Magnetization reversal in bulk and thin films of the ferrimagnetic ErCo0.50Mn0.50O3 perovskite

We present herein a comparison of the magnetic properties of bulk ceramics and thin films of the ferrimagnetic ErCo_0.50Mn_0.50O₃ compound. Epitaxial thin films were deposited onto (1 0 0) SrTiO₃ substrates by pulsed-laser ablation while bulk ceramics were prepared by solid state reaction. When cooling under low applied fields, a spin reversal is observed in both thin film and bulk due to the competition between two magnetic sublattices (Co/Mn and Er) coupled by a negative exchange interaction. Original features are observed in the M(H) loops for bulk materials: abrupt jumps at 4 T due to a reorientation of domains, while in the low field region, the increasing and decreasing branches of the magnetization intersect each other. In the thin film, the ordering temperature increased from 69 to 75 K, and the ZFC anomaly (AF transition) became sharper, compared to the bulk specimen. The oxygen content and the microstructure are crucial to observe the intersection of the magnetization branches.     

Microstructure and magnetic properties of Ni-rich Ni54Mn25.7Ga20.3 ferromagnetic shape memory alloy thin film

A Ni₅₄Mn_25.7Ga_20.3 ferromagnetic shape memory alloy thin film has been fabricated by using the RF magnetron-sputtering technique. The structure and magnetic properties of the film were systematically investigated. The results show that the film is in ferromagnetic martensite state at room temperature with the Curie temperature (T_c) of about 370 K. The saturation magnetization (M_s) of the film reaches 45 emu/g at 300 K, which is about 80% as large as that of Ni–Mn–Ga bulk material. The magnetization hysteresis loops significantly depend on temperatures. The residual magnetization (M_r) and the coercive force (H_c) increase with decreasing temperatures. The grains homogeneously distribute in the film. The microstructure of the film consists of martensite plates. The interface between the martensite variants is clear and straight, indicating a good mobility.     

Dependence of magnetic anisotropy of the La0.67Ca0.33MnO3 films on substrate and film thickness

Strain in the La_0.67Ca_0.33MnO₃ films has been tuned by varying substrate and film thickness, and its effects on magnetic anisotropy are studied based on the measurements of isothermal magnetization. Measuring the strain in the films by the out-of-plane lattice parameter (c), we found a strong dependence of the magnetic anisotropy constant (Ku) on strain. Ku decreases linearly from ∼−1.1×10⁶ erg/cm³ for c=0.763 nm to 1.2×10⁶ erg/cm³ for c=0.776 nm, corresponding to a change from tensile strain to compressive strain. Positive Ku signifies a uniaxial anisotropy with the easy axis perpendicular to the film plane, while negative Ku demonstrates an anisotropy of the easy plane character. Smaller or larger c leads a decrease or increase in Ku, which indicates the presence of other effects in addition to those associated with strain. Three distinctive processes for the magnetization are observed along the hard magnetic axis of the films on (001)SrTiO₃, suggesting a possibility of strain relaxation even in ultra-thin films.     

Effect of oxygen pressure on microstructure and magnetic properties of strontium hexaferrite (SrFe12O19) film prepared by pulsed laser deposition

The effects of oxygen pressure during deposition on microstructure and magnetic properties of strontium hexaferrite (SrFe₁₂O₁₉) films grown on Si (100) substrate with Pt (111) underlayer by pulsed laser deposition have been investigated. X-ray diffraction pattern confirms that the films have c-axis perpendicular orientation. The c-axis dispersion (Δθ₅₀) increases and c-axis lattice parameter decreases with increasing oxygen pressure. The films have hexagonal shape grains with diameter of 150-250 nm as determined by atomic force microscopy. The coercivities in perpendicular direction are higher than those in in-plane direction, which shows the films have perpendicular magnetic anisotropy. The saturation magnetization and anisotropy field for the film deposited in oxygen pressure of 0.13 mbar are comparable to those of the bulk strontium hexaferrite. Higher oxygen pressure leads to the films having higher coercivity and squareness. The coercivity in perpendicular and in-plane directions of the film deposited in oxygen pressure of 0.13 mbar are 2520 Oe and 870 Oe, respectively.     

