染料敏化太阳能电池丝网印刷浆料中有机造孔剂对电池性能的影响

本文采用丝网印刷工艺制备染料敏化太阳能电池的氧化钛多孔薄膜,并将其组装成电池器件.主要研究了丝网印刷浆料中造孔剂-乙基纤维素和松油醇的含量对氧化钛薄膜光电性能的影响.光电性能测试和扫描电镜结果显示,当乙基纤维素N50和N10的比例为1:0、松油醇的含量为75%时,薄膜的结构和光电转换性能结果最优,单层光电转换效率从0.84%提升到1.23%.     

片式氧传感器用氧化铝绝缘浆料的流变性

以松油醇为溶剂、乙基纤维素为粘结剂、三乙醇胺为分散剂、蓖麻油为触变剂,制备了低粘度、高固含量的氧化铝绝缘浆料.分别研究了分散剂、触变剂的添加量对浆料流变性的影响,研究表明:分散剂三乙醇胺在有机溶剂中添加量为5wt％,触变剂蓖麻油在有机溶剂中添加量为3wt.％时,浆料具有良好的流变性.将制备的绝缘浆料丝网印刷在基材上,经1100℃烧结形成的导热绝缘层厚度均匀约为8μm,电阻率为8.0×106Ω·cm.     

EC对醇基粉煤灰涂料性能的影响

实验研究的是当EC的加入量从0.1%到2.0%范围内缓慢增加时,乙基纤维素对醇基粉煤灰铸造涂料的密度、悬浮性、粘结性、高温抗裂性等主要性能的影响。结果表明:随着涂料中EC加入量的增加,涂料的悬浮性提高,条件粘度增加,而涂料的密度减小,涂层高温抗裂性变差。     

紫外光固化化学镀铜活化浆料的制备及性能研究

为了在PI(聚酰亚胺)薄膜上制备一种含银的紫外光(UV)固化化学镀铜活化浆料,采用电化学方法测定了聚酯丙烯酸酯和聚氨酯丙烯酸酯不同质量比得到的活化浆料引发化学镀铜的混合电位–时间曲线,研究了硝酸银和导电炭黑含量对活化浆料的附着力、催化活性及铜镀层导电性的影响,通过扫描电镜(SEM)、X射线能谱仪(EDS)和X射线衍射仪(XRD)对活化浆料和铜镀层的表面形貌、结构以及Ag元素分布等进行了研究。以聚酯丙烯酸酯和聚氨酯丙烯酸酯按质量比为4∶6组成复合预聚体,导电炭黑和Ag NO3的用量分别为10%和7%制备活化浆料,将其涂覆在PI薄膜上,UV固化后化学镀铜10 min,所得镀铜层颗粒细小、致密,与基材的结合力达100%,方阻为0.046?/□。     

左旋松油醇对植物病原菌的抑菌活性研究

在室内测定了左旋松油醇对4种植物病原细菌和14种植物病原真菌的抑菌活性.结果表明,左旋松油醇对供试的植物病原菌均有一定的抑制作用.在参试的植物病原细菌中,3.0 mg·mL-1浓度的左旋松油醇对番茄青枯病菌的抑制作用较强,抑菌圈的直径为13.3 mm.而在参试的植物病原真菌中,左旋松油醇对玉米大斑病菌、水稻纹枯病菌及芥菜黑斑病菌有较好的抑菌效果,EC50分别为0.1053 mg·mL-1、0.1127 mg·mL-1和0.1400mg·mL-1.     

基于石墨烯加热膜片的自动控温运动服

石墨烯是一种有着高强韧性的超薄材料,断裂强度较大,超过钢材的200倍;弹性较好,拉伸幅度超过20%,导电性优异,是智能可穿戴的研究热点[1][2]。本文利用石墨烯粉末掺加高聚物后得到的浆料并通过丝网印刷的方法将浆料印刷在柔性基材上,通过确定浆料中石墨烯含量在7.5%wt和膜片电极间距为1cm,膜层为3层以及供电电压为9～10V时,此时得到的石墨烯膜发热效果最好,发热均匀、稳定,使用寿命长。为了实现温度调节,我们在电源与膜片之间安装了控制器,该控制器可控制单个膜片和多个膜片的工作温度和工作时间。经测试整套系统移植到体育类服装上可在10V电压下连续工作500h及5000次稳定发热(40℃)。     

