High-sensitive phototransistor based on vertical HfSe2/MoS2 heterostructure with broad-spectral response

Van der Waals heterostructures based on the two-dimensional (2D) semiconductor materials have attracted increasing attention due to their attractive properties. In this work, we demonstrate a high-sensitive back-gated phototransistor based on the vertical HfSe₂/MoS₂ heterostructure with a broad-spectral response from near-ultraviolet to near-infrared and an efficient gate tunability for photoresponse. Under bias, the phototransistor exhibits high responsivity of up to 1.42×10³ A/W, and ultrahigh specific detectivity of up to 1.39×10¹⁵ cm·Hz^1/2·W^-1. Moreover, it can also operate under zero bias with remarkable responsivity of 10.2 A/W, relatively high specific detectivity of 1.43×10¹⁴ cm·Hz^1/2·W^-1, ultralow dark current of 1.22 fA, and high on/off ratio of above 10⁵. These results should be attributed to the fact that the vertical HfSe₂/MoS₂ heterostructure not only improves the broadband photoresponse of the phototransistor but also greatly enhances its sensitivity. Therefore, the heterostructure provides a promising candidate for next generation high performance phototransistors.     

Growth behaviors and emission properties of Co-deposited MAPbI3 ultrathin films on MoS2

Hybrid organic-inorganic perovskite thin films have attracted much attention in optoelectronic and information fields because of their intriguing properties. Due to quantum confinement effects, ultrathin films in nm scale usually show special properties. Here, we report on the growth of methylammonium lead iodide (MAPbI₃) ultrathin films via co-deposition of PbI₂ and CH₃NH₃I (MAI) on chemical-vapor-deposition-grown monolayer MoS₂ as well as the corresponding photoluminescence (PL) properties at different growing stages. Atomic force microscopy and scanning electron microscopy measurements reveal the MoS₂ tuned growth of MAPbI₃ in a Stranski-Krastanov mode. PL and Kelvin probe force microscopy results confirm that MAPbI₃/MoS₂ heterostructures have a type-II energy level alignment at the interface. Temperaturedependent PL measurements on layered MAPbI₃ (at the initial stage) and on MAPbI₃ crystals in averaged size of 500 nm (at the later stage) show rather different temperature dependence as well as the phase transitions from tetragonal to orthorhombic at 120 and 150 K, respectively. Our findings are useful in fabricating MAPbI₃/transition-metal dichalcogenide based innovative devices for wider optoelectronic applications.     

4英寸热氧化硅衬底上磁性隧道结的微制备

就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究，并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结，其结电阻与面积的积 矢的绝对误差在10% 以内，隧穿磁电阻的绝对误差在7% 以内，样品的磁性隧道结性质具有较好的均匀性和一致性，可以满足研制磁随机存储器存储单元演示器件的基本要求. 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 4英寸热氧化硅衬底     

Effect of defects on the electronic structure of a PbI2/MoS2 van der Waals heterostructure: A first-principles study

PbI2/MoS2,as a typical van der Waals(vdW)heterostructure,has attracted intensive attention owing to its remarkable electronic and optoelectronic properties.In this work,the effect of defects on the electronic structures of a PbI2/MoS2 heterointerface has been systematically investigated.The manner in which the defects modulate the band structure of PbI2/MoS2,including the band gap,band edge,band alignment,and defect energy-level density within the band gap is discussed herein.It is shown that sulfur defects tune the band gaps,iodine defects shift the positions of the band edge and Fermi level,and lead defects realize the conversions between the straddling-gap band alignment and valence-band-aligned gap,thus enhancing the light-absorption ability of the material.     

Precisely controlling the twist angle of epitaxial MoS2/graphene heterostructure by AFM tip manipulation

Two-dimensional (2D) moiré materials have attracted a lot of attention and opened a new research frontier of twistronics due to their novel physical properties. Although great progress has been achieved, the inability to precisely and reproducibly manipulate the twist angle hinders the further development of twistronics. Here, we demonstrated an atomic force microscope (AFM) tip manipulation method to control the interlayer twist angle of epitaxial MoS₂/graphene heterostructure with an ultra-high accuracy better than 0.1°. Furthermore, conductive AFM and spectroscopic characterizations were conducted to show the effects of the twist angle on moiré pattern wavelength, phonons and excitons. Our work provides a technique to precisely control the twist angle of 2D moiré materials, enabling the possibility to establish the phase diagrams of moiré physics with twist angle.     

