FDD牌照一年期内发放？

TD—LTE牌照优先发放主要是出于扶持TD—LTE产业链的考虑，但FDDLTE牌照发放如若滞后超过一年，将可能给中国外贸关系、TD—LTE国际化、电信市场竞争均衡等带来诸多不确定因素。     

TD终端和业务有望被纳入政府采购范围

在2008年12月19日召开的“全国工业和信息化工作会议”上，工信部部长李毅中表示，TD发展到了最关键的时刻，政府部门要继续给予强力支持，逐项落实扶持措施。另有来自工信部的消息称，工信部将推动把TD终端和业务纳入政府采购范围，发挥政府部门支持TD发展的示范作用。     

声音

“坚定不移地推进TD发展，加快自主创新步伐，加大政策扶持力度，切实把TD做实．做大，做强。”     

基于TD-SCDMA的第三代移动网络演进方案

TD－SCDMA是中国针对第三代移动通信系统（IMT－2000）提出的国际标准。本文首先分析了中国移动通信的发展现状和对未来进行了预期，并根据TD－SCDMA的特点，介绍了基于GSM的TD－SCDMA的演进方案，然后重点分析这种方案的可行性和优越性。     

TD-SCDMA系统终端中的GMM功能实体研究

0．引言 TD—SCDMA作为中国自有知识产权的3G标准，因其采用的一系列国际领先技术及本身良好的系统性能，在国际上引起了强烈的反响，被ITU采纳并成为第三代移动通信的三个主流标准（TD—SCDMA、WCDMA和CDMA2000）之一。     

鼎桥向HSPA全面进军

获奖理由：2008年，鼎桥借助诺基亚西门子通信和华为两家母公司的技术平台和市场资源，完成了深圳、厦门、沈阳三城市的TD—HSDPA全网升级工作，在实验室率先实现了HSUPA功能，大大促进了中国TD产业的发展。     

三星i688：与奥运一起展现中国3G魅力

今年4月，工业和信息化部副部长奚国华说，TD—SCDMA（以下简称TD）成功的意义已经超越了其本身，它标志着我国自主创新能力的增强。可见，TD手机对于中国的意义，并不局限于技术范畴，也没有局限于移动通信产业的范围。拥有了TD技术之后，中国在国际通信产业格局中，首次拥有了话语权。TD产业链上的企业，将有可能在未来的中国通信产业格局中占有一席之地，支持中国主导的TD产业发展，也同样表达了对中国移动通信产业的信心。     

声音

“要深入贯彻落实科学发展观。全面贯彻落实电信体制改革精神，坚定不移地推动TD加快发展，加快自主创新步伐，加大政策扶持力度。切实把TD做实做大做强。”     

多媒体手机成就芯片市场3G应用掌控未来发展

2006年中国手机芯片市场规模681．6亿元 近几年，中国手机产业逐渐走向成熟，生产厂商数量的增加、政府对产业的扶持和各种产业园区的规划建成、几大配套完善的手机制造中心的形成、全球手机产业向中国内地的转移、TD产业链日益完善及中国3G的商用临近造就了中国手机产业的高速增长。     

张德江：坚定不移支持TD把TD做实做大做强

据悉，中共中央政治局委员、国务院副总理张德江2009年4月16日在考察中国移动北京公司时强调，要深入贯彻落实科学发展观，全面贯彻落实电信体制改革精神，坚定不移地推进TD加快发展，加快自主创新步伐，加大政策扶持力度，切实把TD做实做大做强。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.