺.     

Thin Film of Perovskite Oxide with Atomic Scale p-n Junctions

Thin films of perovskite manganese oxide La_0.66Ca_0.29K_0.05MnO₃(LCKMO) on Au/ITO(ITO=indium tin oxide) substrates were prepared by off-axis radio frequency magnetron sputtering and characterized by X-ray diffraction( XRD), high-resolution transmission electron microscopy(HRTEM), and conductive atomic force microscopy (C-AFM) at room temperature. The thin films with thickness ranged from 100 nm to 300 nm basically show cubic structures with a=0.3886 nm, the same as that of the raw material used, but the structures are highly modulated. C-AFM results revealed that the atomic scale p-n junction feature of the thin films was the same as that of the single crystals. The preparation of the thin films thus further confirms the possibility of their application extending from micrometer-sized single crystals to macroscopic thin film.     

Tin oxide coating on polytetrafluoroethylene films in aqueous solutions

Polytetrafluoroethylene (PTFE) films were successfully coated with tin oxide in aqueous solutions. Tin oxide was crystallized in the solution and formed nanocrystal coatings on the polymer films. The coatings consisted of SnO₂ and SnO crystals. They were assemblies of tin oxide nanosheet of about 10 to 50 nm in size and about 5 nm in thickness. The nanocrystal films can be exfoliated from the PTFE substrates. Tin oxide nanocrystal films had a rough liquid surface and a dense substrate‐side surface. Transparency of PTFE films coated with tin oxide was same as that of bare PTFE films in the range from 400 to 800 nm. The PTFE films coated with tin oxide nanocrystals can be pasted on desired substrates. Copyright © 2009 John Wiley & Sons, Ltd.     

The effect of glow discharge sputtering on the analysis of metal oxide films

The potential of radiofrequency glow discharge optical emission spectrometry (rf-GD-OES) for the quantification and the solid-state speciation of metal oxide films has been investigated in this work. Two types of oxide coatings, an iron oxide film deposited on silicon and a chromate conversion coating (CCC), were studied at 700 Pa of pressure and 30 W of forward power. The metal to oxygen ratios in the quantitative depth profiles (Fe/O and Cr/O, respectively) were used to evaluate the oxidation states of iron and chromium in the oxide films, demonstrating the capability of GD-OES technique for depth-resolved solid-state speciation. Furthermore, the effect of glow discharge sputtering on the samples surface in terms of modifications in the surface morphology and species transformations, were investigated by using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The iron and chromium oxidation states were carefully studied by XPS at the original samples surface and at the bottom of GD craters, and a systematic reduction of metal elements was observed after rf-GD-OES analysis. In the case of thin oxide films, preferential sputtering can be considered as a critical factor since oxygen atoms can be preferentially sputtered, leaving a metal-enriched surface and, therefore, promoting the reduction of metal elements. In the present study preferential sputtering was found to be sample dependent, changing the proportion of the metal reduction in the oxide film with its composition. Additionally, alternative sputter-depth-profiling techniques such as secondary ion mass spectrometry (SIMS), femtosecond laser ablation (fs-LA), and XPS ion gun were used for the analysis of the CCC in order to evaluate the reduction of Cr⁶⁺ to Cr³⁺ depending on the sputtering mechanism.     

Effects of the polarizability and packing density of transparent oxide films on water vapor permeation

The tin oxide and silicon oxide films have been deposited on polycarbonate substrates as gas barrier films, using a thermal evaporation and ion beam assisted deposition process. The oxide films deposited by ion beam assisted deposition show a much lower water vapor transmission rate than those by thermal evaporation. The tin oxide films show a similar water vapor transmission rate to the silicon oxide films in thermal evaporation but a lower water vapor transmission rate in IBAD. These results are related to the fact that the permeation of water vapor with a large dipole moment is affected by the chemistry of oxides and the packing density of the oxide films. The permeation mechanism of water vapor through the oxide films is discussed in terms of the chemical interaction with water vapor and the microstructure of the oxide films. The chemical interaction of water vapor with oxide films has been investigated by the refractive index from ellipsometry and the OH group peak from X-ray photoelectron spectroscopy, and the microstructure of the composite oxide films was characterized using atomic force microscopy and a transmission electron microscope. The activation energy for water vapor permeation through the oxide films has also been measured in relation to the permeation mechanism of water vapor. The diffusivity of water vapor for the tin oxide films has been calculated from the time lag plot, and its implications are discussed.     