电加热石墨烯薄膜材料的制备及应用研究进展

介绍了制备低缺陷的电加热石墨烯薄膜材料的几种方法,以及由不同方法得到的石墨烯材料在制备成膜时所采用的不同的成膜技术及其应用,并且分析了不同的方法在大批量制备过程中亟待解决的问题。指出在考虑到低成本大批量制备高性能的电加热石墨烯薄膜材料时,超临界流体剥离法是一种环保无VOC的制备方法,将得到的石墨烯制成浆料可以突破基底的限制而被广泛应用。     

基于微喷技术的氧化石墨烯基层层自组装电极涂层

改变以传统浸涂法为基础的层层自组装成膜,进一步结合规模化、可控性和均匀性超声雾化微喷技术,在柔性聚酰亚胺基底表面成功制备以静电相互作用力为驱动力的氧化石墨烯基层层自组装(GO–NH2/GO–COOH)n电极涂层,进而通过加热还原处理获取(RGO–NH2/RGO–COOH)n,提升电极涂层导电性。结果表明,基于超声雾化微喷技术的层层自组装导电薄膜可被规模化均匀制备,且随着薄膜层数的增加导电性增强。另外,与浸涂法层层自组装成膜相比,在n=20时,还原后的薄膜方阻由(923.3±29.3)kΩ/sq明显降低至(227.7±12.1)kΩ/sq。因此,进一步改善还原条件后,其未来可被潜在应用于一系列柔性电子器件。     

超临界二氧化碳介入的α-松油醇催化合成1，8-桉叶素

提出超临界二氧化碳介入α-松油醇异构合成1,8-桉叶素的方法,并采用二极管阵列检测器测量超临界二氧化碳下α-松油醇/环己烷体系的最大吸收波长研究二氧化碳加入量与极性的关系。考察了溶剂体系极性、溶剂量和二氧化碳压力对磷钨酸/聚离子液体（PW/PIL）催化剂催化α-松油醇异构合成1,8-桉叶素的影响,并探讨了超临界二氧化碳介质中,PW/PIL催化剂催化α-松油醇异构合成1,8-桉叶素可能的反应机理。开发了一种绿色高效的1,8-桉叶素合成工艺,当环己烷/α-松油醇的质量比10∶1,PW/PIL催化剂/α-松油醇的摩尔比0.0163∶1,CO₂压力19.0 MPa,50℃反应8 h时,α-松油醇的转化率为89.3%,1,8-桉叶素的选择性为54.6%。研究表明,超临界二氧化碳起到共溶剂、膨胀溶剂、降低溶剂体系极性的三重作用,从而改善了催化剂的团聚现象,提高了1,8-桉叶素的选择性。     

(Ni,Fe)S_(1+x)薄膜材料的制备及电性能研究

以硫酸亚铁铵((NH_4)_2Fe(SO_4)2·6H_2O)、硫酸镍(NiSO_4·6H_2O)和硫代乙酰胺(C_2H_5NS)为原料,采用化学水浴沉积法制备出(Ni,Fe)S_(1+x)的薄膜。利用XRD、FE-SEM、EDS和半导体测试仪等手段对所得产物进行表征分析。结果表明,当Ni~(2+)的加入量为20%、32%、50%、70%时可以沉积成膜,当加入量为85%和100%时不能沉积成膜;随着Ni~(2+)元素的增加,薄膜(Ni,Fe)S_(1+x)阻值在不断降低,相应阻值由4.65×10~3Ω减小到24.17Ω,表明其导电性能不断增加。     

溶胶-凝胶方法在玻璃表面制备ATO薄膜过程中Na+离子扩散的研究

利用金属醇盐以溶胶-凝胶方法制备了Sb掺杂SnO2(ATO)薄膜,研究了玻璃基板中Na+离子扩散对薄膜性能的影响及其机理,并进行了在玻璃表面预镀SiO2底膜以防止这种扩散的研究工作,发现预镀SiO2底膜后可以有效地阻止Na+离子的扩散从而改善了ATO薄膜的导电性能.     