Femtosecond first-order autocorrelation measurement based one-photon induced photocurrent in Si Schottky diodes

Si Schottky diodes promise to provide cheap, reliable, and linear detectors for use in femtosecond and picosecond pulse width measurement. At low pulse excitation density (<100 pJ/cm²), the pulse width can be deduced from the first-order autocorrelation, and the measured results are in agreement with the theoretical ones. When pulse excitation density is larger than 1 nJ/cm², the pulse trailing edge is distorted due to bandgap reduction in semiconductor Si and the pulse width cannot be measured accurately by means of the first-order autocorrelation. The interference fringes presented in the first-order autocorrelation measurement can provide a way of calibrating the delay, and the pulse width can also be obtained by calculating the number of interference fringes.     

基于异质结界面优化的光子晶体二极管单向传输特性研究

基于光子晶体异质结结构的全光二极管是目前的一个研究热点,使其具有更好的单向传输特性是研究的一个目标.本文中通过改变异质结界面处的光子晶体结构,提出了不同的优化设计方案,在宽频带内实现了高对比度全光二极管的高效率单向传输,并且该结构还具有分束特性.     

Comparative study of electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes

In this paper, the electrical parameters of Au/n-Si (MS) and Au/Si₃N₄/n-Si (MIS) Schottky diodes are obtained from the forward bias current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Experimental results show that the rectifying ratios of MS and MIS diode at ± 5 V are found to be 1.25×10³ and 1.27×10⁴, respectively. The main electrical parameters of MS and MIS diode, such as the zero-bias barrier height (Φ _Bo) and ideality factor (n) are calculated to be 0.51 eV (I-V), 0.53 eV (C-V), and 4.43, and 0.65 eV (I-V), 0.70 eV (C-V), and 3.44, respectively. Also, the energy density distribution profile of the interface states (N_ss) is obtained from the forward bias I-V. In addition, the values of series resistance (R_s) for the two diodes are calculated from Cheung's method and Ohm's law.     

N_2在单原子催化剂Ir/MoS_2表面上吸附的第一性原理研究

利用密度泛函理论,在slab模型下,研究N_2在单原子催化剂Ir_1/MoS_2上的吸附行为,结果表明,N_2的优势吸附位为Ir原子的顶位,构型为垂直向下,吸附能达到1.57 eV,是化学吸附.电子结构说明主要是吸附N原子的2Pz轨道在Z方向上与Ir的5d_z~2、5d_(xz)、5d_(yz)、6P_z混合得以使N_2稳定吸附在Ir原子上.     

MoS2摩擦表面氧化与电子转移

利用电子自旋共振谱（ＥＳＲ）和Ｘ射线光电子谱（ＸＰＳ）研究了ＭｏＳ２摩擦表面的氧化行为和摩擦表面氧化的电子转移,发现Ｍｏ２在摩擦失效过程中Ｍｏ＾４＋与氧作用生成稳定的Ｍｏ＾６＋终态氧化物,其间经过Ｍｏ＾５＋过渡态。深入揭示了ＭｏＳ２摩擦表面氧化过程的复杂性,指出Ｍｏ在摩擦表面氧化过程中以多种化学状态存在,Ｍｏ原子的氧化是Ｍｏ４ｄ轨道上的单电子转移过程。     

Band renormalization and spin polarization of MoS2 in graphene/MoS2 heterostructures

Transition metal dichalcogenides exhibit spin–orbit split bands at the K‐point that become spin polarized for broken crystal inversion symmetry. This enables simultaneous manipulation of valley and spin degrees of freedom. While the inversion symmetry is broken for monolayers, we show here that spin polarization of the MoS₂ surface may also be obtained by interfacing it with graphene, which induces a space charge region in the surface of MoS₂. Polarization induced symmetry breaking in the potential gradient of the space charge is considered to be responsible for the observed spin polarization. In addition to spin polarization we also observe a renormalization of the valence band maximum (VBM) upon interfacing of MoS₂ with graphene. The energy difference between the VBM at the Γ‐point and K‐point shifts by ～150 meV between the clean and graphene covered surface. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

1.54 μm Light emission from Er/O and Er/F doped Si p–i–n diodes grown by molecular beam epitaxy

Various light emitting devices (LED) have been processed using Er/O- and Er/F-doped Si layered structures grown by molecular beam epitaxy (MBE) at low temperature. A comparative study has been carried out in order to provide more understanding of the electroluminescence (EL) excitation and de-excitation mechanisms in particular at a high injection current regime. Comparing the experimental results with model calculations the values of excitation cross section, σ_ex, and effective Auger coefficient, C_A, have been determined for various devices operated at different biases. Time-resolved EL measurements of these Er/O- and Er/F-doped MBE Si structures, using an experimental set-up with a time response of 200 ns, have been performed with different excitation conditions. Besides the spontaneous Er emission (700 μs), some fast EL decay processes associated with the Auger energy transfer via free carriers (4 μs), and the hot carrier effects (200 ns) have been identified.     