氮掺杂二氧化钛-氧化镍双层薄膜的光电致色特性

以金属钛为靶材、O2/N2/Ar混合气氛为溅射气体,在导电玻璃(ITO)表面磁控溅射一层薄膜,再经300-500℃退火处理制备了氮掺杂TiO2薄膜.采用X射线衍射(XRD)、X光电子能谱(XPS)、扫描电子显微镜(SEM)和紫外-可见吸收光谱等对薄膜的微观结构、光学特性和光电化学性能等进行了研究.进而采用化学沉积的方法在TiO2-xNx薄膜表面沉积上一层多孔NiO薄膜,研究表明,制备的ITO/TiO2-xNx/NiO双层薄膜具有明显的光电致色特性,400℃退火处理的氮掺杂TiO2薄膜具有最高的光电流响应,经氙灯照射1h后,薄膜从无色变成棕色,500nm波长处光透过率从79.0%下降至12.6%.     

The influence of electrode metals and its configuration on the response of tin oxide thin film CO sensor

Thin films of tin oxide were deposited by electron beam evaporation. The effects of the electrode materials (Ag, Al, Au and Pt) and different electrode configurations on the CO-sensing of tin oxide thin films were investigated. The Pt and Au electrodes with bottom electrode configuration show much higher response than Ag and Al electrodes. The sensor response and recovery times have also been measured. The films were characterized using X-ray diffraction and X-ray photoelectron spectroscopy. All the films were found to be amorphous. It was found that the CO-sensing properties depend both on the electrode materials and configuration.     

Novel alignment mechanism of liquid crystal on a hydrogenated amorphous silicon oxide

The mechanism of liquid crystal (LC) alignment has been investigated during the last few decades for inorganic materials as well as for organic materials; however, it has not been clearly confirmed for some alignment materials. Inorganic alignment materials such as amorphous silicon oxide (a-SiOx) and hydrogenated amorphous silicon oxide (a-SiOx:H) are deposited on indium tin oxide (ITO) films on glass by reactive sputtering deposition. After deposition, the inorganic alignment materials are irradiated using an Ar+ ion beam (IB) for LC alignment. On the basis of the experimental results, a-SiOx films deposited by the sputtering do not align the LC, but a-SiOx:H films treated with varying IB energies, IB incident angles, IB doses, and IB irradiation times have excellent alignment properties and electrooptical properties, identical to those of polyimide (PI). These results imply that inorganic alignment layers irradiated by IB can be adopted as an LC alignment layer instead of rubbed PI. Additionally, hydrogen plays an important role in LC alignment because of the difference in alignment properties between a-SiOx films and a-SiOx:H films. We investigate the mechanism of IB-treated inorganic alignment layers and suggest that LCs are aligned by chemical effects, such as van der Waals interaction, more than by physical effects, such as morphology effects, in the inorganic alignment layer irradiated by IB.     

A platinum counter electrode with high electrochemical activity and high transparency for dye-sensitized solar cells

Ultra-thin platinum films were deposited on indium tin oxide (ITO) substrates in a sputtering process and used as counter electrodes of dye-sensitized solar cells. The nano-structured Pt film not only has a high transmittance (75%), but also has a lower charge-transfer resistance compared with that of thick Pt films. Under front-side illumination, the synergistic effects of the nano-structured Pt film (1.4 nm) and a reflective aluminum foil can increase the efficiency of a normal cell from 6.8 to 7.9%. For the back-side illumination, the efficiency achieved by using the present strategy is 6.6%, which is comparable to the front-side illuminated efficiency of DSSCs using thick Pt films (ca. 6.8%).