Interface Contributions to Localized Heating of Dielectric Thin Films

Measurements of the thermal conductivity of thin dielectric films in the last ten years have established that thin film thermal conductivity may be much lower than that of the corresponding bulk solid, by as much as two orders of magnitude, and that significant interfacial thermal resistance may be present along the film/substrate interface. We review such measurements of thin film thermal conductivity and interfacial thermal resistance, and use the heat conduction equation to determine their implications for the localized heating of thermally anisotropic thin films bonded to substrates. It is found that for surface heating an equivalent isotropic film can be established and that the presence of large interfacial thermal resistance leads to a strong dependence of film thermal conductivity on film thickness, especially for thin films. A microscopic model of the film/substrate interface is used to establish the dependence of the interfacial thermal resistance on porosity along the interface.     

Effects of Fabrication Conditions on the Crystallinity,Barium Deficiency,and Conductivity of BaZr0.8Y0.2O3–δ Films Grown by Pulsed Laser Deposition

Yttrium‐doped barium zirconate (BZY) thin films were deposited on MgO and sapphire substrates using a pulsed‐laser deposition (PLD) method with varying deposition rates. The films deposited with a low deposition rate exhibited highly oriented microstructures with little grain boundaries. The electrical conductivities of these films were higher than those of the films, deposited with high deposition rates, which showed little‐oriented polycrystalline microstructure. While the films deposited on the MgO substrates had a stoichiometric composition, those deposited on the sapphire substrates had a high barium deficiency, which was possibly due to the differences in the crystal structure and large lattice mismatch between the sapphire substrate and the BZY film. The electrical conductivity of the highly oriented BZY film, grown on MgO substrate with a low deposition rate, showed little barium deficiency and the highest conductivity value that is higher than the typical conductivity of sintered pellets.     

PVP与PVA对原位聚合导电聚苯胺薄膜的影响

分别以水溶性高分子聚乙烯吡咯烷酮(PVP)和聚乙烯醇(PVA)为稳定剂,采用苯胺的分散聚合体系,在玻璃基片上原位沉积了表面光滑均匀、亚微米厚度的导电聚苯胺薄膜,改善了导电聚苯胺的加工性能。研究了薄膜的形貌、厚度及电导率。结果表明:聚苯胺薄膜表面光滑,黏附一些胶体粒子,以PVP为稳定剂制备的聚苯胺薄膜表观质量好于以PVA为稳定剂得到的聚苯胺薄膜,表面更加光洁致密;不同稳定剂影响聚苯胺薄膜厚度及性能,在其他实验条件相同的情况下,以PVA为稳定剂制备的聚苯胺薄膜厚度及电导率均高于以PVP为稳定剂制备的聚苯胺薄膜厚度和电导率。     

Thick Nb-Doped Bismuth Titanate Film with Controllable Grain Orientation

In the current work, we reported a potential approach to obtain thick ceramic films with controllable grain orientation based on magnetic alignment and polymerization techniques. The slurry containing 40 vol% Bi₄Ti_2.96Nb_0.04O₁₂ (BINT) ceramic powder, monomer, initiator, and catalyst was drop coated on a Pt substrate and then moved into a vertical 10 T magnetic field. In 1–2 min, the ceramic particles were aligned by a strong magnetic force in slurry and then in situ locked by polymerization on the substrate. After sintering at 1000°C, a BINT ceramic film (50–80 μm in thickness) with a highly a / b plane orientation was obtained. Theoretically, the grain orientation in the films can be easily controlled by adjusting the magnetic field direction. This approach is readily applicable to other materials with a non-cubic structure and is expected to facilitate the fast preparation of grain-oriented thick films.     

Assembly and benign step-by-step post-treatment of oppositely charged reduced graphene oxides for transparent conductive thin films with multiple applications

We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on PET showed a significant decrease in electrical conductivity. In addition, the graphene thin film had a smooth surface with tunable wettability.     