Half Ca-doped LaMnO3 films on (0 0 1) SLAO and STO substrate studied by magnetization and transport measurements

In this study, La_0.5Ca_0.5MnO₃ (LCMO) films, at the boundary between ferromagnetic metallic and charge-ordered antiferromagnetic insulator according to the bulk phase diagram, were epitaxially grown on (0 0 1) SrTiO₃ (STO) and SrLaAlO₄ (SLAO) substrates by pulsed laser deposition technique. The films were analyzed by X-ray diffraction, magnetization and magnetoresistance measurements. A considerably higher magnetization was measured for 290-nm-thick film on SLAO substrate compared to the film on STO substrate, although both films have the same chemical composition, thickness and epitaxial orientation. The film on SLAO shows a metal-insulator (MI) transition, which occurs at higher temperatures with increasing applied magnetic field, whereas only insulating behavior was observed for the 290-nm-thick film on STO except for the highest applied magnetic field (7 T). In addition, transport measurements were performed and analyzed by Mott's variable range hopping (VRH) model to correlate the resistivity of the films with the Jahn-Teller strain (ε_J−T) in the structure.     

Ferromagnetic resonance observation of a phase transition in magnetic field-aligned Fe2O3 nanoparticles

Fe₂O₃ hematite (alpha) nanoparticles suspended in the liquid phase of the liquid crystal 4,4-azoxyanlsole (PAA) are cooled below the freezing temperature (397 K) in a 4000 G dc magnetic field. The in field solidification locks the direction of maximum magnetization of the particles parallel to the direction of the applied dc magnetic field removing the effects of dynamical fluctuations of the nanoparticles on the magnetic properties allowing a study of the intrinsic magnetic properties of the nanoparticles as well as the anisotropic behavior of the ferromagnetic resonance (FMR) signal. Freezing in PAA allows temperature-dependent measurements to be made at much higher temperature than previous measurements. The field position, line width and intensity of the FMR signal as a function of temperature as well as the magnetization show anomalies in the vicinity of 200 K indicative of a magnetic transition, likely the previously observed Morin transition shifted to lower temperature due to the small particle size. Weak ferromagnetism is observed below T_c in contrast to the bulk material where it is antiferromagnetic below T_c. The Raman spectrum above and below 200 K shows no evidence of a change in lattice symmetry associated with the magnetic transition.     

Structure, magnetic and electrical transport properties of cosputtered Fe0.5Ge0.5 nanocomposite films

Fe_0.5Ge_0.5 nanocomposite films with different film thicknesses were fabricated using cosputtering. The films are composed of Ge, Fe and Fe₃Ge₂, and are ferromagnetic at room temperature. The saturation magnetization and magnetic interaction including dipolar interaction and exchange coupling increase with the increasing film thickness. The electrical conductance mechanism turns from metallic to semiconducting and the saturation Hall resistivity ρ_xys increases with the decreasing film thickness. At 28 nm, ρ_xys is ∼137 μΩ cm at 2 K, about 150 times larger than that of pure Fe film (0.9 μΩ cm) and four orders larger than that of bulk Fe. The ρ_xy-H curves of all the films show the same linearity character in low-field range even though the temperature-independent slope is different at different film thicknesses. At high temperatures, the skew scattering mechanism is dominant. At low temperatures, side-jump effect should be dominant at large resistivity ρ_xx regime for the thin films, and the skew scattering is dominant at small ρ_xx regime for the thick films.     

Structural, AC, and DC magnetic properties of Zn1−xCoxFe2O4

Structural, AC and DC magnetic properties of polycrystalline Zn_1−xCo_xFe₂O₄ (x=0.2, 0.4) samples sintered at various temperatures (1100-1300 °C), and various dwell times (0.2-15 h) have been investigated thoroughly. The bulk density of the Zn_0.60Co_0.40Fe₂O₄ samples increases as the sintering temperature (T_s) increases from 1100 to 1250 °C, and above 1250 °C the bulk density decreases slightly. The Zn_0.80Co_0.20Fe₂O₄ samples show similar behavior of changes to that of Zn_0.60Co_0.40Fe₂O₄ samples except that the bulk density is found to be highest at 1200 °C. The DC magnetization as a function of temperature curves show that the Zn_0.60Co_0.40Fe₂O₄ sample is ferrimagnetic at room temperature while the Zn_0.80Co_0.20Fe₂O₄ sample is paramagnetic at room temperature. The T_c of Zn_0.80Co_0.20Fe₂O₄ sample is found to be 170 K from DC magnetization measurement. Separate measurement (AC magnetization), initial permeability as a function of temperature shows that the T_c of the Zn_0.60Co_0.40Fe₂O₄ sample is 353 K. Slight variation of T_c is observed depending on sintering condition. The initial permeability for the Zn_0.60Co_0.40Fe₂O₄ composition sintered at 1250 °C is found to be maximum.     

