共查询到20条相似文献,搜索用时 125 毫秒
1.
化学气相沉积铜薄膜研究进展 总被引:1,自引:0,他引:1
本综术了集成电路工艺的Cu布线中Cu薄膜化学气相沉积(CVD)的研究背景,详细介绍了CVD生长Cu金属薄膜的国内外研究进展及CVD对前趋物的要求,并对前趋物的一些物理、化学性质进行了总结,最后,对薄膜沉积的计算机摸拟作了简要介绍。 相似文献
2.
3.
Cu上石墨烯的化学气相沉积法生长研究 总被引:1,自引:0,他引:1
利用自行搭建的化学气相沉积(CVD)设备在Cu箔衬底上成功的制备出石墨烯薄膜,并利用光学显微镜和拉曼光谱分析等手段对石墨烯薄膜的形貌和结构进行了表征.主要研究了Cu箔的表面处理和沉积过程的气体流量对石墨烯质量的影响,发现氨水处理Cu箔可以腐蚀Cu箔表面的各种杂质提高Cu箔的洁净度从而提高石墨烯的结晶质量,优化CH4和H2的气体流量可以提高石墨烯的单层性和均匀性.并最终在CH4∶H2=200∶0 sccm条件下,在氨水处理过的Cu箔上获得了面积1.5 cm×1.5 cm的均匀的单层石墨烯. 相似文献
4.
光化学气相沉积(光 CVD)是一种继低压化学气相沉积(LPCVD)和等离子体化学气相沉积(PECVD)之后的又一项新的低温成膜工艺。首先介绍了光化学气相沉积的物理基础,然后重点介绍了光化学气相沉积的实验方法,最后简要介绍了光化学气相沉积在薄膜制备中的一些应用。 相似文献
5.
6.
7.
《真空科学与技术学报》1989,(1)
根据中国真空学会薄膜专业委员会一九八九年工作计划的安排,将于一九八九年十月在湖南召开全国第三届化学气相沉积(CVD)学术会议。薄膜专业委员会主持召开的第一届化学气相沉积(CVD)学术会议于一九八五年在上海举行,第二届化学气相沉积 相似文献
8.
无机薄膜在现代科学技术中占有重要地位。CVD法是制备这类薄膜的有效手段之一.它装置简单,操作方便,工艺重现性好,且可在沉积薄膜的过程中随时调节薄膜的组成.过去20年里,在常压CVD得到广泛应用的同时,低压CVD、等离子体增强CVD(包括微波等离子体CVD)、光激发CVD(包括激光激发CVD)相继出现,并被成功地应用于优质薄膜的制备中。可预言,随着实践和理论的不断发展,CVD将更广泛地应用于现代科技领域中. 相似文献
9.
10.
11.
We study thin film growth using a lattice-gas, solid-on-solid model employing the Monte Carlo technique. The model is applied
to chemical vapour deposition (CVD) by including the rate of arrival of the precursor molecules and their dissociation. We
include several types of migration energies including the edge migration energy which allows the diffusive movement of the
monomer along the interface of the growing film, as well as a migration energy which allows for motion transverse to the interface.
Several well-known features of thin film growth are mimicked by this model, including some features of thin copper films growth
by CVD. Other features reproduced are—compact clusters, fractal-like clusters, Frank-van der Merwe layer-by-layer growth and
Volmer-Weber island growth. This method is applicable to film growth both by CVD and by physical vapour deposition (PVD). 相似文献
12.
宽禁带半导体金刚石具有许多独特特性,基于此种材料的紫外光探测器能在高温、强腐蚀和强辐射等恶劣环境下工作,成为近年来紫外探测技术研究的重点课题之一。本文综述了CVD金刚石膜紫外光探测器的研究及应用进展。 相似文献
13.
Morphology control of thin film relies on understanding multiple ongoing processes during deposition and growth. To reveal the shape evolution of graphene domains on copper surfaces in chemical vapor deposition (CVD), a combinative study is performed on the CVD growth of graphene on copper surfaces. To identify the factors that influence the adsorption and diffusion of carbon atoms and further determine the domain shape, simulations based on kinetic Monte Carlo techniques are carried out. The results reveal the dependence of the graphene domain shapes on the crystalline orientation of the underlying copper substrate surfaces. 相似文献
14.
Masahiko Hiratani Toshihide Nabatame Yuichi Matsui Shinichiro Kimura 《Thin solid films》2002,410(1-2):200-204
Platinum thin films grown by chemical vapor deposition (CVD) using a liquid precursor of (methylcyclopentadienyl)trimethylplatinum were characterized in terms of crystallographic nature, morphology, contaminants, and their influence on electrical properties. The lattice constant of these CVD films (3.91–3.92 Å) is smaller than that of bulk platinum. A high oxygen contaminant is observed, irrespective of the oxygen ratio during growth. A film grown at low oxygen content consists of randomly oriented micro-grains and contains a large amount of carbon contaminants. When the film is grown under oxidative conditions, it shows a 111-textured cylindrical morphology with increasing thickness. The electric resistivity is higher than the bulk standard, and it increases with decreasing oxygen ratio during the film growth. These results indicate that the carbon contaminant causes the randomly oriented micro-grains and contributes to the high residual resistivity. 相似文献
15.