制备过程对掺铝氧化锌薄膜性质的影响

文章采用溶胶-凝胶法在玻璃基底上制备得到了高透光率,高导电性的掺铝氧化锌薄膜（AZO）,利用原子力显微镜、扫描电镜、X射多次退火的制备过程不仅可以得到可见光区透光率大于85%,电阻率为7.2×10-5Ω·m的透明导电薄膜,而且因省略了热处理过程而简化了制备工艺,缩短了制膜时间。线衍射仪和紫外可见分光光度计等研究了三种不同的制备过程对AZO性质的影响。结果表明,制备过程的不同导致了薄膜的表面形貌、结构和导电性质方面的差别,其中分层多次退火过程有利于晶粒长大,形成结晶度高且具有单一（002）取向的AZO薄膜,同时改善薄膜的导电性能。分层     

Fabrication and characterization of aluminum nitride thick film coated on aluminum substrate for heat dissipation

For effective heat dissipation in high-power LED applications, aluminum nitride (AlN) thick films as thermally conductive dielectric layers were developed, which were deposited on an Al substrate by aerosol deposition (AD). The aerosol-deposited AlN thick films on Al substrates have advantages over conventional polymer-based dielectric substrates or ceramic substrate mounted heatsink systems including an epoxy adhesive, such as excellent heat dissipation capacity and low thermal resistance. AD is an effective method to fabricate high-quality AlN thick film without the Al₂O₃ phase because the film is formed at room temperature. Highly dense and well-adhered, pure AlN thick films with thicknesses up to 30 µm were deposited on an Al substrate. AlN-Al₂O₃ and AlN-polyvinylidene fluoride (PVDF) composite films were also deposited on an Al substrate in order to investigate the effect of Al₂O₃ and polymer on the microstructure and thermal properties. Among the films, pure AlN thick film exhibited the highest dielectric strength, the highest thermal conductivity, and the lowest thermal resistance. Therefore, it can be expected that the aerosol-deposited AlN thick film on Al substrate could be used as a powerful heatsink.     

Pyrolytic Deposition of Carbon Films Containing Nitrogen and/or Boron

Carbon films containing nitrogen and/or boron were prepared in a closed system by the pyrolysis of appropriate precursor materials. The decomposition products of the pyrolysis were identified and the resulting films were characterized by chemical and physical means. The electrical conductivity of the heteroatom-containing films is similar to that of pure amorphous carbon films. Boron nitride was present in the C-N-B film as revealed by XPS and IR spectroscopy. Oxygen appeared to have a role in the adherence of the films to the silica substrate.     

Evolution and properties of adherent diamond films with ultra high nucleation density deposited onto alumina

In this work, we report on adherent diamond films with thickness of up to 4.5 μm grown on polycrystalline alumina substrates. Prior to deposition, alumina substrates were ultrasonically abraded with mixed poly-disperse slurry that allows high nucleation density of values up to ∼5×10¹⁰ particles/cm². It was estimated that the minimal film thickness achieved for continuous films was ∼320 nm, obtained after a deposition time of 15 min with diamond particles density (DPD) of ∼4×10⁹ particles/cm². Continuous adherent diamond films with high DPD (∼10⁹ particles/cm²) were obtained also on sapphire surface after abrasion with mixed slurry and 15 min of deposition. However, after longer deposition time, diamond films peeled off from the substrates during cooling.The poor adhesion between the diamond and sapphire is attributed to the weak interface interaction between the film and the substrate and to difference in coefficient of thermal expansion. On the other hand, it is suggested that the reason for good adhesion between diamond film and alumina substrate is that high carbon diffusivity onto alumina grain boundaries allows strong touch-points at the grooves of alumina grains, and this prevents the delamination of diamond film. This adhesion mechanism, promoted by sub-micron diamond grain-size, is allowed by initial high nucleation density.The surface properties, phase composition and microstructure of the diamond films deposited onto alumina were examined by electron energy loss spectroscopy (EELS), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and high-resolution scanning electron microscopy (HR-SEM). The residual stress in the diamond films was evaluated by diamond Raman peak position and compared to a theoretical model with good agreement. Due to the sub-micron grain-size, the intrinsic tensile stress is high enough to partially compensate the thermal compressive stress, especially in diamond films with thickness lower than 1 μm.