Effect of pressure and magnetic field on bilayer La1.25Sr1.75Mn2O7 single crystal

We report the temperature dependence of susceptibility for various pressures, magnetic fields and constant magnetic field of 5 T with various pressures on La_2−2xSr_1+2xMn₂O₇ single crystal to understand the effectiveness of pressure and magnetic field in altering the magnetic properties. We find that the Curie temperature, T_c, increases under pressure (dT_c/dP=10.9 K/GPa) and it indicates the enhancement of ferromagnetic phase under pressure up to 2 GPa. The magnetic field dependence of T_c is about 26 K for 3 T. The combined effect of pressure and constant magnetic field (5 T) shows dT_c/dP=11.3 K/GPa and the peak structure is suppressed and broadened. The application of magnetic field of 5 T realizes 3D spin ordered state below T_c at atmospheric pressure. Both peak structure in χ_c and 3D spin ordered state are suppressed, and changes to 2D-like spin ordered state by increase of pressure. These results reveal that the pressure and the magnetic field are more competitive in altering the magnetic properties of bilayer manganite La_1.25Sr_1.75Mn₂O₇ single crystal.     

Influence of microstructures on exchange bias behaviors of La0.7Sr0.3MnO3/La0.33Ca0.67MnO3 bilayers

Ferromagnetic La_0.7Sr_0.3MnO₃ (LSMO) and antiferromagnetic La_0.33Ca_0.67MnO₃ (LCMO) layers were grown on SrTiO₃ (STO) substrates by the pulsed laser deposition technique. LSMO films had rougher surfaces and larger grain sizes than LCMO films. Fully strained bilayers, in which each layer was as thin as 10 nm, were prepared by changing their stacking sequences, i.e. LSMO/LCMO/STO and LCMO/LSMO/STO. The former had higher T_C (350 K) than the latter (300 K), and exchange bias effects were only observed in the former bilayers. This revealed that microstructures could play an important role in the transport and magnetic properties of manganese oxide thin films.     

Magnetic behavior of MnAs precipitates in Ga1−xMnxAs diluted magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x≈4.7–5.5%) were grown on (1 0 0) GaAs substrates by molecular beam epitaxy. These p-type (Ga,Mn)As films were revealed to have a ferromagnetic structure and ferromagnetism is observed up to a Curie temperature of 318 K, which is ascribed to the presence of MnAs secondary magnetic phases within the film. It is highly likely that the phase segregation occurs due to the high Mn cell temperature around 890–920 °C, as it is well established that GaMnAs is unstable at such a high temperature. The MnAs precipitate in the samples with x≈4.7–5.5% has a Curie temperature T_c≈318 K, which was characterized from field-cooled and zero-field-cooled magnetization curves.     

Phase transition in Ising, XY and Heisenberg magnetic films

The phase transition and magnetic properties of a ferromagnet spin-S, a disordered diluted thin and semi-infinite film with a face-centered cubic lattice are investigated using the high-temperature series expansions technique extrapolated with Padé approximants method for Heisenberg, XY and Ising models. The reduced critical temperature of the system τ_c is studied as function of the thickness of the thin film and the exchange interactions in the bulk, and within the surfaces J_b, J_s and J_⊥, respectively. It is found that τ_c increases with the exchange interactions of surface. The magnetic phase diagrams (τ_c versus the dilution x) and the percolation threshold are obtained. The shifts of the critical temperatures T_c(l) from the bulk value (T_c(∞)/T_c(l) − 1) can be described by a power law l^−λ, where λ = 1/υ is the inverse of the correlation length exponent.     