Anna Maria Coclite Rachel M. Howden David C. Borrelli Christy D. Petruczok Rong Yang Jose Luis Yagüe Asli Ugur Nan Chen Sunghwan Lee Won Jun Jo Andong Liu Xiaoxue Wang Karen K. Gleason 《Advanced materials (Deerfield Beach, Fla.)》2013,25(38):5392-5423
Well‐adhered, conformal, thin (<100 nm) coatings can easily be obtained by chemical vapor deposition (CVD) for a variety of technological applications. Room temperature modification with functional polymers can be achieved on virtually any substrate: organic, inorganic, rigid, flexible, planar, three‐dimensional, dense, or porous. In CVD polymerization, the monomer(s) are delivered to the surface through the vapor phase and then undergo simultaneous polymerization and thin film formation. By eliminating the need to dissolve macromolecules, CVD enables insoluble polymers to be coated and prevents solvent damage to the substrate. CVD film growth proceeds from the substrate up, allowing for interfacial engineering, real‐time monitoring, and thickness control. Initiated‐CVD shows successful results in terms of rationally designed micro‐ and nanoengineered materials to control molecular interactions at material surfaces. The success of oxidative‐CVD is mainly demonstrated for the deposition of organic conducting and semiconducting polymers. 相似文献
16.
Epitaxial growth of SiC on SOI substrates using a hot-mesh chemical vapor deposition (CVD) technique was investigated. This technique utilizes a catalytic reaction involving hot tungsten wires arranged in a mesh structure. Using this hot-mesh CVD method, SiC epitaxial growth on SOI substrates with a thin top Si layer was realized without formation of voids, which form readily in the thin Si top layer at temperatures above 800 °C. The SiC film grown on an SOI structure exhibited a large gage factor (GF) of − 27, which is approximately the same as that (GF = − 31.8) of a SiC epitaxial film on Si(100) grown at 1360 °C using atmospheric pressure CVD. 相似文献
17.
CVD金刚石膜高效超精密抛光技术 总被引:1,自引:0,他引:1
CVD金刚石膜作为光学透射窗口和新一代计算机芯片的材料,其表面必须得到高质量抛光,但是现存方法难以满足既高效又超精密的加工要求.本文提出机械抛光与化学机械抛光相结合的方法.首先,采用固结金刚石磨料抛光盘和游离金刚石磨料两种机械抛光方法对CVD金刚石膜进行粗加工,然后采用化学机械抛光的方法对CVD金刚石膜进行精加工.结果表明,采用游离磨料抛光时材料去除率远比固结磨料高,表面粗糙度最低达到42.2 nm.化学机械抛光方法在CVD金刚石膜的超精密抛光中表现出较大的优势,CVD金刚石膜的表面粗糙度为4.551 nm. 相似文献
18.
采用化学气相沉积法(CVD),在溅射了镍薄膜的硅基底上制备了定向碳纳米管薄膜。对镍薄膜的氨气预处理过程及其机理进行了研究。结果发现预处理后的岛状区域随着薄膜厚度的增加而增加,纳米粒子区域的变化则与之相反。对5nm的镍薄膜进行预处理能获得细化和均匀分布的纳米粒子,有利于定向碳纳米管的生长。碳纳米管的生长过程及其细微结构与温度有很大关系。碳源的分解、碳原子在催化剂内部的扩散以及催化剂粒子的团聚三者之间的竞争决定了碳纳米管的生长情况。本文分析了碳纳米管的顶部生长模式及该模式下催化剂粒子的形态变化。 相似文献
19.
化学气相沉积制备钼钨合金 总被引:2,自引:0,他引:2
以MoF6、WF6以及H2为原料,用化学气相共沉积的方法,成功地在铜基片表面沉积出钼钨合金.实验分析表明:沉积层结构为单相均匀固溶体.在钼含量高时沉积层显微组织呈细晶层状结构,在钼含量较低时沉积层显微组织呈柱状晶生长.改变反应气体中WF6、MoF6相对含量可实现膜层成分可控.采用化学气相沉积法沉积钼钨等难熔金属合金,沉积纯度高,设备简单,沉积速率快,在高温抗烧蚀涂层及耐腐蚀涂层方面具有广泛的应用前景. 相似文献
20.
Liu Rui Si Jiawei Lv Qipu Xiao Cancheng Di Ziye Zhao Lei Wang Liancheng Zhang Lei 《Journal of Materials Science: Materials in Electronics》2021,32(16):21012-21020
In this work, c-axis-oriented continuous GaN films have been synthesized by the chemical vapor deposition (CVD) method using ZnO material as the intermediate buffer layer. The GaN films with different growth temperatures exhibit high crystal quality and small surface roughness due to the same crystal structure and low lattice mismatches rate between GaN and ZnO materials. Meanwhile, the UV photodetector based on the CVD-grown GaN film exhibits a relatively high responsivity, fast rise and decay time, and good thermal stability. Our work provides a simple and promising CVD method to fabricate continuous GaN film for electronic and optoelectronic devices.
相似文献