二硫化钼/石墨烯异质结的界面结合作用及其对带边电位影响的理论研究

采用基于色散修正的平面波超软赝势方法研究了二硫化钼/石墨烯异质结的界面结合作用及其对电荷分布和带边电位的影响.研究表明二硫化钼与石墨烯之间可以形成范德瓦耳斯力结合的稳定堆叠结构.通过能带结构计算,发现二硫化钼与石墨烯的耦合导致二硫化钼成为n型半导体,石墨烯转变成小带隙的p型体系.并通过电子密度差分图证实了界面内二硫化钼附近聚集负电荷,石墨烯附近聚集正电荷,界面内形成的内建电场可以抑制光生电子-空穴对的复合.石墨烯的引入可以调制二硫化钼的能带,使其导带底上移至-0.31 eV,提高了光生电子还原能力,有利于光催化还原反应.     

Electric and thermo spin transfer torques in Fe/Vacuum/Fe tunnel junction

We present first-principle calculations of electric and thermo spin transfer torques (STT) in Fe/Vacuum(Vac)/Fe magnetic tunnel junctions (MTJs). Our quantitative studies demonstrate rich bias dependence of STT and tunnel magneto resistance (TMR) behaviors with respect to the interface roughness. Thermoelectric effects in Fe/Vac/Fe MTJs is remarkable. We observe larger ZT of 6.2 in 8 ML clean Vacuum barrier, where the heavily restrained thermal conductance should be responsible for. Thermo-STT in Fe/Vac/Fe MTJs show same order as that in Fe/MgO/Fe MTJs with similar barrier thickness.     

Si／SiNx／SiO2多层膜的光致发光

采用射频磁控溅射法,制备了具有强光致可见发光的纳米Si/SiNx/SiO2多层膜,利用傅立叶红外吸收(FTIR)谱,光致发光(PL)谱对其进行了研究。用260nm光激发得到的PL谱中观察到高强度的392nm(3.2eV)和670nm(1.9eV)光致发光峰,分析认为它们分别来自于缺陷态≡Si-到价带顶和从导带底到缺陷态≡Si-的辐射跃迁而产生的光致激发辐射复合发光。PL谱中只有370nm(3.4eV)处发光峰的峰位会受退火温度的影响,结合FTIR谱认为370nm发光与低价氧化物—SiOx(x<2.0)结合体有密不可分的关系。当SiO2层的厚度增大时,发光强度有所增强,800℃退火后出现最强发光,认为具有较大SiO2层厚度的Si/SiNx/SiO2结构多层膜更有利于退火后形成Si—N网络,能够得到更高效的光致发光。用量子限制-发光中心(QCLC)模型解释了可能的发光机制,并建立了发光的能隙态(EGS)模型。     

C1催化剂MoS2/K2CO3/TiO2的制备

根据“盐类及氧化物等在高比表面载体上有自发分散倾向”的原理，制备了一种新型的用于由合成气（H2／CO）合成甲醇的催化剂MoS2/K2CO3/TiO2(DSA),该催化剂具有较好的耐硫性和对甲醇有较高的选择性。     

Rectifying and photovoltaic properties of ZnCo2O4/Si heterostructure grown by pulsed laser deposition

ZnCo2O4/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo2O4/Si heterostructures show a good rectifying behavior at five different temperatures ranging from 50 K to 290 K. The measurements of the photovoltaic response reveals that a photovoltage of 33 mV is generated when the heterostructures are illuminated by a 532 nm laser of 250 mW/cm2and mechanically chopped at 2500 Hz. Both the photocurrent and the photovoltage clearly increase with the increase of the laser intensity at room temperature. However, the heterostructures' photovoltage peak decreases with the increase of the temperature. This work may open new perspectives for ZnCo2O4/Si heterostructure-based devices.     

Hydrogen on hybrid MoS2/graphene nanostructures

Transition metal dichalcogenides are rising candidates for the replacement of Pt catalysts in water splitting. In this theoretical study we focus on the hydrogen evolution reaction part of this process and on how hydrogen (H) interacts with MoS₂ nanostructures, free‐standing or positioned on a graphene substrate. Density functional theory calculations confirm the stability of such nanostructures and our results for H on several configurations, from 2D infinite monolayers to quasi‐1D MoS₂ ribbons and quasi‐0D MoS₂ flakes, are presented. We calculate the adsorption energy of H atoms on various sites of the MoS₂ nanostructures, notably at Mo and S active edges. Comparing free‐standing and MoS₂/graphene hybrid systems we find that the effect of the support on the adsorption of H on MoS₂ nanostructures is quite significant when the substrate induces strain. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)