Magnetic anomalies in single crystalline ErPd2Si2

Considering certain interesting features in the previously reported ¹⁶⁶Er Mössbauer effect, and neutron diffraction data on the polycrystalline form of ErPd₂Si₂ crystallizing in the ThCr₂Si₂-type tetragonal structure, we have carried out magnetic measurements (1.8–300 K) on the single crystalline form of this compound. We observe significant anisotropy in the absolute values of magnetization (indicating that the easy axis is c-axis) as well as in features due to magnetic ordering in the plot of magnetic susceptibility χ versus temperature T at low temperatures. The χ(T) data reveal that there is a pseudo-low-dimensional magnetic order setting in at 4.8 K, with a three-dimensional antiferromagnetic order setting in at a lower temperature (3.8 K). A new finding in the χ(T) data is that, for H∥〈1 1 0〉 but not for H∥〈0 0 1〉, there is a broad shoulder in the range 8–20 K, indicative of the existence of magnetic correlations above 5 K as well, which could be related to the previously reported slow-relaxation-dominated Mössbauer spectra. Interestingly, the temperature coefficient of electrical resistivity is found to be isotropic; no feature due to magnetic ordering could be detected in the electrical resistivity data at low temperatures, which is attributed to magnetic Brillioun-zone boundary gap effects. The results reveal the complex nature of magnetism of this compound.     

Orientation-dependent dielectric properties of Ba(Sn0.15Ti0.85)O3 thin films prepared by sol-gel method

The orientation-dependent dielectric properties of barium stannate titanate (Ba(Sn_0.15Ti_0.85)O₃, BTS) thin films grown on (1 0 0) LaAlO₃ single-crystal substrates through sol-gel process were investigated. The nonlinear dielectric properties of the BTS films were measured using an inter-digital capacitor (IDC). The results show that the in-plane dielectric properties of BTS films exhibited a strong sensitivity to orientation. The upward shift of Curie temperature (T_c) of the highly (1 0 0)-oriented BTS thin films is believed to be attributing to a tensile stress along the in-plane direction inside the film. A high tunability of 47.03% was obtained for the highly (1 0 0)-oriented BTS films, which is about three times larger than that of the BTS films with random orientation, measured at a frequency of 1 MHz and an applied electric field of 80 kV/cm. This work clearly reveals the highly promising potential of BTS films for application in tunable microwave devices.     

Photocontrol of magnetization in Al-substituted Fe3O4 thin films

Thin films of (111)-oriented spinel ferrite Al_0.5Fe_2.5O₄ have been prepared by a pulsed-laser deposition (PLD) technique on α-Al₂O₃ (0001) substrates. The films exhibit cluster-glass behaviors with a spin-freezing temperature, T_g, near or above room temperature. The magnetization was found to increase following light irradiation below T_g, which indicates the photoinduced melting of cluster-glass states. An analysis comparing the dynamic behavior of magnetic response to light irradiation between zero-field-cooled (ZFC) states and field-cooled (FC) states at 10 K under various light intensities, I, revealed that the direct photoexcitation of spins occurs when I≤0.78 mW/mm², while the thermal heating effect following the light absorption of the samples also contributes to the enhancement of magnetization when I≥1.22 mW/mm². The magnetization of the films could be controlled by light irradiation even at room temperature. This suggests the possibility of utilizing these films in the development of novel magneto-optical memory devices.     

Structural,electrical transport,and magnetic properties of Ni1−xZnxFe2O4

Structural, electrical, and magnetic properties of Ni_1−xZn_xFe₂O₄ (x=0.2, 0.4) samples sintered at various temperatures have been investigated thoroughly. The bulk density of the Ni_0.8Zn_0.2Fe₂O₄ samples increases as the sintering temperature (T_s) increases from 1200 to 1300 °C and above 1300 °C the bulk density decreases slightly. The Ni_0.6Zn_0.4Fe₂O₄ samples show similar behavior of changes to that of Ni_0.8Zn_0.2Fe₂O₄ samples, except that the bulk density is found to be the highest at 1350 °C. The DC electrical resistivity, ρ(T)$\rho (T)$, decreases as the temperature increases indicating that the samples have semiconductor-like behavior. As the Zn content increases, the Curie temperature (T_c), resistivity, and the activation energy decrease while the magnetization, initial permeability, and the relative quality factor (Q) increases. A Hopkinson peak is obtained near T_c in the real part of the initial permeability vs. temperature curves. The ferrite with higher permeability has a relatively lower resonance frequency. The initial permeability and magnetization of the samples has been found to correlate with density, average grain sizes. Possible explanation for the observed structural, magnetic, and changes of resistivity behavior with various Zn content are discussed.     

Crystal structural, magnetic and electrical transport properties of CeKFeMoO6 double perovskite

The crystal structural, magnetic and electrical transport properties of double perovskite CeKFeMoO₆ have been investigated. The crystal structure of the compound is assigned to the monoclinic system with space group P2₁/n and its lattice parameters are a=0.55345(3) nm, b=0.56068(2) nm, c=0.78390(1) nm, β=89.874(2). The divergence between zero-field-cooling and field-cooling M-T curves demonstrates the anisotropic behavior. The Curie temperature measured from C_p-T curve is about 340 K. Isothermal magnetization curve shows that the saturation and spontaneous magnetization are 1.90 and 1.43 μ_B/f.u. at 300 K, respectively. The electrical behavior of the sample shows a semiconductor. The electrical transport behavior can be described by variable range hopping model. Large magnetoresistance, −0.88 and −0.18, can be observed under low magnetic field, 0.5 T, at low and room temperature, respectively.     

TbMnO3 epitaxial thin films by pulsed-laser deposition

Epitaxial TbMnO₃ films have been fabricated on SrTiO₃(001) and LaAlO₃(001) substrates by pulsed laser deposition (PLD), the structure and surface morphology of the films were characterized by X-ray diffraction with Cu K_α radiation and atomic force microscopy. The electrical transport and magnetic properties of the TbMnO₃ films and bulk were examined, the resistivity and the forbidden band width E_g change with epitaxial orientation, semiconductor transport properties are found in the films and bulk, the average of the E_g of the films on SrTiO₃ and on LaAlO₃ is equal to the E_g of the bulk. The two TMO films have different magnetization mode, the magnetization of the film on SrTiO₃ have an analogy to that of TbMnO₃ single crystal.     

Growth temperature dependence of the hysteretic behavior of Ni0.5Zn0.5Fe2O4 thin films

Herein, a discussion of the effect of deposition temperature on the magnetic behavior of Ni_0.5Zn_0.5Fe₂O₄ thin films. The thin films were grown by r.f. sputtering technique on (1 0 0) MgO single-crystal substrates at deposition temperatures ranging between 400 and 800 °C. The grain boundary microstructure was analyzed via atomic force microscopy (AFM). AFM images show that grain size (φ∼70-112 nm) increases with increasing deposition temperature, according to a diffusion growth model. From magneto-optical Kerr effect (MOKE) measurements at room temperature, coercive fields, H_c, between 37and 131 Oe were measured. The coercive field, H_c, as a function of grain size, reaches a maximum value of 131 Oe for φ ∼93 nm, while the relative saturation magnetization exhibits a minimum value at this grain size. The behaviors observed were interpreted as the existence of a critical size for the transition from single- to multi-domain regime. The saturation magnetization (21 emu/g<M_s<60 emu/g) was employed to quantify the critical magnetic intergranular correlation length (L_c≈166 nm), where a single-grain to coupled-grain behavior transition occurs. Experimental hysteresis loops were fitted by the Jiles-Atherton model (JAM). The value of the k-parameter of the JAM fitted by means of this model (k/μ_o∼50 A m²) was correlated to the domain size from the behavior of k, we observed a maximum in the density of defects for the sample with φ∼93 nm.     

Studies on fabrication of Ag/Tl2Ba2Ca2Cu3O10/CdSe heterostructures with electrochemical technique

The Ag/Tl₂Ba₂Ca₂Cu₃O₁₀/CdSe heterostructure was fabricated at room temperature by soft electrochemical processing technique for the first time. The formation of the heterostructure with non-diffusive interfaces was confirmed by X-ray diffraction. The crystallite sizes determined for Tl-2223 and CdSe films were 33 nm and 25 nm, respectively. The Tl₂Ba₂Ca₂Cu₃O₁₀ film electrodeposited onto Ag-substrate has shown the superconducting transition temperature T_c at 116.5 K and J_c = 2.1 × 10³ A/cm². These values were found to improve after the deposition of CdSe onto Ag/Tl-2223 films. The effect of red He-Ne laser irradiation on the superconducting properties of heterostructure are studied and discussed at length in this paper.